TY  - JOUR
AU  - Pjević, Dejan J.
AU  - Obradović, Marko O.
AU  - Marinković, Tijana
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Grieseler, Rolf
AU  - Kups, Thomas
AU  - Wilke, Marcus
AU  - Schaaf, Peter
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/436
AB  - The influence of sputtering parameters and annealing on the structure and optical properties of TiO2 thin films deposited by RF magnetron sputtering is reported. A pure TiO2 target was used to deposit the films on Si(100) and glass substrates, and Ar/O-2 gas mixture was used for sputtering. It was found that both the structure and the optical properties of the films depend on deposition parameters and annealing. In all cases the as deposited films were oxygen deficient, which could be compensated by post deposition annealing. Changes in the Ar/O-2 mass flow rate affected the films from an amorphous like structure for samples deposited without oxygen to a structure where nano crystalline Futile phase is detected in those deposited with O-2. Annealing of the samples yielded growth of both, ruffle and anatase phases, the ratio depending on the added oxygen content. Increasing mass flow rate of O-2 and annealing are responsible for lowering of the energy band gap values and the increase in refractive index of the films. The results can be interesting towards the development of TiO2 thin films with defined structure and properties. (C) 2015 Elsevier EN. All rights reserved.
T2  - Physica B: Condensed Matter
T1  - Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters
VL  - 463
SP  - 20
EP  - 25
DO  - 10.1016/j.physb.2015.01.037
ER  - 

@article{
author = "Pjević, Dejan J. and Obradović, Marko O. and Marinković, Tijana and Grce, Ana and Milosavljević, Momir and Grieseler, Rolf and Kups, Thomas and Wilke, Marcus and Schaaf, Peter",
year = "2015",
abstract = "The influence of sputtering parameters and annealing on the structure and optical properties of TiO2 thin films deposited by RF magnetron sputtering is reported. A pure TiO2 target was used to deposit the films on Si(100) and glass substrates, and Ar/O-2 gas mixture was used for sputtering. It was found that both the structure and the optical properties of the films depend on deposition parameters and annealing. In all cases the as deposited films were oxygen deficient, which could be compensated by post deposition annealing. Changes in the Ar/O-2 mass flow rate affected the films from an amorphous like structure for samples deposited without oxygen to a structure where nano crystalline Futile phase is detected in those deposited with O-2. Annealing of the samples yielded growth of both, ruffle and anatase phases, the ratio depending on the added oxygen content. Increasing mass flow rate of O-2 and annealing are responsible for lowering of the energy band gap values and the increase in refractive index of the films. The results can be interesting towards the development of TiO2 thin films with defined structure and properties. (C) 2015 Elsevier EN. All rights reserved.",
journal = "Physica B: Condensed Matter",
title = "Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters",
volume = "463",
pages = "20-25",
doi = "10.1016/j.physb.2015.01.037"
}

Pjević, D. J., Obradović, M. O., Marinković, T., Grce, A., Milosavljević, M., Grieseler, R., Kups, T., Wilke, M.,& Schaaf, P.. (2015). Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters. in Physica B: Condensed Matter, 463, 20-25.
https://doi.org/10.1016/j.physb.2015.01.037

Pjević DJ, Obradović MO, Marinković T, Grce A, Milosavljević M, Grieseler R, Kups T, Wilke M, Schaaf P. Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters. in Physica B: Condensed Matter. 2015;463:20-25.
doi:10.1016/j.physb.2015.01.037 .

Pjević, Dejan J., Obradović, Marko O., Marinković, Tijana, Grce, Ana, Milosavljević, Momir, Grieseler, Rolf, Kups, Thomas, Wilke, Marcus, Schaaf, Peter, "Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters" in Physica B: Condensed Matter, 463 (2015):20-25,
https://doi.org/10.1016/j.physb.2015.01.037 . .

