Milosavljević, M.

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  • Milosavljević, M. (9)
Projects

Author's Bibliography

Degradation of the output electrical characteristics of si solar cells as a result of ionizing radiation under low light conditions

Stojanović, N.; Osmokrović, Predrag; Stojanović, M.; Milosavljević, M.; Stamenić, Ljubisav

(IEEE : Institute of Electrical and Electronics Engineers, 2011)

TY  - CONF
AU  - Stojanović, N.
AU  - Osmokrović, Predrag
AU  - Stojanović, M.
AU  - Milosavljević, M.
AU  - Stamenić, Ljubisav
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12459
AB  - This paper presents results of our investigation of radiation resistance of different types of commercially available single and poly crystalline silicon solar cells. Sample cells were subjected to gamma radiation from gamma radiation source (Co60). Characteristic parameters of solar cells were extracted from obtained I-V curves: open circuit voltage, short circuit current, maximum power point voltage and current, efficiency, fill factor and series resistance. Obtained results could lead to novel designs of silicon solar cells with purpose of increasing their possible applications in radiation environments.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - RADECS 2011 : 12th European Conference on Radiation and Its Effects on Components and Systems : Proceedings
T1  - Degradation of the output electrical characteristics of si solar cells as a result of ionizing radiation under low light conditions
SP  - 837
EP  - 838
DO  - 10.1109/RADECS.2011.6131343
ER  - 
@conference{
author = "Stojanović, N. and Osmokrović, Predrag and Stojanović, M. and Milosavljević, M. and Stamenić, Ljubisav",
year = "2011",
abstract = "This paper presents results of our investigation of radiation resistance of different types of commercially available single and poly crystalline silicon solar cells. Sample cells were subjected to gamma radiation from gamma radiation source (Co60). Characteristic parameters of solar cells were extracted from obtained I-V curves: open circuit voltage, short circuit current, maximum power point voltage and current, efficiency, fill factor and series resistance. Obtained results could lead to novel designs of silicon solar cells with purpose of increasing their possible applications in radiation environments.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "RADECS 2011 : 12th European Conference on Radiation and Its Effects on Components and Systems : Proceedings",
title = "Degradation of the output electrical characteristics of si solar cells as a result of ionizing radiation under low light conditions",
pages = "837-838",
doi = "10.1109/RADECS.2011.6131343"
}
Stojanović, N., Osmokrović, P., Stojanović, M., Milosavljević, M.,& Stamenić, L.. (2011). Degradation of the output electrical characteristics of si solar cells as a result of ionizing radiation under low light conditions. in RADECS 2011 : 12th European Conference on Radiation and Its Effects on Components and Systems : Proceedings
IEEE : Institute of Electrical and Electronics Engineers., 837-838.
https://doi.org/10.1109/RADECS.2011.6131343
Stojanović N, Osmokrović P, Stojanović M, Milosavljević M, Stamenić L. Degradation of the output electrical characteristics of si solar cells as a result of ionizing radiation under low light conditions. in RADECS 2011 : 12th European Conference on Radiation and Its Effects on Components and Systems : Proceedings. 2011;:837-838.
doi:10.1109/RADECS.2011.6131343 .
Stojanović, N., Osmokrović, Predrag, Stojanović, M., Milosavljević, M., Stamenić, Ljubisav, "Degradation of the output electrical characteristics of si solar cells as a result of ionizing radiation under low light conditions" in RADECS 2011 : 12th European Conference on Radiation and Its Effects on Components and Systems : Proceedings (2011):837-838,
https://doi.org/10.1109/RADECS.2011.6131343 . .

Effects of ion implantation on properties of TiN layers

Popović, Maja; Novaković, Mirjana; Peruško, Davor; Radović, Ivan; Mitrić, M.; Milosavljević, M.

(Belgrade : Serbian Society for Microscopy : Vinča Institute of Nuclear Sciences : Faculty of Biology, 2007)

