TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Živanović, E.
AU  - Stanković, Srboljub
AU  - Anđelković, M.
AU  - Ristić, G.
AU  - Paskleva, A.
AU  - Spassov, D.
AU  - Danković, Danijel
AU  - Manić, I.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12120
AB  - This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 33rd International Conference on Microelectronics : Proceedings book
T1  - Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation
SP  - 277
EP  - 280
DO  - 10.1109/MIEL58498.2023.10315932
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Živanović, E. and Stanković, Srboljub and Anđelković, M. and Ristić, G. and Paskleva, A. and Spassov, D. and Danković, Danijel and Manić, I.",
year = "2023",
abstract = "This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 33rd International Conference on Microelectronics : Proceedings book",
title = "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation",
pages = "277-280",
doi = "10.1109/MIEL58498.2023.10315932"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Živanović, E., Stanković, S., Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, D.,& Manić, I.. (2023). Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 277-280.
https://doi.org/10.1109/MIEL58498.2023.10315932

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Živanović E, Stanković S, Anđelković M, Ristić G, Paskleva A, Spassov D, Danković D, Manić I. Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book. 2023;:277-280.
doi:10.1109/MIEL58498.2023.10315932 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Živanović, E., Stanković, Srboljub, Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, Danijel, Manić, I., "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation" in MIEL : 33rd International Conference on Microelectronics : Proceedings book (2023):277-280,
https://doi.org/10.1109/MIEL58498.2023.10315932 . .

TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Manić, Ivica
AU  - Golubović, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dentcho
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stanković, Srboljub
AU  - Danković, Danijel
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12119
AB  - The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 32nd International Conference on Microelectronics : Proceedings book
T1  - Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors
SP  - 345
EP  - 350
DO  - 10.1109/MIEL52794.2021.9569154
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Manić, Ivica and Golubović, Snežana and Paskaleva, Albena and Spassov, Dentcho and Prijić, Zoran and Prijić, Aneta and Stanković, Srboljub and Danković, Danijel",
year = "2021",
abstract = "The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 32nd International Conference on Microelectronics : Proceedings book",
title = "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors",
pages = "345-350",
doi = "10.1109/MIEL52794.2021.9569154"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Manić, I., Golubović, S., Paskaleva, A., Spassov, D., Prijić, Z., Prijić, A., Stanković, S.,& Danković, D.. (2021). Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 345-350.
https://doi.org/10.1109/MIEL52794.2021.9569154

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Manić I, Golubović S, Paskaleva A, Spassov D, Prijić Z, Prijić A, Stanković S, Danković D. Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book. 2021;:345-350.
doi:10.1109/MIEL52794.2021.9569154 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Manić, Ivica, Golubović, Snežana, Paskaleva, Albena, Spassov, Dentcho, Prijić, Zoran, Prijić, Aneta, Stanković, Srboljub, Danković, Danijel, "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors" in MIEL : 32nd International Conference on Microelectronics : Proceedings book (2021):345-350,
https://doi.org/10.1109/MIEL52794.2021.9569154 . .

TY  - JOUR
AU  - Spassov, Dencho
AU  - Paskaleva, Albena
AU  - Guziewicz, Elżbieta
AU  - Davidović, Vojkan
AU  - Stanković, Srboljub
AU  - Đorić-Veljković, Snežana
AU  - Ivanov, Tzvetan
AU  - Stanchev, Todor
AU  - Stojadinović, Ninoslav
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9089
AB  - High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.
T2  - Materials
T1  - Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics
VL  - 14
IS  - 4
SP  - 849
DO  - 10.3390/ma14040849
ER  - 

@article{
author = "Spassov, Dencho and Paskaleva, Albena and Guziewicz, Elżbieta and Davidović, Vojkan and Stanković, Srboljub and Đorić-Veljković, Snežana and Ivanov, Tzvetan and Stanchev, Todor and Stojadinović, Ninoslav",
year = "2021",
abstract = "High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.",
journal = "Materials",
title = "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics",
volume = "14",
number = "4",
pages = "849",
doi = "10.3390/ma14040849"
}

Spassov, D., Paskaleva, A., Guziewicz, E., Davidović, V., Stanković, S., Đorić-Veljković, S., Ivanov, T., Stanchev, T.,& Stojadinović, N.. (2021). Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials, 14(4), 849.
https://doi.org/10.3390/ma14040849

Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković S, Đorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N. Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials. 2021;14(4):849.
doi:10.3390/ma14040849 .

