TY  - JOUR
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Davidović, Vojkan
AU  - Golubović, Snežana
AU  - Djorić-Veljković, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dencho
AU  - Stanković, Srboljub
AU  - Andjelković, Marko
AU  - Prijić, Zoran
AU  - Manić, Ivica
AU  - Prijić, Aneta
AU  - Ristić, Goran
AU  - Danković, Danijel
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12130
AB  - n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress
T2  - Journal of Circuits, Systems and Computers
T1  - Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress
VL  - 31
IS  - 18
SP  - 2240003
DO  - 10.1142/S0218126622400035
ER  - 

@article{
author = "Veljković, Sandra and Mitrović, Nikola and Davidović, Vojkan and Golubović, Snežana and Djorić-Veljković, Snežana and Paskaleva, Albena and Spassov, Dencho and Stanković, Srboljub and Andjelković, Marko and Prijić, Zoran and Manić, Ivica and Prijić, Aneta and Ristić, Goran and Danković, Danijel",
year = "2022",
abstract = "n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress",
journal = "Journal of Circuits, Systems and Computers",
title = "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress",
volume = "31",
number = "18",
pages = "2240003",
doi = "10.1142/S0218126622400035"
}

Veljković, S., Mitrović, N., Davidović, V., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stanković, S., Andjelković, M., Prijić, Z., Manić, I., Prijić, A., Ristić, G.,& Danković, D.. (2022). Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers, 31(18), 2240003.
https://doi.org/10.1142/S0218126622400035

Veljković S, Mitrović N, Davidović V, Golubović S, Djorić-Veljković S, Paskaleva A, Spassov D, Stanković S, Andjelković M, Prijić Z, Manić I, Prijić A, Ristić G, Danković D. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers. 2022;31(18):2240003.
doi:10.1142/S0218126622400035 .

Veljković, Sandra, Mitrović, Nikola, Davidović, Vojkan, Golubović, Snežana, Djorić-Veljković, Snežana, Paskaleva, Albena, Spassov, Dencho, Stanković, Srboljub, Andjelković, Marko, Prijić, Zoran, Manić, Ivica, Prijić, Aneta, Ristić, Goran, Danković, Danijel, "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress" in Journal of Circuits, Systems and Computers, 31, no. 18 (2022):2240003,
https://doi.org/10.1142/S0218126622400035 . .

TY  - JOUR
AU  - Spassov, Dencho
AU  - Paskaleva, Albena
AU  - Guziewicz, Elżbieta
AU  - Davidović, Vojkan
AU  - Stanković, Srboljub
AU  - Đorić-Veljković, Snežana
AU  - Ivanov, Tzvetan
AU  - Stanchev, Todor
AU  - Stojadinović, Ninoslav
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9089
AB  - High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.
T2  - Materials
T1  - Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics
VL  - 14
IS  - 4
SP  - 849
DO  - 10.3390/ma14040849
ER  - 

@article{
author = "Spassov, Dencho and Paskaleva, Albena and Guziewicz, Elżbieta and Davidović, Vojkan and Stanković, Srboljub and Đorić-Veljković, Snežana and Ivanov, Tzvetan and Stanchev, Todor and Stojadinović, Ninoslav",
year = "2021",
abstract = "High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.",
journal = "Materials",
title = "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics",
volume = "14",
number = "4",
pages = "849",
doi = "10.3390/ma14040849"
}

Spassov, D., Paskaleva, A., Guziewicz, E., Davidović, V., Stanković, S., Đorić-Veljković, S., Ivanov, T., Stanchev, T.,& Stojadinović, N.. (2021). Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials, 14(4), 849.
https://doi.org/10.3390/ma14040849

Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković S, Đorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N. Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials. 2021;14(4):849.
doi:10.3390/ma14040849 .

Spassov, Dencho, Paskaleva, Albena, Guziewicz, Elżbieta, Davidović, Vojkan, Stanković, Srboljub, Đorić-Veljković, Snežana, Ivanov, Tzvetan, Stanchev, Todor, Stojadinović, Ninoslav, "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics" in Materials, 14, no. 4 (2021):849,
https://doi.org/10.3390/ma14040849 . .