TY  - CONF
AU  - Spreitzer, Matjaž
AU  - Bučar, Lucija
AU  - Ho, Hsin-Chia
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran
AU  - Koster, Gertjan
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11631
AB  - Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the wellestablished silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using. The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition. Detailed study of initial deposition parameters proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate different functional films were gown for applications in microelectromechanical systems and electrochemical devices.
PB  - Belgrade : Serbian Ceramic Society
C3  - Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade
T1  - Epitaxial oxides on semiconductors: growth perspectives and device applications
SP  - 32
UR  - https://hdl.handle.net/21.15107/rcub_vinar_11631
ER  - 

@conference{
author = "Spreitzer, Matjaž and Bučar, Lucija and Ho, Hsin-Chia and Trstenjak, Urška and Jovanović, Zoran and Koster, Gertjan",
year = "2023",
abstract = "Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the wellestablished silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using. The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition. Detailed study of initial deposition parameters proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate different functional films were gown for applications in microelectromechanical systems and electrochemical devices.",
publisher = "Belgrade : Serbian Ceramic Society",
journal = "Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade",
title = "Epitaxial oxides on semiconductors: growth perspectives and device applications",
pages = "32",
url = "https://hdl.handle.net/21.15107/rcub_vinar_11631"
}

Spreitzer, M., Bučar, L., Ho, H., Trstenjak, U., Jovanović, Z.,& Koster, G.. (2023). Epitaxial oxides on semiconductors: growth perspectives and device applications. in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade
Belgrade : Serbian Ceramic Society., 32.
https://hdl.handle.net/21.15107/rcub_vinar_11631

Spreitzer M, Bučar L, Ho H, Trstenjak U, Jovanović Z, Koster G. Epitaxial oxides on semiconductors: growth perspectives and device applications. in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade. 2023;:32.
https://hdl.handle.net/21.15107/rcub_vinar_11631 .

Spreitzer, Matjaž, Bučar, Lucija, Ho, Hsin-Chia, Trstenjak, Urška, Jovanović, Zoran, Koster, Gertjan, "Epitaxial oxides on semiconductors: growth perspectives and device applications" in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade (2023):32,
https://hdl.handle.net/21.15107/rcub_vinar_11631 .

TY  - JOUR
AU  - Spreitzer, Matjaž
AU  - Klement, Dejan
AU  - Parkelj Potočnik, Tjaša
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran M.
AU  - Nguyen, Minh Duc
AU  - Yuan, Huiyu
AU  - Ten Elshof, Johan Evert
AU  - Houwman, Evert
AU  - Koster, Gertjan
AU  - Rijnders, Guus
AU  - Fompeyrine, Jean
AU  - Kornblum, Lior
AU  - Fenning, David P.
AU  - Liang, Yunting
AU  - Tong, Wen-Yi
AU  - Ghosez, Philippe
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9627
AB  - Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).
T2  - APL Materials
T1  - Epitaxial ferroelectric oxides on silicon with perspectives for future device applications
VL  - 9
IS  - 4
SP  - 040701
DO  - 10.1063/5.0039161
ER  - 

@article{
author = "Spreitzer, Matjaž and Klement, Dejan and Parkelj Potočnik, Tjaša and Trstenjak, Urška and Jovanović, Zoran M. and Nguyen, Minh Duc and Yuan, Huiyu and Ten Elshof, Johan Evert and Houwman, Evert and Koster, Gertjan and Rijnders, Guus and Fompeyrine, Jean and Kornblum, Lior and Fenning, David P. and Liang, Yunting and Tong, Wen-Yi and Ghosez, Philippe",
year = "2021",
abstract = "Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).",
journal = "APL Materials",
title = "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications",
volume = "9",
number = "4",
pages = "040701",
doi = "10.1063/5.0039161"
}

Spreitzer, M., Klement, D., Parkelj Potočnik, T., Trstenjak, U., Jovanović, Z. M., Nguyen, M. D., Yuan, H., Ten Elshof, J. E., Houwman, E., Koster, G., Rijnders, G., Fompeyrine, J., Kornblum, L., Fenning, D. P., Liang, Y., Tong, W.,& Ghosez, P.. (2021). Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials, 9(4), 040701.
https://doi.org/10.1063/5.0039161

Spreitzer M, Klement D, Parkelj Potočnik T, Trstenjak U, Jovanović ZM, Nguyen MD, Yuan H, Ten Elshof JE, Houwman E, Koster G, Rijnders G, Fompeyrine J, Kornblum L, Fenning DP, Liang Y, Tong W, Ghosez P. Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials. 2021;9(4):040701.
doi:10.1063/5.0039161 .

