TY  - JOUR
AU  - Antić, Željka
AU  - Prashanthi, Kovur
AU  - Kuzman, Sanja
AU  - Periša, Jovana
AU  - Ristić, Zoran
AU  - Palkar, Vaijayanti R.
AU  - Dramićanin, Miroslav
PY  - 2020
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8998
AB  - A strategy for optical nanothermometry using the negative thermal quenching behavior of intrinsic BiFeO3semiconductor nanoparticles has been reported here. X-ray diffraction measurement shows polycrystalline BiFeO3nanoparticles with a rhombohedral distorted perovskite structure. Transmission electron microscopy shows agglomerated crystalline nanoparticles around 20 nm in size. Photoluminescence measurements show that intensity of the defect level emission increases significantly with temperature, while the intensity of near band emission and other defect levels emissions show an opposite trend. The most important figures of merit for luminescence nanothermometry: the absolute (Sa) and the relative sensor sensitivity (Sr) and the temperature resolution (?Tm) were effectively resolved and calculated. The relative sensitivity and temperature resolution values are found to be 2.5% K-1and 0.2 K, respectively which are among the highest reported values observed so far for semiconductors.
T2  - RSC Advances
T1  - Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles
VL  - 10
IS  - 29
SP  - 16982
EP  - 16986
DO  - 10.1039/D0RA01896A
ER  - 

@article{
author = "Antić, Željka and Prashanthi, Kovur and Kuzman, Sanja and Periša, Jovana and Ristić, Zoran and Palkar, Vaijayanti R. and Dramićanin, Miroslav",
year = "2020",
abstract = "A strategy for optical nanothermometry using the negative thermal quenching behavior of intrinsic BiFeO3semiconductor nanoparticles has been reported here. X-ray diffraction measurement shows polycrystalline BiFeO3nanoparticles with a rhombohedral distorted perovskite structure. Transmission electron microscopy shows agglomerated crystalline nanoparticles around 20 nm in size. Photoluminescence measurements show that intensity of the defect level emission increases significantly with temperature, while the intensity of near band emission and other defect levels emissions show an opposite trend. The most important figures of merit for luminescence nanothermometry: the absolute (Sa) and the relative sensor sensitivity (Sr) and the temperature resolution (?Tm) were effectively resolved and calculated. The relative sensitivity and temperature resolution values are found to be 2.5% K-1and 0.2 K, respectively which are among the highest reported values observed so far for semiconductors.",
journal = "RSC Advances",
title = "Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles",
volume = "10",
number = "29",
pages = "16982-16986",
doi = "10.1039/D0RA01896A"
}

Antić, Ž., Prashanthi, K., Kuzman, S., Periša, J., Ristić, Z., Palkar, V. R.,& Dramićanin, M.. (2020). Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles. in RSC Advances, 10(29), 16982-16986.
https://doi.org/10.1039/D0RA01896A

Antić Ž, Prashanthi K, Kuzman S, Periša J, Ristić Z, Palkar VR, Dramićanin M. Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles. in RSC Advances. 2020;10(29):16982-16986.
doi:10.1039/D0RA01896A .

Antić, Željka, Prashanthi, Kovur, Kuzman, Sanja, Periša, Jovana, Ristić, Zoran, Palkar, Vaijayanti R., Dramićanin, Miroslav, "Ratiometric temperature measurement using negative thermal quenching of intrinsic BiFeO3 semiconductor nanoparticles" in RSC Advances, 10, no. 29 (2020):16982-16986,
https://doi.org/10.1039/D0RA01896A . .