Spassov, Dencho, Paskaleva, Albena, Guziewicz, Elżbieta, Davidović, Vojkan, Stanković, Srboljub, Đorić-Veljković, Snežana, Ivanov, Tzvetan, Stanchev, Todor, Stojadinović, Ninoslav, "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics" in Materials, 14, no. 4 (2021):849,
https://doi.org/10.3390/ma14040849 . .

TY  - CONF
AU  - Spassov, Dentcho
AU  - Paskaleva, Albena
AU  - Davidović, Vojkan S.
AU  - Đorić-Veljković, Snežana M.
AU  - Stanković, Srboljub
AU  - Stojadinović, Ninoslav D.
AU  - Ivanov, Tzvetan E.
AU  - Stanchev, T.
PY  - 2019
UR  - https://ieeexplore.ieee.org/document/8889600/
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8658
AB  - The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics (MIEL)
T1  - Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks
SP  - 59
EP  - 62
DO  - 10.1109/MIEL.2019.8889600
ER  - 

@conference{
author = "Spassov, Dentcho and Paskaleva, Albena and Davidović, Vojkan S. and Đorić-Veljković, Snežana M. and Stanković, Srboljub and Stojadinović, Ninoslav D. and Ivanov, Tzvetan E. and Stanchev, T.",
year = "2019",
abstract = "The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics (MIEL)",
title = "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks",
pages = "59-62",
doi = "10.1109/MIEL.2019.8889600"
}

Spassov, D., Paskaleva, A., Davidović, V. S., Đorić-Veljković, S. M., Stanković, S., Stojadinović, N. D., Ivanov, T. E.,& Stanchev, T.. (2019). Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. in 2019 IEEE 31st International Conference on Microelectronics (MIEL)
IEEE., 59-62.
https://doi.org/10.1109/MIEL.2019.8889600

Spassov D, Paskaleva A, Davidović VS, Đorić-Veljković SM, Stanković S, Stojadinović ND, Ivanov TE, Stanchev T. Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. in 2019 IEEE 31st International Conference on Microelectronics (MIEL). 2019;:59-62.
doi:10.1109/MIEL.2019.8889600 .

Spassov, Dentcho, Paskaleva, Albena, Davidović, Vojkan S., Đorić-Veljković, Snežana M., Stanković, Srboljub, Stojadinović, Ninoslav D., Ivanov, Tzvetan E., Stanchev, T., "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks" in 2019 IEEE 31st International Conference on Microelectronics (MIEL) (2019):59-62,
https://doi.org/10.1109/MIEL.2019.8889600 . .

TY  - JOUR
AU  - Davidović, Vojkan
AU  - Danković, Danijel
AU  - Golubović, Snežana
AU  - Đorić-Veljković, Snežana
AU  - Manić, Ivica
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stojadinović, Ninoslav
AU  - Stanković, Srboljub
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12131
AB  - In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.
T2  - Facta universitatis - series: Electronics and Energetics
T1  - NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs
VL  - 31
IS  - 3
SP  - 367
EP  - 388
DO  - 10.2298/FUEE1803367D
ER  - 

@article{
author = "Davidović, Vojkan and Danković, Danijel and Golubović, Snežana and Đorić-Veljković, Snežana and Manić, Ivica and Prijić, Zoran and Prijić, Aneta and Stojadinović, Ninoslav and Stanković, Srboljub",
year = "2018",
abstract = "In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.",
journal = "Facta universitatis - series: Electronics and Energetics",
title = "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs",
volume = "31",
number = "3",
pages = "367-388",
doi = "10.2298/FUEE1803367D"
}

Davidović, V., Danković, D., Golubović, S., Đorić-Veljković, S., Manić, I., Prijić, Z., Prijić, A., Stojadinović, N.,& Stanković, S.. (2018). NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics, 31(3), 367-388.
https://doi.org/10.2298/FUEE1803367D

Davidović V, Danković D, Golubović S, Đorić-Veljković S, Manić I, Prijić Z, Prijić A, Stojadinović N, Stanković S. NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics. 2018;31(3):367-388.
doi:10.2298/FUEE1803367D .

Davidović, Vojkan, Danković, Danijel, Golubović, Snežana, Đorić-Veljković, Snežana, Manić, Ivica, Prijić, Zoran, Prijić, Aneta, Stojadinović, Ninoslav, Stanković, Srboljub, "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs" in Facta universitatis - series: Electronics and Energetics, 31, no. 3 (2018):367-388,
https://doi.org/10.2298/FUEE1803367D . .

