TY  - JOUR
AU  - Obrenović, Marija D.
AU  - Pejović, Milić M.
AU  - Lazarević, Đorđe R.
AU  - Kartalović, Nenad M.
PY  - 2018
UR  - http://www.doiserbia.nb.rs/Article.aspx?ID=1451-39941801081O
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7784
AB  - The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.
T2  - Nuclear Technology and Radiation Protection
T1  - The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET
VL  - 33
IS  - 1
SP  - 81
EP  - 86
DO  - 10.2298/NTRP1801081O
ER  - 

@article{
author = "Obrenović, Marija D. and Pejović, Milić M. and Lazarević, Đorđe R. and Kartalović, Nenad M.",
year = "2018",
abstract = "The variations in the threshold voltage shift in p-channel power VDMOSFET during the gamma ray irradiation was investigated in the dose range from 10 to 100 Gy. The investigations were performed without the gate bias and with 5 V gate bias. The devices with 5 V gate bias exhibit a linear dependence between the threshold voltage shift and the radiation dose. The densities of radiation-induced fixed and switching traps were determined from the sub-threshold I-V characteristics using the midgap technique. It was shown that the creation of fixed traps is dominant during the irradiation. The possible mechanisms responsible for the fixed and switching traps creation are also analyzed in this paper.",
journal = "Nuclear Technology and Radiation Protection",
title = "The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET",
volume = "33",
number = "1",
pages = "81-86",
doi = "10.2298/NTRP1801081O"
}

Obrenović, M. D., Pejović, M. M., Lazarević, Đ. R.,& Kartalović, N. M.. (2018). The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET. in Nuclear Technology and Radiation Protection, 33(1), 81-86.
https://doi.org/10.2298/NTRP1801081O

Obrenović MD, Pejović MM, Lazarević ĐR, Kartalović NM. The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET. in Nuclear Technology and Radiation Protection. 2018;33(1):81-86.
doi:10.2298/NTRP1801081O .

Obrenović, Marija D., Pejović, Milić M., Lazarević, Đorđe R., Kartalović, Nenad M., "The effects induced by the gamma-ray responsible for the threshold voltage shift of commercial p-channel power VDMOSFET" in Nuclear Technology and Radiation Protection, 33, no. 1 (2018):81-86,
https://doi.org/10.2298/NTRP1801081O . .

TY  - JOUR
AU  - Obrenović, Marija D.
AU  - Lazarević, Đorđe R.
AU  - Stanković, Srboljub J.
AU  - Kartalović, Nenad M.
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1065
AB  - The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and gamma-radiation. Change of the samples specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation.
T2  - Nuclear technology and radiation protection
T1  - The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium
VL  - 31
IS  - 1
SP  - 97
EP  - 101
DO  - 10.2298/NTRP1601097O
ER  - 

@article{
author = "Obrenović, Marija D. and Lazarević, Đorđe R. and Stanković, Srboljub J. and Kartalović, Nenad M.",
year = "2016",
abstract = "The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and gamma-radiation. Change of the samples specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation.",
journal = "Nuclear technology and radiation protection",
title = "The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium",
volume = "31",
number = "1",
pages = "97-101",
doi = "10.2298/NTRP1601097O"
}

Obrenović, M. D., Lazarević, Đ. R., Stanković, S. J.,& Kartalović, N. M.. (2016). The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium. in Nuclear technology and radiation protection, 31(1), 97-101.
https://doi.org/10.2298/NTRP1601097O

Obrenović MD, Lazarević ĐR, Stanković SJ, Kartalović NM. The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium. in Nuclear technology and radiation protection. 2016;31(1):97-101.
doi:10.2298/NTRP1601097O .

Obrenović, Marija D., Lazarević, Đorđe R., Stanković, Srboljub J., Kartalović, Nenad M., "The Impact of Radiation on Semiconducting Characteristics of Monocrystalline Silicon and Germanium" in Nuclear technology and radiation protection, 31, no. 1 (2016):97-101,
https://doi.org/10.2298/NTRP1601097O . .

