Davidović, Vojkan S.

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  • Davidović, Vojkan S. (3)
  • Davidović, Vojkan (1)
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Author's Bibliography

Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics

Spassov, Dencho; Paskaleva, Albena; Guziewicz, Elżbieta; Davidović, Vojkan; Stanković, Srboljub J.; Đorić-Veljković, Snežana; Ivanov, Tzvetan; Stanchev, Todor; Stojadinović, Ninoslav

(2021)

TY  - JOUR
AU  - Spassov, Dencho
AU  - Paskaleva, Albena
AU  - Guziewicz, Elżbieta
AU  - Davidović, Vojkan
AU  - Stanković, Srboljub J.
AU  - Đorić-Veljković, Snežana
AU  - Ivanov, Tzvetan
AU  - Stanchev, Todor
AU  - Stojadinović, Ninoslav
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9089
AB  - High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.
T2  - Materials
T1  - Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics
VL  - 14
IS  - 4
SP  - 849
DO  - 10.3390/ma14040849
ER  - 
@article{
author = "Spassov, Dencho and Paskaleva, Albena and Guziewicz, Elżbieta and Davidović, Vojkan and Stanković, Srboljub J. and Đorić-Veljković, Snežana and Ivanov, Tzvetan and Stanchev, Todor and Stojadinović, Ninoslav",
year = "2021",
url = "https://vinar.vin.bg.ac.rs/handle/123456789/9089",
abstract = "High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.",
journal = "Materials",
title = "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics",
volume = "14",
number = "4",
pages = "849",
doi = "10.3390/ma14040849"
}
Spassov, D., Paskaleva, A., Guziewicz, E., Davidović, V., Stanković, S. J., Đorić-Veljković, S., Ivanov, T., Stanchev, T.,& Stojadinović, N. (2021). Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics.
Materials, 14(4), 849.
https://doi.org/10.3390/ma14040849
Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković SJ, Đorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N. Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. Materials. 2021;14(4):849
Spassov Dencho, Paskaleva Albena, Guziewicz Elżbieta, Davidović Vojkan, Stanković Srboljub J., Đorić-Veljković Snežana, Ivanov Tzvetan, Stanchev Todor, Stojadinović Ninoslav, "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics" Materials, 14, no. 4 (2021):849,
https://doi.org/10.3390/ma14040849 .

Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry

Ilić, S.; Jevtić, A.; Stanković, Srboljub J.; Davidović, Vojkan S.

(IEEE, 2019)

TY  - CONF
AU  - Ilić, S.
AU  - Jevtić, A.
AU  - Stanković, Srboljub J.
AU  - Davidović, Vojkan S.
PY  - 2019
UR  - http://vinar.vin.bg.ac.rs/handle/123456789/8657
AB  - In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
T1  - Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry
SP  - 67
EP  - 70
DO  - 10.1109/MIEL.2019.8889570
ER  - 
@conference{
author = "Ilić, S. and Jevtić, A. and Stanković, Srboljub J. and Davidović, Vojkan S.",
year = "2019",
url = "http://vinar.vin.bg.ac.rs/handle/123456789/8657",
abstract = "In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings",
title = "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry",
pages = "67-70",
doi = "10.1109/MIEL.2019.8889570"
}
Ilić, S., Jevtić, A., Stanković, S. J.,& Davidović, V. S. (2019). Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry.
2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
IEEE., 67-70.
https://doi.org/10.1109/MIEL.2019.8889570
Ilić S, Jevtić A, Stanković SJ, Davidović VS. Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. 2019;:67-70
Ilić S., Jevtić A., Stanković Srboljub J., Davidović Vojkan S., "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry" 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings (2019):67-70,
https://doi.org/10.1109/MIEL.2019.8889570 .
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Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks

Spassov, Dentcho; Paskaleva, Albena; Davidović, Vojkan S.; Đorić-Veljković, Snežana M.; Stanković, Srboljub J.; Stojadinović, Ninoslav D.; Ivanov, Tzvetan E.; Stanchev, T.

