TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Manić, Ivica
AU  - Golubović, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dentcho
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stanković, Srboljub
AU  - Danković, Danijel
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12119
AB  - The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 32nd International Conference on Microelectronics : Proceedings book
T1  - Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors
SP  - 345
EP  - 350
DO  - 10.1109/MIEL52794.2021.9569154
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Manić, Ivica and Golubović, Snežana and Paskaleva, Albena and Spassov, Dentcho and Prijić, Zoran and Prijić, Aneta and Stanković, Srboljub and Danković, Danijel",
year = "2021",
abstract = "The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 32nd International Conference on Microelectronics : Proceedings book",
title = "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors",
pages = "345-350",
doi = "10.1109/MIEL52794.2021.9569154"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Manić, I., Golubović, S., Paskaleva, A., Spassov, D., Prijić, Z., Prijić, A., Stanković, S.,& Danković, D.. (2021). Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 345-350.
https://doi.org/10.1109/MIEL52794.2021.9569154

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Manić I, Golubović S, Paskaleva A, Spassov D, Prijić Z, Prijić A, Stanković S, Danković D. Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book. 2021;:345-350.
doi:10.1109/MIEL52794.2021.9569154 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Manić, Ivica, Golubović, Snežana, Paskaleva, Albena, Spassov, Dentcho, Prijić, Zoran, Prijić, Aneta, Stanković, Srboljub, Danković, Danijel, "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors" in MIEL : 32nd International Conference on Microelectronics : Proceedings book (2021):345-350,
https://doi.org/10.1109/MIEL52794.2021.9569154 . .

TY  - CONF
AU  - Spassov, Dentcho
AU  - Paskaleva, Albena
AU  - Davidović, Vojkan S.
AU  - Đorić-Veljković, Snežana M.
AU  - Stanković, Srboljub
AU  - Stojadinović, Ninoslav D.
AU  - Ivanov, Tzvetan E.
AU  - Stanchev, T.
PY  - 2019
UR  - https://ieeexplore.ieee.org/document/8889600/
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8658
AB  - The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics (MIEL)
T1  - Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks
SP  - 59
EP  - 62
DO  - 10.1109/MIEL.2019.8889600
ER  - 

@conference{
author = "Spassov, Dentcho and Paskaleva, Albena and Davidović, Vojkan S. and Đorić-Veljković, Snežana M. and Stanković, Srboljub and Stojadinović, Ninoslav D. and Ivanov, Tzvetan E. and Stanchev, T.",
year = "2019",
abstract = "The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics (MIEL)",
title = "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks",
pages = "59-62",
doi = "10.1109/MIEL.2019.8889600"
}

Spassov, D., Paskaleva, A., Davidović, V. S., Đorić-Veljković, S. M., Stanković, S., Stojadinović, N. D., Ivanov, T. E.,& Stanchev, T.. (2019). Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. in 2019 IEEE 31st International Conference on Microelectronics (MIEL)
IEEE., 59-62.
https://doi.org/10.1109/MIEL.2019.8889600

Spassov D, Paskaleva A, Davidović VS, Đorić-Veljković SM, Stanković S, Stojadinović ND, Ivanov TE, Stanchev T. Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. in 2019 IEEE 31st International Conference on Microelectronics (MIEL). 2019;:59-62.
doi:10.1109/MIEL.2019.8889600 .

Spassov, Dentcho, Paskaleva, Albena, Davidović, Vojkan S., Đorić-Veljković, Snežana M., Stanković, Srboljub, Stojadinović, Ninoslav D., Ivanov, Tzvetan E., Stanchev, T., "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks" in 2019 IEEE 31st International Conference on Microelectronics (MIEL) (2019):59-62,
https://doi.org/10.1109/MIEL.2019.8889600 . .