Spreitzer, Matjaž, Klement, Dejan, Parkelj Potočnik, Tjaša, Trstenjak, Urška, Jovanović, Zoran M., Nguyen, Minh Duc, Yuan, Huiyu, Ten Elshof, Johan Evert, Houwman, Evert, Koster, Gertjan, Rijnders, Guus, Fompeyrine, Jean, Kornblum, Lior, Fenning, David P., Liang, Yunting, Tong, Wen-Yi, Ghosez, Philippe, "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications" in APL Materials, 9, no. 4 (2021):040701,
https://doi.org/10.1063/5.0039161 . .

TY  - JOUR
AU  - Muscas, Giuseppe
AU  - Jovanović, Sonja
AU  - Vukomanović, Marija
AU  - Spreitzer, Matjaž
AU  - Peddis, Davide
PY  - 2019
UR  - https://linkinghub.elsevier.com/retrieve/pii/S0925838819316147
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8194
AB  - Magnetic nanoparticles represent complex but very interesting objects. They combine the bulk properties with novel phenomena emerging at the nanoscale due to finite-size effects. The recent development of the synthetic procedures allows having a strong control on the size and shape of individual particles and on their physical-chemical structure. Among different magnetic materials, spinel ferrite nanoparticles offer strong chemical and physical stability as well as tunable magnetic properties. In the present article, we investigate the effect of Zn substitution in cobalt ferrite nanoparticles. The technological development of nanoparticle-based magnetic materials aims to find a balance between a well-defined magnetic behavior of individual elements and their strong interactions, which arise from the need of miniaturization that leads to dense ensembles of the system's constituents. Within this complex context, we provide one route to optimize the properties of small spinel ferrite particles by tuning their chemical composition without compromise their structural properties, and with full control of their size and shape. Furthermore, we propose an advanced analysis of their magnetic properties in the framework of the random anisotropy model. We will show that the chemical composition not only determines the intrinsic anisotropy energy of each nanoparticle but also owns a profound effect on the interparticle interactions. © 2019 Elsevier B.V.
T2  - Journal of Alloys and Compounds
T1  - Zn-doped cobalt ferrite: Tuning the interactions by chemical composition
VL  - 796
SP  - 203
EP  - 209
DO  - 10.1016/j.jallcom.2019.04.308
ER  - 

@article{
author = "Muscas, Giuseppe and Jovanović, Sonja and Vukomanović, Marija and Spreitzer, Matjaž and Peddis, Davide",
year = "2019",
abstract = "Magnetic nanoparticles represent complex but very interesting objects. They combine the bulk properties with novel phenomena emerging at the nanoscale due to finite-size effects. The recent development of the synthetic procedures allows having a strong control on the size and shape of individual particles and on their physical-chemical structure. Among different magnetic materials, spinel ferrite nanoparticles offer strong chemical and physical stability as well as tunable magnetic properties. In the present article, we investigate the effect of Zn substitution in cobalt ferrite nanoparticles. The technological development of nanoparticle-based magnetic materials aims to find a balance between a well-defined magnetic behavior of individual elements and their strong interactions, which arise from the need of miniaturization that leads to dense ensembles of the system's constituents. Within this complex context, we provide one route to optimize the properties of small spinel ferrite particles by tuning their chemical composition without compromise their structural properties, and with full control of their size and shape. Furthermore, we propose an advanced analysis of their magnetic properties in the framework of the random anisotropy model. We will show that the chemical composition not only determines the intrinsic anisotropy energy of each nanoparticle but also owns a profound effect on the interparticle interactions. © 2019 Elsevier B.V.",
journal = "Journal of Alloys and Compounds",
title = "Zn-doped cobalt ferrite: Tuning the interactions by chemical composition",
volume = "796",
pages = "203-209",
doi = "10.1016/j.jallcom.2019.04.308"
}

Muscas, G., Jovanović, S., Vukomanović, M., Spreitzer, M.,& Peddis, D.. (2019). Zn-doped cobalt ferrite: Tuning the interactions by chemical composition. in Journal of Alloys and Compounds, 796, 203-209.
https://doi.org/10.1016/j.jallcom.2019.04.308

Muscas G, Jovanović S, Vukomanović M, Spreitzer M, Peddis D. Zn-doped cobalt ferrite: Tuning the interactions by chemical composition. in Journal of Alloys and Compounds. 2019;796:203-209.
doi:10.1016/j.jallcom.2019.04.308 .

