Bogdanović-Radović, Ivančica

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  • Bogdanović-Radović, Ivančica (3)
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Author's Bibliography

Laser induced damage/ablation morphology on the 8(Al/Ti)/Si system in different ambient conditions

Petrović, Suzana; Peruško, Davor; Salatić, Branislav; Bogdanović-Radović, Ivančica; Panjan, Peter; Gaković, Biljana M.; Pantelić, Dejan; Trtica, Milan; Jelenković, Branislav

(2013)

TY  - JOUR
AU  - Petrović, Suzana
AU  - Peruško, Davor
AU  - Salatić, Branislav
AU  - Bogdanović-Radović, Ivančica
AU  - Panjan, Peter
AU  - Gaković, Biljana M.
AU  - Pantelić, Dejan
AU  - Trtica, Milan
AU  - Jelenković, Branislav
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5661
AB  - A study of morphological and composition changes of the (8(Al/Ti)/Si) system induced by laser pulses in different ambient conditions is presented. The effects of an Er, Yb, Cr-Glass laser, operating at 1540 nm wavelength with pulse duration of 44 ns, on a complex target were investigated. Irradiation of 8(Al/Ti)/Si was carried out at intensities of 5.9 and 9.5 x 10(11) W m(-2) in air, water and ethanol. The laser-induced morphological and composition modifications have shown dependence on applied intensities, number of laser pulses and ambient conditions. The following morphological changes were observed: (i) intense surface melting of the thin film and Si-substrate; (ii) ablation/exfoliation of the 8(Al/Ti) multilayer thin film from Si, (iii) appearance of hydrodynamic features such as resolidified material, and (iv) formation of crater at multi-pulse action. The formation of parallel periodic surface structure was only occurring in single pulse air-assisted modification. Analysis of the composition revealed that laser modification induced intermixing between the components of individual Al and Ti layers with potential formation of AlTi intermetallic compounds. (C) 2013 Elsevier Ltd. All rights reserved.
T2  - Optics and Laser Technology
T1  - Laser induced damage/ablation morphology on the 8(Al/Ti)/Si system in different ambient conditions
VL  - 54
SP  - 22
EP  - 29
DO  - 10.1016/j.optlastec.2013.04.030
ER  - 
@article{
author = "Petrović, Suzana and Peruško, Davor and Salatić, Branislav and Bogdanović-Radović, Ivančica and Panjan, Peter and Gaković, Biljana M. and Pantelić, Dejan and Trtica, Milan and Jelenković, Branislav",
year = "2013",
abstract = "A study of morphological and composition changes of the (8(Al/Ti)/Si) system induced by laser pulses in different ambient conditions is presented. The effects of an Er, Yb, Cr-Glass laser, operating at 1540 nm wavelength with pulse duration of 44 ns, on a complex target were investigated. Irradiation of 8(Al/Ti)/Si was carried out at intensities of 5.9 and 9.5 x 10(11) W m(-2) in air, water and ethanol. The laser-induced morphological and composition modifications have shown dependence on applied intensities, number of laser pulses and ambient conditions. The following morphological changes were observed: (i) intense surface melting of the thin film and Si-substrate; (ii) ablation/exfoliation of the 8(Al/Ti) multilayer thin film from Si, (iii) appearance of hydrodynamic features such as resolidified material, and (iv) formation of crater at multi-pulse action. The formation of parallel periodic surface structure was only occurring in single pulse air-assisted modification. Analysis of the composition revealed that laser modification induced intermixing between the components of individual Al and Ti layers with potential formation of AlTi intermetallic compounds. (C) 2013 Elsevier Ltd. All rights reserved.",
journal = "Optics and Laser Technology",
title = "Laser induced damage/ablation morphology on the 8(Al/Ti)/Si system in different ambient conditions",
volume = "54",
pages = "22-29",
doi = "10.1016/j.optlastec.2013.04.030"
}
Petrović, S., Peruško, D., Salatić, B., Bogdanović-Radović, I., Panjan, P., Gaković, B. M., Pantelić, D., Trtica, M.,& Jelenković, B.. (2013). Laser induced damage/ablation morphology on the 8(Al/Ti)/Si system in different ambient conditions. in Optics and Laser Technology, 54, 22-29.
https://doi.org/10.1016/j.optlastec.2013.04.030
Petrović S, Peruško D, Salatić B, Bogdanović-Radović I, Panjan P, Gaković BM, Pantelić D, Trtica M, Jelenković B. Laser induced damage/ablation morphology on the 8(Al/Ti)/Si system in different ambient conditions. in Optics and Laser Technology. 2013;54:22-29.
doi:10.1016/j.optlastec.2013.04.030 .
Petrović, Suzana, Peruško, Davor, Salatić, Branislav, Bogdanović-Radović, Ivančica, Panjan, Peter, Gaković, Biljana M., Pantelić, Dejan, Trtica, Milan, Jelenković, Branislav, "Laser induced damage/ablation morphology on the 8(Al/Ti)/Si system in different ambient conditions" in Optics and Laser Technology, 54 (2013):22-29,
https://doi.org/10.1016/j.optlastec.2013.04.030 . .
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Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films

