TY  - CONF
AU  - Bibić, Nataša
AU  - Milosavljević, M.
AU  - Milinović, Velimir
AU  - Šiljegović, M.
AU  - Peruško, Davor
AU  - Schaaf, P.
AU  - Lieb, K. P.
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12893
AB  - In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.
C3  - SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers
T1  - Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers
SP  - 73
EP  - 73
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12893
ER  - 

@conference{
author = "Bibić, Nataša and Milosavljević, M. and Milinović, Velimir and Šiljegović, M. and Peruško, Davor and Schaaf, P. and Lieb, K. P.",
year = "2004",
abstract = "In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.",
journal = "SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers",
title = "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers",
pages = "73-73",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12893"
}

Bibić, N., Milosavljević, M., Milinović, V., Šiljegović, M., Peruško, D., Schaaf, P.,& Lieb, K. P.. (2004). Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers, 73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893

Bibić N, Milosavljević M, Milinović V, Šiljegović M, Peruško D, Schaaf P, Lieb KP. Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers. 2004;:73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893 .

Bibić, Nataša, Milosavljević, M., Milinović, Velimir, Šiljegović, M., Peruško, Davor, Schaaf, P., Lieb, K. P., "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers" in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers (2004):73-73,
https://hdl.handle.net/21.15107/rcub_vinar_12893 .