Muscas, Giuseppe, Jovanović, Sonja, Vukomanović, Marija, Spreitzer, Matjaž, Peddis, Davide, "Zn-doped cobalt ferrite: Tuning the interactions by chemical composition" in Journal of Alloys and Compounds, 796 (2019):203-209,
https://doi.org/10.1016/j.jallcom.2019.04.308 . .

TY  - JOUR
AU  - Jovanović, Zoran M.
AU  - Spreitzer, Matjaž
AU  - Gabor, U.
AU  - Suvorov, D.
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1233
AB  - The deoxidation and passivation of a silicon surface represents one of the most important steps in the successful integration of functional oxides with silicon. Due to its reactivity and dissimilar properties with respect to oxides, silicon surfaces are conditioned using various buffer systems. Despite the quality of the resulting surface, these Sr-based buffers have not been commercialized because of the reactivity of the metallic Sr. SrO has demonstrated properties that are competitive with metallic Sr, but a successful integration with silicon has not yet been proven. In the present study we have determined the optimal pulsed-laser deposition (PLD) conditions for the SrO-induced deoxidation of a silicon surface, which results in a 2 x 1 reconstructed surface. Additionally, the as-prepared surface is oxide-free and atomically flat. The results show that the amount of SrO plays the most critical role in the optimization of the whole process. Deposited in batch mode, the amount of SrO affects the morphologies of the surfaces, which change from a dimerized surface to SrO islands and a polycrystalline layer in the final stage. However, in the case of an insufficient amount of deposited SrO, pits are formed on the surface, drastically increasing its roughness. The successful optimization of the PLD conditions for the formation of a SrO buffer layer opens a new pathway for interfacing oxides with silicon.
T2  - RSC Advances
T1  - Control of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition technique
VL  - 6
IS  - 85
SP  - 82150
EP  - 82156
DO  - 10.1039/c6ra16311d
ER  - 

@article{
author = "Jovanović, Zoran M. and Spreitzer, Matjaž and Gabor, U. and Suvorov, D.",
year = "2016",
abstract = "The deoxidation and passivation of a silicon surface represents one of the most important steps in the successful integration of functional oxides with silicon. Due to its reactivity and dissimilar properties with respect to oxides, silicon surfaces are conditioned using various buffer systems. Despite the quality of the resulting surface, these Sr-based buffers have not been commercialized because of the reactivity of the metallic Sr. SrO has demonstrated properties that are competitive with metallic Sr, but a successful integration with silicon has not yet been proven. In the present study we have determined the optimal pulsed-laser deposition (PLD) conditions for the SrO-induced deoxidation of a silicon surface, which results in a 2 x 1 reconstructed surface. Additionally, the as-prepared surface is oxide-free and atomically flat. The results show that the amount of SrO plays the most critical role in the optimization of the whole process. Deposited in batch mode, the amount of SrO affects the morphologies of the surfaces, which change from a dimerized surface to SrO islands and a polycrystalline layer in the final stage. However, in the case of an insufficient amount of deposited SrO, pits are formed on the surface, drastically increasing its roughness. The successful optimization of the PLD conditions for the formation of a SrO buffer layer opens a new pathway for interfacing oxides with silicon.",
journal = "RSC Advances",
title = "Control of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition technique",
volume = "6",
number = "85",
pages = "82150-82156",
doi = "10.1039/c6ra16311d"
}

Jovanović, Z. M., Spreitzer, M., Gabor, U.,& Suvorov, D.. (2016). Control of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition technique. in RSC Advances, 6(85), 82150-82156.
https://doi.org/10.1039/c6ra16311d

Jovanović ZM, Spreitzer M, Gabor U, Suvorov D. Control of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition technique. in RSC Advances. 2016;6(85):82150-82156.
doi:10.1039/c6ra16311d .