TY  - CONF
AU  - Popović, Maja
AU  - Novaković, Mirjana
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Mitrić, M.
AU  - Milosavljević, M.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12891
PB  - Belgrade : Serbian Society for Microscopy : Vinča Institute of Nuclear Sciences : Faculty of Biology
PB  - Novi Sad : Faculty of Technical Sciences
C3  - 3SCM-2007 : 3rd Serbian Congress for Microscopy : Proceedings
T1  - Effects of ion implantation on properties of TiN layers
SP  - 125
EP  - 126
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12891
ER  - 
@conference{
author = "Popović, Maja and Novaković, Mirjana and Peruško, Davor and Radović, Ivan and Mitrić, M. and Milosavljević, M.",
year = "2007",
publisher = "Belgrade : Serbian Society for Microscopy : Vinča Institute of Nuclear Sciences : Faculty of Biology, Novi Sad : Faculty of Technical Sciences",
journal = "3SCM-2007 : 3rd Serbian Congress for Microscopy : Proceedings",
title = "Effects of ion implantation on properties of TiN layers",
pages = "125-126",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12891"
}
Popović, M., Novaković, M., Peruško, D., Radović, I., Mitrić, M.,& Milosavljević, M.. (2007). Effects of ion implantation on properties of TiN layers. in 3SCM-2007 : 3rd Serbian Congress for Microscopy : Proceedings
Belgrade : Serbian Society for Microscopy : Vinča Institute of Nuclear Sciences : Faculty of Biology., 125-126.
https://hdl.handle.net/21.15107/rcub_vinar_12891
Popović M, Novaković M, Peruško D, Radović I, Mitrić M, Milosavljević M. Effects of ion implantation on properties of TiN layers. in 3SCM-2007 : 3rd Serbian Congress for Microscopy : Proceedings. 2007;:125-126.
https://hdl.handle.net/21.15107/rcub_vinar_12891 .
Popović, Maja, Novaković, Mirjana, Peruško, Davor, Radović, Ivan, Mitrić, M., Milosavljević, M., "Effects of ion implantation on properties of TiN layers" in 3SCM-2007 : 3rd Serbian Congress for Microscopy : Proceedings (2007):125-126,
https://hdl.handle.net/21.15107/rcub_vinar_12891 .

A study of microstructural changes in TiN thin films induced by ion implantation

Popović, M.; Novaković, M.; Peruško, Davor; Radović, Ivan; Milinović, Velimir; Mitrić, M.; Milosavljević, M.

(Belgrade : Institute of Technical Sciences of SASA, 2007)

TY  - CONF
AU  - Popović, M.
AU  - Novaković, M.
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Mitrić, M.
AU  - Milosavljević, M.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12672
AB  - Titanium-nitrude layers are interesting as hard coathings, wear and corrosion protection materials. In general, their functional properties depend on their microstructure, i. e. the mean grain size, grain boundaries, crystalline defects, preferred orientation, surface and interface morphology, etc. Here we present a study of the micro-structural changes induced in TiN layers by irradiation with argon ions. Titanium nitride thin films were deposited by reactive ion sputtering on (100) Si to a thickness of ~250nm. After deposition the films were implanted with 120keV argon ions to the fluences of 1x1015 and 1x1016ions/cm2. Structural characterisation of the samples was performed by cross-sectional transmission electron microscopy, x-ray diffraction and Rutherford backscattering spectrometry. It was found that ion irradiation induces local micro-structural changes, formation of nanoparticles and defects. We also measured their electrical resistivity with a four point probe. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation.
PB  - Belgrade : Institute of Technical Sciences of SASA
C3  - YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts
T1  - A study of microstructural changes in TiN thin films induced by ion implantation
SP  - 69
EP  - 69
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12672
ER  - 
@conference{
author = "Popović, M. and Novaković, M. and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Mitrić, M. and Milosavljević, M.",
year = "2007",
abstract = "Titanium-nitrude layers are interesting as hard coathings, wear and corrosion protection materials. In general, their functional properties depend on their microstructure, i. e. the mean grain size, grain boundaries, crystalline defects, preferred orientation, surface and interface morphology, etc. Here we present a study of the micro-structural changes induced in TiN layers by irradiation with argon ions. Titanium nitride thin films were deposited by reactive ion sputtering on (100) Si to a thickness of ~250nm. After deposition the films were implanted with 120keV argon ions to the fluences of 1x1015 and 1x1016ions/cm2. Structural characterisation of the samples was performed by cross-sectional transmission electron microscopy, x-ray diffraction and Rutherford backscattering spectrometry. It was found that ion irradiation induces local micro-structural changes, formation of nanoparticles and defects. We also measured their electrical resistivity with a four point probe. The induced crystalline defects yield an increase of electrical resistivity after ion irradiation.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts",
title = "A study of microstructural changes in TiN thin films induced by ion implantation",
pages = "69-69",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12672"
}
Popović, M., Novaković, M., Peruško, D., Radović, I., Milinović, V., Mitrić, M.,& Milosavljević, M.. (2007). A study of microstructural changes in TiN thin films induced by ion implantation. in YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts
Belgrade : Institute of Technical Sciences of SASA., 69-69.
https://hdl.handle.net/21.15107/rcub_vinar_12672
Popović M, Novaković M, Peruško D, Radović I, Milinović V, Mitrić M, Milosavljević M. A study of microstructural changes in TiN thin films induced by ion implantation. in YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts. 2007;:69-69.
https://hdl.handle.net/21.15107/rcub_vinar_12672 .
Popović, M., Novaković, M., Peruško, Davor, Radović, Ivan, Milinović, Velimir, Mitrić, M., Milosavljević, M., "A study of microstructural changes in TiN thin films induced by ion implantation" in YUCOMAT 2007 : 9th Annual Conference YUCOMAT 2007 : Programme and the book of abstracts (2007):69-69,
https://hdl.handle.net/21.15107/rcub_vinar_12672 .

