TY  - JOUR
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić Luketić, Kristina
AU  - Petrović, Srđan M.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9858
AB  - The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.
T2  - Journal of Nuclear Materials
T1  - The quantitative 6H-SiC crystal damage depth profiling
VL  - 555
SP  - 153143
DO  - 10.1016/j.jnucmat.2021.153143
ER  - 

@article{
author = "Gloginjić, Marko and Erich, Marko and Kokkoris, Michael and Liarokapis, Efthymios and Fazinić, Stjepko and Karlušić, Marko and Tomić Luketić, Kristina and Petrović, Srđan M.",
year = "2021",
abstract = "The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.",
journal = "Journal of Nuclear Materials",
title = "The quantitative 6H-SiC crystal damage depth profiling",
volume = "555",
pages = "153143",
doi = "10.1016/j.jnucmat.2021.153143"
}

Gloginjić, M., Erich, M., Kokkoris, M., Liarokapis, E., Fazinić, S., Karlušić, M., Tomić Luketić, K.,& Petrović, S. M.. (2021). The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials, 555, 153143.
https://doi.org/10.1016/j.jnucmat.2021.153143

Gloginjić M, Erich M, Kokkoris M, Liarokapis E, Fazinić S, Karlušić M, Tomić Luketić K, Petrović SM. The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials. 2021;555:153143.
doi:10.1016/j.jnucmat.2021.153143 .

Gloginjić, Marko, Erich, Marko, Kokkoris, Michael, Liarokapis, Efthymios, Fazinić, Stjepko, Karlušić, Marko, Tomić Luketić, Kristina, Petrović, Srđan M., "The quantitative 6H-SiC crystal damage depth profiling" in Journal of Nuclear Materials, 555 (2021):153143,
https://doi.org/10.1016/j.jnucmat.2021.153143 . .

TY  - JOUR
AU  - Kopsalis, Ioannis
AU  - Paneta, Valentina
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Fazinić, Stjepko
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/158
AB  - The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.
T2  - Journal of Raman Spectroscopy
T1  - Probing high-energy ion-implanted silicon by micro-Raman spectroscopy
VL  - 45
IS  - 8
SP  - 650
EP  - 656
DO  - 10.1002/jrs.4507
ER  - 

@article{
author = "Kopsalis, Ioannis and Paneta, Valentina and Kokkoris, Michael and Liarokapis, Efthymios and Erich, Marko and Petrović, Srđan M. and Fazinić, Stjepko and Tadić, Tonči",
year = "2014",
abstract = "The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.",
journal = "Journal of Raman Spectroscopy",
title = "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy",
volume = "45",
number = "8",
pages = "650-656",
doi = "10.1002/jrs.4507"
}

Kopsalis, I., Paneta, V., Kokkoris, M., Liarokapis, E., Erich, M., Petrović, S. M., Fazinić, S.,& Tadić, T.. (2014). Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy, 45(8), 650-656.
https://doi.org/10.1002/jrs.4507

Kopsalis I, Paneta V, Kokkoris M, Liarokapis E, Erich M, Petrović SM, Fazinić S, Tadić T. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy. 2014;45(8):650-656.
doi:10.1002/jrs.4507 .

Kopsalis, Ioannis, Paneta, Valentina, Kokkoris, Michael, Liarokapis, Efthymios, Erich, Marko, Petrović, Srđan M., Fazinić, Stjepko, Tadić, Tonči, "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy" in Journal of Raman Spectroscopy, 45, no. 8 (2014):650-656,
https://doi.org/10.1002/jrs.4507 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Antonakos, Anastasios
AU  - Telečki, Igor N.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5393
AB  - In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.
T2  - Journal of Raman Spectroscopy
T1  - Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation
VL  - 44
IS  - 3
SP  - 496
EP  - 500
DO  - 10.1002/jrs.4211
ER  - 

@article{
author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Liarokapis, Efthymios and Antonakos, Anastasios and Telečki, Igor N.",
year = "2013",
abstract = "In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.",
journal = "Journal of Raman Spectroscopy",
title = "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation",
volume = "44",
number = "3",
pages = "496-500",
doi = "10.1002/jrs.4211"
}

Erich, M., Petrović, S. M., Kokkoris, M., Liarokapis, E., Antonakos, A.,& Telečki, I. N.. (2013). Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy, 44(3), 496-500.
https://doi.org/10.1002/jrs.4211

Erich M, Petrović SM, Kokkoris M, Liarokapis E, Antonakos A, Telečki IN. Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy. 2013;44(3):496-500.
doi:10.1002/jrs.4211 .

Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Liarokapis, Efthymios, Antonakos, Anastasios, Telečki, Igor N., "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation" in Journal of Raman Spectroscopy, 44, no. 3 (2013):496-500,
https://doi.org/10.1002/jrs.4211 . .