Jovanović, Zoran M., Spreitzer, Matjaž, Gabor, U., Suvorov, D., "Control of SrO buffer-layer formation on Si(001) using the pulsed-laser deposition technique" in RSC Advances, 6, no. 85 (2016):82150-82156,
https://doi.org/10.1039/c6ra16311d . .

TY  - JOUR
AU  - Jovanović, Zoran M.
AU  - Spreitzer, Matjaž
AU  - Kovač, Janez
AU  - Klement, Dejan
AU  - Suvorov, Danilo
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/230
AB  - The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using Sr-induced deoxidation. The manipulation of metallic Sr is nevertheless very delicate and requires alternative buffer materials. In the present study the applicability of the chemically much more stable SrO in the process of native-oxide removal and silicon-surface stabilization was investigated using the pulsed-laser deposition technique (PLD), while the as-derived surfaces were analyzed in situ using reflection high-energy electron diffraction and ex situ using X-ray photoelectron spectroscopy, X-ray reflectivity, and atomic force microscopy. After the deposition of the SrO over Si/SiO2, in a vacuum, different annealing conditions, with the temperature ranging up to 850 degrees C, were applied. Because the deposition took place in a vacuum, a multilayer composed of SrO, Sr-silicate, modified Si, and Si as a substrate was initially formed. During the subsequent annealing the topmost layer epitaxially orders in the form of islands, while a further increase in the annealing temperature induced rapid desorption and surface deoxidation, leading to a 2 x 1 Sr-reconstructed silicon surface. However, the process is accompanied by distinctive surface roughening, and therefore the experimental conditions must be carefully optimized to minimize the effect. The results of the study revealed, for the first time, an effective pathway for the preparation of a SrO-induced buffer layer on a silicon substrate using PLD, which can be subsequently utilized for the epitaxial growth of functional oxides.
T2  - ACS Applied Materials and Interfaces
T1  - Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique
VL  - 6
IS  - 20
SP  - 18205
EP  - 18214
DO  - 10.1021/am505202p
ER  - 

@article{
author = "Jovanović, Zoran M. and Spreitzer, Matjaž and Kovač, Janez and Klement, Dejan and Suvorov, Danilo",
year = "2014",
abstract = "The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using Sr-induced deoxidation. The manipulation of metallic Sr is nevertheless very delicate and requires alternative buffer materials. In the present study the applicability of the chemically much more stable SrO in the process of native-oxide removal and silicon-surface stabilization was investigated using the pulsed-laser deposition technique (PLD), while the as-derived surfaces were analyzed in situ using reflection high-energy electron diffraction and ex situ using X-ray photoelectron spectroscopy, X-ray reflectivity, and atomic force microscopy. After the deposition of the SrO over Si/SiO2, in a vacuum, different annealing conditions, with the temperature ranging up to 850 degrees C, were applied. Because the deposition took place in a vacuum, a multilayer composed of SrO, Sr-silicate, modified Si, and Si as a substrate was initially formed. During the subsequent annealing the topmost layer epitaxially orders in the form of islands, while a further increase in the annealing temperature induced rapid desorption and surface deoxidation, leading to a 2 x 1 Sr-reconstructed silicon surface. However, the process is accompanied by distinctive surface roughening, and therefore the experimental conditions must be carefully optimized to minimize the effect. The results of the study revealed, for the first time, an effective pathway for the preparation of a SrO-induced buffer layer on a silicon substrate using PLD, which can be subsequently utilized for the epitaxial growth of functional oxides.",
journal = "ACS Applied Materials and Interfaces",
title = "Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique",
volume = "6",
number = "20",
pages = "18205-18214",
doi = "10.1021/am505202p"
}

Jovanović, Z. M., Spreitzer, M., Kovač, J., Klement, D.,& Suvorov, D.. (2014). Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique. in ACS Applied Materials and Interfaces, 6(20), 18205-18214.
https://doi.org/10.1021/am505202p

Jovanović ZM, Spreitzer M, Kovač J, Klement D, Suvorov D. Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique. in ACS Applied Materials and Interfaces. 2014;6(20):18205-18214.
doi:10.1021/am505202p .

Jovanović, Zoran M., Spreitzer, Matjaž, Kovač, Janez, Klement, Dejan, Suvorov, Danilo, "Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique" in ACS Applied Materials and Interfaces, 6, no. 20 (2014):18205-18214,
https://doi.org/10.1021/am505202p . .