TY  - JOUR
AU  - Cizmovic, M.
AU  - Kovač, Janez
AU  - Milosavljević, Momir
AU  - Petrović, Suzana
AU  - Dražić, Goran
AU  - Mitrić, Miodrag
AU  - Obradović, Marko O.
AU  - Schaaf, P.
AU  - Peruško, Davor
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7016
AB  - Structural and compositional modifications of multilayered Al/Ti nano-structures induced by nanosecond laser pulses were investigated. Five and ten (Al/Ti) bilayers, with total thicknesses of 130 and 260 nm, respectively, were deposited by dc ion sputtering onto (100) Si wafers. The structures were irradiated in air with nanosecond Nd:YAG unfocused laser pulses. Characterizations of the samples were performed by x-ray diffraction analysis, Auger electron spectroscopy, atomic force microscopy and transmission electron microscopy. It was found that laser treatment of both structures induced complete intermixing of all deposited metallic films, their mixing with silicon substrate and formation of Al-Ti intermetallic and silicide compounds. This effect was achieved even for one applied laser pulse. Comparing these results with that for picosecond laser treatment of similar multilayered structures, it was concluded that materials involved within the heat diffusion length participated in the formation of new phases.
T2  - Physica Scripta
T1  - Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses
VL  - T157
DO  - 10.1088/0031-8949/2013/T157/014008
ER  - 

@article{
author = "Cizmovic, M. and Kovač, Janez and Milosavljević, Momir and Petrović, Suzana and Dražić, Goran and Mitrić, Miodrag and Obradović, Marko O. and Schaaf, P. and Peruško, Davor",
year = "2013",
abstract = "Structural and compositional modifications of multilayered Al/Ti nano-structures induced by nanosecond laser pulses were investigated. Five and ten (Al/Ti) bilayers, with total thicknesses of 130 and 260 nm, respectively, were deposited by dc ion sputtering onto (100) Si wafers. The structures were irradiated in air with nanosecond Nd:YAG unfocused laser pulses. Characterizations of the samples were performed by x-ray diffraction analysis, Auger electron spectroscopy, atomic force microscopy and transmission electron microscopy. It was found that laser treatment of both structures induced complete intermixing of all deposited metallic films, their mixing with silicon substrate and formation of Al-Ti intermetallic and silicide compounds. This effect was achieved even for one applied laser pulse. Comparing these results with that for picosecond laser treatment of similar multilayered structures, it was concluded that materials involved within the heat diffusion length participated in the formation of new phases.",
journal = "Physica Scripta",
title = "Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses",
volume = "T157",
doi = "10.1088/0031-8949/2013/T157/014008"
}

Cizmovic, M., Kovač, J., Milosavljević, M., Petrović, S., Dražić, G., Mitrić, M., Obradović, M. O., Schaaf, P.,& Peruško, D.. (2013). Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses. in Physica Scripta, T157.
https://doi.org/10.1088/0031-8949/2013/T157/014008

Cizmovic M, Kovač J, Milosavljević M, Petrović S, Dražić G, Mitrić M, Obradović MO, Schaaf P, Peruško D. Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses. in Physica Scripta. 2013;T157.
doi:10.1088/0031-8949/2013/T157/014008 .

Cizmovic, M., Kovač, Janez, Milosavljević, Momir, Petrović, Suzana, Dražić, Goran, Mitrić, Miodrag, Obradović, Marko O., Schaaf, P., Peruško, Davor, "Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses" in Physica Scripta, T157 (2013),
https://doi.org/10.1088/0031-8949/2013/T157/014008 . .

TY  - CONF
AU  - Bibić, Nataša
AU  - Milosavljević, M.
AU  - Milinović, Velimir
AU  - Šiljegović, M.
AU  - Peruško, Davor
AU  - Schaaf, P.
AU  - Lieb, K. P.
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12893
AB  - In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.
C3  - SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers
T1  - Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers
SP  - 73
EP  - 73
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12893
ER  - 

@conference{
author = "Bibić, Nataša and Milosavljević, M. and Milinović, Velimir and Šiljegović, M. and Peruško, Davor and Schaaf, P. and Lieb, K. P.",
year = "2004",
abstract = "In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.",
journal = "SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers",
title = "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers",
pages = "73-73",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12893"
}

Bibić, N., Milosavljević, M., Milinović, V., Šiljegović, M., Peruško, D., Schaaf, P.,& Lieb, K. P.. (2004). Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers, 73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893

Bibić N, Milosavljević M, Milinović V, Šiljegović M, Peruško D, Schaaf P, Lieb KP. Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers. 2004;:73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893 .

Bibić, Nataša, Milosavljević, M., Milinović, Velimir, Šiljegović, M., Peruško, Davor, Schaaf, P., Lieb, K. P., "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers" in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers (2004):73-73,
https://hdl.handle.net/21.15107/rcub_vinar_12893 .

