TY  - JOUR
AU  - Simic, Biljana
AU  - Nikolic, Dejan
AU  - Stanković, Koviljka
AU  - Timotijevic, Ljubinko
AU  - Stanković, Srboljub
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5542
AB  - This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7 x 10(6) n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.
T2  - International Journal of Photoenergy
T1  - Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
DO  - 10.1155/2013/582819
ER  - 

@article{
author = "Simic, Biljana and Nikolic, Dejan and Stanković, Koviljka and Timotijevic, Ljubinko and Stanković, Srboljub",
year = "2013",
abstract = "This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7 x 10(6) n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.",
journal = "International Journal of Photoenergy",
title = "Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors",
doi = "10.1155/2013/582819"
}

Simic, B., Nikolic, D., Stanković, K., Timotijevic, L.,& Stanković, S.. (2013). Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors. in International Journal of Photoenergy.
https://doi.org/10.1155/2013/582819

Simic B, Nikolic D, Stanković K, Timotijevic L, Stanković S. Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors. in International Journal of Photoenergy. 2013;.
doi:10.1155/2013/582819 .

Simic, Biljana, Nikolic, Dejan, Stanković, Koviljka, Timotijevic, Ljubinko, Stanković, Srboljub, "Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors" in International Journal of Photoenergy (2013),
https://doi.org/10.1155/2013/582819 . .

TY  - JOUR
AU  - Timotijevic, Ljubinko
AU  - Fetahovic, Irfan
AU  - Lazarević, Đorđe R.
AU  - Vujisić, Miloš Lj.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5659
AB  - Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. Materials considered include silicon dioxide, silicon nitride, aluminium nitride, alumina, and polycarbonate (Lexan). The passage of proton beams through ultrathin layers of these materials has been modeled by Monte Carlo simulations of particle transport. Parameters that have been varied in simulations include proton energy and insulating layer thickness. Materials are compared according to both ionizing and nonionizing effects produced by the passage of protons.
T2  - International Journal of Photoenergy
T1  - Simulation of Proton Beam Effects in Thin Insulating Films
SP  - 128410
DO  - 10.1155/2013/128410
ER  - 

@article{
author = "Timotijevic, Ljubinko and Fetahovic, Irfan and Lazarević, Đorđe R. and Vujisić, Miloš Lj.",
year = "2013",
abstract = "Effects of exposing several insulators, commonly used for various purposes in integrated circuits, to beams of protons have been investigated. Materials considered include silicon dioxide, silicon nitride, aluminium nitride, alumina, and polycarbonate (Lexan). The passage of proton beams through ultrathin layers of these materials has been modeled by Monte Carlo simulations of particle transport. Parameters that have been varied in simulations include proton energy and insulating layer thickness. Materials are compared according to both ionizing and nonionizing effects produced by the passage of protons.",
journal = "International Journal of Photoenergy",
title = "Simulation of Proton Beam Effects in Thin Insulating Films",
pages = "128410",
doi = "10.1155/2013/128410"
}

Timotijevic, L., Fetahovic, I., Lazarević, Đ. R.,& Vujisić, M. Lj.. (2013). Simulation of Proton Beam Effects in Thin Insulating Films. in International Journal of Photoenergy, 128410.
https://doi.org/10.1155/2013/128410

Timotijevic L, Fetahovic I, Lazarević ĐR, Vujisić ML. Simulation of Proton Beam Effects in Thin Insulating Films. in International Journal of Photoenergy. 2013;:128410.
doi:10.1155/2013/128410 .

Timotijevic, Ljubinko, Fetahovic, Irfan, Lazarević, Đorđe R., Vujisić, Miloš Lj., "Simulation of Proton Beam Effects in Thin Insulating Films" in International Journal of Photoenergy (2013):128410,
https://doi.org/10.1155/2013/128410 . .