TY  - CONF
AU  - Obrenović, Marija D.
AU  - Lazarević, Đorđe R.
AU  - Stanković, Srboljub
AU  - Osmokrović, Predrag V.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7105
AB  - An increasing degree of both semiconductor components miniaturization and electromagnetic contamination of the environment brings into question the reliability of modern electronic devices. This is particularly emphasized in the functioning conditions of electronic devices related to: nuclear power facilities, medical devices based on nuclear particle and x-ray radiation and the impulse power device. At the same time, non-resistance of semiconductor components to the effects of particle and electromagnetic radiation represents the basic limitation of the expected development of nanoelectronic components. Since the most commonly used material for manufacturing semiconductor components is monocrystalline silicon, it is of great significance to be aware of the influence of nuclear particle and electromagnetic radiation on its relevant. Based on the well-known effects of nuclear (particle) interactions and electromagnetic radiation, the biggest influence on the electrical characteristics of monocrystalline silicon should be expected from neutron (n), x-ray (x) and gamma (gamma) radiation. The evaluation of such influence is often carried out (for economic and security reasons) by simulating the effect of radiation interaction with the material, applying the Monte Carlo method (numerical experiments). The aim of this paper is to evaluate the application of the Monte Carlo method for this class of problems. For this purpose, the effect of n, x and gamma radiation on the electrical characteristics of monocrystalline silicon will be determined, under the well-controlled laboratory conditions. The parameters of the experiment are energy and radiation dose. Electric characteristics of monocrystalline silicon are determined using the four-point method and the thermal method. The corresponding numerical experiments will be conducted simultaneously with these laboratory experiments. On the basis of already obtained statistical samples (laboratory and numerical experiments), the testing of both correlation and regression between them will be carried out. The results will provide an answer to the question concerning the feasibility of the Monte Carlo method for the described class of problems
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - PPC 2015 : IEEE Pulsed Power Conference : Proceedings
T1  - Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness
SP  - 7296954
DO  - 10.1109/PPC.2015.7296954
UR  - https://hdl.handle.net/21.15107/rcub_vinar_7105
ER  - 

@conference{
author = "Obrenović, Marija D. and Lazarević, Đorđe R. and Stanković, Srboljub and Osmokrović, Predrag V.",
year = "2015",
abstract = "An increasing degree of both semiconductor components miniaturization and electromagnetic contamination of the environment brings into question the reliability of modern electronic devices. This is particularly emphasized in the functioning conditions of electronic devices related to: nuclear power facilities, medical devices based on nuclear particle and x-ray radiation and the impulse power device. At the same time, non-resistance of semiconductor components to the effects of particle and electromagnetic radiation represents the basic limitation of the expected development of nanoelectronic components. Since the most commonly used material for manufacturing semiconductor components is monocrystalline silicon, it is of great significance to be aware of the influence of nuclear particle and electromagnetic radiation on its relevant. Based on the well-known effects of nuclear (particle) interactions and electromagnetic radiation, the biggest influence on the electrical characteristics of monocrystalline silicon should be expected from neutron (n), x-ray (x) and gamma (gamma) radiation. The evaluation of such influence is often carried out (for economic and security reasons) by simulating the effect of radiation interaction with the material, applying the Monte Carlo method (numerical experiments). The aim of this paper is to evaluate the application of the Monte Carlo method for this class of problems. For this purpose, the effect of n, x and gamma radiation on the electrical characteristics of monocrystalline silicon will be determined, under the well-controlled laboratory conditions. The parameters of the experiment are energy and radiation dose. Electric characteristics of monocrystalline silicon are determined using the four-point method and the thermal method. The corresponding numerical experiments will be conducted simultaneously with these laboratory experiments. On the basis of already obtained statistical samples (laboratory and numerical experiments), the testing of both correlation and regression between them will be carried out. The results will provide an answer to the question concerning the feasibility of the Monte Carlo method for the described class of problems",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "PPC 2015 : IEEE Pulsed Power Conference : Proceedings",
title = "Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness",
pages = "7296954",
doi = "10.1109/PPC.2015.7296954",
url = "https://hdl.handle.net/21.15107/rcub_vinar_7105"
}

Obrenović, M. D., Lazarević, Đ. R., Stanković, S.,& Osmokrović, P. V.. (2015). Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness. in PPC 2015 : IEEE Pulsed Power Conference : Proceedings
IEEE : Institute of Electrical and Electronics Engineers., 7296954.
https://doi.org/10.1109/PPC.2015.7296954
https://hdl.handle.net/21.15107/rcub_vinar_7105

Obrenović MD, Lazarević ĐR, Stanković S, Osmokrović PV. Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness. in PPC 2015 : IEEE Pulsed Power Conference : Proceedings. 2015;:7296954.
doi:10.1109/PPC.2015.7296954
https://hdl.handle.net/21.15107/rcub_vinar_7105 .

Obrenović, Marija D., Lazarević, Đorđe R., Stanković, Srboljub, Osmokrović, Predrag V., "Numerical Simulations of Pulsed Power Electronic Components Radiation Hardness" in PPC 2015 : IEEE Pulsed Power Conference : Proceedings (2015):7296954,
https://doi.org/10.1109/PPC.2015.7296954 .,
https://hdl.handle.net/21.15107/rcub_vinar_7105 .