TY  - JOUR
AU  - Antić, Željka
AU  - Prashanthi, Kovur
AU  - Jovanović, Dragana J.
AU  - Thundat, Thomas
AU  - Dramićanin, Miroslav
PY  - 2019
UR  - http://link.springer.com/10.1007/s00339-019-2703-9
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8205
AB  - This report focuses on fabrication, characterization, and fundamental optical properties of Eu 3+ - and Sm 3+ -doped GdVO 4 luminescent thin films. Films were uniformly grown on three different substrates: single crystal sapphire (0001), thermally grown silicon oxide (Si/SiO 2 ~ 500 nm) on silicon and fused quartz using pulsed laser deposition technique. Thin films’ structure, morphology, and photoluminescent properties were investigated by X-ray diffraction, atomic force and scanning electron microscopy, diffuse reflectance and photoluminescence spectroscopy. Thin films’ structure characterized by X-ray diffraction showed that for all substrates highly crystalline, zircon-type pure phase films were formed. Films’ thickness and internal morphology were determined by cross-sectional scanning electron microscopy showing completely dense, pore-free film with an average thickness of ~ 390 nm. Atomic force microscopy revealed that the average crystallite size of both Eu 3+ - and Sm 3+ -doped GdVO 4 thin films deposited on fused quartz is higher as compared to the single crystal sapphire (0001) and thermally grown silicon oxide (Si/SiO 2 ~ 500 nm) and that the surface roughness increases with the increase in the grain size. Energy band gap values, estimated from diffuse reflectance spectra were 3.57 and 3.53 eV for Eu 3+ - and Sm 3+ -doped GdVO 4 thin films, respectively. Photoluminescent properties were investigated in detail in both steady state and lifetime domain. The emission spectra show clear orange–red emission in the Sm 3+ -doped GdVO 4 thin films and red emission in Eu 3+ -doped ones. © 2019, Springer-Verlag GmbH Germany, part of Springer Nature.
T2  - Applied Physics. A: Materials Science and Processing
T1  - Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films
VL  - 125
IS  - 6
SP  - 410
DO  - 10.1007/s00339-019-2703-9
ER  - 

@article{
author = "Antić, Željka and Prashanthi, Kovur and Jovanović, Dragana J. and Thundat, Thomas and Dramićanin, Miroslav",
year = "2019",
abstract = "This report focuses on fabrication, characterization, and fundamental optical properties of Eu 3+ - and Sm 3+ -doped GdVO 4 luminescent thin films. Films were uniformly grown on three different substrates: single crystal sapphire (0001), thermally grown silicon oxide (Si/SiO 2 ~ 500 nm) on silicon and fused quartz using pulsed laser deposition technique. Thin films’ structure, morphology, and photoluminescent properties were investigated by X-ray diffraction, atomic force and scanning electron microscopy, diffuse reflectance and photoluminescence spectroscopy. Thin films’ structure characterized by X-ray diffraction showed that for all substrates highly crystalline, zircon-type pure phase films were formed. Films’ thickness and internal morphology were determined by cross-sectional scanning electron microscopy showing completely dense, pore-free film with an average thickness of ~ 390 nm. Atomic force microscopy revealed that the average crystallite size of both Eu 3+ - and Sm 3+ -doped GdVO 4 thin films deposited on fused quartz is higher as compared to the single crystal sapphire (0001) and thermally grown silicon oxide (Si/SiO 2 ~ 500 nm) and that the surface roughness increases with the increase in the grain size. Energy band gap values, estimated from diffuse reflectance spectra were 3.57 and 3.53 eV for Eu 3+ - and Sm 3+ -doped GdVO 4 thin films, respectively. Photoluminescent properties were investigated in detail in both steady state and lifetime domain. The emission spectra show clear orange–red emission in the Sm 3+ -doped GdVO 4 thin films and red emission in Eu 3+ -doped ones. © 2019, Springer-Verlag GmbH Germany, part of Springer Nature.",
journal = "Applied Physics. A: Materials Science and Processing",
title = "Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films",
volume = "125",
number = "6",
pages = "410",
doi = "10.1007/s00339-019-2703-9"
}

Antić, Ž., Prashanthi, K., Jovanović, D. J., Thundat, T.,& Dramićanin, M.. (2019). Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films. in Applied Physics. A: Materials Science and Processing, 125(6), 410.
https://doi.org/10.1007/s00339-019-2703-9

Antić Ž, Prashanthi K, Jovanović DJ, Thundat T, Dramićanin M. Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films. in Applied Physics. A: Materials Science and Processing. 2019;125(6):410.
doi:10.1007/s00339-019-2703-9 .

Antić, Željka, Prashanthi, Kovur, Jovanović, Dragana J., Thundat, Thomas, Dramićanin, Miroslav, "Structure, morphology, and luminescent behavior of RE3+-doped GdVO4 thin films" in Applied Physics. A: Materials Science and Processing, 125, no. 6 (2019):410,
https://doi.org/10.1007/s00339-019-2703-9 . .

