TY  - CONF
AU  - Erich, Marko
AU  - Gloginjić, Marko
AU  - Mravik, Željko
AU  - Vrban, Branislav
AU  - Čerba, Štefan
AU  - Lüley, Jakub
AU  - Nečas, Vladimír
AU  - Filová, Vendula
AU  - Katovský, Karel
AU  - Štastný, Ondrej
AU  - Petrović, Srđan M.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11068
AB  - 6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.
C3  - 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic
T1  - Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence
VL  - 2778
IS  - 1
SP  - 060002
DO  - 10.1063/5.0136670
ER  - 

@conference{
author = "Erich, Marko and Gloginjić, Marko and Mravik, Željko and Vrban, Branislav and Čerba, Štefan and Lüley, Jakub and Nečas, Vladimír and Filová, Vendula and Katovský, Karel and Štastný, Ondrej and Petrović, Srđan M.",
year = "2023",
abstract = "6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.",
journal = "27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic",
title = "Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence",
volume = "2778",
number = "1",
pages = "060002",
doi = "10.1063/5.0136670"
}

Erich, M., Gloginjić, M., Mravik, Ž., Vrban, B., Čerba, Š., Lüley, J., Nečas, V., Filová, V., Katovský, K., Štastný, O.,& Petrović, S. M.. (2023). Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778(1), 060002.
https://doi.org/10.1063/5.0136670

Erich M, Gloginjić M, Mravik Ž, Vrban B, Čerba Š, Lüley J, Nečas V, Filová V, Katovský K, Štastný O, Petrović SM. Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic. 2023;2778(1):060002.
doi:10.1063/5.0136670 .

Erich, Marko, Gloginjić, Marko, Mravik, Željko, Vrban, Branislav, Čerba, Štefan, Lüley, Jakub, Nečas, Vladimír, Filová, Vendula, Katovský, Karel, Štastný, Ondrej, Petrović, Srđan M., "Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence" in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778, no. 1 (2023):060002,
https://doi.org/10.1063/5.0136670 . .

TY  - CONF
AU  - Čerba, Štefan
AU  - Vrban, Branislav
AU  - Lüley, Jakub
AU  - Filová, Vendula
AU  - Nečas, Vladimír
AU  - Štastný, Ondrej
AU  - Katovský, Karel
AU  - Mravik, Željko
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Gloginjić, Marko
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11069
AB  - The Mini Labyrinth experiment is a simple neutron and gamma shielding experiment developed at Slovak University of Technology (STU), inspired by the ALARM-CF-AIR-LAB-001 ICSBEP benchmark. Compared to the original Labyrinth, which was made from concrete blocks and had dimension of several meters, the STU Mini Labyrinth is approximately ten times smaller and consists of NEUTRONSTOP shielding blocks. So far, several versions and modifications of the Mini Labyrinth have been investigated, currently the V2-25-L version is used for code evaluation. This version uses a PuBe neutron source loaded in the entrance of the Mini Labyrinth, a plastic tank filled with light water moderator and the NuDET plastic scintillation neutron detector, which can be placed around the experimental workplace. This detector has a significant role in the experiment since it is a calibration apparatus and provides real time data on the rates of ambient dose equivalents of neutron radiation. On the other hand, as it is a certified commercial product, the response function of this detector is unknow, which makes a significant challenge of verifying the measured data with computer codes. This paper presents a result of a series of measurements with the NuDET detector performed at STU and discusses the options, how to verify the experimental results by the SCALE6 system in the most effective way.
C3  - 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic
T1  - Evaluation of the responses of the NuDET neutron detector in the Mini Labyrinth experiment
VL  - 2778
IS  - 1
SP  - 050002
DO  - 10.1063/5.0135854
ER  - 

@conference{
author = "Čerba, Štefan and Vrban, Branislav and Lüley, Jakub and Filová, Vendula and Nečas, Vladimír and Štastný, Ondrej and Katovský, Karel and Mravik, Željko and Erich, Marko and Petrović, Srđan M. and Gloginjić, Marko",
year = "2023",
abstract = "The Mini Labyrinth experiment is a simple neutron and gamma shielding experiment developed at Slovak University of Technology (STU), inspired by the ALARM-CF-AIR-LAB-001 ICSBEP benchmark. Compared to the original Labyrinth, which was made from concrete blocks and had dimension of several meters, the STU Mini Labyrinth is approximately ten times smaller and consists of NEUTRONSTOP shielding blocks. So far, several versions and modifications of the Mini Labyrinth have been investigated, currently the V2-25-L version is used for code evaluation. This version uses a PuBe neutron source loaded in the entrance of the Mini Labyrinth, a plastic tank filled with light water moderator and the NuDET plastic scintillation neutron detector, which can be placed around the experimental workplace. This detector has a significant role in the experiment since it is a calibration apparatus and provides real time data on the rates of ambient dose equivalents of neutron radiation. On the other hand, as it is a certified commercial product, the response function of this detector is unknow, which makes a significant challenge of verifying the measured data with computer codes. This paper presents a result of a series of measurements with the NuDET detector performed at STU and discusses the options, how to verify the experimental results by the SCALE6 system in the most effective way.",
journal = "27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic",
title = "Evaluation of the responses of the NuDET neutron detector in the Mini Labyrinth experiment",
volume = "2778",
number = "1",
pages = "050002",
doi = "10.1063/5.0135854"
}

Čerba, Š., Vrban, B., Lüley, J., Filová, V., Nečas, V., Štastný, O., Katovský, K., Mravik, Ž., Erich, M., Petrović, S. M.,& Gloginjić, M.. (2023). Evaluation of the responses of the NuDET neutron detector in the Mini Labyrinth experiment. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778(1), 050002.
https://doi.org/10.1063/5.0135854

Čerba Š, Vrban B, Lüley J, Filová V, Nečas V, Štastný O, Katovský K, Mravik Ž, Erich M, Petrović SM, Gloginjić M. Evaluation of the responses of the NuDET neutron detector in the Mini Labyrinth experiment. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic. 2023;2778(1):050002.
doi:10.1063/5.0135854 .

Čerba, Štefan, Vrban, Branislav, Lüley, Jakub, Filová, Vendula, Nečas, Vladimír, Štastný, Ondrej, Katovský, Karel, Mravik, Željko, Erich, Marko, Petrović, Srđan M., Gloginjić, Marko, "Evaluation of the responses of the NuDET neutron detector in the Mini Labyrinth experiment" in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778, no. 1 (2023):050002,
https://doi.org/10.1063/5.0135854 . .

TY  - CONF
AU  - Burian, Jiri
AU  - Čerba, Štefan
AU  - Erich, Marko
AU  - Filova, Vendula
AU  - Gloginjić, Marko
AU  - Katovsky, Karel
AU  - Kral, Dušan
AU  - Luley, Jakub
AU  - Mravik, Željko
AU  - Petrović, Srđan M.
AU  - Št'Astný, Ondřej
AU  - Vrban, Branislav
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11072
AB  - To extend the research possibilities of the nuclear research group at Brno University of Technology, a gamma radiation shielding measurement benchmark assembly was designed and built. Experimental device will be used for fine attenuation coefficient and build-up factors measurement and for easy validation of theoretical simulation and calculation of shielding properties of selected materials. Many different radioactive emitters can be used in the assembly, as well as many different detectors and materials, which might be tested, and results compared to understand well measurement results. A theoretical model was also created for the benchmark assembly and simulated in MCNP. Initial results show identical trends of values obtained by simulation and practical experiment.
C3  - 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic
T1  - Theoretical simulation and experimental testing of advanced shielding materials properties with focus on inhomogeneity and build-up
VL  - 2778
IS  - 1
SP  - 050001
DO  - 10.1063/5.0136138
ER  - 

@conference{
author = "Burian, Jiri and Čerba, Štefan and Erich, Marko and Filova, Vendula and Gloginjić, Marko and Katovsky, Karel and Kral, Dušan and Luley, Jakub and Mravik, Željko and Petrović, Srđan M. and Št'Astný, Ondřej and Vrban, Branislav",
year = "2023",
abstract = "To extend the research possibilities of the nuclear research group at Brno University of Technology, a gamma radiation shielding measurement benchmark assembly was designed and built. Experimental device will be used for fine attenuation coefficient and build-up factors measurement and for easy validation of theoretical simulation and calculation of shielding properties of selected materials. Many different radioactive emitters can be used in the assembly, as well as many different detectors and materials, which might be tested, and results compared to understand well measurement results. A theoretical model was also created for the benchmark assembly and simulated in MCNP. Initial results show identical trends of values obtained by simulation and practical experiment.",
journal = "27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic",
title = "Theoretical simulation and experimental testing of advanced shielding materials properties with focus on inhomogeneity and build-up",
volume = "2778",
number = "1",
pages = "050001",
doi = "10.1063/5.0136138"
}

Burian, J., Čerba, Š., Erich, M., Filova, V., Gloginjić, M., Katovsky, K., Kral, D., Luley, J., Mravik, Ž., Petrović, S. M., Št'Astný, O.,& Vrban, B.. (2023). Theoretical simulation and experimental testing of advanced shielding materials properties with focus on inhomogeneity and build-up. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778(1), 050001.
https://doi.org/10.1063/5.0136138

Burian J, Čerba Š, Erich M, Filova V, Gloginjić M, Katovsky K, Kral D, Luley J, Mravik Ž, Petrović SM, Št'Astný O, Vrban B. Theoretical simulation and experimental testing of advanced shielding materials properties with focus on inhomogeneity and build-up. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic. 2023;2778(1):050001.
doi:10.1063/5.0136138 .

Burian, Jiri, Čerba, Štefan, Erich, Marko, Filova, Vendula, Gloginjić, Marko, Katovsky, Karel, Kral, Dušan, Luley, Jakub, Mravik, Željko, Petrović, Srđan M., Št'Astný, Ondřej, Vrban, Branislav, "Theoretical simulation and experimental testing of advanced shielding materials properties with focus on inhomogeneity and build-up" in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778, no. 1 (2023):050001,
https://doi.org/10.1063/5.0136138 . .

TY  - CONF
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Skuratov, Vladimir A.
AU  - Kirilkin, Nikita S.
AU  - Kokkoris, Mike
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Petrović, Srđan M.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11071
AB  - Magnesium fluoride (MgF2) single crystal has been widely used as a material for application in optics due to its excellent properties like birefringence, wide range of transparency and low refractive index. As such, MgF2 has been proposed for planar waveguide structures. Ion implantation method was frequently used for planar waveguide production due to its ability to modulate optical properties by introduction of impurities and defects in crystal lattice. In all optics fabrication processes, there are demands for a precise control of optical characteristics modulation and hence the need for precise distribution of implanted impurities and induced damage. In this study, 4 MeV C3+ ions with the fluence of 5×1015 ions/cm2 were implanted in (001) axial direction of MgF2 single crystal. In order to determine the damage depth distribution in the crystal sample, photoluminescence (PL) spectroscopy was proposed as a method of evaluation. PL spectroscopy was used as a convenient method for damage investigation of transparent and semi-transparent samples. The cross-section of the implanted zone was mapped with the step of 0.34 µm and the variations in the spectra were investigated. It was shown that intensity evolution of two prominent wide bands with the intensity maximums at about 590 nm and 733 nm can be used for damage depth distribution estimation. Comparing the relative changes of derivatives of the band’s intensities, data related to the damage depth distribution were obtained. Obtained distribution was compared with the SRIM calculation of displacement damage. Considering the difference in implantation direction, good agreement with SRIM results was obtained. As a consequence of ion channeling, it was shown that damage distribution is extended deeper (for about 20%).
C3  - 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic
T1  - Ion channeling implantation induced MgF2 crystal damage through the “eye” of photoluminescence spectroscopy
VL  - 2778
IS  - 1
SP  - 040007
DO  - 10.1063/5.0135868
ER  - 

