TY  - JOUR
AU  - Ristić, Goran S.
AU  - Ilić, Stefan D.
AU  - Duane, Russell
AU  - Anđelković, Marko S.
AU  - Palma, Alberto J.
AU  - Lallena, Antonio M.
AU  - Krstić, Miloš D.
AU  - Stanković, Srboljub J.
AU  - Jakšić, Aleksandar B.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12128
AB  - The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, VT, during irradiation with various positive gate biases showed the increase in VT with gate bias. The threshold voltage shift, ΔVT, during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔVT were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔVT shows the same changes as the threshold voltage component due to fixed states, ΔVft, while there is no change in the threshold voltage component due to switching traps, ΔVst.
T2  - Journal of Radiation Research and Applied Sciences
T1  - Radiation sensitive MOSFETs irradiated with various positive gate biases
VL  - 14
IS  - 1
SP  - 353
EP  - 357
DO  - 10.1080/16878507.2021.1970921
ER  - 

@article{
author = "Ristić, Goran S. and Ilić, Stefan D. and Duane, Russell and Anđelković, Marko S. and Palma, Alberto J. and Lallena, Antonio M. and Krstić, Miloš D. and Stanković, Srboljub J. and Jakšić, Aleksandar B.",
year = "2021",
abstract = "The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, VT, during irradiation with various positive gate biases showed the increase in VT with gate bias. The threshold voltage shift, ΔVT, during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔVT were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔVT shows the same changes as the threshold voltage component due to fixed states, ΔVft, while there is no change in the threshold voltage component due to switching traps, ΔVst.",
journal = "Journal of Radiation Research and Applied Sciences",
title = "Radiation sensitive MOSFETs irradiated with various positive gate biases",
volume = "14",
number = "1",
pages = "353-357",
doi = "10.1080/16878507.2021.1970921"
}

Ristić, G. S., Ilić, S. D., Duane, R., Anđelković, M. S., Palma, A. J., Lallena, A. M., Krstić, M. D., Stanković, S. J.,& Jakšić, A. B.. (2021). Radiation sensitive MOSFETs irradiated with various positive gate biases. in Journal of Radiation Research and Applied Sciences, 14(1), 353-357.
https://doi.org/10.1080/16878507.2021.1970921

Ristić GS, Ilić SD, Duane R, Anđelković MS, Palma AJ, Lallena AM, Krstić MD, Stanković SJ, Jakšić AB. Radiation sensitive MOSFETs irradiated with various positive gate biases. in Journal of Radiation Research and Applied Sciences. 2021;14(1):353-357.
doi:10.1080/16878507.2021.1970921 .

Ristić, Goran S., Ilić, Stefan D., Duane, Russell, Anđelković, Marko S., Palma, Alberto J., Lallena, Antonio M., Krstić, Miloš D., Stanković, Srboljub J., Jakšić, Aleksandar B., "Radiation sensitive MOSFETs irradiated with various positive gate biases" in Journal of Radiation Research and Applied Sciences, 14, no. 1 (2021):353-357,
https://doi.org/10.1080/16878507.2021.1970921 . .

TY  - CONF
AU  - Ilić, Stefan
AU  - Anđelković, Marko S.
AU  - Carvajal, Miguel A.
AU  - Lallena, Antonio M.
AU  - Krstić, Miloš
AU  - Stanković, Srboljub
AU  - Ristić, Goran S.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10020
AB  - In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.
C3  - MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings
T1  - Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors
SP  - 337
EP  - 340
DO  - 10.1109/MIEL52794.2021.9569076
ER  - 

@conference{
author = "Ilić, Stefan and Anđelković, Marko S. and Carvajal, Miguel A. and Lallena, Antonio M. and Krstić, Miloš and Stanković, Srboljub and Ristić, Goran S.",
year = "2021",
abstract = "In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.",
journal = "MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings",
title = "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors",
pages = "337-340",
doi = "10.1109/MIEL52794.2021.9569076"
}

Ilić, S., Anđelković, M. S., Carvajal, M. A., Lallena, A. M., Krstić, M., Stanković, S.,& Ristić, G. S.. (2021). Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings, 337-340.
https://doi.org/10.1109/MIEL52794.2021.9569076

Ilić S, Anđelković MS, Carvajal MA, Lallena AM, Krstić M, Stanković S, Ristić GS. Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings. 2021;:337-340.
doi:10.1109/MIEL52794.2021.9569076 .

Ilić, Stefan, Anđelković, Marko S., Carvajal, Miguel A., Lallena, Antonio M., Krstić, Miloš, Stanković, Srboljub, Ristić, Goran S., "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors" in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings (2021):337-340,
https://doi.org/10.1109/MIEL52794.2021.9569076 . .