Petrović, Suzana; Gaković, Biljana M.; Peruško, Davor; Stratakis, E.; Bogdanović-Radović, Ivančica; Čekada, Miha; Fotakis, C.; Jelenković, Branislav

(2013)

TY  - JOUR
AU  - Petrović, Suzana
AU  - Gaković, Biljana M.
AU  - Peruško, Davor
AU  - Stratakis, E.
AU  - Bogdanović-Radović, Ivančica
AU  - Čekada, Miha
AU  - Fotakis, C.
AU  - Jelenković, Branislav
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5819
AB  - Laser-induced periodic surface structures (LIPSSs) and chemical composition changes of Ti-based nanolayered thin films (Al/Ti, Ni/Ti) after femtosecond (fs) laser pulses action were studied. Irradiation is performed using linearly polarized Ti:Sapphire fs laser pulses of 40 fs pulse duration and 800 nm wavelength. The low spatial frequency LIPSS (LSFL), oriented perpendicular to the laser polarization with periods slightly lower than the irradiation wavelength, was typically formed at elevated laser fluences. On the contrary, high spatial frequency LIPSS (HSFL) with uniform period of 155 nm, parallel to the laser light polarization, appeared at low laser fluences, as well as in the wings of the Gaussian laser beam distribution for higher used fluence. LSFL formation was associated with the material ablation process and accompanied by the intense formation of nanoparticles, especially in the Ni/Ti system. The composition changes at the surface of both multilayer systems in the LSFL area indicated the intermixing between layers and the substrate. Concentration and distribution of all constitutive elements in the irradiated area with formed HSFLs were almost unchanged. (C) 2013 AIP Publishing LLC.
T2  - Journal of Applied Physics
T1  - Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films
VL  - 114
IS  - 23
DO  - 10.1063/1.4848016
ER  - 
@article{
author = "Petrović, Suzana and Gaković, Biljana M. and Peruško, Davor and Stratakis, E. and Bogdanović-Radović, Ivančica and Čekada, Miha and Fotakis, C. and Jelenković, Branislav",
year = "2013",
abstract = "Laser-induced periodic surface structures (LIPSSs) and chemical composition changes of Ti-based nanolayered thin films (Al/Ti, Ni/Ti) after femtosecond (fs) laser pulses action were studied. Irradiation is performed using linearly polarized Ti:Sapphire fs laser pulses of 40 fs pulse duration and 800 nm wavelength. The low spatial frequency LIPSS (LSFL), oriented perpendicular to the laser polarization with periods slightly lower than the irradiation wavelength, was typically formed at elevated laser fluences. On the contrary, high spatial frequency LIPSS (HSFL) with uniform period of 155 nm, parallel to the laser light polarization, appeared at low laser fluences, as well as in the wings of the Gaussian laser beam distribution for higher used fluence. LSFL formation was associated with the material ablation process and accompanied by the intense formation of nanoparticles, especially in the Ni/Ti system. The composition changes at the surface of both multilayer systems in the LSFL area indicated the intermixing between layers and the substrate. Concentration and distribution of all constitutive elements in the irradiated area with formed HSFLs were almost unchanged. (C) 2013 AIP Publishing LLC.",
journal = "Journal of Applied Physics",
title = "Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films",
volume = "114",
number = "23",
doi = "10.1063/1.4848016"
}
Petrović, S., Gaković, B. M., Peruško, D., Stratakis, E., Bogdanović-Radović, I., Čekada, M., Fotakis, C.,& Jelenković, B.. (2013). Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films. in Journal of Applied Physics, 114(23).
https://doi.org/10.1063/1.4848016
Petrović S, Gaković BM, Peruško D, Stratakis E, Bogdanović-Radović I, Čekada M, Fotakis C, Jelenković B. Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films. in Journal of Applied Physics. 2013;114(23).
doi:10.1063/1.4848016 .
Petrović, Suzana, Gaković, Biljana M., Peruško, Davor, Stratakis, E., Bogdanović-Radović, Ivančica, Čekada, Miha, Fotakis, C., Jelenković, Branislav, "Femtosecond laser-induced periodic surface structure on the Ti-based nanolayered thin films" in Journal of Applied Physics, 114, no. 23 (2013),
https://doi.org/10.1063/1.4848016 . .
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Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films