Ion beam modification of TiN thin films - a study of the induced microstructural changes

Popović, Maja; Novaković, Mirjana; Peruško, Davor; Radović, Ivan; Milinović, Velimir; Stojanović, Z.; Bibić, Nataša; Milosavljević, M.

(2006)

TY  - CONF
AU  - Popović, Maja
AU  - Novaković, Mirjana
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Stojanović, Z.
AU  - Bibić, Nataša
AU  - Milosavljević, M.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12890
C3  - IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts
T1  - Ion beam modification of TiN thin films - a study of the induced microstructural changes
SP  - 154
EP  - 154
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12890
ER  - 
@conference{
author = "Popović, Maja and Novaković, Mirjana and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Stojanović, Z. and Bibić, Nataša and Milosavljević, M.",
year = "2006",
journal = "IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts",
title = "Ion beam modification of TiN thin films - a study of the induced microstructural changes",
pages = "154-154",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12890"
}
Popović, M., Novaković, M., Peruško, D., Radović, I., Milinović, V., Stojanović, Z., Bibić, N.,& Milosavljević, M.. (2006). Ion beam modification of TiN thin films - a study of the induced microstructural changes. in IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts, 154-154.
https://hdl.handle.net/21.15107/rcub_vinar_12890
Popović M, Novaković M, Peruško D, Radović I, Milinović V, Stojanović Z, Bibić N, Milosavljević M. Ion beam modification of TiN thin films - a study of the induced microstructural changes. in IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts. 2006;:154-154.
https://hdl.handle.net/21.15107/rcub_vinar_12890 .
Popović, Maja, Novaković, Mirjana, Peruško, Davor, Radović, Ivan, Milinović, Velimir, Stojanović, Z., Bibić, Nataša, Milosavljević, M., "Ion beam modification of TiN thin films - a study of the induced microstructural changes" in IBMM 2006 : Ion Beam Modification Materials : Program and Abstracts (2006):154-154,
https://hdl.handle.net/21.15107/rcub_vinar_12890 .

Microstructural changes in TiN thin films induced by ion implantation

Popović, M.; Novaković, M.; Peruško, Davor; Radović, Ivan; Milinović, Velimir; Mitrić, M.; Bibić, Nataša; Milosavljević, M.

(Belgrade : Institute of Technical Sciences of SASA, 2006)