@conference{
author = "Gloginjić, Marko and Erich, Marko and Skuratov, Vladimir A. and Kirilkin, Nikita S. and Kokkoris, Mike and Fazinić, Stjepko and Karlušić, Marko and Petrović, Srđan M.",
year = "2023",
abstract = "Magnesium fluoride (MgF2) single crystal has been widely used as a material for application in optics due to its excellent properties like birefringence, wide range of transparency and low refractive index. As such, MgF2 has been proposed for planar waveguide structures. Ion implantation method was frequently used for planar waveguide production due to its ability to modulate optical properties by introduction of impurities and defects in crystal lattice. In all optics fabrication processes, there are demands for a precise control of optical characteristics modulation and hence the need for precise distribution of implanted impurities and induced damage. In this study, 4 MeV C3+ ions with the fluence of 5×1015 ions/cm2 were implanted in (001) axial direction of MgF2 single crystal. In order to determine the damage depth distribution in the crystal sample, photoluminescence (PL) spectroscopy was proposed as a method of evaluation. PL spectroscopy was used as a convenient method for damage investigation of transparent and semi-transparent samples. The cross-section of the implanted zone was mapped with the step of 0.34 µm and the variations in the spectra were investigated. It was shown that intensity evolution of two prominent wide bands with the intensity maximums at about 590 nm and 733 nm can be used for damage depth distribution estimation. Comparing the relative changes of derivatives of the band’s intensities, data related to the damage depth distribution were obtained. Obtained distribution was compared with the SRIM calculation of displacement damage. Considering the difference in implantation direction, good agreement with SRIM results was obtained. As a consequence of ion channeling, it was shown that damage distribution is extended deeper (for about 20%).",
journal = "27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic",
title = "Ion channeling implantation induced MgF2 crystal damage through the “eye” of photoluminescence spectroscopy",
volume = "2778",
number = "1",
pages = "040007",
doi = "10.1063/5.0135868"
}

Gloginjić, M., Erich, M., Skuratov, V. A., Kirilkin, N. S., Kokkoris, M., Fazinić, S., Karlušić, M.,& Petrović, S. M.. (2023). Ion channeling implantation induced MgF2 crystal damage through the “eye” of photoluminescence spectroscopy. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778(1), 040007.
https://doi.org/10.1063/5.0135868

Gloginjić M, Erich M, Skuratov VA, Kirilkin NS, Kokkoris M, Fazinić S, Karlušić M, Petrović SM. Ion channeling implantation induced MgF2 crystal damage through the “eye” of photoluminescence spectroscopy. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic. 2023;2778(1):040007.
doi:10.1063/5.0135868 .

Gloginjić, Marko, Erich, Marko, Skuratov, Vladimir A., Kirilkin, Nikita S., Kokkoris, Mike, Fazinić, Stjepko, Karlušić, Marko, Petrović, Srđan M., "Ion channeling implantation induced MgF2 crystal damage through the “eye” of photoluminescence spectroscopy" in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778, no. 1 (2023):040007,
https://doi.org/10.1063/5.0135868 . .

TY  - JOUR
AU  - Čerba, Štefan
AU  - Vrban, Branislav
AU  - Lüley, Jakub
AU  - Nečas, Vladimír
AU  - Štastný, Ondřej
AU  - Filova, Vendula
AU  - Katovský, Karel
AU  - Gloginić, Marko
AU  - Mravik, Željko
AU  - Erich, Marko
AU  - Petrović, Srđan M.
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10403
AB  - One of the most effective ways of gaining user experience and minimizing user effects on modelling and simulation is benchmarking. Currently (2022) a new experimental workplace, the so called 'Mini Labyrinth' is being developed at Slovak University of Technology in Bratislava (STU). It is a simple neutron and gamma shielding benchmark, inspired by the ALARM-CF-AIR-LAB-001 ICSBEP experiment. The latest V2 setup consists of a PuBe neutron source, several NEUTRONSTOP C5 shielding blocks, H2O filled polylactic acid (PLA) tank, plastic source holder and detectors placed inside and outside the Mini Labyrinth. This paper is focused on the monitoring of the radiation doses around the workplace using the NuDET neutron detector and on the comparison of the measured quantities with ones simulated by SCALE 6 MONACO. The influence of the size of the model and the definition of the detector is studied in this analysis. The achieved results are presented and some discussions on further needed development are also included.
T2  - Radiation Protection Dosimetry
T1  - Measurement and simulation of the radiation doses around the 'mini labyrinth' experimental workplace at stu
VL  - 198
IS  - 9-11
SP  - 628
EP  - 633
DO  - 10.1093/rpd/ncac109
ER  - 

@article{
author = "Čerba, Štefan and Vrban, Branislav and Lüley, Jakub and Nečas, Vladimír and Štastný, Ondřej and Filova, Vendula and Katovský, Karel and Gloginić, Marko and Mravik, Željko and Erich, Marko and Petrović, Srđan M.",
year = "2022",
abstract = "One of the most effective ways of gaining user experience and minimizing user effects on modelling and simulation is benchmarking. Currently (2022) a new experimental workplace, the so called 'Mini Labyrinth' is being developed at Slovak University of Technology in Bratislava (STU). It is a simple neutron and gamma shielding benchmark, inspired by the ALARM-CF-AIR-LAB-001 ICSBEP experiment. The latest V2 setup consists of a PuBe neutron source, several NEUTRONSTOP C5 shielding blocks, H2O filled polylactic acid (PLA) tank, plastic source holder and detectors placed inside and outside the Mini Labyrinth. This paper is focused on the monitoring of the radiation doses around the workplace using the NuDET neutron detector and on the comparison of the measured quantities with ones simulated by SCALE 6 MONACO. The influence of the size of the model and the definition of the detector is studied in this analysis. The achieved results are presented and some discussions on further needed development are also included.",
journal = "Radiation Protection Dosimetry",
title = "Measurement and simulation of the radiation doses around the 'mini labyrinth' experimental workplace at stu",
volume = "198",
number = "9-11",
pages = "628-633",
doi = "10.1093/rpd/ncac109"
}

Čerba, Š., Vrban, B., Lüley, J., Nečas, V., Štastný, O., Filova, V., Katovský, K., Gloginić, M., Mravik, Ž., Erich, M.,& Petrović, S. M.. (2022). Measurement and simulation of the radiation doses around the 'mini labyrinth' experimental workplace at stu. in Radiation Protection Dosimetry, 198(9-11), 628-633.
https://doi.org/10.1093/rpd/ncac109

Čerba Š, Vrban B, Lüley J, Nečas V, Štastný O, Filova V, Katovský K, Gloginić M, Mravik Ž, Erich M, Petrović SM. Measurement and simulation of the radiation doses around the 'mini labyrinth' experimental workplace at stu. in Radiation Protection Dosimetry. 2022;198(9-11):628-633.
doi:10.1093/rpd/ncac109 .

Čerba, Štefan, Vrban, Branislav, Lüley, Jakub, Nečas, Vladimír, Štastný, Ondřej, Filova, Vendula, Katovský, Karel, Gloginić, Marko, Mravik, Željko, Erich, Marko, Petrović, Srđan M., "Measurement and simulation of the radiation doses around the 'mini labyrinth' experimental workplace at stu" in Radiation Protection Dosimetry, 198, no. 9-11 (2022):628-633,
https://doi.org/10.1093/rpd/ncac109 . .

TY  - JOUR
AU  - Vrban, Branislav
AU  - Čerba, Štefan
AU  - Lüley, Jakub
AU  - Nečas, Vladimír
AU  - Filova, Vendula
AU  - Katovský, Karel
AU  - Štastný, Ondrej
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Mravik, Željko
AU  - Petrović, Srdjan
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10498
AB  - The Mini Labyrinth experiment is a neutron and gamma shielding experiment currently being developed at the Slovak University of Technology, Bratislava (STU). The STU Mini Labyrinth consists of NEUTRONSTOP shielding blocks, water tank, PuBe neutron source, and graphite prism. This article describes the second construction version of the Mini Labyrinth experiment and presents the newest results of the neutron and gamma fields’ simulation and measurement. The PuBe neutron source with the emission rate of 1.06E7 $\textn\cdot \texts^-1$ was used in the experiment. The measurement of gamma ambient dose equivalent H*(10) and neutron count rates is performed by the Thermo Scientific RadEye portable survey meter and the SNM-11 BF3-filled corona detector. The simulation part was carried out using the state-of-the-art MCNP6 and SCALE6 MONACO stochastic calculation tools, considering the detailed geometry of the Mini Labyrinth and a combined neutron and gamma source of particles. The comparisons were performed between codes and the experiment. The propagation of cross-sectional uncertainties was investigated through the shielding analysis. Almost perfect agreements between simulation codes were achieved. The comparison with measurement suggests the further needs of room effect assessment.
T2  - IEEE Transactions on Nuclear Science
T1  - The Mini Labyrinth Benchmark for Radiation Protection and Shielding Analysis
VL  - 69
IS  - 4
SP  - 745
EP  - 752
DO  - 10.1109/TNS.2022.3144838
ER  - 

@article{
author = "Vrban, Branislav and Čerba, Štefan and Lüley, Jakub and Nečas, Vladimír and Filova, Vendula and Katovský, Karel and Štastný, Ondrej and Gloginjić, Marko and Erich, Marko and Mravik, Željko and Petrović, Srdjan",
year = "2022",
abstract = "The Mini Labyrinth experiment is a neutron and gamma shielding experiment currently being developed at the Slovak University of Technology, Bratislava (STU). The STU Mini Labyrinth consists of NEUTRONSTOP shielding blocks, water tank, PuBe neutron source, and graphite prism. This article describes the second construction version of the Mini Labyrinth experiment and presents the newest results of the neutron and gamma fields’ simulation and measurement. The PuBe neutron source with the emission rate of 1.06E7 $\textn\cdot \texts^-1$ was used in the experiment. The measurement of gamma ambient dose equivalent H*(10) and neutron count rates is performed by the Thermo Scientific RadEye portable survey meter and the SNM-11 BF3-filled corona detector. The simulation part was carried out using the state-of-the-art MCNP6 and SCALE6 MONACO stochastic calculation tools, considering the detailed geometry of the Mini Labyrinth and a combined neutron and gamma source of particles. The comparisons were performed between codes and the experiment. The propagation of cross-sectional uncertainties was investigated through the shielding analysis. Almost perfect agreements between simulation codes were achieved. The comparison with measurement suggests the further needs of room effect assessment.",
journal = "IEEE Transactions on Nuclear Science",
title = "The Mini Labyrinth Benchmark for Radiation Protection and Shielding Analysis",
volume = "69",
number = "4",
pages = "745-752",
doi = "10.1109/TNS.2022.3144838"
}

Vrban, B., Čerba, Š., Lüley, J., Nečas, V., Filova, V., Katovský, K., Štastný, O., Gloginjić, M., Erich, M., Mravik, Ž.,& Petrović, S.. (2022). The Mini Labyrinth Benchmark for Radiation Protection and Shielding Analysis. in IEEE Transactions on Nuclear Science, 69(4), 745-752.
https://doi.org/10.1109/TNS.2022.3144838

Vrban B, Čerba Š, Lüley J, Nečas V, Filova V, Katovský K, Štastný O, Gloginjić M, Erich M, Mravik Ž, Petrović S. The Mini Labyrinth Benchmark for Radiation Protection and Shielding Analysis. in IEEE Transactions on Nuclear Science. 2022;69(4):745-752.
doi:10.1109/TNS.2022.3144838 .

Vrban, Branislav, Čerba, Štefan, Lüley, Jakub, Nečas, Vladimír, Filova, Vendula, Katovský, Karel, Štastný, Ondrej, Gloginjić, Marko, Erich, Marko, Mravik, Željko, Petrović, Srdjan, "The Mini Labyrinth Benchmark for Radiation Protection and Shielding Analysis" in IEEE Transactions on Nuclear Science, 69, no. 4 (2022):745-752,
https://doi.org/10.1109/TNS.2022.3144838 . .

