TY  - JOUR
AU  - Fetahović, Irfan S.
AU  - Dolićanin, Edin C.
AU  - Lazarević, Đorđe R.
AU  - Lončar, Boris B.
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1938
AB  - In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.
T2  - Nuclear technology and radiation protection
T1  - Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies
VL  - 32
IS  - 4
SP  - 381
EP  - 392
DO  - 10.2298/NTRP1704381F
ER  - 

@article{
author = "Fetahović, Irfan S. and Dolićanin, Edin C. and Lazarević, Đorđe R. and Lončar, Boris B.",
year = "2017",
abstract = "In this paper we give an overview of radiation effects in emergent, non-volatile memory technologies. Investigations into radiation hardness of resistive random access memory, ferroelectric random access memory, magneto-resistive random access memory, and phase change memory are presented in cases where these memory devices were subjected to different types of radiation. The obtained results proved high radiation tolerance of studied devices making them good candidates for application in radiation-intensive environments.",
journal = "Nuclear technology and radiation protection",
title = "Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies",
volume = "32",
number = "4",
pages = "381-392",
doi = "10.2298/NTRP1704381F"
}

Fetahović, I. S., Dolićanin, E. C., Lazarević, Đ. R.,& Lončar, B. B.. (2017). Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies. in Nuclear technology and radiation protection, 32(4), 381-392.
https://doi.org/10.2298/NTRP1704381F

Fetahović IS, Dolićanin EC, Lazarević ĐR, Lončar BB. Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies. in Nuclear technology and radiation protection. 2017;32(4):381-392.
doi:10.2298/NTRP1704381F .

Fetahović, Irfan S., Dolićanin, Edin C., Lazarević, Đorđe R., Lončar, Boris B., "Overview of Radiation Effects on Emerging Non-Volatile Memory Technologies" in Nuclear technology and radiation protection, 32, no. 4 (2017):381-392,
https://doi.org/10.2298/NTRP1704381F . .

TY  - JOUR
AU  - Dolićanin, Edin C.
AU  - Fetahović, Irfan S.
AU  - Lazarević, Đorđe R.
AU  - Kartalović, Nenad M.
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1189
AB  - In this paper we analyze application of contemporary methods of insulation co-ordination and the enlargement law in designing a GM counting tube. It has been shown that by applying insulation co-ordination methods the counting tube can be optimally dimensioned. The application of the enlargement law was demonstrated in generalizing the results of test obtained by the GM tube to those obtained by the counting tube with m-times greater dimensions. The investigations were conducted both theoretically and by experiment. Using theoretical analysis, we derived the expressions that may be applied if a performance function of a random variable breakdown voltage is known. The experiments were conducted on a GM counter model under well controlled laboratory conditions.
T2  - Nuclear technology and radiation protection
T1  - Insulation Co-Ordination and the Enlargement Law for the Gm Counter Tube
VL  - 31
IS  - 2
SP  - 159
EP  - 164
DO  - 10.2298/NTRP1602159D
ER  - 

@article{
author = "Dolićanin, Edin C. and Fetahović, Irfan S. and Lazarević, Đorđe R. and Kartalović, Nenad M.",
year = "2016",
abstract = "In this paper we analyze application of contemporary methods of insulation co-ordination and the enlargement law in designing a GM counting tube. It has been shown that by applying insulation co-ordination methods the counting tube can be optimally dimensioned. The application of the enlargement law was demonstrated in generalizing the results of test obtained by the GM tube to those obtained by the counting tube with m-times greater dimensions. The investigations were conducted both theoretically and by experiment. Using theoretical analysis, we derived the expressions that may be applied if a performance function of a random variable breakdown voltage is known. The experiments were conducted on a GM counter model under well controlled laboratory conditions.",
journal = "Nuclear technology and radiation protection",
title = "Insulation Co-Ordination and the Enlargement Law for the Gm Counter Tube",
volume = "31",
number = "2",
pages = "159-164",
doi = "10.2298/NTRP1602159D"
}

Dolićanin, E. C., Fetahović, I. S., Lazarević, Đ. R.,& Kartalović, N. M.. (2016). Insulation Co-Ordination and the Enlargement Law for the Gm Counter Tube. in Nuclear technology and radiation protection, 31(2), 159-164.
https://doi.org/10.2298/NTRP1602159D

Dolićanin EC, Fetahović IS, Lazarević ĐR, Kartalović NM. Insulation Co-Ordination and the Enlargement Law for the Gm Counter Tube. in Nuclear technology and radiation protection. 2016;31(2):159-164.
doi:10.2298/NTRP1602159D .

Dolićanin, Edin C., Fetahović, Irfan S., Lazarević, Đorđe R., Kartalović, Nenad M., "Insulation Co-Ordination and the Enlargement Law for the Gm Counter Tube" in Nuclear technology and radiation protection, 31, no. 2 (2016):159-164,
https://doi.org/10.2298/NTRP1602159D . .

TY  - JOUR
AU  - Obrenović, Marija D.
AU  - Lazarević, Đorđe R.
AU  - Dolićanin, Edin C.
AU  - Vujisić, Miloš Lj.
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5450
AB  - This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components.
T2  - Nuclear technology and radiation protection
T1  - Effects of Ion Beams on Flash Memory Cells
VL  - 29
IS  - 2
SP  - 116
EP  - 122
DO  - 10.2298/NTRP1402116O
ER  - 

@article{
author = "Obrenović, Marija D. and Lazarević, Đorđe R. and Dolićanin, Edin C. and Vujisić, Miloš Lj.",
year = "2014",
abstract = "This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components.",
journal = "Nuclear technology and radiation protection",
title = "Effects of Ion Beams on Flash Memory Cells",
volume = "29",
number = "2",
pages = "116-122",
doi = "10.2298/NTRP1402116O"
}

Obrenović, M. D., Lazarević, Đ. R., Dolićanin, E. C.,& Vujisić, M. Lj.. (2014). Effects of Ion Beams on Flash Memory Cells. in Nuclear technology and radiation protection, 29(2), 116-122.
https://doi.org/10.2298/NTRP1402116O

Obrenović MD, Lazarević ĐR, Dolićanin EC, Vujisić ML. Effects of Ion Beams on Flash Memory Cells. in Nuclear technology and radiation protection. 2014;29(2):116-122.
doi:10.2298/NTRP1402116O .

