TY  - CONF
AU  - Stepanović, O.
AU  - Popović, M.
AU  - Novaković, Miroslav M.
AU  - Nenadović, Miloš
AU  - Potočnik, Jelena
AU  - Rakočević, Zlatko Lj.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10877
AB  - In this paper we report a study on the effects of implanted In+ ions into GaAs and Si - semiconductors with direct and indirect band gap, respectively. Both systems, (In,Ga)As and (In)Si, are of great interest for fundamental investigations of their structures as well as for the development of technological applications with enhanced electronic and optical properties. In+ ions were implanted into n-type GaAs (100) and n-type Si (100) at acceleration energy of 60 keV and the fluences of 1×1014 ion/cm2, 5×1014 ion/cm2, 1×1015 ion/cm2 and 2×1015ion/cm2.It is well known that after ion implantation process substrate crystal structure is quite damaged due to the formation of point defects and dislocations which can strongly influence the semiconducting properties. In order to remove structural damage, after implantation all samples were annealed by rapid thermal annealing at temperatures 900oC1000oC. As-implanted and annealed samples were characterized for the structural changes and results are presented together with optical and sheet resistance measurements. Change in crystallinity of the samples was monitored by transmission electron microscopy, while chemical composition was determined by energy dispersive X-ray spectroscopy. Spectroscopic ellipsometry in the wavelength range 260 nm-2066 nm was performed in order to determine optical parameters and change in energy band gap. Atomic force microscopy was used to determine changes in surface roughness. Damage introduction during ion irradiation and its removal during a thermal annealing are key issues which are highlighted.
PB  - Belgrade : Serbian Ceramic Society
C3  - Advanced Ceramics and Application : 8th Serbian Ceramic Society Conference : program and the book of abstracts; September 23-25, 2019; Belgrade
T1  - Indium ion implantation effects on the structural, optical and electrical properties of GaAs and Si wafers
SP  - 50
UR  - https://hdl.handle.net/21.15107/rcub_vinar_10877
ER  - 

@conference{
author = "Stepanović, O. and Popović, M. and Novaković, Miroslav M. and Nenadović, Miloš and Potočnik, Jelena and Rakočević, Zlatko Lj.",
year = "2019",
abstract = "In this paper we report a study on the effects of implanted In+ ions into GaAs and Si - semiconductors with direct and indirect band gap, respectively. Both systems, (In,Ga)As and (In)Si, are of great interest for fundamental investigations of their structures as well as for the development of technological applications with enhanced electronic and optical properties. In+ ions were implanted into n-type GaAs (100) and n-type Si (100) at acceleration energy of 60 keV and the fluences of 1×1014 ion/cm2, 5×1014 ion/cm2, 1×1015 ion/cm2 and 2×1015ion/cm2.It is well known that after ion implantation process substrate crystal structure is quite damaged due to the formation of point defects and dislocations which can strongly influence the semiconducting properties. In order to remove structural damage, after implantation all samples were annealed by rapid thermal annealing at temperatures 900oC1000oC. As-implanted and annealed samples were characterized for the structural changes and results are presented together with optical and sheet resistance measurements. Change in crystallinity of the samples was monitored by transmission electron microscopy, while chemical composition was determined by energy dispersive X-ray spectroscopy. Spectroscopic ellipsometry in the wavelength range 260 nm-2066 nm was performed in order to determine optical parameters and change in energy band gap. Atomic force microscopy was used to determine changes in surface roughness. Damage introduction during ion irradiation and its removal during a thermal annealing are key issues which are highlighted.",
publisher = "Belgrade : Serbian Ceramic Society",
journal = "Advanced Ceramics and Application : 8th Serbian Ceramic Society Conference : program and the book of abstracts; September 23-25, 2019; Belgrade",
title = "Indium ion implantation effects on the structural, optical and electrical properties of GaAs and Si wafers",
pages = "50",
url = "https://hdl.handle.net/21.15107/rcub_vinar_10877"
}

Stepanović, O., Popović, M., Novaković, M. M., Nenadović, M., Potočnik, J.,& Rakočević, Z. Lj.. (2019). Indium ion implantation effects on the structural, optical and electrical properties of GaAs and Si wafers. in Advanced Ceramics and Application : 8th Serbian Ceramic Society Conference : program and the book of abstracts; September 23-25, 2019; Belgrade
Belgrade : Serbian Ceramic Society., 50.
https://hdl.handle.net/21.15107/rcub_vinar_10877

Stepanović O, Popović M, Novaković MM, Nenadović M, Potočnik J, Rakočević ZL. Indium ion implantation effects on the structural, optical and electrical properties of GaAs and Si wafers. in Advanced Ceramics and Application : 8th Serbian Ceramic Society Conference : program and the book of abstracts; September 23-25, 2019; Belgrade. 2019;:50.
https://hdl.handle.net/21.15107/rcub_vinar_10877 .

Stepanović, O., Popović, M., Novaković, Miroslav M., Nenadović, Miloš, Potočnik, Jelena, Rakočević, Zlatko Lj., "Indium ion implantation effects on the structural, optical and electrical properties of GaAs and Si wafers" in Advanced Ceramics and Application : 8th Serbian Ceramic Society Conference : program and the book of abstracts; September 23-25, 2019; Belgrade (2019):50,
https://hdl.handle.net/21.15107/rcub_vinar_10877 .