TY  - JOUR
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Mravik, Željko
AU  - Vrban, Branislav
AU  - Čerba, Štefan
AU  - Lüley, Jakub
AU  - Filová, Vendula
AU  - Katovský, Karel
AU  - Štastný, Ondej
AU  - Burian, Jiri
AU  - Petrović, Srđan M.
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10523
AB  - Due to its unique material properties, such as extreme hardness and radiation resistance, silicon carbide has been used as an important construction material for environments with extreme conditions, like those present in nuclear reactors. As such, it is constantly exposed to energetic particles (e.g., neutrons) and consequently subjected to gradual crystal lattice degradation. In this article, the 6H-SiC crystal damage has been simulated by the implantation of 4 MeV C3+ ions in the (0001) axial direction of a single 6H-SiC crystal to the ion fluences of 1.359 1015 cm-2, 6.740 1015 cm-2, and 2.02 1016 cm-2. These implanted samples were subsequently analyzed by Rutherford and elastic backscattering spectrometry in the channeling orientation (RBS/C & EBS/C) by the usage of 1 MeV protons. Obtained spectra were analyzed by channeling simulation phenomenological computer code (CSIM) to obtain quantitative crystal damage depth profiles. The difference between the positions of damage profile maxima obtained by CSIM code and one simulated with stopping and range of ions in matter (SRIM), a Monte Carlo based computer code focused on ion implantation simulation in random crystal direction only, is about 10%. Therefore, due to small profile depth shifts, the usage of the iterative procedure for calculating crystal damage depth profiles is proposed. It was shown that profiles obtained by iterative procedure show very good agreement with the ones obtained with CSIM code. Additionally, with the introduction of channeling to random energy loss ratio the energy to depth profile scale conversion, the agreement with CSIM profiles becomes excellent.
T2  - Nuclear Technology and Radiation Protection
T1  - Comparative study of the MeV ion channeling implantation induced damage in 6H-SiC by the iterative procedure and phenomenological CSIM computer code
VL  - 37
IS  - 2
SP  - 128
EP  - 137
DO  - 10.2298/NTRP2202128G
ER  - 

@article{
author = "Gloginjić, Marko and Erich, Marko and Mravik, Željko and Vrban, Branislav and Čerba, Štefan and Lüley, Jakub and Filová, Vendula and Katovský, Karel and Štastný, Ondej and Burian, Jiri and Petrović, Srđan M.",
year = "2022",
abstract = "Due to its unique material properties, such as extreme hardness and radiation resistance, silicon carbide has been used as an important construction material for environments with extreme conditions, like those present in nuclear reactors. As such, it is constantly exposed to energetic particles (e.g., neutrons) and consequently subjected to gradual crystal lattice degradation. In this article, the 6H-SiC crystal damage has been simulated by the implantation of 4 MeV C3+ ions in the (0001) axial direction of a single 6H-SiC crystal to the ion fluences of 1.359 1015 cm-2, 6.740 1015 cm-2, and 2.02 1016 cm-2. These implanted samples were subsequently analyzed by Rutherford and elastic backscattering spectrometry in the channeling orientation (RBS/C & EBS/C) by the usage of 1 MeV protons. Obtained spectra were analyzed by channeling simulation phenomenological computer code (CSIM) to obtain quantitative crystal damage depth profiles. The difference between the positions of damage profile maxima obtained by CSIM code and one simulated with stopping and range of ions in matter (SRIM), a Monte Carlo based computer code focused on ion implantation simulation in random crystal direction only, is about 10%. Therefore, due to small profile depth shifts, the usage of the iterative procedure for calculating crystal damage depth profiles is proposed. It was shown that profiles obtained by iterative procedure show very good agreement with the ones obtained with CSIM code. Additionally, with the introduction of channeling to random energy loss ratio the energy to depth profile scale conversion, the agreement with CSIM profiles becomes excellent.",
journal = "Nuclear Technology and Radiation Protection",
title = "Comparative study of the MeV ion channeling implantation induced damage in 6H-SiC by the iterative procedure and phenomenological CSIM computer code",
volume = "37",
number = "2",
pages = "128-137",
doi = "10.2298/NTRP2202128G"
}

Gloginjić, M., Erich, M., Mravik, Ž., Vrban, B., Čerba, Š., Lüley, J., Filová, V., Katovský, K., Štastný, O., Burian, J.,& Petrović, S. M.. (2022). Comparative study of the MeV ion channeling implantation induced damage in 6H-SiC by the iterative procedure and phenomenological CSIM computer code. in Nuclear Technology and Radiation Protection, 37(2), 128-137.
https://doi.org/10.2298/NTRP2202128G

Gloginjić M, Erich M, Mravik Ž, Vrban B, Čerba Š, Lüley J, Filová V, Katovský K, Štastný O, Burian J, Petrović SM. Comparative study of the MeV ion channeling implantation induced damage in 6H-SiC by the iterative procedure and phenomenological CSIM computer code. in Nuclear Technology and Radiation Protection. 2022;37(2):128-137.
doi:10.2298/NTRP2202128G .

Gloginjić, Marko, Erich, Marko, Mravik, Željko, Vrban, Branislav, Čerba, Štefan, Lüley, Jakub, Filová, Vendula, Katovský, Karel, Štastný, Ondej, Burian, Jiri, Petrović, Srđan M., "Comparative study of the MeV ion channeling implantation induced damage in 6H-SiC by the iterative procedure and phenomenological CSIM computer code" in Nuclear Technology and Radiation Protection, 37, no. 2 (2022):128-137,
https://doi.org/10.2298/NTRP2202128G . .

TY  - CONF
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Mravik, Željko
AU  - Vrban, Branislav
AU  - Čerba, Štefan
AU  - Lüley, Jakub
AU  - Filová, Vendula
AU  - Katovský, Karel
AU  - Štastný, Ondřej
AU  - Burian, Jiří
AU  - Petrović, Srđan M.
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10822
AB  - During the ion implantation process, regardless if it was attentional or not, amorphization will be introduced into the crystal structure. Depending on the chosen ions, different quantities of the amorphization will be introduced for the same applied fluences. In order to estimate the total amorphization of the SiC crystal for different ions and fluences combination, an assessment model was proposed. For this purpose, 4 MeV carbon and silicon ions with multiple fluences were implanted in the [0001] axial direction of a 6H-SiC single crystal. The amorphization depth distributions were obtained by Elastic Backscattering Spectroscopy/channeling spectra analysis via Channeling SIMulation (CSIM) phenomenological computer code. As a result, relation of the total induced amorphization and implantation fluences for carbon and silicon ions were obtained. Based on these experimental results, a total amorphization assessment model for different ions (energy of 4 MeV) and fluences combination was established.
PB  - Belgrade : Serbian Ceramic Society
C3  - Advanced Ceramics and Application : 10th Serbian Ceramic Society Conference : program and the book of abstracts; September 26-27, 2022; Belgrade
T1  - Correlation of the total induced amorphization in SiC crystal with the ion implantation fluence
SP  - 82
UR  - https://hdl.handle.net/21.15107/rcub_vinar_10822
ER  - 

@conference{
author = "Gloginjić, Marko and Erich, Marko and Mravik, Željko and Vrban, Branislav and Čerba, Štefan and Lüley, Jakub and Filová, Vendula and Katovský, Karel and Štastný, Ondřej and Burian, Jiří and Petrović, Srđan M.",
year = "2022",
abstract = "During the ion implantation process, regardless if it was attentional or not, amorphization will be introduced into the crystal structure. Depending on the chosen ions, different quantities of the amorphization will be introduced for the same applied fluences. In order to estimate the total amorphization of the SiC crystal for different ions and fluences combination, an assessment model was proposed. For this purpose, 4 MeV carbon and silicon ions with multiple fluences were implanted in the [0001] axial direction of a 6H-SiC single crystal. The amorphization depth distributions were obtained by Elastic Backscattering Spectroscopy/channeling spectra analysis via Channeling SIMulation (CSIM) phenomenological computer code. As a result, relation of the total induced amorphization and implantation fluences for carbon and silicon ions were obtained. Based on these experimental results, a total amorphization assessment model for different ions (energy of 4 MeV) and fluences combination was established.",
publisher = "Belgrade : Serbian Ceramic Society",
journal = "Advanced Ceramics and Application : 10th Serbian Ceramic Society Conference : program and the book of abstracts; September 26-27, 2022; Belgrade",
title = "Correlation of the total induced amorphization in SiC crystal with the ion implantation fluence",
pages = "82",
url = "https://hdl.handle.net/21.15107/rcub_vinar_10822"
}

Gloginjić, M., Erich, M., Mravik, Ž., Vrban, B., Čerba, Š., Lüley, J., Filová, V., Katovský, K., Štastný, O., Burian, J.,& Petrović, S. M.. (2022). Correlation of the total induced amorphization in SiC crystal with the ion implantation fluence. in Advanced Ceramics and Application : 10th Serbian Ceramic Society Conference : program and the book of abstracts; September 26-27, 2022; Belgrade
Belgrade : Serbian Ceramic Society., 82.
https://hdl.handle.net/21.15107/rcub_vinar_10822

Gloginjić M, Erich M, Mravik Ž, Vrban B, Čerba Š, Lüley J, Filová V, Katovský K, Štastný O, Burian J, Petrović SM. Correlation of the total induced amorphization in SiC crystal with the ion implantation fluence. in Advanced Ceramics and Application : 10th Serbian Ceramic Society Conference : program and the book of abstracts; September 26-27, 2022; Belgrade. 2022;:82.
https://hdl.handle.net/21.15107/rcub_vinar_10822 .

Gloginjić, Marko, Erich, Marko, Mravik, Željko, Vrban, Branislav, Čerba, Štefan, Lüley, Jakub, Filová, Vendula, Katovský, Karel, Štastný, Ondřej, Burian, Jiří, Petrović, Srđan M., "Correlation of the total induced amorphization in SiC crystal with the ion implantation fluence" in Advanced Ceramics and Application : 10th Serbian Ceramic Society Conference : program and the book of abstracts; September 26-27, 2022; Belgrade (2022):82,
https://hdl.handle.net/21.15107/rcub_vinar_10822 .

TY  - CONF
AU  - Katovsky, Karel
AU  - Burian, Jiří
AU  - Čerba, Štefan
AU  - Erich, Marko
AU  - Filová, Vendula
AU  - Gloginjić, Marko
AU  - Lüley, Jakub
AU  - Mravik, Željko
AU  - Petrović, Srđan
AU  - Šťastný, Ondřej
AU  - Vrban, Branislav
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12491
AB  - Neutron activation measurement using set of thin foils from highly pure materials is a method known for decades. Using shielding materials like cadmium might add an extra information about neutron field which causes the activation. We very often use relation of activity of bare foil to the activity of the same foil covered by cadmium, and call it cadmium ratio or cadmium spectral index. We could use the same way to define another spectral indices like gadolinium ratio, hafnium ratio, boron ratio, etc. Manipulation with some specific materials like pure gadolinium, samarium, dysprosium or even boron is difficult, sometimes impossible. We introduce and tested method of ion implantation of neutron shielding material directly to the activation foil, and thus redefine spectral index as a ratio between activity of foil without implanted absorber to the activity with implanted absorber. For thicker layers of absorber another method, a vapor deposition, was used and tested. Activities are tested in systems with different neutron spectra, and compared with theoretical models and MCNP simulations.
C3  - APCOM 2022 : 27th International Conference on Applied Physics of Condensed Matter : Book of abstracts
T1  - Neutron Field Spectral Indices Investigation Using Activation Foils Modified by Ion Implantation and Vapor Deposition
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12491
ER  - 