Obrenović, Marija D., Lazarević, Đorđe R., Dolićanin, Edin C., Vujisić, Miloš Lj., "Effects of Ion Beams on Flash Memory Cells" in Nuclear technology and radiation protection, 29, no. 2 (2014):116-122,
https://doi.org/10.2298/NTRP1402116O . .

TY  - JOUR
AU  - Lazarević, Đorđe R.
AU  - Vujisić, Miloš Lj.
AU  - Stankovic, Koviljka Dj
AU  - Dolićanin, Edin C.
AU  - Osmokrović, Predrag V.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4771
AB  - This paper investigates possible radiation effects in the Cooper-pair insulator state of indium oxide films. Radiation effects are predicted on the basis of Monte Carlo simulations. Results of a combined theoretical and numerical analysis suggest that radiation-induced changes in the investigated films could significantly affect their current-voltage characteristics, and that a transition to a metallic state is possible, due to radiation-induced disruption of the fine-tuned granular structure. Dissociation of Cooper pairs, caused by both the incident radiation and the ions displaced within InOx films, can also destroy the conditions for this specific insulating state to subsist.
T2  - Nuclear technology and radiation protection
T1  - Radiation Hardness of Indium Oxide Films in the Cooper-Pair Insulator State
VL  - 27
IS  - 1
SP  - 40
EP  - 43
DO  - 10.2298/NTRP1201040L
ER  - 

@article{
author = "Lazarević, Đorđe R. and Vujisić, Miloš Lj. and Stankovic, Koviljka Dj and Dolićanin, Edin C. and Osmokrović, Predrag V.",
year = "2012",
abstract = "This paper investigates possible radiation effects in the Cooper-pair insulator state of indium oxide films. Radiation effects are predicted on the basis of Monte Carlo simulations. Results of a combined theoretical and numerical analysis suggest that radiation-induced changes in the investigated films could significantly affect their current-voltage characteristics, and that a transition to a metallic state is possible, due to radiation-induced disruption of the fine-tuned granular structure. Dissociation of Cooper pairs, caused by both the incident radiation and the ions displaced within InOx films, can also destroy the conditions for this specific insulating state to subsist.",
journal = "Nuclear technology and radiation protection",
title = "Radiation Hardness of Indium Oxide Films in the Cooper-Pair Insulator State",
volume = "27",
number = "1",
pages = "40-43",
doi = "10.2298/NTRP1201040L"
}

Lazarević, Đ. R., Vujisić, M. Lj., Stankovic, K. D., Dolićanin, E. C.,& Osmokrović, P. V.. (2012). Radiation Hardness of Indium Oxide Films in the Cooper-Pair Insulator State. in Nuclear technology and radiation protection, 27(1), 40-43.
https://doi.org/10.2298/NTRP1201040L

Lazarević ĐR, Vujisić ML, Stankovic KD, Dolićanin EC, Osmokrović PV. Radiation Hardness of Indium Oxide Films in the Cooper-Pair Insulator State. in Nuclear technology and radiation protection. 2012;27(1):40-43.
doi:10.2298/NTRP1201040L .

Lazarević, Đorđe R., Vujisić, Miloš Lj., Stankovic, Koviljka Dj, Dolićanin, Edin C., Osmokrović, Predrag V., "Radiation Hardness of Indium Oxide Films in the Cooper-Pair Insulator State" in Nuclear technology and radiation protection, 27, no. 1 (2012):40-43,
https://doi.org/10.2298/NTRP1201040L . .

TY  - JOUR
AU  - Pejovic, Momcilo M.
AU  - Pejović, Svetlana M.
AU  - Dolićanin, Edin C.
AU  - Lazarević, Đorđe R.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4634
AB  - Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.
T2  - Nuclear technology and radiation protection
T1  - Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides
VL  - 26
IS  - 3
SP  - 261
EP  - 265
DO  - 10.2298/NTRP1103261P
ER  - 

@article{
author = "Pejovic, Momcilo M. and Pejović, Svetlana M. and Dolićanin, Edin C. and Lazarević, Đorđe R.",
year = "2011",
abstract = "Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.",
journal = "Nuclear technology and radiation protection",
title = "Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides",
volume = "26",
number = "3",
pages = "261-265",
doi = "10.2298/NTRP1103261P"
}

Pejovic, M. M., Pejović, S. M., Dolićanin, E. C.,& Lazarević, Đ. R.. (2011). Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides. in Nuclear technology and radiation protection, 26(3), 261-265.
https://doi.org/10.2298/NTRP1103261P

Pejovic MM, Pejović SM, Dolićanin EC, Lazarević ĐR. Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides. in Nuclear technology and radiation protection. 2011;26(3):261-265.
doi:10.2298/NTRP1103261P .

Pejovic, Momcilo M., Pejović, Svetlana M., Dolićanin, Edin C., Lazarević, Đorđe R., "Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides" in Nuclear technology and radiation protection, 26, no. 3 (2011):261-265,
https://doi.org/10.2298/NTRP1103261P . .