TY  - JOUR
AU  - Prashanthi, Kovur
AU  - Antić, Željka
AU  - Thakur, Garima
AU  - Dramićanin, Miroslav
AU  - Thundat, Thomas
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1912
AB  - Wide-bandgap semiconductor nanowires with surface defect emission centers have the potential to be used as sensitive thermometers and optical probes. Here, we show that the green luminescence of multiferroic BiFeO3 (BFO) nanowires shows an anomalous negative thermal quenching (NTQ) with increasing temperatures. The release of trapped carriers from localized surface defect states is suggested as the possible mechanism for the increased green luminescence which was experimentally observed at elevated temperatures. A reasonable interpretation of the photoluminescence (PL) processes in BFO nanowires is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. Negative thermal quenching of BFO nanowires provides a new strategy for optical thermometry at higher temperatures.
T2  - Physica Status Solidi - Rapid Research Letters
T1  - Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires
VL  - 12
IS  - 1
DO  - 10.1002/pssr.201700352
ER  - 

@article{
author = "Prashanthi, Kovur and Antić, Željka and Thakur, Garima and Dramićanin, Miroslav and Thundat, Thomas",
year = "2018",
abstract = "Wide-bandgap semiconductor nanowires with surface defect emission centers have the potential to be used as sensitive thermometers and optical probes. Here, we show that the green luminescence of multiferroic BiFeO3 (BFO) nanowires shows an anomalous negative thermal quenching (NTQ) with increasing temperatures. The release of trapped carriers from localized surface defect states is suggested as the possible mechanism for the increased green luminescence which was experimentally observed at elevated temperatures. A reasonable interpretation of the photoluminescence (PL) processes in BFO nanowires is achieved, and the activation energies of the PL quenching and thermal hopping are deduced. Negative thermal quenching of BFO nanowires provides a new strategy for optical thermometry at higher temperatures.",
journal = "Physica Status Solidi - Rapid Research Letters",
title = "Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires",
volume = "12",
number = "1",
doi = "10.1002/pssr.201700352"
}

Prashanthi, K., Antić, Ž., Thakur, G., Dramićanin, M.,& Thundat, T.. (2018). Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires. in Physica Status Solidi - Rapid Research Letters, 12(1).
https://doi.org/10.1002/pssr.201700352

Prashanthi K, Antić Ž, Thakur G, Dramićanin M, Thundat T. Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires. in Physica Status Solidi - Rapid Research Letters. 2018;12(1).
doi:10.1002/pssr.201700352 .

Prashanthi, Kovur, Antić, Željka, Thakur, Garima, Dramićanin, Miroslav, Thundat, Thomas, "Surface State-Induced Anomalous Negative Thermal Quenching of Multiferroic BiFeO3 Nanowires" in Physica Status Solidi - Rapid Research Letters, 12, no. 1 (2018),
https://doi.org/10.1002/pssr.201700352 . .

TY  - JOUR
AU  - Goswami, Ankur
AU  - Dhandaria, Priyesh
AU  - Pal, Soupitak
AU  - McGee, Ryan
AU  - Khan, Faheem
AU  - Antić, Željka
AU  - Gaikwad, Ravi
AU  - Prashanthi, Kovur
AU  - Thundat, Thomas
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11870
AB  - This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis-oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (−2.9% K−1 at 296 K), higher mid-IR sensitivity (ΔR/R = 5.2%), and higher responsivity (8.7 V·W–1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.
T2  - Nano Research
T1  - Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition
VL  - 10
IS  - 10
SP  - 3571
EP  - 3584
DO  - 10.1007/s12274-017-1568-5
ER  - 

