TY  - JOUR
AU  - Jelenkovic, Emil V.
AU  - Kovcevic, Milojko
AU  - Jha, S.
AU  - Tong, K. Y.
AU  - Nikezić, Dragoslav
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5323
AB  - Metal oxide semiconductor (MOS) capacitors were fabricated with nitrided and non-nitrided sputtered oxides. The MOS structures were exposed to 2 Mrad gamma-ray dose and stored in a dry ambient for one year. Post-irradiation stability of MOS capacitors was investigated by applying Fowler-Nordheim constant current stress and monitoring the positive charge, border traps and interface states generation. It was found that nitridation increased the resistance of sputtered oxides to various defects generation under irradiation, electrical and combined radiation-electrical stress. The improved stability is explained in part by compensation of oxygen vacancy defects and Pb centers by nitrogen. (C) 2012 Elsevier B.V. All rights reserved.
T2  - Microelectronic Engineering
T1  - Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress
VL  - 104
SP  - 90
EP  - 94
DO  - 10.1016/j.mee.2012.10.016
ER  - 

@article{
author = "Jelenkovic, Emil V. and Kovcevic, Milojko and Jha, S. and Tong, K. Y. and Nikezić, Dragoslav",
year = "2013",
abstract = "Metal oxide semiconductor (MOS) capacitors were fabricated with nitrided and non-nitrided sputtered oxides. The MOS structures were exposed to 2 Mrad gamma-ray dose and stored in a dry ambient for one year. Post-irradiation stability of MOS capacitors was investigated by applying Fowler-Nordheim constant current stress and monitoring the positive charge, border traps and interface states generation. It was found that nitridation increased the resistance of sputtered oxides to various defects generation under irradiation, electrical and combined radiation-electrical stress. The improved stability is explained in part by compensation of oxygen vacancy defects and Pb centers by nitrogen. (C) 2012 Elsevier B.V. All rights reserved.",
journal = "Microelectronic Engineering",
title = "Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress",
volume = "104",
pages = "90-94",
doi = "10.1016/j.mee.2012.10.016"
}

Jelenkovic, E. V., Kovcevic, M., Jha, S., Tong, K. Y.,& Nikezić, D.. (2013). Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress. in Microelectronic Engineering, 104, 90-94.
https://doi.org/10.1016/j.mee.2012.10.016

Jelenkovic EV, Kovcevic M, Jha S, Tong KY, Nikezić D. Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress. in Microelectronic Engineering. 2013;104:90-94.
doi:10.1016/j.mee.2012.10.016 .

Jelenkovic, Emil V., Kovcevic, Milojko, Jha, S., Tong, K. Y., Nikezić, Dragoslav, "Defect generation in non-nitrided and nitrided sputtered gate oxides under post-irradiation Fowler-Nordheim constant current stress" in Microelectronic Engineering, 104 (2013):90-94,
https://doi.org/10.1016/j.mee.2012.10.016 . .

TY  - JOUR
AU  - Jelenkovic, Emil V.
AU  - Kovačević, Milan S.
AU  - Stupar, Dragan Z.
AU  - Bajic, Jovan S.
AU  - Slankamenac, Miloš P.
AU  - Kovačević, Milojko
AU  - To, Suet
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5695
AB  - N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.
T2  - Measurement Science and Technology
T1  - N-channel polysilicon thin film transistors as gamma-ray detectors
VL  - 24
IS  - 10
DO  - 10.1088/0957-0233/24/10/105103
ER  - 

@article{
author = "Jelenkovic, Emil V. and Kovačević, Milan S. and Stupar, Dragan Z. and Bajic, Jovan S. and Slankamenac, Miloš P. and Kovačević, Milojko and To, Suet",
year = "2013",
abstract = "N-type thin film transistors (TFTs) fabricated with fluorinated and hydrogenated polysilicon were exposed to gamma radiation to a cumulative dose up to 1200 Gy(Si). During irradiation, the gate electrode was biased with a positive voltage up to 4.8 V. The effect of irradiation on the electrical characteristics of the devices was monitored after the irradiation steps and in a prolonged period after irradiation. The main monitoring parameter was the threshold voltage which was found to have linear dependence on irradiation dose. This, together with obtained low fading, suggests that thin transistors have potential as radiation dosimeters.",
journal = "Measurement Science and Technology",
title = "N-channel polysilicon thin film transistors as gamma-ray detectors",
volume = "24",
number = "10",
doi = "10.1088/0957-0233/24/10/105103"
}

Jelenkovic, E. V., Kovačević, M. S., Stupar, D. Z., Bajic, J. S., Slankamenac, M. P., Kovačević, M.,& To, S.. (2013). N-channel polysilicon thin film transistors as gamma-ray detectors. in Measurement Science and Technology, 24(10).
https://doi.org/10.1088/0957-0233/24/10/105103

Jelenkovic EV, Kovačević MS, Stupar DZ, Bajic JS, Slankamenac MP, Kovačević M, To S. N-channel polysilicon thin film transistors as gamma-ray detectors. in Measurement Science and Technology. 2013;24(10).
doi:10.1088/0957-0233/24/10/105103 .

Jelenkovic, Emil V., Kovačević, Milan S., Stupar, Dragan Z., Bajic, Jovan S., Slankamenac, Miloš P., Kovačević, Milojko, To, Suet, "N-channel polysilicon thin film transistors as gamma-ray detectors" in Measurement Science and Technology, 24, no. 10 (2013),
https://doi.org/10.1088/0957-0233/24/10/105103 . .