TY  - CONF
AU  - Pavlović, Vera P.
AU  - Pavlović, Vladimir B.
AU  - Blanuša, Jovan
AU  - Branković, Goran O.
AU  - Spreitzer, Matjaž
AU  - Krstić, Jelena
PY  - 2012
UR  - http://dais.sanu.ac.rs/123456789/527
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7470
AB  - In order to obtain nanocrystalline material which can be used in MLCC production, the investigations of the influence of BaTiO3 powder tribophysical activation (TPA) on its structural changes, dielectric and ferroelectric properties have been performed. Microstructure development and crystal structure have been studied by mercury porosimetry method, SEM, EDS and X-ray powder diffraction analyses. The modifications of dielectric and ferroelectric properties of sintered samples have been examined and correlated with observed structural changes induced by TPA of starting powders. It has been found that dielectric and ferroelectric properties of tribophysically activated BaTiO3 could be tuned by controlling the grain size and lattice strain of activated nanostructured material.
PB  - Belgrade : Serbian Ceramic Society
C3  - Advanced Ceramics and Application : 1st Serbian Ceramic Society Conference : program and the book of abstracts; May 10-11, 2012; Belgrade
T1  - Structural Changes, Dielectric and Ferroelectric Properties of Tribophysically Activated BaTiO3
SP  - 25
EP  - 25
UR  - https://hdl.handle.net/21.15107/rcub_vinar_7470
ER  - 

@conference{
author = "Pavlović, Vera P. and Pavlović, Vladimir B. and Blanuša, Jovan and Branković, Goran O. and Spreitzer, Matjaž and Krstić, Jelena",
year = "2012",
abstract = "In order to obtain nanocrystalline material which can be used in MLCC production, the investigations of the influence of BaTiO3 powder tribophysical activation (TPA) on its structural changes, dielectric and ferroelectric properties have been performed. Microstructure development and crystal structure have been studied by mercury porosimetry method, SEM, EDS and X-ray powder diffraction analyses. The modifications of dielectric and ferroelectric properties of sintered samples have been examined and correlated with observed structural changes induced by TPA of starting powders. It has been found that dielectric and ferroelectric properties of tribophysically activated BaTiO3 could be tuned by controlling the grain size and lattice strain of activated nanostructured material.",
publisher = "Belgrade : Serbian Ceramic Society",
journal = "Advanced Ceramics and Application : 1st Serbian Ceramic Society Conference : program and the book of abstracts; May 10-11, 2012; Belgrade",
title = "Structural Changes, Dielectric and Ferroelectric Properties of Tribophysically Activated BaTiO3",
pages = "25-25",
url = "https://hdl.handle.net/21.15107/rcub_vinar_7470"
}

Pavlović, V. P., Pavlović, V. B., Blanuša, J., Branković, G. O., Spreitzer, M.,& Krstić, J.. (2012). Structural Changes, Dielectric and Ferroelectric Properties of Tribophysically Activated BaTiO3. in Advanced Ceramics and Application : 1st Serbian Ceramic Society Conference : program and the book of abstracts; May 10-11, 2012; Belgrade
Belgrade : Serbian Ceramic Society., 25-25.
https://hdl.handle.net/21.15107/rcub_vinar_7470

Pavlović VP, Pavlović VB, Blanuša J, Branković GO, Spreitzer M, Krstić J. Structural Changes, Dielectric and Ferroelectric Properties of Tribophysically Activated BaTiO3. in Advanced Ceramics and Application : 1st Serbian Ceramic Society Conference : program and the book of abstracts; May 10-11, 2012; Belgrade. 2012;:25-25.
https://hdl.handle.net/21.15107/rcub_vinar_7470 .

Pavlović, Vera P., Pavlović, Vladimir B., Blanuša, Jovan, Branković, Goran O., Spreitzer, Matjaž, Krstić, Jelena, "Structural Changes, Dielectric and Ferroelectric Properties of Tribophysically Activated BaTiO3" in Advanced Ceramics and Application : 1st Serbian Ceramic Society Conference : program and the book of abstracts; May 10-11, 2012; Belgrade (2012):25-25,
https://hdl.handle.net/21.15107/rcub_vinar_7470 .