TY  - CONF
AU  - Popović, M.
AU  - Novaković, M.
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Mitrić, M.
AU  - Bibić, Nataša
AU  - Milosavljević, M.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12671
AB  - study of the microstructural changes in TiN films induced by implantation of nitrogen or argon ions is presented. Titanium nitride thin films were deposited by reactive ion sputtering from a 99.9% Ti target, with an argon ion beam in a nitrogen ambient. The base pressure in the chamber was ~ 2x10-6 mbar, N2 partial pressure 3x10-4 mbar, and Ar partial pressure 1x10-3 mbar. The films were deposited on (100) Si substrates, to a thickness of 200 nm, at a rate of ~ 7 nm/min, at ambient temperature. After deposition the films were implanted with 80 keV nitrogen ions or 120 keV argon ions, to the fluences from 1-15x1015 ions/cm2. The ion beam was uniformly scanned over an area of 2x2 cm2 on the target, and the beam current was held at ~ 1 A/cm2 in order to avoid heating of the samples during ion irradiation. The implantation energy was chosen to give the projected ion range within the deposited layers, in order to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, xray diffraction, and Rutherford backscattering spectrometry. While ion implantation is mainly used to improve adhesion of these layers to the substrate, our primary interest was to study microstructural changes induced within the layers. We have correlated these changes with the ion implantation parameters, i.e. the ion mass, energy and fluence.
PB  - Belgrade : Institute of Technical Sciences of SASA
C3  - YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts
T1  - Microstructural changes in TiN thin films induced by ion implantation
SP  - 100
EP  - 100
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12671
ER  - 
@conference{
author = "Popović, M. and Novaković, M. and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Mitrić, M. and Bibić, Nataša and Milosavljević, M.",
year = "2006",
abstract = "study of the microstructural changes in TiN films induced by implantation of nitrogen or argon ions is presented. Titanium nitride thin films were deposited by reactive ion sputtering from a 99.9% Ti target, with an argon ion beam in a nitrogen ambient. The base pressure in the chamber was ~ 2x10-6 mbar, N2 partial pressure 3x10-4 mbar, and Ar partial pressure 1x10-3 mbar. The films were deposited on (100) Si substrates, to a thickness of 200 nm, at a rate of ~ 7 nm/min, at ambient temperature. After deposition the films were implanted with 80 keV nitrogen ions or 120 keV argon ions, to the fluences from 1-15x1015 ions/cm2. The ion beam was uniformly scanned over an area of 2x2 cm2 on the target, and the beam current was held at ~ 1 A/cm2 in order to avoid heating of the samples during ion irradiation. The implantation energy was chosen to give the projected ion range within the deposited layers, in order to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, xray diffraction, and Rutherford backscattering spectrometry. While ion implantation is mainly used to improve adhesion of these layers to the substrate, our primary interest was to study microstructural changes induced within the layers. We have correlated these changes with the ion implantation parameters, i.e. the ion mass, energy and fluence.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts",
title = "Microstructural changes in TiN thin films induced by ion implantation",
pages = "100-100",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12671"
}
Popović, M., Novaković, M., Peruško, D., Radović, I., Milinović, V., Mitrić, M., Bibić, N.,& Milosavljević, M.. (2006). Microstructural changes in TiN thin films induced by ion implantation. in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts
Belgrade : Institute of Technical Sciences of SASA., 100-100.
https://hdl.handle.net/21.15107/rcub_vinar_12671
Popović M, Novaković M, Peruško D, Radović I, Milinović V, Mitrić M, Bibić N, Milosavljević M. Microstructural changes in TiN thin films induced by ion implantation. in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts. 2006;:100-100.
https://hdl.handle.net/21.15107/rcub_vinar_12671 .
Popović, M., Novaković, M., Peruško, Davor, Radović, Ivan, Milinović, Velimir, Mitrić, M., Bibić, Nataša, Milosavljević, M., "Microstructural changes in TiN thin films induced by ion implantation" in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts (2006):100-100,
https://hdl.handle.net/21.15107/rcub_vinar_12671 .

GXRD analysis of TiN coatings deposited on ion implanted stainless steel

Peruško, Davor; Mitrić, M.; Bibić, Nataša; Petrović, S.; Popović, M.; Novaković, M.; Radović, Ivan; Milosavljević, M.

(Belgrade : Institute of Technical Sciences of SASA, 2006)

