TY  - JOUR
AU  - Jovanović, Zoran M.
AU  - Trstenjak, Urška
AU  - Ho, Hsin-Chia
AU  - Butsyk, Olena
AU  - Chen, Binbin
AU  - Tchernychova, Elena
AU  - Borodavka, Fedir
AU  - Koster, Gertjan
AU  - Hlinka, Jiří
AU  - Spreitzer, Matjaž
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10623
AB  - The application of two-dimensional (2D) materials
has alleviated a number of challenges of traditional epitaxy and
pushed forward the integration of dissimilar materials. Besides
acting as a seed layer for van der Waals epitaxy, the 2D materials�
being atom(s) thick�have also enabled wetting transparency in
which the potential field of the substrate, although partially
screened, is still capable of imposing epitaxial overgrowth. One of
the crucial steps in this technology is the preservation of the quality
of 2D materials during and after their transfer to a substrate of
interest. In the present study, we show that by honing the
achievements of traditional epitaxy and wet chemistry a hybrid
approach can be devised that offers a unique perspective for the
integration of functional oxides with a silicon platform. It is based
on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus
simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown
on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this
approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.
T2  - ACS Applied Materials and Interfaces
T1  - Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface
VL  - 15
SP  - 6058
EP  - 6068
DO  - 10.1021/acsami.2c17351
ER  - 

@article{
author = "Jovanović, Zoran M. and Trstenjak, Urška and Ho, Hsin-Chia and Butsyk, Olena and Chen, Binbin and Tchernychova, Elena and Borodavka, Fedir and Koster, Gertjan and Hlinka, Jiří and Spreitzer, Matjaž",
year = "2023",
abstract = "The application of two-dimensional (2D) materials
has alleviated a number of challenges of traditional epitaxy and
pushed forward the integration of dissimilar materials. Besides
acting as a seed layer for van der Waals epitaxy, the 2D materials�
being atom(s) thick�have also enabled wetting transparency in
which the potential field of the substrate, although partially
screened, is still capable of imposing epitaxial overgrowth. One of
the crucial steps in this technology is the preservation of the quality
of 2D materials during and after their transfer to a substrate of
interest. In the present study, we show that by honing the
achievements of traditional epitaxy and wet chemistry a hybrid
approach can be devised that offers a unique perspective for the
integration of functional oxides with a silicon platform. It is based
on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus
simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown
on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this
approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.",
journal = "ACS Applied Materials and Interfaces",
title = "Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface",
volume = "15",
pages = "6058-6068",
doi = "10.1021/acsami.2c17351"
}

Jovanović, Z. M., Trstenjak, U., Ho, H., Butsyk, O., Chen, B., Tchernychova, E., Borodavka, F., Koster, G., Hlinka, J.,& Spreitzer, M.. (2023). Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface. in ACS Applied Materials and Interfaces, 15, 6058-6068.
https://doi.org/10.1021/acsami.2c17351

Jovanović ZM, Trstenjak U, Ho H, Butsyk O, Chen B, Tchernychova E, Borodavka F, Koster G, Hlinka J, Spreitzer M. Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface. in ACS Applied Materials and Interfaces. 2023;15:6058-6068.
doi:10.1021/acsami.2c17351 .

Jovanović, Zoran M., Trstenjak, Urška, Ho, Hsin-Chia, Butsyk, Olena, Chen, Binbin, Tchernychova, Elena, Borodavka, Fedir, Koster, Gertjan, Hlinka, Jiří, Spreitzer, Matjaž, "Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface" in ACS Applied Materials and Interfaces, 15 (2023):6058-6068,
https://doi.org/10.1021/acsami.2c17351 . .

TY  - JOUR
AU  - Chen, Binbin
AU  - Gauquelin, Nicolas
AU  - Jannis, Daen
AU  - Cunha, Daniel M.
AU  - Halisdemir, Ufuk
AU  - Piamonteze, Cinthia
AU  - Lee, Jin Hong
AU  - Belhadi, Jamal
AU  - Eltes, Felix
AU  - Abel, Stefan
AU  - Jovanović, Zoran
AU  - Spreitzer, Matjaž
AU  - Fompeyrine, Jean
AU  - Verbeeck, Johan
AU  - Bibes, Manuel
AU  - Huijben, Mark
AU  - Rijnders, Guus
AU  - Koster, Gertjan
PY  - 2020
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9759
AB  - Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH
T2  - Advanced Materials
T1  - Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon
DO  - 10.1002/adma.202004995
ER  - 

@article{
author = "Chen, Binbin and Gauquelin, Nicolas and Jannis, Daen and Cunha, Daniel M. and Halisdemir, Ufuk and Piamonteze, Cinthia and Lee, Jin Hong and Belhadi, Jamal and Eltes, Felix and Abel, Stefan and Jovanović, Zoran and Spreitzer, Matjaž and Fompeyrine, Jean and Verbeeck, Johan and Bibes, Manuel and Huijben, Mark and Rijnders, Guus and Koster, Gertjan",
year = "2020",
abstract = "Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH",
journal = "Advanced Materials",
title = "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon",
doi = "10.1002/adma.202004995"
}

Chen, B., Gauquelin, N., Jannis, D., Cunha, D. M., Halisdemir, U., Piamonteze, C., Lee, J. H., Belhadi, J., Eltes, F., Abel, S., Jovanović, Z., Spreitzer, M., Fompeyrine, J., Verbeeck, J., Bibes, M., Huijben, M., Rijnders, G.,& Koster, G.. (2020). Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials.
https://doi.org/10.1002/adma.202004995

Chen B, Gauquelin N, Jannis D, Cunha DM, Halisdemir U, Piamonteze C, Lee JH, Belhadi J, Eltes F, Abel S, Jovanović Z, Spreitzer M, Fompeyrine J, Verbeeck J, Bibes M, Huijben M, Rijnders G, Koster G. Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials. 2020;.
doi:10.1002/adma.202004995 .

Chen, Binbin, Gauquelin, Nicolas, Jannis, Daen, Cunha, Daniel M., Halisdemir, Ufuk, Piamonteze, Cinthia, Lee, Jin Hong, Belhadi, Jamal, Eltes, Felix, Abel, Stefan, Jovanović, Zoran, Spreitzer, Matjaž, Fompeyrine, Jean, Verbeeck, Johan, Bibes, Manuel, Huijben, Mark, Rijnders, Guus, Koster, Gertjan, "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon" in Advanced Materials (2020),
https://doi.org/10.1002/adma.202004995 . .