TY  - CONF
AU  - Stanković, Srboljub
AU  - Ilić, Radovan D.
AU  - Lazarević, Đorđe R.
AU  - Fetahovic, I.
AU  - Obrenović, Marija D.
AU  - Iricanin, B.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7103
AB  - One of the most useful applications of MOSFET semiconductor components has been introduced to improve the gamma or electron radiation detection system. In many practical cases it is not easy to carry out experimental tests of semiconductor devices in radiation environment, so it is more convenient to perform the assessment of ionizing radiation interaction with semiconductor devices by using numerical methods based on Monte Carlo simulation techniques. A large number of previous studies have mainly focused on the study of MOSFET dosimeter response to gamma and X radiation fields. Therefore, this work will be focused on a new approach to the study radiation characteristics of the MOSFET dosimeter in fields of other types, such as field of high-energy electrons (4 MeV to 20 MeV). From the engineering point of view, it is important to consider the material that is used as a physical protection of the MOSFET dosimeter. So, it is important to investigate the energy dependence of MOSFET dosimeter to different shielding materials. For this purpose, special numerical experiments of electron transport within all layers of the elementary MOSFET structure will be performed. Shielding materials such as Kovar, Titanium Alloy with Aluminum and Niobium, Titanium Alloy with Zirconium and Niobium will be considered. The electron transport will be simulated with Monte Carlo method using the software package FOTELP-2K12. The distribution of deposited energy in all material zones of interest, as well as the absorbed dose in dosimeter sensitive zone of MOSFET structure will be determined by results obtained with numerical calculations. The physical shielding factor (PSF) for the MOSFET dosimeter, which can show the correlation between dosimeter energy dependence and shielding material in the field of electron beam radiation, will be determined within the paper. After comparing values of PSF for considered materials the recommendation for a lid material that serves as shielding for MOSFET dosimeter will be given.
T1  - Correlation Between Mosfet Dosimeter Energy Response and Its Shielding Material in Electron-Beam Radiation Environment
UR  - https://hdl.handle.net/21.15107/rcub_vinar_7103
ER  - 

@conference{
author = "Stanković, Srboljub and Ilić, Radovan D. and Lazarević, Đorđe R. and Fetahovic, I. and Obrenović, Marija D. and Iricanin, B.",
year = "2015",
abstract = "One of the most useful applications of MOSFET semiconductor components has been introduced to improve the gamma or electron radiation detection system. In many practical cases it is not easy to carry out experimental tests of semiconductor devices in radiation environment, so it is more convenient to perform the assessment of ionizing radiation interaction with semiconductor devices by using numerical methods based on Monte Carlo simulation techniques. A large number of previous studies have mainly focused on the study of MOSFET dosimeter response to gamma and X radiation fields. Therefore, this work will be focused on a new approach to the study radiation characteristics of the MOSFET dosimeter in fields of other types, such as field of high-energy electrons (4 MeV to 20 MeV). From the engineering point of view, it is important to consider the material that is used as a physical protection of the MOSFET dosimeter. So, it is important to investigate the energy dependence of MOSFET dosimeter to different shielding materials. For this purpose, special numerical experiments of electron transport within all layers of the elementary MOSFET structure will be performed. Shielding materials such as Kovar, Titanium Alloy with Aluminum and Niobium, Titanium Alloy with Zirconium and Niobium will be considered. The electron transport will be simulated with Monte Carlo method using the software package FOTELP-2K12. The distribution of deposited energy in all material zones of interest, as well as the absorbed dose in dosimeter sensitive zone of MOSFET structure will be determined by results obtained with numerical calculations. The physical shielding factor (PSF) for the MOSFET dosimeter, which can show the correlation between dosimeter energy dependence and shielding material in the field of electron beam radiation, will be determined within the paper. After comparing values of PSF for considered materials the recommendation for a lid material that serves as shielding for MOSFET dosimeter will be given.",
title = "Correlation Between Mosfet Dosimeter Energy Response and Its Shielding Material in Electron-Beam Radiation Environment",
url = "https://hdl.handle.net/21.15107/rcub_vinar_7103"
}

Stanković, S., Ilić, R. D., Lazarević, Đ. R., Fetahovic, I., Obrenović, M. D.,& Iricanin, B.. (2015). Correlation Between Mosfet Dosimeter Energy Response and Its Shielding Material in Electron-Beam Radiation Environment. .
https://hdl.handle.net/21.15107/rcub_vinar_7103

Stanković S, Ilić RD, Lazarević ĐR, Fetahovic I, Obrenović MD, Iricanin B. Correlation Between Mosfet Dosimeter Energy Response and Its Shielding Material in Electron-Beam Radiation Environment. 2015;.
https://hdl.handle.net/21.15107/rcub_vinar_7103 .

