Radmilovc-Radjenovic, M.

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  • Radmilovc-Radjenovic, M. (1)
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Author's Bibliography

Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas

Rađenović, Branislav M.; Radmilovc-Radjenovic, M.; Petrovic, Z. Lj.

(2007) 

TY  - CONF
AU  - Rađenović, Branislav M.
AU  - Radmilovc-Radjenovic, M.
AU  - Petrovic, Z. Lj.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6584
AB  - A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using the Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of a simplified model of Ar+/CF4 non-equilibrium plasma etching Of SiO2.
C3  - Materials Science Forum
T1  - Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas
VL  - 555
SP  - 53
EP  - +
DO  - 10.4028/www.scientific.net/MSF.555.53
ER  - 
@conference{
author = "Rađenović, Branislav M. and Radmilovc-Radjenovic, M. and Petrovic, Z. Lj.",
year = "2007",
abstract = "A comprehensive simulation of etching profile evolution requires knowledge of the etching rates at all points of the profile surface during the etching process. Electrons do not contribute directly to the material removal, but they are the source, together with positive ions, of the profile charging that has many negative consequences on the final outcome of the process especially in the case of insulating material etching. The ability to simulate feature charging was added to the 3D level set profile evolution simulator described earlier. The ion and electron fluxes were computed along the feature using the Monte Carlo method. The surface potential profiles and electric field for the entire feature were generated by solving the Laplace equation using finite elements method. Calculations were performed in the case of a simplified model of Ar+/CF4 non-equilibrium plasma etching Of SiO2.",
journal = "Materials Science Forum",
title = "Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas",
volume = "555",
pages = "53-+",
doi = "10.4028/www.scientific.net/MSF.555.53"
}
Rađenović, B. M., Radmilovc-Radjenovic, M.,& Petrovic, Z. Lj.. (2007). Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas. in Materials Science Forum, 555, 53-+.
https://doi.org/10.4028/www.scientific.net/MSF.555.53
Rađenović BM, Radmilovc-Radjenovic M, Petrovic ZL. Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas. in Materials Science Forum. 2007;555:53-+.
doi:10.4028/www.scientific.net/MSF.555.53 .
Rađenović, Branislav M., Radmilovc-Radjenovic, M., Petrovic, Z. Lj., "Influence of charging on SiO2 etching profile evolution etched by fluorocarbon Plasmas" in Materials Science Forum, 555 (2007):53-+,
https://doi.org/10.4028/www.scientific.net/MSF.555.53 . .
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