TY  - JOUR
AU  - Stojanović Krasić, Marija
AU  - Mančić, Ana
AU  - Kuzmanović, Slavica
AU  - Đorić-Veljković, Snežana M.
AU  - Stepić, Milutin
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1531
AB  - We numerically analysed various localized modes formed by light beam propagation through one-dimensional composite lattices consisting of two structurally different linear lattices and a linear defect (LD) in one of them. The localized modes are found in the area between the interface and the LD, near the interface and around the LD. It has been confirmed that a LD narrower than the other waveguides (WGs) in the array is better potential barrier and captures the light better than a LD that is wider than the other WGs in the array. Also, it has been shown that a LD narrower than the other WGs in the lattice captures the light more efficiently than any saturable nonlinear defect (ND) of the same width as other elements of the lattice. On the other hand, it is obtained that the influence of a LD wider than the other WGs in the array on light propagation can be mimicked by insertion of an adequate ND whose width coincides with that of the other WGs. Depending on the defect size, its position and input beam parameters, controllable beam trapping, reflection and refraction are observed.
T2  - Optics Communications
T1  - Linear and interface defects in composite linear photonic lattice
VL  - 394
SP  - 6
EP  - 13
DO  - 10.1016/j.optcom.2017.02.021
ER  - 

@article{
author = "Stojanović Krasić, Marija and Mančić, Ana and Kuzmanović, Slavica and Đorić-Veljković, Snežana M. and Stepić, Milutin",
year = "2017",
abstract = "We numerically analysed various localized modes formed by light beam propagation through one-dimensional composite lattices consisting of two structurally different linear lattices and a linear defect (LD) in one of them. The localized modes are found in the area between the interface and the LD, near the interface and around the LD. It has been confirmed that a LD narrower than the other waveguides (WGs) in the array is better potential barrier and captures the light better than a LD that is wider than the other WGs in the array. Also, it has been shown that a LD narrower than the other WGs in the lattice captures the light more efficiently than any saturable nonlinear defect (ND) of the same width as other elements of the lattice. On the other hand, it is obtained that the influence of a LD wider than the other WGs in the array on light propagation can be mimicked by insertion of an adequate ND whose width coincides with that of the other WGs. Depending on the defect size, its position and input beam parameters, controllable beam trapping, reflection and refraction are observed.",
journal = "Optics Communications",
title = "Linear and interface defects in composite linear photonic lattice",
volume = "394",
pages = "6-13",
doi = "10.1016/j.optcom.2017.02.021"
}

Stojanović Krasić, M., Mančić, A., Kuzmanović, S., Đorić-Veljković, S. M.,& Stepić, M.. (2017). Linear and interface defects in composite linear photonic lattice. in Optics Communications, 394, 6-13.
https://doi.org/10.1016/j.optcom.2017.02.021

Stojanović Krasić M, Mančić A, Kuzmanović S, Đorić-Veljković SM, Stepić M. Linear and interface defects in composite linear photonic lattice. in Optics Communications. 2017;394:6-13.
doi:10.1016/j.optcom.2017.02.021 .

Stojanović Krasić, Marija, Mančić, Ana, Kuzmanović, Slavica, Đorić-Veljković, Snežana M., Stepić, Milutin, "Linear and interface defects in composite linear photonic lattice" in Optics Communications, 394 (2017):6-13,
https://doi.org/10.1016/j.optcom.2017.02.021 . .

TY  - CONF
AU  - Stojanović-Krasić, Marija T.
AU  - Mančić, Ana M.
AU  - Kuzmanovic, Slavica
AU  - Đorić-Veljković, Snežana M.
AU  - Stepić, Milutin
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12004
AB  - Photonic lattices represent suitable systems for investigation of wave propagation in periodic structures [1]. However, different unavoidable defects may arise either during their process of fabrication or as result of misusage, accidental damage, etc. Although undesirable in the first place, these imperfections enable the existence of different types of stable, localized defect modes [2]. In this paper, we investigate light propagation through composite photonic lattice composed of two identical linear and lossless lattices. The interface between them represents a geometric defect, while each lattice contains a single nonlinear defect that is placed symmetrically with respect to the interface. Depending on the input light beam parameters (its position, width and transverse tilt), the width of geometric defect, strength and position of the nonlinear defects, different dynamical regimes have been identified. These dynamical regimes are caused by the balance of photonic lattice potentials’ contributions originating from the presence of the geometric and two nonlinear defects. We have found numerically conditions under which dynamically stable bounded modes can exist in the area between nonlinear defects or between a nonlinear and a geometric defect. Various types of localized modes such as: two-hump, multi-hump, one- and multicomponent moving breathers localized at a certain area among defects have been observed. The parameters can be adjusted to capture light and to prevent light launched inside the area among defects to leave it, i.e. this corresponds to the appearance of the modes trapped inside this area. Since the configuration of the lattice prevents transmission of the light through the area confined by defects, these modes can formally be related to Fano resonances and Fano- blockade [3, 4]. When light is launched outside the area among defects, different dynamical regimes have been distinguished: total reflection, single and double partial reflection and full transmission through the area among defects. These numerical findings may lead to interesting applications such as blocking, filtering and transporting light beams through the optical medium. Photonic devices based on resonant tunneling such as waveguides interacting through the area between defects, may be applied as add-drop filters.
PB  - Belgrade : Vinča Institute of Nuclear Sciences
C3  - PHOTONICA2015 : 5th International School and Conference on Photonics and COST actions: MP1204, BM1205 and MP1205 : book of abstracts; August 24-28, 2015; Belgrade
T1  - Strong coupling regime of semiconductor quantum dot embedded in the nano-cavity
SP  - 70
EP  - 71
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12004
ER  - 