TY  - JOUR
AU  - Milinović, Velimir
AU  - Bibić, Nataša M.
AU  - Dhar, S
AU  - Šiljegović, Milorad
AU  - Schaaf, P
AU  - Lieb, KP
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2813
AB  - In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV N-14(2+) ion implantation in Fe-57(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mossbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2x10(17) ions/cm(2). When heating these samples in vacuo up to 700degreesC, the iron-rich phases Eepsilon-Fe3N and gamma-Fe4N were produced. Starting at 600degreesC the silicide phase beta-FeSi2 was also identified.
T2  - Applied Physics. A: Materials Science and Processing
T1  - Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation
VL  - 79
IS  - 8
SP  - 2093
EP  - 2097
DO  - 10.1007/s00339-004-2889-2
ER  - 

@article{
author = "Milinović, Velimir and Bibić, Nataša M. and Dhar, S and Šiljegović, Milorad and Schaaf, P and Lieb, KP",
year = "2004",
abstract = "In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV N-14(2+) ion implantation in Fe-57(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mossbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2x10(17) ions/cm(2). When heating these samples in vacuo up to 700degreesC, the iron-rich phases Eepsilon-Fe3N and gamma-Fe4N were produced. Starting at 600degreesC the silicide phase beta-FeSi2 was also identified.",
journal = "Applied Physics. A: Materials Science and Processing",
title = "Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation",
volume = "79",
number = "8",
pages = "2093-2097",
doi = "10.1007/s00339-004-2889-2"
}

Milinović, V., Bibić, N. M., Dhar, S., Šiljegović, M., Schaaf, P.,& Lieb, K.. (2004). Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation. in Applied Physics. A: Materials Science and Processing, 79(8), 2093-2097.
https://doi.org/10.1007/s00339-004-2889-2

Milinović V, Bibić NM, Dhar S, Šiljegović M, Schaaf P, Lieb K. Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation. in Applied Physics. A: Materials Science and Processing. 2004;79(8):2093-2097.
doi:10.1007/s00339-004-2889-2 .

Milinović, Velimir, Bibić, Nataša M., Dhar, S, Šiljegović, Milorad, Schaaf, P, Lieb, KP, "Nitrogen irradiation of Fe/Si bilayers: nitride versus silicide phase formation" in Applied Physics. A: Materials Science and Processing, 79, no. 8 (2004):2093-2097,
https://doi.org/10.1007/s00339-004-2889-2 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Milinović, Velimir
AU  - Dhar, S
AU  - Lieb, KP
AU  - Milosavljević, Momir
AU  - Šiljegović, Milorad
AU  - Peruško, Davor
AU  - Schaaf, P
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6451
AB  - This article reports on the formation of iron nitrides during nitrogen ion irradiation of Fe/Si bilayers at room temperature. The 30 nm Fe-57/Si bilayers were prepared by pulsed laser ablation and irradiated with 22 keV N2+ ions at fluences of (0.6-2)x 10(17) ions/cm(2). The structural changes and phases formed by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analysis (XRD) and conversion electron Mossbauer spectroscopy (CEMS). The results clearly show the formation of several iron nitrides. At the lower fluences, the samples contain a mixture of epsilon-Fe2+x N and alpha-Fe with nitrogen interstitials. For the highest fluence, the paramagnetic epsilon-Fe-2 N (61%) phase predominated. It can be concluded that the elemental iron almost fully transforms to an iron-nitride layer, but that no iron silicides are formed. (C) 2003 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions
VL  - 459
IS  - 1-2
SP  - 23
EP  - 27
DO  - 10.1016/j.tsf.2003.12.077
ER  - 

@article{
author = "Bibić, Nataša M. and Milinović, Velimir and Dhar, S and Lieb, KP and Milosavljević, Momir and Šiljegović, Milorad and Peruško, Davor and Schaaf, P",
year = "2004",
abstract = "This article reports on the formation of iron nitrides during nitrogen ion irradiation of Fe/Si bilayers at room temperature. The 30 nm Fe-57/Si bilayers were prepared by pulsed laser ablation and irradiated with 22 keV N2+ ions at fluences of (0.6-2)x 10(17) ions/cm(2). The structural changes and phases formed by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analysis (XRD) and conversion electron Mossbauer spectroscopy (CEMS). The results clearly show the formation of several iron nitrides. At the lower fluences, the samples contain a mixture of epsilon-Fe2+x N and alpha-Fe with nitrogen interstitials. For the highest fluence, the paramagnetic epsilon-Fe-2 N (61%) phase predominated. It can be concluded that the elemental iron almost fully transforms to an iron-nitride layer, but that no iron silicides are formed. (C) 2003 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions",
volume = "459",
number = "1-2",
pages = "23-27",
doi = "10.1016/j.tsf.2003.12.077"
}