@article{
author = "Goswami, Ankur and Dhandaria, Priyesh and Pal, Soupitak and McGee, Ryan and Khan, Faheem and Antić, Željka and Gaikwad, Ravi and Prashanthi, Kovur and Thundat, Thomas",
year = "2017",
abstract = "This study reports on the mid-infrared (mid-IR) photothermal response of multilayer MoS2 thin films grown on crystalline (p-type silicon and c-axis-oriented single crystal sapphire) and amorphous (Si/SiO2 and Si/SiN) substrates by pulsed laser deposition (PLD). The photothermal response of the MoS2 films is measured as the changes in the resistance of the MoS2 films when irradiated with a mid-IR (7 to 8.2 μm) source. We show that enhancing the temperature coefficient of resistance (TCR) of the MoS2 thin films is possible by controlling the film-substrate interface through a proper choice of substrate and growth conditions. The thin films grown by PLD are characterized using X-ray diffraction, Raman, atomic force microscopy, X-ray photoelectron microscopy, and transmission electron microscopy. The high-resolution transmission electron microscopy (HRTEM) images show that the MoS2 films grow on sapphire substrates in a layer-by-layer manner with misfit dislocations. The layer growth morphology is disrupted when the films are grown on substrates with a diamond cubic structure (e.g., silicon) because of twin growth formation. The growth morphology on amorphous substrates, such as Si/SiO2 or Si/SiN, is very different. The PLD-grown MoS2 films on silicon show higher TCR (−2.9% K−1 at 296 K), higher mid-IR sensitivity (ΔR/R = 5.2%), and higher responsivity (8.7 V·W–1) compared to both the PLD-grown films on other substrates and the mechanically exfoliated MoS2 flakes transferred to different substrates.",
journal = "Nano Research",
title = "Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition",
volume = "10",
number = "10",
pages = "3571-3584",
doi = "10.1007/s12274-017-1568-5"
}

Goswami, A., Dhandaria, P., Pal, S., McGee, R., Khan, F., Antić, Ž., Gaikwad, R., Prashanthi, K.,& Thundat, T.. (2017). Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition. in Nano Research, 10(10), 3571-3584.
https://doi.org/10.1007/s12274-017-1568-5

Goswami A, Dhandaria P, Pal S, McGee R, Khan F, Antić Ž, Gaikwad R, Prashanthi K, Thundat T. Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition. in Nano Research. 2017;10(10):3571-3584.
doi:10.1007/s12274-017-1568-5 .

Goswami, Ankur, Dhandaria, Priyesh, Pal, Soupitak, McGee, Ryan, Khan, Faheem, Antić, Željka, Gaikwad, Ravi, Prashanthi, Kovur, Thundat, Thomas, "Effect of interface on mid-infrared photothermal response of MoS2 thin film grown by pulsed laser deposition" in Nano Research, 10, no. 10 (2017):3571-3584,
https://doi.org/10.1007/s12274-017-1568-5 . .

TY  - JOUR
AU  - Antić, Željka
AU  - Prashanthi, Kovur
AU  - Jovanović, Dragana J.
AU  - Ahadi, Kaveh
AU  - Dramićanin, Miroslav
AU  - Thundat, Thomas
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1752
AB  - Transparent, luminescent thin films of Dy3+-doped GdVO4 were fabricated by pulsed laser deposition technique on quartz substrates. Thin film structure, morphology and optical properties were investigated and discussed in detail. X-ray analysis shows relatively intense reflection peaks confirming that as-deposited films are highly crystalline with strong (200) preferred orientation. Cross-sectional scanning electron microscopy shows relatively dense film with an average thickness of similar to 340 nm. Band gap of Dy3+-doped GdVO4 thin film, estimated from diffuse reflectance spectrum, is 3.61 eV. Refractive index and extinction coefficient of thin films as a function of wavelength are extracted from ellipsometric spectra. The photoluminescent emission spectra have two dominant bands: one in the yellow (similar to 573 nm, F-4(9/2) - GT H-6(13/2) transition) followed by the other in the blue (similar to 484 nm, F-4(9/2) - GT H-6(15/2) transition) region resulting in the emission color placed in the white light region. (C) 2017 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition
VL  - 638
SP  - 332
EP  - 337
DO  - 10.1016/j.tsf.2017.07.069
ER  - 