@conference{
author = "Katovsky, Karel and Burian, Jiří and Čerba, Štefan and Erich, Marko and Filová, Vendula and Gloginjić, Marko and Lüley, Jakub and Mravik, Željko and Petrović, Srđan and Šťastný, Ondřej and Vrban, Branislav",
year = "2022",
abstract = "Neutron activation measurement using set of thin foils from highly pure materials is a method known for decades. Using shielding materials like cadmium might add an extra information about neutron field which causes the activation. We very often use relation of activity of bare foil to the activity of the same foil covered by cadmium, and call it cadmium ratio or cadmium spectral index. We could use the same way to define another spectral indices like gadolinium ratio, hafnium ratio, boron ratio, etc. Manipulation with some specific materials like pure gadolinium, samarium, dysprosium or even boron is difficult, sometimes impossible. We introduce and tested method of ion implantation of neutron shielding material directly to the activation foil, and thus redefine spectral index as a ratio between activity of foil without implanted absorber to the activity with implanted absorber. For thicker layers of absorber another method, a vapor deposition, was used and tested. Activities are tested in systems with different neutron spectra, and compared with theoretical models and MCNP simulations.",
journal = "APCOM 2022 : 27th International Conference on Applied Physics of Condensed Matter : Book of abstracts",
title = "Neutron Field Spectral Indices Investigation Using Activation Foils Modified by Ion Implantation and Vapor Deposition",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12491"
}

Katovsky, K., Burian, J., Čerba, Š., Erich, M., Filová, V., Gloginjić, M., Lüley, J., Mravik, Ž., Petrović, S., Šťastný, O.,& Vrban, B.. (2022). Neutron Field Spectral Indices Investigation Using Activation Foils Modified by Ion Implantation and Vapor Deposition. in APCOM 2022 : 27th International Conference on Applied Physics of Condensed Matter : Book of abstracts.
https://hdl.handle.net/21.15107/rcub_vinar_12491

Katovsky K, Burian J, Čerba Š, Erich M, Filová V, Gloginjić M, Lüley J, Mravik Ž, Petrović S, Šťastný O, Vrban B. Neutron Field Spectral Indices Investigation Using Activation Foils Modified by Ion Implantation and Vapor Deposition. in APCOM 2022 : 27th International Conference on Applied Physics of Condensed Matter : Book of abstracts. 2022;.
https://hdl.handle.net/21.15107/rcub_vinar_12491 .

Katovsky, Karel, Burian, Jiří, Čerba, Štefan, Erich, Marko, Filová, Vendula, Gloginjić, Marko, Lüley, Jakub, Mravik, Željko, Petrović, Srđan, Šťastný, Ondřej, Vrban, Branislav, "Neutron Field Spectral Indices Investigation Using Activation Foils Modified by Ion Implantation and Vapor Deposition" in APCOM 2022 : 27th International Conference on Applied Physics of Condensed Matter : Book of abstracts (2022),
https://hdl.handle.net/21.15107/rcub_vinar_12491 .

TY  - CONF
AU  - Burian, Jiří
AU  - Čerba, Štefan
AU  - Erich, Marko
AU  - Filová, Vendula
AU  - Gloginjić, Marko
AU  - Katovský, Karel
AU  - Luley, Jakub
AU  - Mravik, Željko
AU  - Nečas, Vladimír
AU  - Petrović, Srđan
AU  - Šťastný, Ondřej
AU  - Vrban, Branislav
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12497
AB  - With regard to progress achieved in computation methods of ionizing radiation transport in various materials, there is increased need for validation of such computer codes with experiments. Therefore, special measurement equipment has been built at Brno University of Technology. It serves for experimental determination of attenuation coefficients of various shielding materials. Special focus is put on inhomogeneous materials, new composites, and non-standard shielding bricks which are usually used for various inside shielding reinforcement. Various measurements methods are tested, different detectors (gas filled, semi-conductor, scintillation, etc.) are used. Dependence on measurement geometry is also tested. Basic build-up factor measurements have also been done and its investigation will continue. Experimental results are then compared with values obtained by Monte Carlo methods based codes such as MCNP and PHITS. Results are then compared with literature and possibility of the methodology further utilization is discussed in conclusions.
C3  - DRO 2021 - Dny radiační ochrany XLII : Book of abstracts
T1  - Precise experimental determination of attenuation coefficient and its simulation
SP  - 131
EP  - 131
DO  - 10.14311/DRO.2021.XLII
ER  - 

@conference{
author = "Burian, Jiří and Čerba, Štefan and Erich, Marko and Filová, Vendula and Gloginjić, Marko and Katovský, Karel and Luley, Jakub and Mravik, Željko and Nečas, Vladimír and Petrović, Srđan and Šťastný, Ondřej and Vrban, Branislav",
year = "2022",
abstract = "With regard to progress achieved in computation methods of ionizing radiation transport in various materials, there is increased need for validation of such computer codes with experiments. Therefore, special measurement equipment has been built at Brno University of Technology. It serves for experimental determination of attenuation coefficients of various shielding materials. Special focus is put on inhomogeneous materials, new composites, and non-standard shielding bricks which are usually used for various inside shielding reinforcement. Various measurements methods are tested, different detectors (gas filled, semi-conductor, scintillation, etc.) are used. Dependence on measurement geometry is also tested. Basic build-up factor measurements have also been done and its investigation will continue. Experimental results are then compared with values obtained by Monte Carlo methods based codes such as MCNP and PHITS. Results are then compared with literature and possibility of the methodology further utilization is discussed in conclusions.",
journal = "DRO 2021 - Dny radiační ochrany XLII : Book of abstracts",
title = "Precise experimental determination of attenuation coefficient and its simulation",
pages = "131-131",
doi = "10.14311/DRO.2021.XLII"
}

Burian, J., Čerba, Š., Erich, M., Filová, V., Gloginjić, M., Katovský, K., Luley, J., Mravik, Ž., Nečas, V., Petrović, S., Šťastný, O.,& Vrban, B.. (2022). Precise experimental determination of attenuation coefficient and its simulation. in DRO 2021 - Dny radiační ochrany XLII : Book of abstracts, 131-131.
https://doi.org/10.14311/DRO.2021.XLII

Burian J, Čerba Š, Erich M, Filová V, Gloginjić M, Katovský K, Luley J, Mravik Ž, Nečas V, Petrović S, Šťastný O, Vrban B. Precise experimental determination of attenuation coefficient and its simulation. in DRO 2021 - Dny radiační ochrany XLII : Book of abstracts. 2022;:131-131.
doi:10.14311/DRO.2021.XLII .

Burian, Jiří, Čerba, Štefan, Erich, Marko, Filová, Vendula, Gloginjić, Marko, Katovský, Karel, Luley, Jakub, Mravik, Željko, Nečas, Vladimír, Petrović, Srđan, Šťastný, Ondřej, Vrban, Branislav, "Precise experimental determination of attenuation coefficient and its simulation" in DRO 2021 - Dny radiační ochrany XLII : Book of abstracts (2022):131-131,
https://doi.org/10.14311/DRO.2021.XLII . .

TY  - CONF
AU  - Čerba, Štefan
AU  - Vrban, Branislav
AU  - Luley, Jakub
AU  - Nečas, Vladimír
AU  - Katovský, Karel
AU  - Šťastný, Ondřej
AU  - Filová, Vendula
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Mravik, Željko
AU  - Petrović, Srđan
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12500
AB  - Since World War II there has been a significant development of methods and approaches used in the calculation of radiation shielding. Over time, modelling and simulation of relevant effects shifted from an analytical modelling to methods based on the so-called primary principles and their stochastic nature. Even nowadays it is necessary to know the accuracy of available computation codes, used nuclear data and it is desirable to evaluate the influence of the user on the final calculated parameter. One of the most effective ways of gaining user experience and minimizing user effects on the results of calculation is international collaboration comprising the designing and constructing of relevant benchmark experiments, following simulation with state-of-the-art calculation tools, comparison of work group results and subsequent identification of the source of observed deviations from the experiment. Currently a new experimental workplace, the so called “Mini Labyrinth” is being developed at STU. It is a simple neutron and gamma shielding benchmark, inspired by the ALARM-CF-AIR-LAB-001 ICSBEP experiment. The latest V1 experimental setup consists of a PuBe neutron source, several NEUTRONSTOP C5 shielding blocks (polyethylene with 5 % boron), H2O filled PLA tank, plastic source holder, and detectors placed inside the Mini Labyrinth and around the experimental workplace. This paper is indeed focused on the monitoring of the radiation doses around the workplace using the NUVIATEC NUDET detector and the Thermo Scientific RadEye personal dose meter, as well as on the comparison of the measured quantities with ones simulated by MONACO (as a part of SCALE 6.2.4 system) and MCNP 6. The influence of different cross-section libraries and propagation of cross-section uncertainties is studied through this shielding analysis. The achieved results are included and finally, some discussions on further needed development are also included.
C3  - DRO 2021 - Dny radiační ochrany XLII : Book of abstracts
T1  - Monitoring of the radiation doses around the mini labyrinth experimental workspace at STU
SP  - 24
EP  - 24
DO  - 10.14311/DRO.2021.XLII
ER  - 

@conference{
author = "Čerba, Štefan and Vrban, Branislav and Luley, Jakub and Nečas, Vladimír and Katovský, Karel and Šťastný, Ondřej and Filová, Vendula and Gloginjić, Marko and Erich, Marko and Mravik, Željko and Petrović, Srđan",
year = "2022",
abstract = "Since World War II there has been a significant development of methods and approaches used in the calculation of radiation shielding. Over time, modelling and simulation of relevant effects shifted from an analytical modelling to methods based on the so-called primary principles and their stochastic nature. Even nowadays it is necessary to know the accuracy of available computation codes, used nuclear data and it is desirable to evaluate the influence of the user on the final calculated parameter. One of the most effective ways of gaining user experience and minimizing user effects on the results of calculation is international collaboration comprising the designing and constructing of relevant benchmark experiments, following simulation with state-of-the-art calculation tools, comparison of work group results and subsequent identification of the source of observed deviations from the experiment. Currently a new experimental workplace, the so called “Mini Labyrinth” is being developed at STU. It is a simple neutron and gamma shielding benchmark, inspired by the ALARM-CF-AIR-LAB-001 ICSBEP experiment. The latest V1 experimental setup consists of a PuBe neutron source, several NEUTRONSTOP C5 shielding blocks (polyethylene with 5 % boron), H2O filled PLA tank, plastic source holder, and detectors placed inside the Mini Labyrinth and around the experimental workplace. This paper is indeed focused on the monitoring of the radiation doses around the workplace using the NUVIATEC NUDET detector and the Thermo Scientific RadEye personal dose meter, as well as on the comparison of the measured quantities with ones simulated by MONACO (as a part of SCALE 6.2.4 system) and MCNP 6. The influence of different cross-section libraries and propagation of cross-section uncertainties is studied through this shielding analysis. The achieved results are included and finally, some discussions on further needed development are also included.",
journal = "DRO 2021 - Dny radiační ochrany XLII : Book of abstracts",
title = "Monitoring of the radiation doses around the mini labyrinth experimental workspace at STU",
pages = "24-24",
doi = "10.14311/DRO.2021.XLII"
}

Čerba, Š., Vrban, B., Luley, J., Nečas, V., Katovský, K., Šťastný, O., Filová, V., Gloginjić, M., Erich, M., Mravik, Ž.,& Petrović, S.. (2022). Monitoring of the radiation doses around the mini labyrinth experimental workspace at STU. in DRO 2021 - Dny radiační ochrany XLII : Book of abstracts, 24-24.
https://doi.org/10.14311/DRO.2021.XLII

Čerba Š, Vrban B, Luley J, Nečas V, Katovský K, Šťastný O, Filová V, Gloginjić M, Erich M, Mravik Ž, Petrović S. Monitoring of the radiation doses around the mini labyrinth experimental workspace at STU. in DRO 2021 - Dny radiační ochrany XLII : Book of abstracts. 2022;:24-24.
doi:10.14311/DRO.2021.XLII .

Čerba, Štefan, Vrban, Branislav, Luley, Jakub, Nečas, Vladimír, Katovský, Karel, Šťastný, Ondřej, Filová, Vendula, Gloginjić, Marko, Erich, Marko, Mravik, Željko, Petrović, Srđan, "Monitoring of the radiation doses around the mini labyrinth experimental workspace at STU" in DRO 2021 - Dny radiační ochrany XLII : Book of abstracts (2022):24-24,
https://doi.org/10.14311/DRO.2021.XLII . .

