TY  - JOUR
AU  - Ristić, Goran S.
AU  - Ilić, Stefan
AU  - Veljković, Sandra
AU  - Jevtić, Aleksandar S.
AU  - Dimitrijević, Strahinja
AU  - Palma, Alberto J.
AU  - Stanković, Srboljub
AU  - Anđelković, Marko S.
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10240
AB  - The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.
T2  - Electronics
T1  - Commercial P-Channel Power VDMOSFET as X-ray Dosimeter
VL  - 11
IS  - 6
SP  - 918
DO  - 10.3390/electronics11060918
ER  - 

@article{
author = "Ristić, Goran S. and Ilić, Stefan and Veljković, Sandra and Jevtić, Aleksandar S. and Dimitrijević, Strahinja and Palma, Alberto J. and Stanković, Srboljub and Anđelković, Marko S.",
year = "2022",
abstract = "The possibility of using commercial p-channel power vertical double-diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) as X-ray sensors is investigated in this case study. In this aspect, the dependence of sensitivity on both the gate voltage and the mean energy for three X-ray beams is examined. The eight gate voltages from 0 to 21 V are applied, and the dependence of the sensitivity on the gate voltage is well fitted using the proposed equation. Regarding X-ray energy, the sensitivity first increases and then decreases as a consequence of the behavior of the mass energy-absorption coefficients and is the largest for RQR8 beam. As the mass energy-absorption coefficients of SiO2 are not found in the literature, the mass energy-absorption coefficients of silicon are used. The behavior of irradiated transistors during annealing at room temperature without gate polarization is also considered.",
journal = "Electronics",
title = "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter",
volume = "11",
number = "6",
pages = "918",
doi = "10.3390/electronics11060918"
}

Ristić, G. S., Ilić, S., Veljković, S., Jevtić, A. S., Dimitrijević, S., Palma, A. J., Stanković, S.,& Anđelković, M. S.. (2022). Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics, 11(6), 918.
https://doi.org/10.3390/electronics11060918

Ristić GS, Ilić S, Veljković S, Jevtić AS, Dimitrijević S, Palma AJ, Stanković S, Anđelković MS. Commercial P-Channel Power VDMOSFET as X-ray Dosimeter. in Electronics. 2022;11(6):918.
doi:10.3390/electronics11060918 .

Ristić, Goran S., Ilić, Stefan, Veljković, Sandra, Jevtić, Aleksandar S., Dimitrijević, Strahinja, Palma, Alberto J., Stanković, Srboljub, Anđelković, Marko S., "Commercial P-Channel Power VDMOSFET as X-ray Dosimeter" in Electronics, 11, no. 6 (2022):918,
https://doi.org/10.3390/electronics11060918 . .

TY  - JOUR
AU  - Ristić, Goran S.
AU  - Ilić, Stefan D.
AU  - Duane, Russell
AU  - Anđelković, Marko S.
AU  - Palma, Alberto J.
AU  - Lallena, Antonio M.
AU  - Krstić, Miloš D.
AU  - Stanković, Srboljub J.
AU  - Jakšić, Aleksandar B.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12128
AB  - The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, VT, during irradiation with various positive gate biases showed the increase in VT with gate bias. The threshold voltage shift, ΔVT, during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔVT were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔVT shows the same changes as the threshold voltage component due to fixed states, ΔVft, while there is no change in the threshold voltage component due to switching traps, ΔVst.
T2  - Journal of Radiation Research and Applied Sciences
T1  - Radiation sensitive MOSFETs irradiated with various positive gate biases
VL  - 14
IS  - 1
SP  - 353
EP  - 357
DO  - 10.1080/16878507.2021.1970921
ER  - 

@article{
author = "Ristić, Goran S. and Ilić, Stefan D. and Duane, Russell and Anđelković, Marko S. and Palma, Alberto J. and Lallena, Antonio M. and Krstić, Miloš D. and Stanković, Srboljub J. and Jakšić, Aleksandar B.",
year = "2021",
abstract = "The RADiation sensitive metal-oxide-semiconductor field-effect-transistors (RADFETs) were irradiated with gamma rays up to absorbed dose of 110 Gy(H2O). The results of threshold voltage, VT, during irradiation with various positive gate biases showed the increase in VT with gate bias. The threshold voltage shift, ΔVT, during irradiation was fitted very well. The contributions of both the fixed traps (FTs) and switching traps (STs) during radiation on ΔVT were analyzed. The results show the significantly higher contribution of FTs than STs. A function that describes the dependence of threshold voltage shift and its components on gate bias was proposed, which fitted the experimental values very well. The annealing at the room temperature without gate bias of irradiated RADFETs was investigated. The recovery of threshold voltage, known as fading, slightly increase with the gate bias applied during radiation. The ΔVT shows the same changes as the threshold voltage component due to fixed states, ΔVft, while there is no change in the threshold voltage component due to switching traps, ΔVst.",
journal = "Journal of Radiation Research and Applied Sciences",
title = "Radiation sensitive MOSFETs irradiated with various positive gate biases",
volume = "14",
number = "1",
pages = "353-357",
doi = "10.1080/16878507.2021.1970921"
}

