TY  - JOUR
AU  - Pejović, Svetlana M.
AU  - Pejović, Milić M.
AU  - Živanović, Miloš Z.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8371
AB  - In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabricated at Tyndall National Institute, Cork, Ireland irradiation was performed with gamma-rays in the radiation dose interval from 1 to 5 cGy, followed with room temperature annealing for the time of 28 days. Gate bias during irradiation was 0, 2.5 and 5 V. Threshold voltage shift ΔVT determined from transfer characteristics in saturation were followed during irradiation and annealing. It was shown that there is significant increase in ΔVT for 1 cGy radiation dose and those are 36.3, 43.3 mV and 45.7 mV for gate bias 0, 2.5 V and 5 V, respectively. For higher radiation doses ΔVT also increases, however, such increase is much lower. RADFETs fading at room temperature lead to permanent decrease in ΔVT and after 28 days the threshold voltage for devices is returned to virgin device value. Small dose effect is confirmed and radiation dose of at least 5 cGy is necessary for RADFET stabilization before their use in dosimetric application. After RADFETs stabilization they were irradiated in dose interval from 10 to 50 cGy with gate bias of 0, 2.5 and 5 V. It was shown that there is a linear dependence between ΔVT and absorbed radiation dose D, for gate bias during irradiation 0, 2.5 and 5 V. Defects responsible for threshold voltage shift, formed during irradiation as well as their neutralization/compensation during annealing, are also discussed. © 2019
T2  - Applied Radiation and Isotopes
T1  - Small dose effect in RADFET with thick gate oxide
VL  - 152
SP  - 72
EP  - 77
DO  - 10.1016/j.apradiso.2019.06.034
ER  - 

@article{
author = "Pejović, Svetlana M. and Pejović, Milić M. and Živanović, Miloš Z.",
year = "2019",
abstract = "In order to track “small dose effect” leading to stabilization of RADFETs with 1 μm thick oxide fabricated at Tyndall National Institute, Cork, Ireland irradiation was performed with gamma-rays in the radiation dose interval from 1 to 5 cGy, followed with room temperature annealing for the time of 28 days. Gate bias during irradiation was 0, 2.5 and 5 V. Threshold voltage shift ΔVT determined from transfer characteristics in saturation were followed during irradiation and annealing. It was shown that there is significant increase in ΔVT for 1 cGy radiation dose and those are 36.3, 43.3 mV and 45.7 mV for gate bias 0, 2.5 V and 5 V, respectively. For higher radiation doses ΔVT also increases, however, such increase is much lower. RADFETs fading at room temperature lead to permanent decrease in ΔVT and after 28 days the threshold voltage for devices is returned to virgin device value. Small dose effect is confirmed and radiation dose of at least 5 cGy is necessary for RADFET stabilization before their use in dosimetric application. After RADFETs stabilization they were irradiated in dose interval from 10 to 50 cGy with gate bias of 0, 2.5 and 5 V. It was shown that there is a linear dependence between ΔVT and absorbed radiation dose D, for gate bias during irradiation 0, 2.5 and 5 V. Defects responsible for threshold voltage shift, formed during irradiation as well as their neutralization/compensation during annealing, are also discussed. © 2019",
journal = "Applied Radiation and Isotopes",
title = "Small dose effect in RADFET with thick gate oxide",
volume = "152",
pages = "72-77",
doi = "10.1016/j.apradiso.2019.06.034"
}

Pejović, S. M., Pejović, M. M.,& Živanović, M. Z.. (2019). Small dose effect in RADFET with thick gate oxide. in Applied Radiation and Isotopes, 152, 72-77.
https://doi.org/10.1016/j.apradiso.2019.06.034

Pejović SM, Pejović MM, Živanović MZ. Small dose effect in RADFET with thick gate oxide. in Applied Radiation and Isotopes. 2019;152:72-77.
doi:10.1016/j.apradiso.2019.06.034 .

Pejović, Svetlana M., Pejović, Milić M., Živanović, Miloš Z., "Small dose effect in RADFET with thick gate oxide" in Applied Radiation and Isotopes, 152 (2019):72-77,
https://doi.org/10.1016/j.apradiso.2019.06.034 . .