Ilić, Radovan D.

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  • Ilić, Radovan D. (1)
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Numerical analysis of the shielding energy dependence factor of the MOSFET dosimeter in electron-beams irradiation

Stanković, Srboljub; Ilić, Radovan D.; Nikolić, Dragana; Čekerevac, D.; Lončar, Boris; Živanović, Miloš

(University of Niš : Faculty of Electronic Engineering, 2012)

TY  - CONF
AU  - Stanković, Srboljub
AU  - Ilić, Radovan D.
AU  - Nikolić, Dragana
AU  - Čekerevac, D.
AU  - Lončar, Boris
AU  - Živanović, Miloš
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12149
AB  - In recent years, an increasing number of research works have been addressed to the study of the characteristics and applications of MOSFET detectors in the field of nuclear industry, medical applications and space research. At a time when the stormy development of technology, a new type of solid state dosimeter, the MOSFET detector, has been introduced into the radiotherapy, primarily for in vivo patient dosimetry in electron-beam irradiation. One of the major goals of our work was the presentation of the shielding energy dependence factor which assesses the impact of the lid with different shielding materials to MOSFET response for different energies of electron-beam irradiation into range 4 MeV – 20 MeV. In doing so, the established Monte Carlo numerical method for analysis influence of the packaging to energy dependence, carried out prior to any experimental testing. The bare MOSFET is encapsulated in epoxy glue which mechanically protects the chip. To trace the influence of the lid is the one intended by the physical protection, on the other hand, it can also be used for the protection against radiation, is introduced that defines the shielding energy dependence factor (SDEF) for different electron energies and for different constructional materials of lid. Factor SDEF is defined as the ratio of values of the absorbed dose, which in fact means that it is equal to the energy deposited when the MOSFET is shielded with protection, and the MOSFET without a lid. When we know the energy dependence factor for SDEF MOSFET with and without armor can be carried out and the analysis of whether and to what extent the energy required compensating the electronic components. In order to use the Monte Carlo numerical methods in this paper, the appropriate geometry form of the MOSFET dosimeter was defined using the adequate software. The electron transport Monte Carlo code FOTELP-2K10 has been adopted to analyze the influence of the MOSFET package on its energy response. FOTELP-2K10 code, uses RFG and PENGEOM6 software modules for dosimeter geometry description. Observations indicate that the MOSFET response is dependent on electron energy as well as varying with the package configuration. The packaging effect was investigated by comparising the total energy deposited in zones of the MOSFET structure. In this work presented, the ratio between values of total energy deposited in the sensitive volume (thick SiO2 layer) for cases of MOSFET structure with and without a package lid. For this purpose is defined the shielding energy dependence factor (SDEF), and is given its value for kovar and Ti-24Al-11Nb and Ti-13Nb-13Zr alloys as lid materials. Further, we have done the identification of the dependence of the total energy deposited with varying of photon energy, for all zones of interest with specially selected type of the MOSFET dosimeter.
PB  - University of Niš : Faculty of Electronic Engineering
C3  - RAD 2012 : 1st International Conference on Radiation in Various Fields of Research : Book of abstracts
T1  - Numerical analysis of the shielding energy dependence factor of the MOSFET dosimeter in electron-beams irradiation
SP  - 34
EP  - 34
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12149
ER  - 
@conference{
author = "Stanković, Srboljub and Ilić, Radovan D. and Nikolić, Dragana and Čekerevac, D. and Lončar, Boris and Živanović, Miloš",
year = "2012",
abstract = "In recent years, an increasing number of research works have been addressed to the study of the characteristics and applications of MOSFET detectors in the field of nuclear industry, medical applications and space research. At a time when the stormy development of technology, a new type of solid state dosimeter, the MOSFET detector, has been introduced into the radiotherapy, primarily for in vivo patient dosimetry in electron-beam irradiation. One of the major goals of our work was the presentation of the shielding energy dependence factor which assesses the impact of the lid with different shielding materials to MOSFET response for different energies of electron-beam irradiation into range 4 MeV – 20 MeV. In doing so, the established Monte Carlo numerical method for analysis influence of the packaging to energy dependence, carried out prior to any experimental testing. The bare MOSFET is encapsulated in epoxy glue which mechanically protects the chip. To trace the influence of the lid is the one intended by the physical protection, on the other hand, it can also be used for the protection against radiation, is introduced that defines the shielding energy dependence factor (SDEF) for different electron energies and for different constructional materials of lid. Factor SDEF is defined as the ratio of values of the absorbed dose, which in fact means that it is equal to the energy deposited when the MOSFET is shielded with protection, and the MOSFET without a lid. When we know the energy dependence factor for SDEF MOSFET with and without armor can be carried out and the analysis of whether and to what extent the energy required compensating the electronic components. In order to use the Monte Carlo numerical methods in this paper, the appropriate geometry form of the MOSFET dosimeter was defined using the adequate software. The electron transport Monte Carlo code FOTELP-2K10 has been adopted to analyze the influence of the MOSFET package on its energy response. FOTELP-2K10 code, uses RFG and PENGEOM6 software modules for dosimeter geometry description. Observations indicate that the MOSFET response is dependent on electron energy as well as varying with the package configuration. The packaging effect was investigated by comparising the total energy deposited in zones of the MOSFET structure. In this work presented, the ratio between values of total energy deposited in the sensitive volume (thick SiO2 layer) for cases of MOSFET structure with and without a package lid. For this purpose is defined the shielding energy dependence factor (SDEF), and is given its value for kovar and Ti-24Al-11Nb and Ti-13Nb-13Zr alloys as lid materials. Further, we have done the identification of the dependence of the total energy deposited with varying of photon energy, for all zones of interest with specially selected type of the MOSFET dosimeter.",
publisher = "University of Niš : Faculty of Electronic Engineering",
journal = "RAD 2012 : 1st International Conference on Radiation in Various Fields of Research : Book of abstracts",
title = "Numerical analysis of the shielding energy dependence factor of the MOSFET dosimeter in electron-beams irradiation",
pages = "34-34",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12149"
}
Stanković, S., Ilić, R. D., Nikolić, D., Čekerevac, D., Lončar, B.,& Živanović, M.. (2012). Numerical analysis of the shielding energy dependence factor of the MOSFET dosimeter in electron-beams irradiation. in RAD 2012 : 1st International Conference on Radiation in Various Fields of Research : Book of abstracts
University of Niš : Faculty of Electronic Engineering., 34-34.
https://hdl.handle.net/21.15107/rcub_vinar_12149
Stanković S, Ilić RD, Nikolić D, Čekerevac D, Lončar B, Živanović M. Numerical analysis of the shielding energy dependence factor of the MOSFET dosimeter in electron-beams irradiation. in RAD 2012 : 1st International Conference on Radiation in Various Fields of Research : Book of abstracts. 2012;:34-34.
https://hdl.handle.net/21.15107/rcub_vinar_12149 .
Stanković, Srboljub, Ilić, Radovan D., Nikolić, Dragana, Čekerevac, D., Lončar, Boris, Živanović, Miloš, "Numerical analysis of the shielding energy dependence factor of the MOSFET dosimeter in electron-beams irradiation" in RAD 2012 : 1st International Conference on Radiation in Various Fields of Research : Book of abstracts (2012):34-34,
https://hdl.handle.net/21.15107/rcub_vinar_12149 .