Ristić, G. S., Ilić, S. D., Duane, R., Anđelković, M. S., Palma, A. J., Lallena, A. M., Krstić, M. D., Stanković, S. J.,& Jakšić, A. B.. (2021). Radiation sensitive MOSFETs irradiated with various positive gate biases. in Journal of Radiation Research and Applied Sciences, 14(1), 353-357.
https://doi.org/10.1080/16878507.2021.1970921

Ristić GS, Ilić SD, Duane R, Anđelković MS, Palma AJ, Lallena AM, Krstić MD, Stanković SJ, Jakšić AB. Radiation sensitive MOSFETs irradiated with various positive gate biases. in Journal of Radiation Research and Applied Sciences. 2021;14(1):353-357.
doi:10.1080/16878507.2021.1970921 .

Ristić, Goran S., Ilić, Stefan D., Duane, Russell, Anđelković, Marko S., Palma, Alberto J., Lallena, Antonio M., Krstić, Miloš D., Stanković, Srboljub J., Jakšić, Aleksandar B., "Radiation sensitive MOSFETs irradiated with various positive gate biases" in Journal of Radiation Research and Applied Sciences, 14, no. 1 (2021):353-357,
https://doi.org/10.1080/16878507.2021.1970921 . .

TY  - CONF
AU  - Ilić, Stefan
AU  - Anđelković, Marko S.
AU  - Carvajal, Miguel A.
AU  - Lallena, Antonio M.
AU  - Krstić, Miloš
AU  - Stanković, Srboljub
AU  - Ristić, Goran S.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10020
AB  - In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.
C3  - MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings
T1  - Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors
SP  - 337
EP  - 340
DO  - 10.1109/MIEL52794.2021.9569076
ER  - 

@conference{
author = "Ilić, Stefan and Anđelković, Marko S. and Carvajal, Miguel A. and Lallena, Antonio M. and Krstić, Miloš and Stanković, Srboljub and Ristić, Goran S.",
year = "2021",
abstract = "In this paper, the feasibility of using commercial power Silicon Carbide (SiC) Schottky diodes as a current mode γ-radiation detector have been examined. Diodes with almost identical electric characteristics are purchased from two different manufacturers, On Semiconductor and RoHM. They have been tested under gamma radiation exposure from a Co-60 source. The current response during irradiation has been measured for various dose rates with reversed diode bias. Investigated range of dose rates was from 0.258 Gy/h to 26.312 Gy/h, and reverse diode bias values were 10 V, 20 V, 50 V, 100 V and 200 V. Tested Schottky diodes produce stable current response for the investigated dose rates. Although the manufacturers are different, the results show that the dosimetric characteristics of these diodes have an excellent match. Sensitivity was proportional to the applied reverse bias voltage. A simple power-law can very well describe the dependence of measured radiation-induced current on dose rate.",
journal = "MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings",
title = "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors",
pages = "337-340",
doi = "10.1109/MIEL52794.2021.9569076"
}

Ilić, S., Anđelković, M. S., Carvajal, M. A., Lallena, A. M., Krstić, M., Stanković, S.,& Ristić, G. S.. (2021). Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings, 337-340.
https://doi.org/10.1109/MIEL52794.2021.9569076

Ilić S, Anđelković MS, Carvajal MA, Lallena AM, Krstić M, Stanković S, Ristić GS. Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors. in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings. 2021;:337-340.
doi:10.1109/MIEL52794.2021.9569076 .

Ilić, Stefan, Anđelković, Marko S., Carvajal, Miguel A., Lallena, Antonio M., Krstić, Miloš, Stanković, Srboljub, Ristić, Goran S., "Power Silicon Carbide Schottky Diodes as Current Mode γ - Radiation Detectors" in MIEL 2021 : 32nd International Conference on Microelectronics : Proceedings (2021):337-340,
https://doi.org/10.1109/MIEL52794.2021.9569076 . .

TY  - CONF
AU  - Ristić, Goran S.
AU  - Jevtić, Aleksandar S.
AU  - Ilić, Stefan
AU  - Dimitrijević, Saša
AU  - Veljković, Stanislav
AU  - Palma, Alberto J.
AU  - Stanković, Srboljub
AU  - Anđelković, Marko S.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10021
AB  - The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the polyenergetic nature of X-rays, their effect is much more complex than the effect of gamma radiation on transistors. The influence of X-rays on threshold voltage shift $(\Delta V_T)$ and on the creation of fixed traps (FTs) in gate oxide and on switching traps (STs) near and at oxide/semiconductor interface was analyzed. The effect of STs on T is more significant than in the case of y-radiation. The obtained results showed that the sensitivity to radiation depends on the radiation energy, and they are in accordance with the theoretical predictions.
C3  - 2021 IEEE 32nd International Conference on Microelectronics (MIEL)
T1  - Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation
SP  - 341
EP  - 344
DO  - 10.1109/MIEL52794.2021.9569096
ER  - 