Bibić, N. M., Milinović, V., Dhar, S., Lieb, K., Milosavljević, M., Šiljegović, M., Peruško, D.,& Schaaf, P.. (2004). Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions. in Thin Solid Films, 459(1-2), 23-27.
https://doi.org/10.1016/j.tsf.2003.12.077

Bibić NM, Milinović V, Dhar S, Lieb K, Milosavljević M, Šiljegović M, Peruško D, Schaaf P. Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions. in Thin Solid Films. 2004;459(1-2):23-27.
doi:10.1016/j.tsf.2003.12.077 .

Bibić, Nataša M., Milinović, Velimir, Dhar, S, Lieb, KP, Milosavljević, Momir, Šiljegović, Milorad, Peruško, Davor, Schaaf, P, "Formation of iron-nitrides by irradiation of Fe-57/Si bilayers with N2+ ions" in Thin Solid Films, 459, no. 1-2 (2004):23-27,
https://doi.org/10.1016/j.tsf.2003.12.077 . .

TY  - JOUR
AU  - Dhar, S
AU  - Schaaf, P
AU  - Lieb, KP
AU  - Bibić, Nataša M.
AU  - Milosavljević, Momir
AU  - Sajavaara, T
AU  - Keinonen, J
AU  - Traverse, A
PY  - 2003
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6364
AB  - Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges
VL  - 205
SP  - 741
EP  - 745
DO  - 10.1016/S0168-583X(03)00578-0
ER  - 

@article{
author = "Dhar, S and Schaaf, P and Lieb, KP and Bibić, Nataša M. and Milosavljević, Momir and Sajavaara, T and Keinonen, J and Traverse, A",
year = "2003",
abstract = "Thin Fe and Ta layers of 30-45 nm thickness, deposited via magnetron sputtering on Si (100) substrates, were bombarded at room temperature with 100 kev Ar1+ or Ar8+ or with 250 keV Xe1+ or Xe19+ ions in order to test the influence of the ion charge state on the surface sputtering and interface mixing. The samples were characterized by means of Rutherford backscattering at 0.9-3.0 MeV alpha-particle energy, time-of-flight elastic recoil detection analysis with a 53 MeV 127I(10+) beam and atomic force microscopy, No influence of the charge state on the sputtering and athermal mixing rate was observed in the case of the Ta/Si system. However, in the case of the Fe/Si system, the ion charge was observed to have an influence on the mixing rate. (C) 2003 Elsevier Science B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges",
volume = "205",
pages = "741-745",
doi = "10.1016/S0168-583X(03)00578-0"
}

Dhar, S., Schaaf, P., Lieb, K., Bibić, N. M., Milosavljević, M., Sajavaara, T., Keinonen, J.,& Traverse, A.. (2003). Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 205, 741-745.
https://doi.org/10.1016/S0168-583X(03)00578-0

Dhar S, Schaaf P, Lieb K, Bibić NM, Milosavljević M, Sajavaara T, Keinonen J, Traverse A. Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2003;205:741-745.
doi:10.1016/S0168-583X(03)00578-0 .

Dhar, S, Schaaf, P, Lieb, KP, Bibić, Nataša M., Milosavljević, Momir, Sajavaara, T, Keinonen, J, Traverse, A, "Ion beam mixing in Fe/Si and Ta/Si bilayers: Possible effects of ion charges" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 205 (2003):741-745,
https://doi.org/10.1016/S0168-583X(03)00578-0 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Dhar, S
AU  - Lieb, KP
AU  - Milosavljević, Momir
AU  - Schaaf, P
AU  - Huang, YL
AU  - Seibt, M
AU  - Homewood, Kevin P.
AU  - McKinty, C
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6340
AB  - This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions. By irradiation of 35 nm Fe on Si, at 600 degreesC with 205 keV Xe to 2 X 10(16) ions/cm(2), the formation of similar to 105 nm single-phase beta-FeSi(2) layers was achieved. Their structures were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectroscopy, high resolution transmission electron microscopy, and photo-absorption. The structural analyses revealed that the beta-FeSi(2) layers grow in the form of irregularly shaped crystal grains, with a pronounced surface morphology, but with a rather sharp silicide/silicon interface. The grains that originate from the interface are epitaxially oriented relative to the Si(100) substrate. Optical absorption, as compared with that in beta-FeSi(2) layers produced by ion beam synthesis or co-sputter deposition, indicates a direct band gap of 0.92 eV A pronounced surface roughness of the ion beam mixed layers yielded photo-absorption approximately three times higher as compared with the other two sets of samples. The band gap stays nearly constant over the temperature range from 80 to 295 K. This is tentatively assigned to a high degree of structural disorder and stress induced in the ion beam mixed beta-FeSi(2) layers. (C) 2002 Elsevier Science B.V. All rights reserved.
T2  - Surface and Coatings Technology
T1  - Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing
VL  - 158
SP  - 198
EP  - 202
DO  - 10.1016/S0257-8972(02)00205-0
ER  - 