TY  - JOUR
AU  - Telečki, Igor N.
AU  - Vukosavljević, Ljubiša
AU  - Trajić, Ivan
AU  - Erich, Marko
AU  - Jocić, Viktor
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10179
AB  - The mVINIS ion source, a part of FAMA installation at Vinca Institute of Nuclear Sciences, is able to produce multiple charged heavy ion beams through the utilization of vapors created by the process of melting solids inside the miniature oven (mini-oven). The mini-oven that was used previously could only reach the maximum temperature of 800?C, which is far too low for evaporating most metals. For this purpose, a higher operating-temperature of 1500?C was needed. Our study focuses on numerical finite element method analysis of the temperature distribution of newly designed mini-oven.
T2  - Thermal Science
T1  - The finite element method analysis of temperature distribution of the FAMA electron cyclotron resonance mini-oven
VL  - 26
IS  - 1 Part A
SP  - 175
EP  - 184
DO  - 10.2298/TSCI210519235T
ER  - 

@article{
author = "Telečki, Igor N. and Vukosavljević, Ljubiša and Trajić, Ivan and Erich, Marko and Jocić, Viktor",
year = "2022",
abstract = "The mVINIS ion source, a part of FAMA installation at Vinca Institute of Nuclear Sciences, is able to produce multiple charged heavy ion beams through the utilization of vapors created by the process of melting solids inside the miniature oven (mini-oven). The mini-oven that was used previously could only reach the maximum temperature of 800?C, which is far too low for evaporating most metals. For this purpose, a higher operating-temperature of 1500?C was needed. Our study focuses on numerical finite element method analysis of the temperature distribution of newly designed mini-oven.",
journal = "Thermal Science",
title = "The finite element method analysis of temperature distribution of the FAMA electron cyclotron resonance mini-oven",
volume = "26",
number = "1 Part A",
pages = "175-184",
doi = "10.2298/TSCI210519235T"
}

Telečki, I. N., Vukosavljević, L., Trajić, I., Erich, M.,& Jocić, V.. (2022). The finite element method analysis of temperature distribution of the FAMA electron cyclotron resonance mini-oven. in Thermal Science, 26(1 Part A), 175-184.
https://doi.org/10.2298/TSCI210519235T

Telečki IN, Vukosavljević L, Trajić I, Erich M, Jocić V. The finite element method analysis of temperature distribution of the FAMA electron cyclotron resonance mini-oven. in Thermal Science. 2022;26(1 Part A):175-184.
doi:10.2298/TSCI210519235T .

Telečki, Igor N., Vukosavljević, Ljubiša, Trajić, Ivan, Erich, Marko, Jocić, Viktor, "The finite element method analysis of temperature distribution of the FAMA electron cyclotron resonance mini-oven" in Thermal Science, 26, no. 1 Part A (2022):175-184,
https://doi.org/10.2298/TSCI210519235T . .

TY  - CONF
AU  - Čerba, Štefan
AU  - Vrban, Branislav
AU  - Lüley, Jakub
AU  - Osuský, Filip
AU  - Nečas, Vladimír
AU  - Štastný, Ondřej
AU  - Katovský, Karel
AU  - Gloginjić, Marko
AU  - Mravik, Željko
AU  - Erich, Marko
AU  - Petrović, Srđan M.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10036
AB  - The Mini Labyrinth experiment is a simple neutron and gamma shielding experiment developed at STU, inspired by the ALARM-CF-AIR-LAB-001 ICSBEP benchmark experiment, originally constructed in the former Soviet Union in 1982. Compared to the original Labyrinth, which was made from concrete blocks and had dimension of several meters, the STU Mini Labyrinth is approximately ten times smaller and consists of NEUTRONSTOP shielding blocks. The purpose of this experiment is to validate the computer codes of STU and partners involved in the APVV-DS international project “Experimental and simulation shielding studies of materials used in radiation protection”. This paper gives a brief overview of the experimental workplace and brings the first experimental results and their comparison with computer simulation. The very first experiment performed in the Mini Labyrinth experimental workplace was focused on the measurement of neutron and gamma count rate inside the Mini Labyrinth using the Thermo Scientific RadEye dose meter. The experimental setup also consisted of a PuBe radioisotope neutron source and light water moderator placed in a plastic tank between the neutron source and the detector. The simulation part was carried out using the state-of-the-art MCNP6 and SCALE6 MONACO stochastic calculation tools taking into account the detailed geometry of the labyrinth and a combined neutron- gamma source of particles. The comparisons were performed between codes, based on dose rate in the unique detection positions and using a 3D map of neutron and photon fluxes, using the so called meshtallies. The comparison between the simulated and measured data was performed based on the measured neutron count rate
C3  - AIP Conference Proceedings
T1  - Preliminary results of the STU mini labyrinth radiation shielding experiment
VL  - 2411
IS  - 1
SP  - 070001
DO  - 10.1063/5.0067366
ER  - 

@conference{
author = "Čerba, Štefan and Vrban, Branislav and Lüley, Jakub and Osuský, Filip and Nečas, Vladimír and Štastný, Ondřej and Katovský, Karel and Gloginjić, Marko and Mravik, Željko and Erich, Marko and Petrović, Srđan M.",
year = "2021",
abstract = "The Mini Labyrinth experiment is a simple neutron and gamma shielding experiment developed at STU, inspired by the ALARM-CF-AIR-LAB-001 ICSBEP benchmark experiment, originally constructed in the former Soviet Union in 1982. Compared to the original Labyrinth, which was made from concrete blocks and had dimension of several meters, the STU Mini Labyrinth is approximately ten times smaller and consists of NEUTRONSTOP shielding blocks. The purpose of this experiment is to validate the computer codes of STU and partners involved in the APVV-DS international project “Experimental and simulation shielding studies of materials used in radiation protection”. This paper gives a brief overview of the experimental workplace and brings the first experimental results and their comparison with computer simulation. The very first experiment performed in the Mini Labyrinth experimental workplace was focused on the measurement of neutron and gamma count rate inside the Mini Labyrinth using the Thermo Scientific RadEye dose meter. The experimental setup also consisted of a PuBe radioisotope neutron source and light water moderator placed in a plastic tank between the neutron source and the detector. The simulation part was carried out using the state-of-the-art MCNP6 and SCALE6 MONACO stochastic calculation tools taking into account the detailed geometry of the labyrinth and a combined neutron- gamma source of particles. The comparisons were performed between codes, based on dose rate in the unique detection positions and using a 3D map of neutron and photon fluxes, using the so called meshtallies. The comparison between the simulated and measured data was performed based on the measured neutron count rate",
journal = "AIP Conference Proceedings",
title = "Preliminary results of the STU mini labyrinth radiation shielding experiment",
volume = "2411",
number = "1",
pages = "070001",
doi = "10.1063/5.0067366"
}

Čerba, Š., Vrban, B., Lüley, J., Osuský, F., Nečas, V., Štastný, O., Katovský, K., Gloginjić, M., Mravik, Ž., Erich, M.,& Petrović, S. M.. (2021). Preliminary results of the STU mini labyrinth radiation shielding experiment. in AIP Conference Proceedings, 2411(1), 070001.
https://doi.org/10.1063/5.0067366

Čerba Š, Vrban B, Lüley J, Osuský F, Nečas V, Štastný O, Katovský K, Gloginjić M, Mravik Ž, Erich M, Petrović SM. Preliminary results of the STU mini labyrinth radiation shielding experiment. in AIP Conference Proceedings. 2021;2411(1):070001.
doi:10.1063/5.0067366 .

Čerba, Štefan, Vrban, Branislav, Lüley, Jakub, Osuský, Filip, Nečas, Vladimír, Štastný, Ondřej, Katovský, Karel, Gloginjić, Marko, Mravik, Željko, Erich, Marko, Petrović, Srđan M., "Preliminary results of the STU mini labyrinth radiation shielding experiment" in AIP Conference Proceedings, 2411, no. 1 (2021):070001,
https://doi.org/10.1063/5.0067366 . .

TY  - JOUR
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić Luketić, Kristina
AU  - Petrović, Srđan M.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9858
AB  - The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.
T2  - Journal of Nuclear Materials
T1  - The quantitative 6H-SiC crystal damage depth profiling
VL  - 555
SP  - 153143
DO  - 10.1016/j.jnucmat.2021.153143
ER  - 

@article{
author = "Gloginjić, Marko and Erich, Marko and Kokkoris, Michael and Liarokapis, Efthymios and Fazinić, Stjepko and Karlušić, Marko and Tomić Luketić, Kristina and Petrović, Srđan M.",
year = "2021",
abstract = "The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.",
journal = "Journal of Nuclear Materials",
title = "The quantitative 6H-SiC crystal damage depth profiling",
volume = "555",
pages = "153143",
doi = "10.1016/j.jnucmat.2021.153143"
}

Gloginjić, M., Erich, M., Kokkoris, M., Liarokapis, E., Fazinić, S., Karlušić, M., Tomić Luketić, K.,& Petrović, S. M.. (2021). The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials, 555, 153143.
https://doi.org/10.1016/j.jnucmat.2021.153143

Gloginjić M, Erich M, Kokkoris M, Liarokapis E, Fazinić S, Karlušić M, Tomić Luketić K, Petrović SM. The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials. 2021;555:153143.
doi:10.1016/j.jnucmat.2021.153143 .

Gloginjić, Marko, Erich, Marko, Kokkoris, Michael, Liarokapis, Efthymios, Fazinić, Stjepko, Karlušić, Marko, Tomić Luketić, Kristina, Petrović, Srđan M., "The quantitative 6H-SiC crystal damage depth profiling" in Journal of Nuclear Materials, 555 (2021):153143,
https://doi.org/10.1016/j.jnucmat.2021.153143 . .

TY  - CONF
AU  - Kokkoris, Michael
AU  - Androulakaki, Effrossyni G.
AU  - Czyzycki, Mateusz
AU  - Erich, Marko
AU  - Karydas, Andreas G.
AU  - Leani, Juan J.
AU  - Migliori, Alessandro
AU  - Ntemou, Eleni
AU  - Paneta, Valentina
AU  - Petrović, Srđan M.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8396
AB  - Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.
C3  - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
T1  - Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
VL  - 450
SP  - 144
EP  - 148
DO  - 10.1016/j.nimb.2018.08.048
ER  - 

@conference{
author = "Kokkoris, Michael and Androulakaki, Effrossyni G. and Czyzycki, Mateusz and Erich, Marko and Karydas, Andreas G. and Leani, Juan J. and Migliori, Alessandro and Ntemou, Eleni and Paneta, Valentina and Petrović, Srđan M.",
year = "2019",
abstract = "Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.",
journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",
title = "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy",
volume = "450",
pages = "144-148",
doi = "10.1016/j.nimb.2018.08.048"
}

Kokkoris, M., Androulakaki, E. G., Czyzycki, M., Erich, M., Karydas, A. G., Leani, J. J., Migliori, A., Ntemou, E., Paneta, V.,& Petrović, S. M.. (2019). Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450, 144-148.
https://doi.org/10.1016/j.nimb.2018.08.048

Kokkoris M, Androulakaki EG, Czyzycki M, Erich M, Karydas AG, Leani JJ, Migliori A, Ntemou E, Paneta V, Petrović SM. Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2019;450:144-148.
doi:10.1016/j.nimb.2018.08.048 .

Kokkoris, Michael, Androulakaki, Effrossyni G., Czyzycki, Mateusz, Erich, Marko, Karydas, Andreas G., Leani, Juan J., Migliori, Alessandro, Ntemou, Eleni, Paneta, Valentina, Petrović, Srđan M., "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy" in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450 (2019):144-148,
https://doi.org/10.1016/j.nimb.2018.08.048 . .

