TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Živanović, E.
AU  - Stanković, Srboljub
AU  - Anđelković, M.
AU  - Ristić, G.
AU  - Paskleva, A.
AU  - Spassov, D.
AU  - Danković, Danijel
AU  - Manić, I.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12120
AB  - This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 33rd International Conference on Microelectronics : Proceedings book
T1  - Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation
SP  - 277
EP  - 280
DO  - 10.1109/MIEL58498.2023.10315932
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Živanović, E. and Stanković, Srboljub and Anđelković, M. and Ristić, G. and Paskleva, A. and Spassov, D. and Danković, Danijel and Manić, I.",
year = "2023",
abstract = "This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 33rd International Conference on Microelectronics : Proceedings book",
title = "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation",
pages = "277-280",
doi = "10.1109/MIEL58498.2023.10315932"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Živanović, E., Stanković, S., Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, D.,& Manić, I.. (2023). Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 277-280.
https://doi.org/10.1109/MIEL58498.2023.10315932

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Živanović E, Stanković S, Anđelković M, Ristić G, Paskleva A, Spassov D, Danković D, Manić I. Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book. 2023;:277-280.
doi:10.1109/MIEL58498.2023.10315932 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Živanović, E., Stanković, Srboljub, Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, Danijel, Manić, I., "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation" in MIEL : 33rd International Conference on Microelectronics : Proceedings book (2023):277-280,
https://doi.org/10.1109/MIEL58498.2023.10315932 . .

TY  - JOUR
AU  - Ristić, Goran S.
AU  - Ilić, Stefan
AU  - Veljković, Sandra
AU  - Jevtić, Aleksandar S.
AU  - Dimitrijević, Strahinja
AU  - Palma, Alberto J.
AU  - Stanković, Srboljub
AU  - Anđelković, Marko S.
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10240
AB  - The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.
T2  - Electronics
T1  - Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
VL  - 11
IS  - 6
SP  - 918
DO  - 10.3390/electronics11060918
ER  - 

@article{
author = "Ristić, Goran S. and Ilić, Stefan and Veljković, Sandra and Jevtić, Aleksandar S. and Dimitrijević, Strahinja and Palma, Alberto J. and Stanković, Srboljub and Anđelković, Marko S.",
year = "2022",
abstract = "The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.",
journal = "Electronics",
title = "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter",
volume = "11",
number = "6",
pages = "918",
doi = "10.3390/electronics11060918"
}

Ristić, G. S., Ilić, S., Veljković, S., Jevtić, A. S., Dimitrijević, S., Palma, A. J., Stanković, S.,& Anđelković, M. S.. (2022). Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics, 11(6), 918.
https://doi.org/10.3390/electronics11060918

Ristić GS, Ilić S, Veljković S, Jevtić AS, Dimitrijević S, Palma AJ, Stanković S, Anđelković MS. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics. 2022;11(6):918.
doi:10.3390/electronics11060918 .

Ristić, Goran S., Ilić, Stefan, Veljković, Sandra, Jevtić, Aleksandar S., Dimitrijević, Strahinja, Palma, Alberto J., Stanković, Srboljub, Anđelković, Marko S., "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter" in Electronics, 11, no. 6 (2022):918,
https://doi.org/10.3390/electronics11060918 . .

TY  - JOUR
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Davidović, Vojkan
AU  - Golubović, Snežana
AU  - Djorić-Veljković, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dencho
AU  - Stanković, Srboljub
AU  - Andjelković, Marko
AU  - Prijić, Zoran
AU  - Manić, Ivica
AU  - Prijić, Aneta
AU  - Ristić, Goran
AU  - Danković, Danijel
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12130
AB  - n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress
T2  - Journal of Circuits, Systems and Computers
T1  - Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress
VL  - 31
IS  - 18
SP  - 2240003
DO  - 10.1142/S0218126622400035
ER  - 

@article{
author = "Veljković, Sandra and Mitrović, Nikola and Davidović, Vojkan and Golubović, Snežana and Djorić-Veljković, Snežana and Paskaleva, Albena and Spassov, Dencho and Stanković, Srboljub and Andjelković, Marko and Prijić, Zoran and Manić, Ivica and Prijić, Aneta and Ristić, Goran and Danković, Danijel",
year = "2022",
abstract = "n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress",
journal = "Journal of Circuits, Systems and Computers",
title = "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress",
volume = "31",
number = "18",
pages = "2240003",
doi = "10.1142/S0218126622400035"
}

Veljković, S., Mitrović, N., Davidović, V., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stanković, S., Andjelković, M., Prijić, Z., Manić, I., Prijić, A., Ristić, G.,& Danković, D.. (2022). Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers, 31(18), 2240003.
https://doi.org/10.1142/S0218126622400035

Veljković S, Mitrović N, Davidović V, Golubović S, Djorić-Veljković S, Paskaleva A, Spassov D, Stanković S, Andjelković M, Prijić Z, Manić I, Prijić A, Ristić G, Danković D. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers. 2022;31(18):2240003.
doi:10.1142/S0218126622400035 .

Veljković, Sandra, Mitrović, Nikola, Davidović, Vojkan, Golubović, Snežana, Djorić-Veljković, Snežana, Paskaleva, Albena, Spassov, Dencho, Stanković, Srboljub, Andjelković, Marko, Prijić, Zoran, Manić, Ivica, Prijić, Aneta, Ristić, Goran, Danković, Danijel, "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress" in Journal of Circuits, Systems and Computers, 31, no. 18 (2022):2240003,
https://doi.org/10.1142/S0218126622400035 . .

TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Manić, Ivica
AU  - Golubović, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dentcho
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stanković, Srboljub
AU  - Danković, Danijel
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12119
AB  - The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 32nd International Conference on Microelectronics : Proceedings book
T1  - Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors
SP  - 345
EP  - 350
DO  - 10.1109/MIEL52794.2021.9569154
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Manić, Ivica and Golubović, Snežana and Paskaleva, Albena and Spassov, Dentcho and Prijić, Zoran and Prijić, Aneta and Stanković, Srboljub and Danković, Danijel",
year = "2021",
abstract = "The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 32nd International Conference on Microelectronics : Proceedings book",
title = "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors",
pages = "345-350",
doi = "10.1109/MIEL52794.2021.9569154"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Manić, I., Golubović, S., Paskaleva, A., Spassov, D., Prijić, Z., Prijić, A., Stanković, S.,& Danković, D.. (2021). Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 345-350.
https://doi.org/10.1109/MIEL52794.2021.9569154

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Manić I, Golubović S, Paskaleva A, Spassov D, Prijić Z, Prijić A, Stanković S, Danković D. Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book. 2021;:345-350.
doi:10.1109/MIEL52794.2021.9569154 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Manić, Ivica, Golubović, Snežana, Paskaleva, Albena, Spassov, Dentcho, Prijić, Zoran, Prijić, Aneta, Stanković, Srboljub, Danković, Danijel, "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors" in MIEL : 32nd International Conference on Microelectronics : Proceedings book (2021):345-350,
https://doi.org/10.1109/MIEL52794.2021.9569154 . .