(IEEE, 2019)

TY  - CONF
AU  - Spassov, Dentcho
AU  - Paskaleva, Albena
AU  - Davidović, Vojkan S.
AU  - Đorić-Veljković, Snežana M.
AU  - Stanković, Srboljub J.
AU  - Stojadinović, Ninoslav D.
AU  - Ivanov, Tzvetan E.
AU  - Stanchev, T.
PY  - 2019
UR  - https://ieeexplore.ieee.org/document/8889600/
UR  - http://vinar.vin.bg.ac.rs/handle/123456789/8658
AB  - The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics (MIEL)
T1  - Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks
SP  - 59
EP  - 62
DO  - 10.1109/MIEL.2019.8889600
ER  - 
@conference{
author = "Spassov, Dentcho and Paskaleva, Albena and Davidović, Vojkan S. and Đorić-Veljković, Snežana M. and Stanković, Srboljub J. and Stojadinović, Ninoslav D. and Ivanov, Tzvetan E. and Stanchev, T.",
year = "2019",
url = "https://ieeexplore.ieee.org/document/8889600/, http://vinar.vin.bg.ac.rs/handle/123456789/8658",
abstract = "The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics (MIEL)",
title = "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks",
pages = "59-62",
doi = "10.1109/MIEL.2019.8889600"
}
Spassov, D., Paskaleva, A., Davidović, V. S., Đorić-Veljković, S. M., Stanković, S. J., Stojadinović, N. D., Ivanov, T. E.,& Stanchev, T. (2019). Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks.
2019 IEEE 31st International Conference on Microelectronics (MIEL)
IEEE., 59-62.
https://doi.org/10.1109/MIEL.2019.8889600
Spassov D, Paskaleva A, Davidović VS, Đorić-Veljković SM, Stanković SJ, Stojadinović ND, Ivanov TE, Stanchev T. Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. 2019 IEEE 31st International Conference on Microelectronics (MIEL). 2019;:59-62
Spassov Dentcho, Paskaleva Albena, Davidović Vojkan S., Đorić-Veljković Snežana M., Stanković Srboljub J., Stojadinović Ninoslav D., Ivanov Tzvetan E., Stanchev T., "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks" 2019 IEEE 31st International Conference on Microelectronics (MIEL) (2019):59-62,
https://doi.org/10.1109/MIEL.2019.8889600 .

Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation

Stanković, Srboljub J.; Nikolić, Dragana; Kržanović, Nikola; Nađđerđ, Laslo; Davidović, Vojkan S.

(IEEE, 2019)

TY  - CONF
AU  - Stanković, Srboljub J.
AU  - Nikolić, Dragana
AU  - Kržanović, Nikola
AU  - Nađđerđ, Laslo
AU  - Davidović, Vojkan S.
PY  - 2019
UR  - https://ieeexplore.ieee.org/document/8889613/
UR  - http://vinar.vin.bg.ac.rs/handle/123456789/8659
AB  - The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics (MIEL)
T1  - Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation
SP  - 181
EP  - 184
DO  - 10.1109/MIEL.2019.8889613
ER  - 
@conference{
author = "Stanković, Srboljub J. and Nikolić, Dragana and Kržanović, Nikola and Nađđerđ, Laslo and Davidović, Vojkan S.",
year = "2019",
url = "https://ieeexplore.ieee.org/document/8889613/, http://vinar.vin.bg.ac.rs/handle/123456789/8659",
abstract = "The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics (MIEL)",
title = "Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation",
pages = "181-184",
doi = "10.1109/MIEL.2019.8889613"
}
Stanković, S. J., Nikolić, D., Kržanović, N., Nađđerđ, L.,& Davidović, V. S. (2019). Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation.
2019 IEEE 31st International Conference on Microelectronics (MIEL)
IEEE., 181-184.
https://doi.org/10.1109/MIEL.2019.8889613
Stanković SJ, Nikolić D, Kržanović N, Nađđerđ L, Davidović VS. Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation. 2019 IEEE 31st International Conference on Microelectronics (MIEL). 2019;:181-184
Stanković Srboljub J., Nikolić Dragana, Kržanović Nikola, Nađđerđ Laslo, Davidović Vojkan S., "Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation" 2019 IEEE 31st International Conference on Microelectronics (MIEL) (2019):181-184,
https://doi.org/10.1109/MIEL.2019.8889613 .
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