Stanković, Srboljub, Ilić, Radovan D., Lazarević, Đorđe R., Fetahovic, I., Obrenović, Marija D., Iricanin, B., "Correlation Between Mosfet Dosimeter Energy Response and Its Shielding Material in Electron-Beam Radiation Environment" (2015),
https://hdl.handle.net/21.15107/rcub_vinar_7103 .

TY  - JOUR
AU  - Lazarević, Đorđe R.
AU  - Obrenović, Marija D.
AU  - Fetahović, Irfan S.
AU  - Osmokrović, Predrag V.
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/402
AB  - This paper discusses the possibility of applying the F-test and double t-test in problems related to the identification of number of radioactive isotopes in a contaminated area by using only counters for radiation detection. The descriptions of the F-test and the double t-test are given along with the corresponding tabular values that enable their implementation. Finally, the experiment is presented via two radioactive samples. The results of the experiment were treated in the manner proposed in the paper and satisfactory results were obtained.
T2  - Nuclear technology and radiation protection
T1  - Comparison of the Empirical Variances and Mean Values of Normally Distributed Populations of Nuclear Counts
VL  - 29
IS  - 4
SP  - 285
EP  - 288
DO  - 10.2298/NTRP1404285L
ER  - 

@article{
author = "Lazarević, Đorđe R. and Obrenović, Marija D. and Fetahović, Irfan S. and Osmokrović, Predrag V.",
year = "2014",
abstract = "This paper discusses the possibility of applying the F-test and double t-test in problems related to the identification of number of radioactive isotopes in a contaminated area by using only counters for radiation detection. The descriptions of the F-test and the double t-test are given along with the corresponding tabular values that enable their implementation. Finally, the experiment is presented via two radioactive samples. The results of the experiment were treated in the manner proposed in the paper and satisfactory results were obtained.",
journal = "Nuclear technology and radiation protection",
title = "Comparison of the Empirical Variances and Mean Values of Normally Distributed Populations of Nuclear Counts",
volume = "29",
number = "4",
pages = "285-288",
doi = "10.2298/NTRP1404285L"
}

Lazarević, Đ. R., Obrenović, M. D., Fetahović, I. S.,& Osmokrović, P. V.. (2014). Comparison of the Empirical Variances and Mean Values of Normally Distributed Populations of Nuclear Counts. in Nuclear technology and radiation protection, 29(4), 285-288.
https://doi.org/10.2298/NTRP1404285L

Lazarević ĐR, Obrenović MD, Fetahović IS, Osmokrović PV. Comparison of the Empirical Variances and Mean Values of Normally Distributed Populations of Nuclear Counts. in Nuclear technology and radiation protection. 2014;29(4):285-288.
doi:10.2298/NTRP1404285L .

Lazarević, Đorđe R., Obrenović, Marija D., Fetahović, Irfan S., Osmokrović, Predrag V., "Comparison of the Empirical Variances and Mean Values of Normally Distributed Populations of Nuclear Counts" in Nuclear technology and radiation protection, 29, no. 4 (2014):285-288,
https://doi.org/10.2298/NTRP1404285L . .

TY  - JOUR
AU  - Obrenović, Marija D.
AU  - Lazarević, Đorđe R.
AU  - Dolićanin, Edin C.
AU  - Vujisić, Miloš Lj.
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5450
AB  - This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components.
T2  - Nuclear technology and radiation protection
T1  - Effects of Ion Beams on Flash Memory Cells
VL  - 29
IS  - 2
SP  - 116
EP  - 122
DO  - 10.2298/NTRP1402116O
ER  - 

@article{
author = "Obrenović, Marija D. and Lazarević, Đorđe R. and Dolićanin, Edin C. and Vujisić, Miloš Lj.",
year = "2014",
abstract = "This paper deals with the flash memory reliability in terms of the ionizing radiation effects. In fact, the reliability of flash memory depends on physico-chemical restrictions of electrostatic nature due to the effects of ionizing radiation. The presented results are actual as a high degree of integrated components miniaturization affects the memory sensitivity, while the role of memories in the solar cells management system for space flights is increasing, so that the effects of ionizing radiation may cause changes in the stored data or the physical destruction of the flash memory components.",
journal = "Nuclear technology and radiation protection",
title = "Effects of Ion Beams on Flash Memory Cells",
volume = "29",
number = "2",
pages = "116-122",
doi = "10.2298/NTRP1402116O"
}

Obrenović, M. D., Lazarević, Đ. R., Dolićanin, E. C.,& Vujisić, M. Lj.. (2014). Effects of Ion Beams on Flash Memory Cells. in Nuclear technology and radiation protection, 29(2), 116-122.
https://doi.org/10.2298/NTRP1402116O

Obrenović MD, Lazarević ĐR, Dolićanin EC, Vujisić ML. Effects of Ion Beams on Flash Memory Cells. in Nuclear technology and radiation protection. 2014;29(2):116-122.
doi:10.2298/NTRP1402116O .