TY  - JOUR
AU  - Balakshin, Yu. V.
AU  - Kozhemiako, A. V.
AU  - Petrović, Srđan M.
AU  - Erich, Marko
AU  - Shemukhin, Andrey A.
AU  - Chernysh, Vladimir S.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8436
AB  - Abstract: Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (1014–1015) ion/cm2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.
T2  - Semiconductors
T1  - Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon
VL  - 53
IS  - 8
SP  - 1011
EP  - 1017
DO  - 10.1134/S1063782619080062
ER  - 

@article{
author = "Balakshin, Yu. V. and Kozhemiako, A. V. and Petrović, Srđan M. and Erich, Marko and Shemukhin, Andrey A. and Chernysh, Vladimir S.",
year = "2019",
abstract = "Abstract: Experimental depth distributions of the concentration of implanted xenon ions depending on their charge state and irradiation energy are presented. Xenon ions in charge states q = 1–20 and energies in the range from 50 to 400 keV are incorporated into single-crystal silicon. Irradiation is performed in the direction not coinciding with the crystallographic axes of the crystal to avoid the channeling effect. The ion fluence varies in the range of 5 × (1014–1015) ion/cm2. The irradiation by singly charged ions and investigation of the samples by Rutherford backscattering spectroscopy is performed using an HVEE acceleration complex at Moscow State University. Multiply charged ions are implanted using a FAMA acceleration complex at the Vinća Institute of Nuclear Sciences. The depth distribution profiles of the incorporated ions are found using Rutherford backscattering spectroscopy. Experimental results are correlated with computer calculations. It is shown that the average projective path of multiply charged ions in most cases is shorter when compared with the average projected path of singly charged ions and the results of computer modeling.",
journal = "Semiconductors",
title = "Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon",
volume = "53",
number = "8",
pages = "1011-1017",
doi = "10.1134/S1063782619080062"
}

Balakshin, Yu. V., Kozhemiako, A. V., Petrović, S. M., Erich, M., Shemukhin, A. A.,& Chernysh, V. S.. (2019). Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon. in Semiconductors, 53(8), 1011-1017.
https://doi.org/10.1134/S1063782619080062

Balakshin YV, Kozhemiako AV, Petrović SM, Erich M, Shemukhin AA, Chernysh VS. Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon. in Semiconductors. 2019;53(8):1011-1017.
doi:10.1134/S1063782619080062 .

Balakshin, Yu. V., Kozhemiako, A. V., Petrović, Srđan M., Erich, Marko, Shemukhin, Andrey A., Chernysh, Vladimir S., "Influence of the Charge State of Xenon Ions on the Depth Distribution Profile Upon Implantation into Silicon" in Semiconductors, 53, no. 8 (2019):1011-1017,
https://doi.org/10.1134/S1063782619080062 . .

TY  - JOUR
AU  - Flessa, Aikaterini
AU  - Ntemou, Eleni
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Gloginjić, Marko
AU  - Petrović, Srđan M.
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić, Kristina
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8439
AB  - A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.
T2  - Journal of Raman Spectroscopy
T1  - Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC
VL  - 50
IS  - 8
SP  - 1186
EP  - 1196
DO  - 10.1002/jrs.5629
ER  - 

@article{
author = "Flessa, Aikaterini and Ntemou, Eleni and Kokkoris, Michael and Liarokapis, Efthymios and Gloginjić, Marko and Petrović, Srđan M. and Erich, Marko and Fazinić, Stjepko and Karlušić, Marko and Tomić, Kristina",
year = "2019",
abstract = "A 6H-SiC single crystal implanted in channeling mode by 4-MeV C+3 and Si+3 ions at various doping levels has been examined by scanning electron microscopy (SEM) and micro-Raman spectroscopy in order to study the lattice distortions inflicted by the impinging ions. C ions create zones of strongly damaged regions, parallel to the front face of the wafer with width increasing with the amount of doping. As expected, Si has induced considerably more lattice distortions than C, and more than one order of magnitude less doping induces apparently the same effect as C. Despite the large laser spot size compared with the boundaries of the distorted regions, micro-Raman data provided results agreeing with the SEM pictures and the Monte Carlo calculations using the SRIM-2013 software. From the evolution of the crystalline peaks in the Raman spectra obtained across the damaged area, one can conclude that the impinging ions do not accommodate as defects in the lattice but mostly displace the ions breaking the bonds and destroying the long range order. The spatial correlation model that takes into consideration the intensity variation at the laser spot and the anticipated from Monte Carlo calculations for the collision events can reproduce the trend of the strong transversal optical phonon width indicating nanocrystallites of a few nanometers size in the most damaged area. © 2019 John Wiley & Sons, Ltd.",
journal = "Journal of Raman Spectroscopy",
title = "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC",
volume = "50",
number = "8",
pages = "1186-1196",
doi = "10.1002/jrs.5629"
}

Flessa, A., Ntemou, E., Kokkoris, M., Liarokapis, E., Gloginjić, M., Petrović, S. M., Erich, M., Fazinić, S., Karlušić, M.,& Tomić, K.. (2019). Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy, 50(8), 1186-1196.
https://doi.org/10.1002/jrs.5629

Flessa A, Ntemou E, Kokkoris M, Liarokapis E, Gloginjić M, Petrović SM, Erich M, Fazinić S, Karlušić M, Tomić K. Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC. in Journal of Raman Spectroscopy. 2019;50(8):1186-1196.
doi:10.1002/jrs.5629 .

Flessa, Aikaterini, Ntemou, Eleni, Kokkoris, Michael, Liarokapis, Efthymios, Gloginjić, Marko, Petrović, Srđan M., Erich, Marko, Fazinić, Stjepko, Karlušić, Marko, Tomić, Kristina, "Raman mapping of 4‐MeV C and Si channeling implantation of 6H‐SiC" in Journal of Raman Spectroscopy, 50, no. 8 (2019):1186-1196,
https://doi.org/10.1002/jrs.5629 . .

TY  - JOUR
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7586
AB  - This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the < 1 0 0 > oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering (12)c(p,p(0))C-12 at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the < 1 0 0 > diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.
T2  - Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms
T1  - Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization
VL  - 416
SP  - 89
EP  - 93
DO  - 10.1016/j.nimb.2017.12.001
ER  - 

@article{
year = "2018",
abstract = "This work reports on the induced diamond crystal amorphization by 4 MeV carbon ions implanted in the < 1 0 0 > oriented crystal and its determination by application of RBS/C and EBS/C techniques. The spectra from the implanted samples were recorded for 1.2, 1.5, 1.75 and 1.9 MeV protons. For the two latter ones the strong resonance of the nuclear elastic scattering (12)c(p,p(0))C-12 at 1.737 MeV was explored. The backscattering channeling spectra were successfully fitted and the ion beam induced crystal amorphization depth profile was determined using a phenomenological approach, which is based on the properly defined Gompertz type dechanneling functions for protons in the < 1 0 0 > diamond crystal channels and the introduction of the concept of ion beam amorphization, which is implemented through our newly developed computer code CSIM.",
journal = "Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms",
title = "Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization",
volume = "416",
pages = "89-93",
doi = "10.1016/j.nimb.2017.12.001"
}

(2018). Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization. in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 416, 89-93.
https://doi.org/10.1016/j.nimb.2017.12.001

Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization. in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms. 2018;416:89-93.
doi:10.1016/j.nimb.2017.12.001 .

"Channeling implantation of high energy carbon ions in a diamond crystal: Determination of the induced crystal amorphization" in Nuclear Instruments & Methods in Physics Research Section B-Beam Interactions with Materials and Atoms, 416 (2018):89-93,
https://doi.org/10.1016/j.nimb.2017.12.001 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Fazinić, Stjepko
AU  - Petrović, Srđan M.
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1186
AB  - In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a (100) diamond crystal were experimentally and theoretically studied via a new computer simulation code. Proton incident energies for EBS/C spectra were in the energy range from 1.0 MeV to 1.9 MeV. The energy range was chosen in order to explore a distinct strong resonance of the C-12(p,p(0))C-12 elastic scattering at 1737 key. The computer simulation code applied for the fitting of the experimental spectra in the random mode was compared with the corresponding SIMNRA results. In the channeling mode, it assumes a Gompertz type sigmoidal dechanneling function, which has two fitting parameters, x(c), and k, the dechanneling range and rate, respectively. It also uses a, ratio of the channeling to random energy losses, as a fitting parameter. It was observed that x(c) increases, k decreases and a stays relatively constant with the proton incident energy. These observations confirm the physical interpretation of the fitting parameters. Also, they constitute the basics for the further development of the code for the quantification of induced amorphization and depth profiling of implanted ions.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - EBS/C proton spectra from a virgin diamond crystal
VL  - 381
SP  - 96
EP  - 102
DO  - 10.1016/j.nimb.2016.05.030
ER  - 

@article{
author = "Erich, Marko and Kokkoris, Michael and Fazinić, Stjepko and Petrović, Srđan M.",
year = "2016",
abstract = "In the present work, elastic backscattering channeling spectra, EBS/C, of protons in a (100) diamond crystal were experimentally and theoretically studied via a new computer simulation code. Proton incident energies for EBS/C spectra were in the energy range from 1.0 MeV to 1.9 MeV. The energy range was chosen in order to explore a distinct strong resonance of the C-12(p,p(0))C-12 elastic scattering at 1737 key. The computer simulation code applied for the fitting of the experimental spectra in the random mode was compared with the corresponding SIMNRA results. In the channeling mode, it assumes a Gompertz type sigmoidal dechanneling function, which has two fitting parameters, x(c), and k, the dechanneling range and rate, respectively. It also uses a, ratio of the channeling to random energy losses, as a fitting parameter. It was observed that x(c) increases, k decreases and a stays relatively constant with the proton incident energy. These observations confirm the physical interpretation of the fitting parameters. Also, they constitute the basics for the further development of the code for the quantification of induced amorphization and depth profiling of implanted ions.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "EBS/C proton spectra from a virgin diamond crystal",
volume = "381",
pages = "96-102",
doi = "10.1016/j.nimb.2016.05.030"
}

Erich, M., Kokkoris, M., Fazinić, S.,& Petrović, S. M.. (2016). EBS/C proton spectra from a virgin diamond crystal. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 381, 96-102.
https://doi.org/10.1016/j.nimb.2016.05.030

Erich M, Kokkoris M, Fazinić S, Petrović SM. EBS/C proton spectra from a virgin diamond crystal. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2016;381:96-102.
doi:10.1016/j.nimb.2016.05.030 .

Erich, Marko, Kokkoris, Michael, Fazinić, Stjepko, Petrović, Srđan M., "EBS/C proton spectra from a virgin diamond crystal" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 381 (2016):96-102,
https://doi.org/10.1016/j.nimb.2016.05.030 . .