TY  - CONF
AU  - Peruško, Davor
AU  - Mitrić, M.
AU  - Bibić, Nataša
AU  - Petrović, S.
AU  - Popović, M.
AU  - Novaković, M.
AU  - Radović, Ivan
AU  - Milosavljević, M.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12666
AB  - Nitrogen ion implantations were performed on AISI 1045 steel substrates. The ion energy was 40 keV and the ion doses were from 5x1016 – 5x1017 ions cm-2. On such substrates we have deposited 1.3 μm thick TiN coatings. Structural characterizations were performed by grazing incidence X-ray diffraction analysis (GXRD), normal X-ray diffraction analysis (XRD), and scanning electron microscopy (SEM). Microhardness was measured by Vicker`s method. The obtained results indicate that the formation of iron nitrides occurred in the near surface region of the substrates. This effect is more pronounced for higher implantation doses. Structure of the deposited TiN coatings shows a dependence on the implanted doses. Ion implantation and deposition of hard TiN coatings induce an increase of microhardness of this low performance steel for more than eight times.
PB  - Belgrade : Institute of Technical Sciences of SASA
C3  - YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts
T1  - GXRD analysis of TiN coatings deposited on ion implanted stainless steel
SP  - 67
EP  - 67
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12666
ER  - 
@conference{
author = "Peruško, Davor and Mitrić, M. and Bibić, Nataša and Petrović, S. and Popović, M. and Novaković, M. and Radović, Ivan and Milosavljević, M.",
year = "2006",
abstract = "Nitrogen ion implantations were performed on AISI 1045 steel substrates. The ion energy was 40 keV and the ion doses were from 5x1016 – 5x1017 ions cm-2. On such substrates we have deposited 1.3 μm thick TiN coatings. Structural characterizations were performed by grazing incidence X-ray diffraction analysis (GXRD), normal X-ray diffraction analysis (XRD), and scanning electron microscopy (SEM). Microhardness was measured by Vicker`s method. The obtained results indicate that the formation of iron nitrides occurred in the near surface region of the substrates. This effect is more pronounced for higher implantation doses. Structure of the deposited TiN coatings shows a dependence on the implanted doses. Ion implantation and deposition of hard TiN coatings induce an increase of microhardness of this low performance steel for more than eight times.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts",
title = "GXRD analysis of TiN coatings deposited on ion implanted stainless steel",
pages = "67-67",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12666"
}
Peruško, D., Mitrić, M., Bibić, N., Petrović, S., Popović, M., Novaković, M., Radović, I.,& Milosavljević, M.. (2006). GXRD analysis of TiN coatings deposited on ion implanted stainless steel. in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts
Belgrade : Institute of Technical Sciences of SASA., 67-67.
https://hdl.handle.net/21.15107/rcub_vinar_12666
Peruško D, Mitrić M, Bibić N, Petrović S, Popović M, Novaković M, Radović I, Milosavljević M. GXRD analysis of TiN coatings deposited on ion implanted stainless steel. in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts. 2006;:67-67.
https://hdl.handle.net/21.15107/rcub_vinar_12666 .
Peruško, Davor, Mitrić, M., Bibić, Nataša, Petrović, S., Popović, M., Novaković, M., Radović, Ivan, Milosavljević, M., "GXRD analysis of TiN coatings deposited on ion implanted stainless steel" in YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts (2006):67-67,
https://hdl.handle.net/21.15107/rcub_vinar_12666 .

Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers

Bibić, Nataša; Milosavljević, M.; Milinović, Velimir; Šiljegović, M.; Peruško, Davor; Schaaf, P.; Lieb, K. P.

(2004)

TY  - CONF
AU  - Bibić, Nataša
AU  - Milosavljević, M.
AU  - Milinović, Velimir
AU  - Šiljegović, M.
AU  - Peruško, Davor
AU  - Schaaf, P.
AU  - Lieb, K. P.
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12893
AB  - In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.
C3  - SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers
T1  - Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers
SP  - 73
EP  - 73
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12893
ER  - 
@conference{
author = "Bibić, Nataša and Milosavljević, M. and Milinović, Velimir and Šiljegović, M. and Peruško, Davor and Schaaf, P. and Lieb, K. P.",
year = "2004",
abstract = "In recent years, considerable progress has been made in the understanding of heavyion- induced mixing and reactions of metal/semiconductor bilayers at ion energies, where nuclear stopping prevails. For the study of ion induced reactions in Fe/Si structures, the 30 nm 57Fe/Si bilayers were irradiated with 22 keV N2+, 250 keV Xe+, 100 keV Ar+ and 100 keV Ar8+ ions at fluences in the range of 0.05-2x1017ions/cm2. The structural changes and phase formation induced by irradiation were analyzed by Rutherford backscattering spectroscopy (RBS), X-ray diffraction analyses (XRD) and conversion electron Mössbauer spectroscopy (CEMS). The present article briefly reviews obtained experimental findings and our attempts in modeling the atomic transport processes leading to the growth of compound layers across the metal/semiconductor interface.",
journal = "SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers",
title = "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers",
pages = "73-73",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12893"
}
Bibić, N., Milosavljević, M., Milinović, V., Šiljegović, M., Peruško, D., Schaaf, P.,& Lieb, K. P.. (2004). Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers, 73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893
Bibić N, Milosavljević M, Milinović V, Šiljegović M, Peruško D, Schaaf P, Lieb KP. Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers. in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers. 2004;:73-73.
https://hdl.handle.net/21.15107/rcub_vinar_12893 .
Bibić, Nataša, Milosavljević, M., Milinović, Velimir, Šiljegović, M., Peruško, Davor, Schaaf, P., Lieb, K. P., "Nitrogen and noble-gas ion irraditions of 57Fe/Si bilayers" in SFKM 2004 : XVI National Symposium on Condensed Matter Physics : Program and Contributed Papers (2004):73-73,
https://hdl.handle.net/21.15107/rcub_vinar_12893 .