Petrović, Suzana; Peruško, Davor; Gaković, Biljana M.; Mitrić, Miodrag; Kovač, Janez; Zalar, A.; Milinović, Velimir; Bogdanović-Radović, Ivančica; Milosavljević, Momir

(2010)

TY  - JOUR
AU  - Petrović, Suzana
AU  - Peruško, Davor
AU  - Gaković, Biljana M.
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Zalar, A.
AU  - Milinović, Velimir
AU  - Bogdanović-Radović, Ivančica
AU  - Milosavljević, Momir
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6861
AB  - In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved.
T2  - Surface and Coatings Technology
T1  - Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films
VL  - 204
IS  - 12-13
SP  - 2099
EP  - 2102
DO  - 10.1016/j.surfcoat.2009.09.048
ER  - 
@article{
author = "Petrović, Suzana and Peruško, Davor and Gaković, Biljana M. and Mitrić, Miodrag and Kovač, Janez and Zalar, A. and Milinović, Velimir and Bogdanović-Radović, Ivančica and Milosavljević, Momir",
year = "2010",
abstract = "In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved.",
journal = "Surface and Coatings Technology",
title = "Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films",
volume = "204",
number = "12-13",
pages = "2099-2102",
doi = "10.1016/j.surfcoat.2009.09.048"
}
Petrović, S., Peruško, D., Gaković, B. M., Mitrić, M., Kovač, J., Zalar, A., Milinović, V., Bogdanović-Radović, I.,& Milosavljević, M.. (2010). Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films. in Surface and Coatings Technology, 204(12-13), 2099-2102.
https://doi.org/10.1016/j.surfcoat.2009.09.048
Petrović S, Peruško D, Gaković BM, Mitrić M, Kovač J, Zalar A, Milinović V, Bogdanović-Radović I, Milosavljević M. Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films. in Surface and Coatings Technology. 2010;204(12-13):2099-2102.
doi:10.1016/j.surfcoat.2009.09.048 .
Petrović, Suzana, Peruško, Davor, Gaković, Biljana M., Mitrić, Miodrag, Kovač, Janez, Zalar, A., Milinović, Velimir, Bogdanović-Radović, Ivančica, Milosavljević, Momir, "Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films" in Surface and Coatings Technology, 204, no. 12-13 (2010):2099-2102,
https://doi.org/10.1016/j.surfcoat.2009.09.048 . .
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