@article{
author = "Bibić, Nataša M. and Dhar, S and Lieb, KP and Milosavljević, Momir and Schaaf, P and Huang, YL and Seibt, M and Homewood, Kevin P. and McKinty, C",
year = "2002",
abstract = "This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions. By irradiation of 35 nm Fe on Si, at 600 degreesC with 205 keV Xe to 2 X 10(16) ions/cm(2), the formation of similar to 105 nm single-phase beta-FeSi(2) layers was achieved. Their structures were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectroscopy, high resolution transmission electron microscopy, and photo-absorption. The structural analyses revealed that the beta-FeSi(2) layers grow in the form of irregularly shaped crystal grains, with a pronounced surface morphology, but with a rather sharp silicide/silicon interface. The grains that originate from the interface are epitaxially oriented relative to the Si(100) substrate. Optical absorption, as compared with that in beta-FeSi(2) layers produced by ion beam synthesis or co-sputter deposition, indicates a direct band gap of 0.92 eV A pronounced surface roughness of the ion beam mixed layers yielded photo-absorption approximately three times higher as compared with the other two sets of samples. The band gap stays nearly constant over the temperature range from 80 to 295 K. This is tentatively assigned to a high degree of structural disorder and stress induced in the ion beam mixed beta-FeSi(2) layers. (C) 2002 Elsevier Science B.V. All rights reserved.",
journal = "Surface and Coatings Technology",
title = "Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing",
volume = "158",
pages = "198-202",
doi = "10.1016/S0257-8972(02)00205-0"
}

Bibić, N. M., Dhar, S., Lieb, K., Milosavljević, M., Schaaf, P., Huang, Y., Seibt, M., Homewood, K. P.,& McKinty, C.. (2002). Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing. in Surface and Coatings Technology, 158, 198-202.
https://doi.org/10.1016/S0257-8972(02)00205-0

Bibić NM, Dhar S, Lieb K, Milosavljević M, Schaaf P, Huang Y, Seibt M, Homewood KP, McKinty C. Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing. in Surface and Coatings Technology. 2002;158:198-202.
doi:10.1016/S0257-8972(02)00205-0 .

Bibić, Nataša M., Dhar, S, Lieb, KP, Milosavljević, Momir, Schaaf, P, Huang, YL, Seibt, M, Homewood, Kevin P., McKinty, C, "Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing" in Surface and Coatings Technology, 158 (2002):198-202,
https://doi.org/10.1016/S0257-8972(02)00205-0 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Dhar, S
AU  - Schaaf, P
AU  - Bibić, Nataša M.
AU  - Huang, YL
AU  - Seibt, M
AU  - Lieb, KP
PY  - 2001
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2470
AB  - A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics.
T2  - Journal of Applied Physics
T1  - Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers
VL  - 90
IS  - 9
SP  - 4474
EP  - 4484
DO  - 10.1063/1.1405818
ER  - 