@article{
author = "Antić, Željka and Prashanthi, Kovur and Jovanović, Dragana J. and Ahadi, Kaveh and Dramićanin, Miroslav and Thundat, Thomas",
year = "2017",
abstract = "Transparent, luminescent thin films of Dy3+-doped GdVO4 were fabricated by pulsed laser deposition technique on quartz substrates. Thin film structure, morphology and optical properties were investigated and discussed in detail. X-ray analysis shows relatively intense reflection peaks confirming that as-deposited films are highly crystalline with strong (200) preferred orientation. Cross-sectional scanning electron microscopy shows relatively dense film with an average thickness of similar to 340 nm. Band gap of Dy3+-doped GdVO4 thin film, estimated from diffuse reflectance spectrum, is 3.61 eV. Refractive index and extinction coefficient of thin films as a function of wavelength are extracted from ellipsometric spectra. The photoluminescent emission spectra have two dominant bands: one in the yellow (similar to 573 nm, F-4(9/2) - GT H-6(13/2) transition) followed by the other in the blue (similar to 484 nm, F-4(9/2) - GT H-6(15/2) transition) region resulting in the emission color placed in the white light region. (C) 2017 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition",
volume = "638",
pages = "332-337",
doi = "10.1016/j.tsf.2017.07.069"
}

Antić, Ž., Prashanthi, K., Jovanović, D. J., Ahadi, K., Dramićanin, M.,& Thundat, T.. (2017). Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition. in Thin Solid Films, 638, 332-337.
https://doi.org/10.1016/j.tsf.2017.07.069

Antić Ž, Prashanthi K, Jovanović DJ, Ahadi K, Dramićanin M, Thundat T. Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition. in Thin Solid Films. 2017;638:332-337.
doi:10.1016/j.tsf.2017.07.069 .

Antić, Željka, Prashanthi, Kovur, Jovanović, Dragana J., Ahadi, Kaveh, Dramićanin, Miroslav, Thundat, Thomas, "Transparent and highly luminescent dysprosium- doped GdVO4 thin films fabricated by pulsed laser deposition" in Thin Solid Films, 638 (2017):332-337,
https://doi.org/10.1016/j.tsf.2017.07.069 . .

TY  - JOUR
AU  - Antić, Željka
AU  - Dramićanin, Miroslav
AU  - Prashanthi, Kovur
AU  - Jovanović, Dragana J.
AU  - Kuzman, Sanja
AU  - Thundat, Thomas
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1255
AB  - Lanthanide-doped vanadate thin films offer (i) a promising platform for luminescence-based noncontact temperature sensing; (ii) ratiometric/self-referencing absolute measurements; (iii) exceptional repeatability and reversibility for multirun uses and a long life cycle; (iv) 2% K-1 maximum temperature sensitivity (among the highest recorded for inorganic nanothermometers); (v) a temperature resolution greater than 0.5 K; and (vi) the potential for high-resolution 2D temperature mapping.
T2  - Advanced Materials
T1  - Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry
VL  - 28
IS  - 35
SP  - 7745
DO  - 10.1002/adma.201601176
ER  - 

@article{
author = "Antić, Željka and Dramićanin, Miroslav and Prashanthi, Kovur and Jovanović, Dragana J. and Kuzman, Sanja and Thundat, Thomas",
year = "2016",
abstract = "Lanthanide-doped vanadate thin films offer (i) a promising platform for luminescence-based noncontact temperature sensing; (ii) ratiometric/self-referencing absolute measurements; (iii) exceptional repeatability and reversibility for multirun uses and a long life cycle; (iv) 2% K-1 maximum temperature sensitivity (among the highest recorded for inorganic nanothermometers); (v) a temperature resolution greater than 0.5 K; and (vi) the potential for high-resolution 2D temperature mapping.",
journal = "Advanced Materials",
title = "Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry",
volume = "28",
number = "35",
pages = "7745",
doi = "10.1002/adma.201601176"
}

Antić, Ž., Dramićanin, M., Prashanthi, K., Jovanović, D. J., Kuzman, S.,& Thundat, T.. (2016). Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry. in Advanced Materials, 28(35), 7745.
https://doi.org/10.1002/adma.201601176

Antić Ž, Dramićanin M, Prashanthi K, Jovanović DJ, Kuzman S, Thundat T. Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry. in Advanced Materials. 2016;28(35):7745.
doi:10.1002/adma.201601176 .

Antić, Željka, Dramićanin, Miroslav, Prashanthi, Kovur, Jovanović, Dragana J., Kuzman, Sanja, Thundat, Thomas, "Pulsed Laser Deposited Dysprosium-Doped Gadolinium-Vanadate Thin Films for Noncontact, Self-Referencing Luminescence Thermometry" in Advanced Materials, 28, no. 35 (2016):7745,
https://doi.org/10.1002/adma.201601176 . .

