TY  - JOUR
AU  - Rmuš, Jelena
AU  - Belec, Blaž
AU  - Milanović, Igor
AU  - Fanetti, Mattia
AU  - Gardonio, Sandra
AU  - Valant, Matjaž
AU  - Kurko, Sandra
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11096
AB  - To produce materials with enhanced catalytic activity toward hydrogen evolution reaction we combined MoS2 as transition metal dichalcogenide and Bi2Se3 as topological insulator. The composites were produced by three methods: mechanical milling, high power sonication and spin-coating. MoS2 and Bi2Se3 as precursors in composites preparation were synthesized by hydrothermal method. The structure and morphology of various composites were correlated with their electrochemical properties obtained by impedance spectroscopy, linear sweep and cyclic voltammetry. Mechanical milling provided composites with the most pronounced activity improvement as a result of the largest damage and amount of introduced defects into the materials structure. The potential required to achieve the current density of 10 mA/cm2 in these samples is lowered up to 50 mV compared to as-synthesized material. Bi2Se3 in composite materials promotes the electron transfer to MoS2 which leads to the decrease of charge transfer resistance by 25 Ω.
T2  - Journal of Energy Storage
T1  - Composites of transition metal dichalcogenides and topological insulators as catalytic materials for HER
VL  - 68
SP  - 107719
DO  - 10.1016/j.est.2023.107719
ER  - 

@article{
author = "Rmuš, Jelena and Belec, Blaž and Milanović, Igor and Fanetti, Mattia and Gardonio, Sandra and Valant, Matjaž and Kurko, Sandra",
year = "2023",
abstract = "To produce materials with enhanced catalytic activity toward hydrogen evolution reaction we combined MoS2 as transition metal dichalcogenide and Bi2Se3 as topological insulator. The composites were produced by three methods: mechanical milling, high power sonication and spin-coating. MoS2 and Bi2Se3 as precursors in composites preparation were synthesized by hydrothermal method. The structure and morphology of various composites were correlated with their electrochemical properties obtained by impedance spectroscopy, linear sweep and cyclic voltammetry. Mechanical milling provided composites with the most pronounced activity improvement as a result of the largest damage and amount of introduced defects into the materials structure. The potential required to achieve the current density of 10 mA/cm2 in these samples is lowered up to 50 mV compared to as-synthesized material. Bi2Se3 in composite materials promotes the electron transfer to MoS2 which leads to the decrease of charge transfer resistance by 25 Ω.",
journal = "Journal of Energy Storage",
title = "Composites of transition metal dichalcogenides and topological insulators as catalytic materials for HER",
volume = "68",
pages = "107719",
doi = "10.1016/j.est.2023.107719"
}

Rmuš, J., Belec, B., Milanović, I., Fanetti, M., Gardonio, S., Valant, M.,& Kurko, S.. (2023). Composites of transition metal dichalcogenides and topological insulators as catalytic materials for HER. in Journal of Energy Storage, 68, 107719.
https://doi.org/10.1016/j.est.2023.107719

Rmuš J, Belec B, Milanović I, Fanetti M, Gardonio S, Valant M, Kurko S. Composites of transition metal dichalcogenides and topological insulators as catalytic materials for HER. in Journal of Energy Storage. 2023;68:107719.
doi:10.1016/j.est.2023.107719 .

Rmuš, Jelena, Belec, Blaž, Milanović, Igor, Fanetti, Mattia, Gardonio, Sandra, Valant, Matjaž, Kurko, Sandra, "Composites of transition metal dichalcogenides and topological insulators as catalytic materials for HER" in Journal of Energy Storage, 68 (2023):107719,
https://doi.org/10.1016/j.est.2023.107719 . .

TY  - JOUR
AU  - Balog, Richard
AU  - Jorgensen, Bjarke
AU  - Nilsson, Louis
AU  - Andersen, Mie
AU  - Rienks, Emile
AU  - Bianchi, Marco
AU  - Fanetti, Mattia
AU  - Laegsgaard, Erik
AU  - Baraldi, Alessandro
AU  - Lizzit, Silvano
AU  - Šljivančanin, Željko
AU  - Besenbacher, Flemming
AU  - Hammer, Bjork
AU  - Pedersen, Thomas G.
AU  - Hofmann, Philip
AU  - Hornekaer, Liv
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3937
AB  - Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices(1). The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication(2,3). However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice(4-6), but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene grown on an Ir(111) substrate.
T2  - Nature Materials
T1  - Bandgap opening in graphene induced by patterned hydrogen adsorption
VL  - 9
IS  - 4
SP  - 315
EP  - 319
DO  - 10.1038/NMAT2710
ER  - 

@article{
author = "Balog, Richard and Jorgensen, Bjarke and Nilsson, Louis and Andersen, Mie and Rienks, Emile and Bianchi, Marco and Fanetti, Mattia and Laegsgaard, Erik and Baraldi, Alessandro and Lizzit, Silvano and Šljivančanin, Željko and Besenbacher, Flemming and Hammer, Bjork and Pedersen, Thomas G. and Hofmann, Philip and Hornekaer, Liv",
year = "2010",
abstract = "Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices(1). The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication(2,3). However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice(4-6), but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene grown on an Ir(111) substrate.",
journal = "Nature Materials",
title = "Bandgap opening in graphene induced by patterned hydrogen adsorption",
volume = "9",
number = "4",
pages = "315-319",
doi = "10.1038/NMAT2710"
}

Balog, R., Jorgensen, B., Nilsson, L., Andersen, M., Rienks, E., Bianchi, M., Fanetti, M., Laegsgaard, E., Baraldi, A., Lizzit, S., Šljivančanin, Ž., Besenbacher, F., Hammer, B., Pedersen, T. G., Hofmann, P.,& Hornekaer, L.. (2010). Bandgap opening in graphene induced by patterned hydrogen adsorption. in Nature Materials, 9(4), 315-319.
https://doi.org/10.1038/NMAT2710

Balog R, Jorgensen B, Nilsson L, Andersen M, Rienks E, Bianchi M, Fanetti M, Laegsgaard E, Baraldi A, Lizzit S, Šljivančanin Ž, Besenbacher F, Hammer B, Pedersen TG, Hofmann P, Hornekaer L. Bandgap opening in graphene induced by patterned hydrogen adsorption. in Nature Materials. 2010;9(4):315-319.
doi:10.1038/NMAT2710 .

Balog, Richard, Jorgensen, Bjarke, Nilsson, Louis, Andersen, Mie, Rienks, Emile, Bianchi, Marco, Fanetti, Mattia, Laegsgaard, Erik, Baraldi, Alessandro, Lizzit, Silvano, Šljivančanin, Željko, Besenbacher, Flemming, Hammer, Bjork, Pedersen, Thomas G., Hofmann, Philip, Hornekaer, Liv, "Bandgap opening in graphene induced by patterned hydrogen adsorption" in Nature Materials, 9, no. 4 (2010):315-319,
https://doi.org/10.1038/NMAT2710 . .