TY  - THES
AU  - Erić, Marko
PY  - 2014
UR  - http://eteze.bg.ac.rs/application/showtheses?thesesId=1214
UR  - https://fedorabg.bg.ac.rs/fedora/get/o:8129/bdef:Content/download
UR  - http://vbs.rs/scripts/cobiss?command=DISPLAY&base=70036&RID=45271055
UR  - http://nardus.mpn.gov.rs/123456789/2262
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7245
AB  - У овој докторској дисертацији предмети експерименталног итеоријског истраживања су: (1) одређивање дубинског профила концентрацијеазота у силицијуму изазваног имплантациом јона азота 14N2+, енергије 4 MeV, у<100> и <110> канале кристала силицијума и у случајно оријентисан кристалсилицијума, и (2) одређивање дубинског профила аморфизације кристаласилицијума изазваног имплантацијом јона алуминијума 27Al2+, енергије 6 MeV, у<110> канале кристала силицијума и случајно оријентисан кристал силицијума.У свим горе наведеним случајевима флуенс имплантираних јона је износио 1017јона/cm2.Дубинско профилисање азота извршено је користећи методануклеарних реакција (NRA) изучавањем 14N(d,α0)12C и 14N(d,α1)12C нуклеарнихреакција и применом SRIM 2010 и SIMNRA рачунарских програма. За случајнооријентисани кристал силицијума уочено је неслагање експерименталнодобијених и симулираних профила концентрације азота, и, у складу са тим,претпостављено је формирање “мехура” азота у силицијуму и одговарајућапромена густине кристала силицијума, као могуће објашњење овог неслагањаизмеђу експерименталних резултата и теорије. Поред тога, измерени суспектри Радерфордовог повратног расејања у каналисаном случају (RBS/C) наимплантираним и неимплантираним тачкама кристала силицијума. Овиспектри су заједно са добијеним дубинским профилима концентрације азотакоришћени за одређивање дубинског профила аморфизације кристаласилицијума изазваног имплантацијом јона азота.Дубински профил аморфизације кристала силицијума изазванимплантацијом јона алуминијума одређен је скенирајућим микро-Рамановиммерењем дуж трансверзалног попречног пресека имплантиране областиivкристала. Кораци скенирања су били 0,2 и 0,3 μm, за случај имплантације у<110> и случајно оријентисани кристал силицијума, респективно. Добијенирезултати су упоређени са одговарајућим RBS/C спектрима. Такође, снимљенесу SEM фотографије тарнсверзалног попречног пресека имплантиране областикристала силицијума у случају <110> кристала силицијума. Утврђено јеодлично поклапање максимума дубинског профила аморфизације кристаласилицијума са максимумом концентрације имплантираног алуминијума усилицијуму. Ово јасно показује да се скенирајућа микро-Рамановаспектроскопија може користити као нови метод у одређивању дубинскогпрофила аморфизације кристала која је изазвана високо енергијском јонскомимплантацијом.
AB  - In this PhD thesis, the subjects of the experimental and theoretical researchare: (1) determination of the nitrogen depth profile of 4 MeV 14N2+ ions implanted inthe <100> and <110> channels of silicon crystals and in a randomly oriented siliconcrystal and (2) determination of the silicon crystal amorphization depth profileinduced by 6 MeV 27Al2+ ions in the <110> channels of silicon crystal and in arandomly oriented silicon crystal. In all of the above mentioned cases the fluence ofthe implanted ions was 1017 ions/ cm2.Nitrogen depth profiling was obtained applying the Nuclear ReactionAnalysis (NRA) method via study of 14N(d,α0)12C и 14N(d,α1)12C nuclear reactions andusing the SRIM 2010 and SIMNRA computer programs. In the case of the randomlyoriented silicon crystal pronounced difference between the experimentally obtainedand simulated nitrogen profiles was observed, and, with respect to that, formation ofthe nitrogen “bubble” in silicon and the corresponding change of the silicon densitywere assumed, as a possible explanation of that difference between the experimentalresults and theory. Additionally, Raderford Backscattering Spectrometry inchanneling mode (RBS/C) was performed on the implanted and virgin silicon crystalspots. Тhese spectra were used, together with the obtained concentration depthprofiles, for determination of the amorphization depth profiles of the silicon crystalsinduced by the nitrogen ions implantation.Silicon crystal amorphization depth profile induced by the aluminum ionsimplantation was obtained via micro-Raman Spectroscopy (μRS) scanningmeasurements of the crystal transversal cross section along the implanted region.Scanning steps were 0.2 μm and 0.3 μm for <110> and randomly oriented siliconcrystals, respectively. The obtained results were compared with the correspondingRBS/C spectra. Further, the Scanning Electron Microscopy (SEM) photograph of thevitransversal cross section of the implanted region for the case of <110> silicon crystalwas taken. It was found an excellent agreement between maxima of the crystalamorphization depth profile and maxima of the implanted aluminum concentrationdepth profile. This clearly indicates that μRS scanning technique could be used as anovel method for obtaining of the crystal amorphization depth profile induced by thehigh-energy ion implantation.
PB  - Универзитет у Београду, Електротехнички факултет
T2  - Универзитет у Београду
T1  - Имплантација јона у канале кристала силицијума
T1  - Ion implantation in the silicon crystal channels
UR  - https://hdl.handle.net/21.15107/rcub_nardus_2262
ER  - 

@phdthesis{
author = "Erić, Marko",
year = "2014",
abstract = "У овој докторској дисертацији предмети експерименталног итеоријског истраживања су: (1) одређивање дубинског профила концентрацијеазота у силицијуму изазваног имплантациом јона азота 14N2+, енергије 4 MeV, у<100> и <110> канале кристала силицијума и у случајно оријентисан кристалсилицијума, и (2) одређивање дубинског профила аморфизације кристаласилицијума изазваног имплантацијом јона алуминијума 27Al2+, енергије 6 MeV, у<110> канале кристала силицијума и случајно оријентисан кристал силицијума.У свим горе наведеним случајевима флуенс имплантираних јона је износио 1017јона/cm2.Дубинско профилисање азота извршено је користећи методануклеарних реакција (NRA) изучавањем 14N(d,α0)12C и 14N(d,α1)12C нуклеарнихреакција и применом SRIM 2010 и SIMNRA рачунарских програма. За случајнооријентисани кристал силицијума уочено је неслагање експерименталнодобијених и симулираних профила концентрације азота, и, у складу са тим,претпостављено је формирање “мехура” азота у силицијуму и одговарајућапромена густине кристала силицијума, као могуће објашњење овог неслагањаизмеђу експерименталних резултата и теорије. Поред тога, измерени суспектри Радерфордовог повратног расејања у каналисаном случају (RBS/C) наимплантираним и неимплантираним тачкама кристала силицијума. Овиспектри су заједно са добијеним дубинским профилима концентрације азотакоришћени за одређивање дубинског профила аморфизације кристаласилицијума изазваног имплантацијом јона азота.Дубински профил аморфизације кристала силицијума изазванимплантацијом јона алуминијума одређен је скенирајућим микро-Рамановиммерењем дуж трансверзалног попречног пресека имплантиране областиivкристала. Кораци скенирања су били 0,2 и 0,3 μm, за случај имплантације у<110> и случајно оријентисани кристал силицијума, респективно. Добијенирезултати су упоређени са одговарајућим RBS/C спектрима. Такође, снимљенесу SEM фотографије тарнсверзалног попречног пресека имплантиране областикристала силицијума у случају <110> кристала силицијума. Утврђено јеодлично поклапање максимума дубинског профила аморфизације кристаласилицијума са максимумом концентрације имплантираног алуминијума усилицијуму. Ово јасно показује да се скенирајућа микро-Рамановаспектроскопија може користити као нови метод у одређивању дубинскогпрофила аморфизације кристала која је изазвана високо енергијском јонскомимплантацијом., In this PhD thesis, the subjects of the experimental and theoretical researchare: (1) determination of the nitrogen depth profile of 4 MeV 14N2+ ions implanted inthe <100> and <110> channels of silicon crystals and in a randomly oriented siliconcrystal and (2) determination of the silicon crystal amorphization depth profileinduced by 6 MeV 27Al2+ ions in the <110> channels of silicon crystal and in arandomly oriented silicon crystal. In all of the above mentioned cases the fluence ofthe implanted ions was 1017 ions/ cm2.Nitrogen depth profiling was obtained applying the Nuclear ReactionAnalysis (NRA) method via study of 14N(d,α0)12C и 14N(d,α1)12C nuclear reactions andusing the SRIM 2010 and SIMNRA computer programs. In the case of the randomlyoriented silicon crystal pronounced difference between the experimentally obtainedand simulated nitrogen profiles was observed, and, with respect to that, formation ofthe nitrogen “bubble” in silicon and the corresponding change of the silicon densitywere assumed, as a possible explanation of that difference between the experimentalresults and theory. Additionally, Raderford Backscattering Spectrometry inchanneling mode (RBS/C) was performed on the implanted and virgin silicon crystalspots. Тhese spectra were used, together with the obtained concentration depthprofiles, for determination of the amorphization depth profiles of the silicon crystalsinduced by the nitrogen ions implantation.Silicon crystal amorphization depth profile induced by the aluminum ionsimplantation was obtained via micro-Raman Spectroscopy (μRS) scanningmeasurements of the crystal transversal cross section along the implanted region.Scanning steps were 0.2 μm and 0.3 μm for <110> and randomly oriented siliconcrystals, respectively. The obtained results were compared with the correspondingRBS/C spectra. Further, the Scanning Electron Microscopy (SEM) photograph of thevitransversal cross section of the implanted region for the case of <110> silicon crystalwas taken. It was found an excellent agreement between maxima of the crystalamorphization depth profile and maxima of the implanted aluminum concentrationdepth profile. This clearly indicates that μRS scanning technique could be used as anovel method for obtaining of the crystal amorphization depth profile induced by thehigh-energy ion implantation.",
publisher = "Универзитет у Београду, Електротехнички факултет",
journal = "Универзитет у Београду",
title = "Имплантација јона у канале кристала силицијума, Ion implantation in the silicon crystal channels",
url = "https://hdl.handle.net/21.15107/rcub_nardus_2262"
}

Erić, M.. (2014). Имплантација јона у канале кристала силицијума. in Универзитет у Београду
Универзитет у Београду, Електротехнички факултет..
https://hdl.handle.net/21.15107/rcub_nardus_2262

Erić M. Имплантација јона у канале кристала силицијума. in Универзитет у Београду. 2014;.
https://hdl.handle.net/21.15107/rcub_nardus_2262 .

Erić, Marko, "Имплантација јона у канале кристала силицијума" in Универзитет у Београду (2014),
https://hdl.handle.net/21.15107/rcub_nardus_2262 .

TY  - JOUR
AU  - Kopsalis, Ioannis
AU  - Paneta, Valentina
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Fazinić, Stjepko
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/158
AB  - The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.
T2  - Journal of Raman Spectroscopy
T1  - Probing high-energy ion-implanted silicon by micro-Raman spectroscopy
VL  - 45
IS  - 8
SP  - 650
EP  - 656
DO  - 10.1002/jrs.4507
ER  - 

@article{
author = "Kopsalis, Ioannis and Paneta, Valentina and Kokkoris, Michael and Liarokapis, Efthymios and Erich, Marko and Petrović, Srđan M. and Fazinić, Stjepko and Tadić, Tonči",
year = "2014",
abstract = "The effect of ion implantation (4MeV(12)C(2+), 5MeV(16)O(2+), and 8MeV(28)Si(2+)) on [110] silicon wafers in channeling and random orientation is investigated by micro-Raman spectroscopy. The profiles were measured using Scanning Electron Microscope (SEM) showing that the ions were penetrating deeper inside the wafer in the channeling case creating a 1-2 mu m wide strongly modified region and agreeing with the d-nuclear reaction analysis measurements. Micro-Raman spectroscopy was employed for the assessment of the lattice damage, probing the side surface of the cleaved wafers at submicron step. The phonon modifications show strong lattice distortions in zones parallel to the front surface of the wafers and at depths, which agree with the results of the characterization techniques. In these strongly damaged zones, there is a substantial reduction in the phonon intensity, a small shift in wavenumber position, and a large increase in the phonon width. On the basis of a modification of the phonon confinement model that takes under consideration the laser beam profile, the reduction in intensity of scattered light, and the nanocrystallite size distribution from the simulation of the lattice displacements, the main characteristics of the Raman spectra could be reproduced for the random C and O implantations. The results indicate that at a critical doping level, the induced defects and lattice distortions relax by breaking the silicon single crystal into nanocrystallites, thus creating the observed zones of strongly distorted lattice.",
journal = "Journal of Raman Spectroscopy",
title = "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy",
volume = "45",
number = "8",
pages = "650-656",
doi = "10.1002/jrs.4507"
}

Kopsalis, I., Paneta, V., Kokkoris, M., Liarokapis, E., Erich, M., Petrović, S. M., Fazinić, S.,& Tadić, T.. (2014). Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy, 45(8), 650-656.
https://doi.org/10.1002/jrs.4507

Kopsalis I, Paneta V, Kokkoris M, Liarokapis E, Erich M, Petrović SM, Fazinić S, Tadić T. Probing high-energy ion-implanted silicon by micro-Raman spectroscopy. in Journal of Raman Spectroscopy. 2014;45(8):650-656.
doi:10.1002/jrs.4507 .