@conference{
author = "Stojanović-Krasić, Marija T. and Mančić, Ana M. and Kuzmanovic, Slavica and Đorić-Veljković, Snežana M. and Stepić, Milutin",
year = "2015",
abstract = "Photonic lattices represent suitable systems for investigation of wave propagation in periodic structures [1]. However, different unavoidable defects may arise either during their process of fabrication or as result of misusage, accidental damage, etc. Although undesirable in the first place, these imperfections enable the existence of different types of stable, localized defect modes [2]. In this paper, we investigate light propagation through composite photonic lattice composed of two identical linear and lossless lattices. The interface between them represents a geometric defect, while each lattice contains a single nonlinear defect that is placed symmetrically with respect to the interface. Depending on the input light beam parameters (its position, width and transverse tilt), the width of geometric defect, strength and position of the nonlinear defects, different dynamical regimes have been identified. These dynamical regimes are caused by the balance of photonic lattice potentials’ contributions originating from the presence of the geometric and two nonlinear defects. We have found numerically conditions under which dynamically stable bounded modes can exist in the area between nonlinear defects or between a nonlinear and a geometric defect. Various types of localized modes such as: two-hump, multi-hump, one- and multicomponent moving breathers localized at a certain area among defects have been observed. The parameters can be adjusted to capture light and to prevent light launched inside the area among defects to leave it, i.e. this corresponds to the appearance of the modes trapped inside this area. Since the configuration of the lattice prevents transmission of the light through the area confined by defects, these modes can formally be related to Fano resonances and Fano- blockade [3, 4]. When light is launched outside the area among defects, different dynamical regimes have been distinguished: total reflection, single and double partial reflection and full transmission through the area among defects. These numerical findings may lead to interesting applications such as blocking, filtering and transporting light beams through the optical medium. Photonic devices based on resonant tunneling such as waveguides interacting through the area between defects, may be applied as add-drop filters.",
publisher = "Belgrade : Vinča Institute of Nuclear Sciences",
journal = "PHOTONICA2015 : 5th International School and Conference on Photonics and COST actions: MP1204, BM1205 and MP1205 : book of abstracts; August 24-28, 2015; Belgrade",
title = "Strong coupling regime of semiconductor quantum dot embedded in the nano-cavity",
pages = "70-71",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12004"
}

Stojanović-Krasić, M. T., Mančić, A. M., Kuzmanovic, S., Đorić-Veljković, S. M.,& Stepić, M.. (2015). Strong coupling regime of semiconductor quantum dot embedded in the nano-cavity. in PHOTONICA2015 : 5th International School and Conference on Photonics and COST actions: MP1204, BM1205 and MP1205 : book of abstracts; August 24-28, 2015; Belgrade
Belgrade : Vinča Institute of Nuclear Sciences., 70-71.
https://hdl.handle.net/21.15107/rcub_vinar_12004

Stojanović-Krasić MT, Mančić AM, Kuzmanovic S, Đorić-Veljković SM, Stepić M. Strong coupling regime of semiconductor quantum dot embedded in the nano-cavity. in PHOTONICA2015 : 5th International School and Conference on Photonics and COST actions: MP1204, BM1205 and MP1205 : book of abstracts; August 24-28, 2015; Belgrade. 2015;:70-71.
https://hdl.handle.net/21.15107/rcub_vinar_12004 .

Stojanović-Krasić, Marija T., Mančić, Ana M., Kuzmanovic, Slavica, Đorić-Veljković, Snežana M., Stepić, Milutin, "Strong coupling regime of semiconductor quantum dot embedded in the nano-cavity" in PHOTONICA2015 : 5th International School and Conference on Photonics and COST actions: MP1204, BM1205 and MP1205 : book of abstracts; August 24-28, 2015; Belgrade (2015):70-71,
https://hdl.handle.net/21.15107/rcub_vinar_12004 .