TY  - JOUR
AU  - Antić, Željka
AU  - Prashanthi, Kovur
AU  - Ćulubrk, Sanja
AU  - Vuković, Katarina
AU  - Dramićanin, Miroslav
AU  - Thundat, Thomas
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/935
AB  - Here we report on preparation of Eu3+-doped Gd(2)Ti(2)O(7)pyrochlore luminescent thin films by pulsed laser deposition technique and their structural, morphological and optical characterization. The influence of annealing temperature and background gas (air vs. argon) on film photoluminescence is examined fort he optimization of post-deposition annealing conditions. As-deposited amorphous films become pure pyrochlore crystalline after calcination at temperatures higher than 1000 degrees C. Atomic force microscopy showed increase in the grain size from similar to 20 nm in the as-deposited to similar to 60 nm in the crystalline sample annealed at 1100 degrees C. Scanning electron microscopy showed dense films with the uniform thickness of about 700 nm. Luminescence spectra of crystalline films were complex and composed of better resolved emission lines than in the amorphous sample. Emission spectra showed that symmetry of Eu3+ sites become disturbed in annealed films due to the extrinsic thermal stress. Films treated in argon displayed similar emission and excitation spectral features like air-treated ones, but with better resolved emissionlines. Calculated quantum efficiency of emission showed that optimization of annealing conditions led to an enhancement of films luminescence. The highest quantum efficiency of emission and the longestlife time is found for the sample annealed at 1100 degrees C in presence of argon. Crown Copyright (C) 2015 Published by Elsevier B. V. All rights reserved.
PB  - Elsevier
T2  - Applied Surface Science
T1  - Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films
VL  - 364
SP  - 273
EP  - 279
DO  - 10.1016/j.apsusc.2015.12.137
ER  - 

@article{
author = "Antić, Željka and Prashanthi, Kovur and Ćulubrk, Sanja and Vuković, Katarina and Dramićanin, Miroslav and Thundat, Thomas",
year = "2016",
abstract = "Here we report on preparation of Eu3+-doped Gd(2)Ti(2)O(7)pyrochlore luminescent thin films by pulsed laser deposition technique and their structural, morphological and optical characterization. The influence of annealing temperature and background gas (air vs. argon) on film photoluminescence is examined fort he optimization of post-deposition annealing conditions. As-deposited amorphous films become pure pyrochlore crystalline after calcination at temperatures higher than 1000 degrees C. Atomic force microscopy showed increase in the grain size from similar to 20 nm in the as-deposited to similar to 60 nm in the crystalline sample annealed at 1100 degrees C. Scanning electron microscopy showed dense films with the uniform thickness of about 700 nm. Luminescence spectra of crystalline films were complex and composed of better resolved emission lines than in the amorphous sample. Emission spectra showed that symmetry of Eu3+ sites become disturbed in annealed films due to the extrinsic thermal stress. Films treated in argon displayed similar emission and excitation spectral features like air-treated ones, but with better resolved emissionlines. Calculated quantum efficiency of emission showed that optimization of annealing conditions led to an enhancement of films luminescence. The highest quantum efficiency of emission and the longestlife time is found for the sample annealed at 1100 degrees C in presence of argon. Crown Copyright (C) 2015 Published by Elsevier B. V. All rights reserved.",
publisher = "Elsevier",
journal = "Applied Surface Science",
title = "Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films",
volume = "364",
pages = "273-279",
doi = "10.1016/j.apsusc.2015.12.137"
}

Antić, Ž., Prashanthi, K., Ćulubrk, S., Vuković, K., Dramićanin, M.,& Thundat, T.. (2016). Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films. in Applied Surface Science
Elsevier., 364, 273-279.
https://doi.org/10.1016/j.apsusc.2015.12.137

Antić Ž, Prashanthi K, Ćulubrk S, Vuković K, Dramićanin M, Thundat T. Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films. in Applied Surface Science. 2016;364:273-279.
doi:10.1016/j.apsusc.2015.12.137 .

Antić, Željka, Prashanthi, Kovur, Ćulubrk, Sanja, Vuković, Katarina, Dramićanin, Miroslav, Thundat, Thomas, "Effect of annealing conditions on structural and luminescencent properties of Eu3+-doped Gd2Ti2O7 thin films" in Applied Surface Science, 364 (2016):273-279,
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