@article{
author = "Milosavljević, Momir and Dhar, S and Schaaf, P and Bibić, Nataša M. and Huang, YL and Seibt, M and Lieb, KP",
year = "2001",
abstract = "A detailed study of the formation of beta -FeSi2 films by ion-beam mixing of Fe/Si bilayers with noble gas ions is presented. Fe films of 35-50 nm deposited on Si (100) were irradiated with 80-700 keV Ar, Kr, or Xe ions in a wide temperature interval, from room temperature to 600 degreesC. The structures were analyzed by Rutherford backscattering spectroscopy, x-ray diffraction, conversion electron Mossbauer spectroscopy, elastic recoil detection analysis, cross-section high resolution transmission electron microscopy, and energy dispersive x-ray spectroscopy. Already after Xe irradiation at 300 degreesC the whole Fe layer is transformed to a mixture of Fe3Si, epsilon -FeSi, and beta -FeSi2 phases. At 400-450 degreesC, a unique, layer by layer growth of beta -FeSi2 starting from the surface was found. A full transformation of 35 nm Fe on Si to a 105 nm beta -FeSi2 layer was achieved by irradiation with 205 keV Xe to 2x10(16) ions/cm(2), at a temperature of 600 degreesC. The fully ion-beam grown layers exhibit a pronounced surface roughness, but a sharp interface to Si. This structure is assigned to a growth of beta -FeSi2 grains in a local surrounding of interdiffused silicon. Rapid diffusion of silicon to the surface was observed during all ion irradiations. Single-phase beta -FeSi2 layers were also synthesized by vacuum annealing for 2 h at 600 degreesC of 35 nm Fe/Si bilayers premixed with Xe at 450 degreesC. In this case, the layers form with a smoother surface topography. It is concluded that ion-beam mixing can be used successfully for growth of beta -FeSi2 layers at moderate temperatures, either directly or combined with postirradiation annealing. (C) 2001 American Institute of Physics.",
journal = "Journal of Applied Physics",
title = "Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers",
volume = "90",
number = "9",
pages = "4474-4484",
doi = "10.1063/1.1405818"
}

Milosavljević, M., Dhar, S., Schaaf, P., Bibić, N. M., Huang, Y., Seibt, M.,& Lieb, K.. (2001). Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers. in Journal of Applied Physics, 90(9), 4474-4484.
https://doi.org/10.1063/1.1405818

Milosavljević M, Dhar S, Schaaf P, Bibić NM, Huang Y, Seibt M, Lieb K. Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers. in Journal of Applied Physics. 2001;90(9):4474-4484.
doi:10.1063/1.1405818 .

Milosavljević, Momir, Dhar, S, Schaaf, P, Bibić, Nataša M., Huang, YL, Seibt, M, Lieb, KP, "Growth of beta-FeSi2 films via noble-gas ion-beam mixing of Fe/Si bilayers" in Journal of Applied Physics, 90, no. 9 (2001):4474-4484,
https://doi.org/10.1063/1.1405818 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Dhar, S
AU  - Schaaf, P
AU  - Bibić, Nataša M.
AU  - Han, M
AU  - Lieb, KP
PY  - 2000
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2366
AB  - The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.
T2  - Applied Physics. A: Materials Science and Processing
T1  - Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers
VL  - 71
IS  - 1
SP  - 43
EP  - 45
UR  - https://hdl.handle.net/21.15107/rcub_vinar_2366
ER  - 

@article{
author = "Milosavljević, Momir and Dhar, S and Schaaf, P and Bibić, Nataša M. and Han, M and Lieb, KP",
year = "2000",
abstract = "The iron di-silicide beta-FeSi2 is a promising direct band gap semiconductor but difficult to produce. Here, the successful direct synthesis of this phase by ion beam mixing of Fe/Si bilayers at temperatures in the range of 450 to 550 degrees C is reported. The obtained single-phase beta-FeSi2 layers and their structure are confirmed by Rutherford backscattering spectrometry, X-ray diffraction and conversion electron Mossbauer spectroscopy. PACS: 61.80.Jh; 68.55.Nq; 61.82.Fk.",
journal = "Applied Physics. A: Materials Science and Processing",
title = "Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers",
volume = "71",
number = "1",
pages = "43-45",
url = "https://hdl.handle.net/21.15107/rcub_vinar_2366"
}

Milosavljević, M., Dhar, S., Schaaf, P., Bibić, N. M., Han, M.,& Lieb, K.. (2000). Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers. in Applied Physics. A: Materials Science and Processing, 71(1), 43-45.
https://hdl.handle.net/21.15107/rcub_vinar_2366

Milosavljević M, Dhar S, Schaaf P, Bibić NM, Han M, Lieb K. Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers. in Applied Physics. A: Materials Science and Processing. 2000;71(1):43-45.
https://hdl.handle.net/21.15107/rcub_vinar_2366 .

Milosavljević, Momir, Dhar, S, Schaaf, P, Bibić, Nataša M., Han, M, Lieb, KP, "Direct synthesis of beta-FeSi2 by ion beam mixing of Fe/Si bilayers" in Applied Physics. A: Materials Science and Processing, 71, no. 1 (2000):43-45,
https://hdl.handle.net/21.15107/rcub_vinar_2366 .