Influence of the deposition parameters on the resistivity of TiN prepared by the IBAD method

Milinović, Velimir; Milosavljević, M.; Peruško, Davor; Radović, Ivan; Bibić, Nataša

(Niš : University of Niš, Faculty of Sciences and Mathematics - Department of Physics, 2002)

TY  - CONF
AU  - Milinović, Velimir
AU  - Milosavljević, M.
AU  - Peruško, Davor
AU  - Radović, Ivan
AU  - Bibić, Nataša
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12850
PB  - Niš : University of Niš, Faculty of Sciences and Mathematics - Department of Physics
C3  - SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures
T1  - Influence of the deposition parameters on the resistivity of TiN prepared by the IBAD method
SP  - 246
EP  - 249
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12850
ER  - 
@conference{
author = "Milinović, Velimir and Milosavljević, M. and Peruško, Davor and Radović, Ivan and Bibić, Nataša",
year = "2002",
publisher = "Niš : University of Niš, Faculty of Sciences and Mathematics - Department of Physics",
journal = "SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures",
title = "Influence of the deposition parameters on the resistivity of TiN prepared by the IBAD method",
pages = "246-249",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12850"
}
Milinović, V., Milosavljević, M., Peruško, D., Radović, I.,& Bibić, N.. (2002). Influence of the deposition parameters on the resistivity of TiN prepared by the IBAD method. in SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures
Niš : University of Niš, Faculty of Sciences and Mathematics - Department of Physics., 246-249.
https://hdl.handle.net/21.15107/rcub_vinar_12850
Milinović V, Milosavljević M, Peruško D, Radović I, Bibić N. Influence of the deposition parameters on the resistivity of TiN prepared by the IBAD method. in SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures. 2002;:246-249.
https://hdl.handle.net/21.15107/rcub_vinar_12850 .
Milinović, Velimir, Milosavljević, M., Peruško, Davor, Radović, Ivan, Bibić, Nataša, "Influence of the deposition parameters on the resistivity of TiN prepared by the IBAD method" in SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures (2002):246-249,
https://hdl.handle.net/21.15107/rcub_vinar_12850 .

Influence of As ions implantation on electrical resistivity of TiN/Ti/Si structures

Peruško, Davor; Milosavljević, M.; Radović, Ivan; Milinović, Velimir; Bibić, Nataša

(Niš : University of Niš, Faculty of Sciences and Mathematics - Department of Physics, 2002)

TY  - CONF
AU  - Peruško, Davor
AU  - Milosavljević, M.
AU  - Radović, Ivan
AU  - Milinović, Velimir
AU  - Bibić, Nataša
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12855
PB  - Niš : University of Niš, Faculty of Sciences and Mathematics - Department of Physics
C3  - SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures
T1  - Influence of As ions implantation on electrical resistivity of TiN/Ti/Si structures
SP  - 242
EP  - 245
UR  - https://hdl.handle.net/21.15107/rcub_vinar_12855
ER  - 
@conference{
author = "Peruško, Davor and Milosavljević, M. and Radović, Ivan and Milinović, Velimir and Bibić, Nataša",
year = "2002",
publisher = "Niš : University of Niš, Faculty of Sciences and Mathematics - Department of Physics",
journal = "SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures",
title = "Influence of As ions implantation on electrical resistivity of TiN/Ti/Si structures",
pages = "242-245",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12855"
}
Peruško, D., Milosavljević, M., Radović, I., Milinović, V.,& Bibić, N.. (2002). Influence of As ions implantation on electrical resistivity of TiN/Ti/Si structures. in SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures
Niš : University of Niš, Faculty of Sciences and Mathematics - Department of Physics., 242-245.
https://hdl.handle.net/21.15107/rcub_vinar_12855
Peruško D, Milosavljević M, Radović I, Milinović V, Bibić N. Influence of As ions implantation on electrical resistivity of TiN/Ti/Si structures. in SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures. 2002;:242-245.
https://hdl.handle.net/21.15107/rcub_vinar_12855 .
Peruško, Davor, Milosavljević, M., Radović, Ivan, Milinović, Velimir, Bibić, Nataša, "Influence of As ions implantation on electrical resistivity of TiN/Ti/Si structures" in SPIG 2002 : 21st Summer School and International Symposium on the Physics of Ionized Gases : Contributed papers & abstracts of invited lectures, topical invited lectures, progress reports and workshop lectures (2002):242-245,
https://hdl.handle.net/21.15107/rcub_vinar_12855 .