Obrenović, Marija D., Lazarević, Đorđe R., Dolićanin, Edin C., Vujisić, Miloš Lj., "Effects of Ion Beams on Flash Memory Cells" in Nuclear technology and radiation protection, 29, no. 2 (2014):116-122,
https://doi.org/10.2298/NTRP1402116O . .

TY  - JOUR
AU  - Nikolic, Dejan S.
AU  - Vasić, Aleksandra I.
AU  - Lazarević, Đorđe R.
AU  - Obrenović, Marija D.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5425
AB  - This paper presents the behavior of PIN photodiodes after combined gamma and neutron irradiation. Different types of PIN photodiodes have been exposed first to gamma and then to neutron irradiation. I-V characteristics (current dependence on voltage) of photodiodes have been measured after each of these irradiations. It has been noted that the photocurrent level after the neutron irradiation is higher than before it, which is not consistent with the current theories about the effects of neutron radiation on semiconductors. In order to explain this behavior of the photodiodes, the Monte Carlo simulation of photon transport through the material has been used. It is proposed that a possible cause for current enhancement are defects in semiconductor created by gamma irradiation and effects of neutron irradiation on these defects. The results can be explained by an intercentre transfer of charge between defects in close proximity to each other. The aim of this paper is to investigate the improvement possibilities of the I-V characteristics of PIN photodiodes, and photodetectors in general, damaged by gamma irradiation.
T2  - Nuclear technology and radiation protection
T1  - Improvement Possibilities of the I-V Characteristics of Pin Photodiodes Damaged By Gamma Irradiation
VL  - 28
IS  - 1
SP  - 84
EP  - 91
DO  - 10.2298/NTRP1301084N
ER  - 

@article{
author = "Nikolic, Dejan S. and Vasić, Aleksandra I. and Lazarević, Đorđe R. and Obrenović, Marija D.",
year = "2013",
abstract = "This paper presents the behavior of PIN photodiodes after combined gamma and neutron irradiation. Different types of PIN photodiodes have been exposed first to gamma and then to neutron irradiation. I-V characteristics (current dependence on voltage) of photodiodes have been measured after each of these irradiations. It has been noted that the photocurrent level after the neutron irradiation is higher than before it, which is not consistent with the current theories about the effects of neutron radiation on semiconductors. In order to explain this behavior of the photodiodes, the Monte Carlo simulation of photon transport through the material has been used. It is proposed that a possible cause for current enhancement are defects in semiconductor created by gamma irradiation and effects of neutron irradiation on these defects. The results can be explained by an intercentre transfer of charge between defects in close proximity to each other. The aim of this paper is to investigate the improvement possibilities of the I-V characteristics of PIN photodiodes, and photodetectors in general, damaged by gamma irradiation.",
journal = "Nuclear technology and radiation protection",
title = "Improvement Possibilities of the I-V Characteristics of Pin Photodiodes Damaged By Gamma Irradiation",
volume = "28",
number = "1",
pages = "84-91",
doi = "10.2298/NTRP1301084N"
}

Nikolic, D. S., Vasić, A. I., Lazarević, Đ. R.,& Obrenović, M. D.. (2013). Improvement Possibilities of the I-V Characteristics of Pin Photodiodes Damaged By Gamma Irradiation. in Nuclear technology and radiation protection, 28(1), 84-91.
https://doi.org/10.2298/NTRP1301084N

Nikolic DS, Vasić AI, Lazarević ĐR, Obrenović MD. Improvement Possibilities of the I-V Characteristics of Pin Photodiodes Damaged By Gamma Irradiation. in Nuclear technology and radiation protection. 2013;28(1):84-91.
doi:10.2298/NTRP1301084N .

Nikolic, Dejan S., Vasić, Aleksandra I., Lazarević, Đorđe R., Obrenović, Marija D., "Improvement Possibilities of the I-V Characteristics of Pin Photodiodes Damaged By Gamma Irradiation" in Nuclear technology and radiation protection, 28, no. 1 (2013):84-91,
https://doi.org/10.2298/NTRP1301084N . .