@conference{
author = "Gloginjić, Marko and Erich, Marko and Mravik, Željko and Vrban, Branislav and Čerba, Štefan and Lüley, Jakub and Filová, Vendula and Katovský, Karel and Štastný, Ondřej and Burian, Jiří and Petrović, Srđan M.",
year = "2022",
abstract = "During the ion implantation process, regardless if it was attentional or not, amorphization will be introduced into the crystal structure. Depending on the chosen ions, different quantities of the amorphization will be introduced for the same applied fluences. In order to estimate the total amorphization of the SiC crystal for different ions and fluences combination, an assessment model was proposed. For this purpose, 4 MeV carbon and silicon ions with multiple fluences were implanted in the [0001] axial direction of a 6H-SiC single crystal. The amorphization depth distributions were obtained by Elastic Backscattering Spectroscopy/channeling spectra analysis via Channeling SIMulation (CSIM) phenomenological computer code. As a result, relation of the total induced amorphization and implantation fluences for carbon and silicon ions were obtained. Based on these experimental results, a total amorphization assessment model for different ions (energy of 4 MeV) and fluences combination was established.",
publisher = "Belgrade : Serbian Ceramic Society",
journal = "Advanced Ceramics and Application : 10th Serbian Ceramic Society Conference : program and the book of abstracts; September 26-27, 2022; Belgrade",
title = "Correlation of the total induced amorphization in SiC crystal with the ion implantation fluence",
pages = "82",
url = "https://hdl.handle.net/21.15107/rcub_vinar_10822"
}