Kopsalis, Ioannis, Paneta, Valentina, Kokkoris, Michael, Liarokapis, Efthymios, Erich, Marko, Petrović, Srđan M., Fazinić, Stjepko, Tadić, Tonči, "Probing high-energy ion-implanted silicon by micro-Raman spectroscopy" in Journal of Raman Spectroscopy, 45, no. 8 (2014):650-656,
https://doi.org/10.1002/jrs.4507 . .

TY  - JOUR
AU  - Paneta, Valentina
AU  - Erich, Marko
AU  - Fazinić, Stjepko
AU  - Kokkoris, Michael
AU  - Kopsalis, Ioannis
AU  - Petrović, Srđan M.
AU  - Tadić, Tonči
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5885
AB  - Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM
VL  - 320
SP  - 6
EP  - 11
DO  - 10.1016/j.nimb.2013.11.020
ER  - 

@article{
author = "Paneta, Valentina and Erich, Marko and Fazinić, Stjepko and Kokkoris, Michael and Kopsalis, Ioannis and Petrović, Srđan M. and Tadić, Tonči",
year = "2014",
abstract = "Ion implantation is one of the most important techniques used in the silicon-based semiconductor industry. Using the ion axial channeling effect, which occurs when an ion beam is oriented along a crystallographic axis, it is theoretically possible to implant ions deeper in the crystal, in comparison with the random ion beam-solid orientation, while - at the same time - minimizing the induced crystal lattice damage. In the present work, 4 MeV C-12(2+) and 5 MeV O-16(2+) ions were implanted in high-purity [1 1 0] Si crystal wafers at fluences of the order of similar to 10(17) particles/cm(2), in both the channeling and random orientations. The resulting profiles were measured using d-NRA, i.e. implementing the C-12(d,p(0)) and O-16(d,p(0),alpha(0)) reactions respectively, at E-d,E-lab = 1.2-1.4 MeV. The results were validated using SEM (Scanning Electron Microscopy), while the extent of crystalline damage was monitored during the implantation via RBS/C (Rutherford Backscattering Spectrometry/Channeling) spectra. The resulting profiles seem to be in good agreement with those obtained in the past for fluorine and nitrogen ions implanted in silicon, and clearly demonstrate the capabilities of high-energy channeling implantations, as well as, the accuracy of d-NRA (Nuclear Reaction Analysis) profiling measurements.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM",
volume = "320",
pages = "6-11",
doi = "10.1016/j.nimb.2013.11.020"
}

Paneta, V., Erich, M., Fazinić, S., Kokkoris, M., Kopsalis, I., Petrović, S. M.,& Tadić, T.. (2014). Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320, 6-11.
https://doi.org/10.1016/j.nimb.2013.11.020

Paneta V, Erich M, Fazinić S, Kokkoris M, Kopsalis I, Petrović SM, Tadić T. Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2014;320:6-11.
doi:10.1016/j.nimb.2013.11.020 .

Paneta, Valentina, Erich, Marko, Fazinić, Stjepko, Kokkoris, Michael, Kopsalis, Ioannis, Petrović, Srđan M., Tadić, Tonči, "Investigation of deep implanted carbon and oxygen channeling profiles in [110] silicon, using d-NRA and SEM" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 320 (2014):6-11,
https://doi.org/10.1016/j.nimb.2013.11.020 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Antonakos, Anastasios
AU  - Telečki, Igor N.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5393
AB  - In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.
T2  - Journal of Raman Spectroscopy
T1  - Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation
VL  - 44
IS  - 3
SP  - 496
EP  - 500
DO  - 10.1002/jrs.4211
ER  - 

@article{
author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Liarokapis, Efthymios and Antonakos, Anastasios and Telečki, Igor N.",
year = "2013",
abstract = "In this work, we study the silicon amorphization dependence on the crystal depth induced by 6-MeV Al2+ ions implanted in the LT 110 GT and randomly oriented silicon crystal channels, which was not directly experimentally accessible in the previous similar high-energy ioncrystal implantation cases. Accordingly, the micro-Raman spectroscopy scanning measurements along the crystal transversal cross section of the ion implanted region were performed. The ion fluence was 10(17) particles/cm(2). The scanning steps were 0.2 and 0.3 mu m, for the channeling and random ion implantations, respectively. The obtained results are compared with the corresponding Rutherford backscattering spectra of 1.2-MeV protons in the random and channeling orientations measured during the channeling implantation. Additionally, scanning electron microscope picture was taken on the transversal cross section of the implanted region in the channeling implantation case. We show here that the obtained silicon amorphization maxima are in excellent agreement with the corresponding estimated maxima of the aluminum concentration in silicon. This clearly indicates that the used specific micro-Raman spectroscopy scanning technique can be successfully applied for the depth profiling of the crystal amorphization induced by high-energy ion implantation.",
journal = "Journal of Raman Spectroscopy",
title = "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation",
volume = "44",
number = "3",
pages = "496-500",
doi = "10.1002/jrs.4211"
}

Erich, M., Petrović, S. M., Kokkoris, M., Liarokapis, E., Antonakos, A.,& Telečki, I. N.. (2013). Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy, 44(3), 496-500.
https://doi.org/10.1002/jrs.4211

Erich M, Petrović SM, Kokkoris M, Liarokapis E, Antonakos A, Telečki IN. Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation. in Journal of Raman Spectroscopy. 2013;44(3):496-500.
doi:10.1002/jrs.4211 .

Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Liarokapis, Efthymios, Antonakos, Anastasios, Telečki, Igor N., "Micro-Raman depth profiling of silicon amorphization induced by high-energy ion channeling implantation" in Journal of Raman Spectroscopy, 44, no. 3 (2013):496-500,
https://doi.org/10.1002/jrs.4211 . .

TY  - JOUR
AU  - Erich, Marko
AU  - Petrović, Srđan M.
AU  - Kokkoris, Michael
AU  - Lagoyannis, Anastasios
AU  - Paneta, Valentina
AU  - Harissopulos, S.
AU  - Telečki, Igor N.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4749
AB  - This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals
VL  - 274
SP  - 87
EP  - 92
DO  - 10.1016/j.nimb.2011.12.008
ER  - 

@article{
author = "Erich, Marko and Petrović, Srđan M. and Kokkoris, Michael and Lagoyannis, Anastasios and Paneta, Valentina and Harissopulos, S. and Telečki, Igor N.",
year = "2012",
abstract = "This work reports on the experimentally obtained depth profiles of 4 MeV N-14(2+) ions implanted in the (100), (110) and randomly oriented silicon crystals. The ion fluence was 10(17) particles/cm(2), The nitrogen depth profiling has been performed using the Nuclear Reaction Analysis (NRA) method, via the study of N-14(d,alpha(0))C-12 and N-14(d,alpha(1))C-12 nuclear reactions, and with the implementation of SRIM 2010 and SIMNRA computer simulation codes. For the randomly oriented silicon crystal, change of the density of silicon matrix and the nitrogen bubble formation have been proposed as the explanation for the difference between the experimental and simulated nitrogen depth profiles. During the implantation, the RBS/C spectra were measured on the nitrogen implanted and on the virgin crystal spots. These spectra provide information on the amorphization of the silicon crystals induced by the ion implantation.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals",
volume = "274",
pages = "87-92",
doi = "10.1016/j.nimb.2011.12.008"
}

Erich, M., Petrović, S. M., Kokkoris, M., Lagoyannis, A., Paneta, V., Harissopulos, S.,& Telečki, I. N.. (2012). Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274, 87-92.
https://doi.org/10.1016/j.nimb.2011.12.008

Erich M, Petrović SM, Kokkoris M, Lagoyannis A, Paneta V, Harissopulos S, Telečki IN. Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2012;274:87-92.
doi:10.1016/j.nimb.2011.12.008 .

Erich, Marko, Petrović, Srđan M., Kokkoris, Michael, Lagoyannis, Anastasios, Paneta, Valentina, Harissopulos, S., Telečki, Igor N., "Depth profiling of high energy nitrogen ions implanted in the (100), (110) and randomly oriented silicon crystals" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 274 (2012):87-92,
https://doi.org/10.1016/j.nimb.2011.12.008 . .

TY  - JOUR
AU  - Jovanović, Zoran M.
AU  - Kalijadis, Ana
AU  - Vasiljević-Radović, Dana
AU  - Erich, Marko
AU  - Laušević, Mila D.
AU  - Mentus, Slavko V.
AU  - Laušević, Zoran
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4455
AB  - Glassy carbon plates were irradiated with 15 key H(+) ion-beam in the fluence range of 1 x 10(16)-3 x 10(18) ion cm(-2). The influence of ion irradiation on surface morphology and topology was examined by scanning electron and atomic force microscopy. Structural changes were monitored by Raman spectrometry, while changes of wettability and the content of surface oxygen complexes were examined by contact angle measurements and temperature programmed desorption. Elastic recoil detection analysis was applied for determination of hydrogen concentration profiles in irradiated samples. Cyclic voltammetry was used for the assessment of the electrochemical properties of modified glassy carbon electrodes. It was concluded that there is critical fluence range (2 x 10(17)-5 x 10(17) ion cm(-2)) inside of which significant changes of glassy carbon properties occur. (C) 2011 Elsevier Ltd. All rights reserved.
T2  - Carbon
T1  - Modification of glassy carbon properties under low energy proton irradiation
VL  - 49
IS  - 12
SP  - 3737
EP  - 3746
DO  - 10.1016/j.carbon.2011.05.006
ER  - 

@article{
author = "Jovanović, Zoran M. and Kalijadis, Ana and Vasiljević-Radović, Dana and Erich, Marko and Laušević, Mila D. and Mentus, Slavko V. and Laušević, Zoran",
year = "2011",
abstract = "Glassy carbon plates were irradiated with 15 key H(+) ion-beam in the fluence range of 1 x 10(16)-3 x 10(18) ion cm(-2). The influence of ion irradiation on surface morphology and topology was examined by scanning electron and atomic force microscopy. Structural changes were monitored by Raman spectrometry, while changes of wettability and the content of surface oxygen complexes were examined by contact angle measurements and temperature programmed desorption. Elastic recoil detection analysis was applied for determination of hydrogen concentration profiles in irradiated samples. Cyclic voltammetry was used for the assessment of the electrochemical properties of modified glassy carbon electrodes. It was concluded that there is critical fluence range (2 x 10(17)-5 x 10(17) ion cm(-2)) inside of which significant changes of glassy carbon properties occur. (C) 2011 Elsevier Ltd. All rights reserved.",
journal = "Carbon",
title = "Modification of glassy carbon properties under low energy proton irradiation",
volume = "49",
number = "12",
pages = "3737-3746",
doi = "10.1016/j.carbon.2011.05.006"
}

Jovanović, Z. M., Kalijadis, A., Vasiljević-Radović, D., Erich, M., Laušević, M. D., Mentus, S. V.,& Laušević, Z.. (2011). Modification of glassy carbon properties under low energy proton irradiation. in Carbon, 49(12), 3737-3746.
https://doi.org/10.1016/j.carbon.2011.05.006

Jovanović ZM, Kalijadis A, Vasiljević-Radović D, Erich M, Laušević MD, Mentus SV, Laušević Z. Modification of glassy carbon properties under low energy proton irradiation. in Carbon. 2011;49(12):3737-3746.
doi:10.1016/j.carbon.2011.05.006 .

Jovanović, Zoran M., Kalijadis, Ana, Vasiljević-Radović, Dana, Erich, Marko, Laušević, Mila D., Mentus, Slavko V., Laušević, Zoran, "Modification of glassy carbon properties under low energy proton irradiation" in Carbon, 49, no. 12 (2011):3737-3746,
https://doi.org/10.1016/j.carbon.2011.05.006 . .