TY  - JOUR
AU  - Balakshin, Yu. V.
AU  - Kozhemiako, A. V.
AU  - Petrović, Srđan M.
AU  - Erich, Marko
AU  - Shemukhin, Andrey A.
AU  - Chernysh, Vladimir S.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8436
AB  - Abstract: Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (1014–1015) ion/cm2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.
T2  - Semiconductors
T1  - Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon
VL  - 53
IS  - 8
SP  - 1011
EP  - 1017
DO  - 10.1134/S1063782619080062
ER  - 

@article{
author = "Balakshin, Yu. V. and Kozhemiako, A. V. and Petrović, Srđan M. and Erich, Marko and Shemukhin, Andrey A. and Chernysh, Vladimir S.",
year = "2019",
abstract = "Abstract: Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (1014–1015) ion/cm2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.",
journal = "Semiconductors",
title = "Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon",
volume = "53",
number = "8",
pages = "1011-1017",
doi = "10.1134/S1063782619080062"
}

Balakshin, Yu. V., Kozhemiako, A. V., Petrović, S. M., Erich, M., Shemukhin, A. A.,& Chernysh, V. S.. (2019). Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon. in Semiconductors, 53(8), 1011-1017.
https://doi.org/10.1134/S1063782619080062

Balakshin YV, Kozhemiako AV, Petrović SM, Erich M, Shemukhin AA, Chernysh VS. Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon. in Semiconductors. 2019;53(8):1011-1017.
doi:10.1134/S1063782619080062 .

Balakshin, Yu. V., Kozhemiako, A. V., Petrović, Srđan M., Erich, Marko, Shemukhin, Andrey A., Chernysh, Vladimir S., "Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon" in Semiconductors, 53, no. 8 (2019):1011-1017,
https://doi.org/10.1134/S1063782619080062 . .