@conference{
author = "Ristić, Goran S. and Jevtić, Aleksandar S. and Ilić, Stefan and Dimitrijević, Saša and Veljković, Stanislav and Palma, Alberto J. and Stanković, Srboljub and Anđelković, Marko S.",
year = "2021",
abstract = "The effect of X-rays on the p-channel power vertical double diffused metal-oxide-semiconductor field-effect transistors (VDMOSFETs) was investigated. The VDMOSFETs were irradiated without gate polarization using three different Xray beams. Due to the polyenergetic nature of X-rays, their effect is much more complex than the effect of gamma radiation on transistors. The influence of X-rays on threshold voltage shift $(\Delta V_T)$ and on the creation of fixed traps (FTs) in gate oxide and on switching traps (STs) near and at oxide/semiconductor interface was analyzed. The effect of STs on T is more significant than in the case of y-radiation. The obtained results showed that the sensitivity to radiation depends on the radiation energy, and they are in accordance with the theoretical predictions.",
journal = "2021 IEEE 32nd International Conference on Microelectronics (MIEL)",
title = "Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation",
pages = "341-344",
doi = "10.1109/MIEL52794.2021.9569096"
}

Ristić, G. S., Jevtić, A. S., Ilić, S., Dimitrijević, S., Veljković, S., Palma, A. J., Stanković, S.,& Anđelković, M. S.. (2021). Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation. in 2021 IEEE 32nd International Conference on Microelectronics (MIEL), 341-344.
https://doi.org/10.1109/MIEL52794.2021.9569096

Ristić GS, Jevtić AS, Ilić S, Dimitrijević S, Veljković S, Palma AJ, Stanković S, Anđelković MS. Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation. in 2021 IEEE 32nd International Conference on Microelectronics (MIEL). 2021;:341-344.
doi:10.1109/MIEL52794.2021.9569096 .

Ristić, Goran S., Jevtić, Aleksandar S., Ilić, Stefan, Dimitrijević, Saša, Veljković, Stanislav, Palma, Alberto J., Stanković, Srboljub, Anđelković, Marko S., "Sensitivity of Unbiased Commercial P-channel Power VDMOSFETs to X-ray Radiation" in 2021 IEEE 32nd International Conference on Microelectronics (MIEL) (2021):341-344,
https://doi.org/10.1109/MIEL52794.2021.9569096 . .

TY  - JOUR
AU  - Ilić, Stefan
AU  - Anđelković, Marko S.
AU  - Duane, Russell
AU  - Palma, Alberto J.
AU  - Sarajlić, Milija
AU  - Stanković, Srboljub
AU  - Ristić, Goran S.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10081
AB  - We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.
T2  - Microelectronics Reliability
T1  - Recharging process of commercial floating-gate MOS transistor in dosimetry application
VL  - 126
SP  - 114322
DO  - 10.1016/j.microrel.2021.114322
ER  - 

@article{
author = "Ilić, Stefan and Anđelković, Marko S. and Duane, Russell and Palma, Alberto J. and Sarajlić, Milija and Stanković, Srboljub and Ristić, Goran S.",
year = "2021",
abstract = "We investigated the recharging process of commercial floating gate device (EPAD) during the six different dose rates and ten irradiation cycles with the highest dose rate. Dose rate dependence of the floating gate dosimeter was observed from 1 Gy/h to 26 Gy/h (H2O). There is no change of the dosimetric characteristic with a constant dose rate of 26 Gy/h for ten cycles. The absorbed dose does not affect the drift of the threshold voltage readings after the irradiation steps. The reprogramming characteristic is not degrading with the absorbed dose for the ten irradiation cycles, giving the promising potential in the application for dosimetric purposes.",
journal = "Microelectronics Reliability",
title = "Recharging process of commercial floating-gate MOS transistor in dosimetry application",
volume = "126",
pages = "114322",
doi = "10.1016/j.microrel.2021.114322"
}

Ilić, S., Anđelković, M. S., Duane, R., Palma, A. J., Sarajlić, M., Stanković, S.,& Ristić, G. S.. (2021). Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability, 126, 114322.
https://doi.org/10.1016/j.microrel.2021.114322

Ilić S, Anđelković MS, Duane R, Palma AJ, Sarajlić M, Stanković S, Ristić GS. Recharging process of commercial floating-gate MOS transistor in dosimetry application. in Microelectronics Reliability. 2021;126:114322.
doi:10.1016/j.microrel.2021.114322 .

Ilić, Stefan, Anđelković, Marko S., Duane, Russell, Palma, Alberto J., Sarajlić, Milija, Stanković, Srboljub, Ristić, Goran S., "Recharging process of commercial floating-gate MOS transistor in dosimetry application" in Microelectronics Reliability, 126 (2021):114322,
https://doi.org/10.1016/j.microrel.2021.114322 . .