TY  - JOUR
AU  - Ristic, Goran S.
AU  - Vasovic, Nikola D.
AU  - Kovačević, Milojko
AU  - Jaksic, Aleksandar B.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4608
AB  - The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from Co-60 gamma-ray source to dose of 230 Gy(Si) without gate bias, and their reproducibility and sensitivity to radiation were investigated. The completely automatic system containing switching matrix have been used, enabling very reliable measurements of RADFET electrical characteristics. Two sample types from each RADFET chip, with the same gate oxide thickness, but different geometry (channel width and length), were investigated. The samples have shown good reproducibility of the threshold voltage shift during irradiation, i.e., the radiation sensitivity was similar for all samples. Using MG and CP techniques, it has been shown that the slow switching (border) trap density is negligible, but the fixed trap density saturates and the fast switching trap density is linear. (C) 2011 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)
VL  - 269
IS  - 23
SP  - 2703
EP  - 2708
DO  - 10.1016/j.nimb.2011.08.015
ER  - 

@article{
author = "Ristic, Goran S. and Vasovic, Nikola D. and Kovačević, Milojko and Jaksic, Aleksandar B.",
year = "2011",
abstract = "The RADFETs (pMOS dosimeters) were irradiated by ionizing radiation from Co-60 gamma-ray source to dose of 230 Gy(Si) without gate bias, and their reproducibility and sensitivity to radiation were investigated. The completely automatic system containing switching matrix have been used, enabling very reliable measurements of RADFET electrical characteristics. Two sample types from each RADFET chip, with the same gate oxide thickness, but different geometry (channel width and length), were investigated. The samples have shown good reproducibility of the threshold voltage shift during irradiation, i.e., the radiation sensitivity was similar for all samples. Using MG and CP techniques, it has been shown that the slow switching (border) trap density is negligible, but the fixed trap density saturates and the fast switching trap density is linear. (C) 2011 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)",
volume = "269",
number = "23",
pages = "2703-2708",
doi = "10.1016/j.nimb.2011.08.015"
}

Ristic, G. S., Vasovic, N. D., Kovačević, M.,& Jaksic, A. B.. (2011). The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si). in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(23), 2703-2708.
https://doi.org/10.1016/j.nimb.2011.08.015

Ristic GS, Vasovic ND, Kovačević M, Jaksic AB. The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si). in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(23):2703-2708.
doi:10.1016/j.nimb.2011.08.015 .

Ristic, Goran S., Vasovic, Nikola D., Kovačević, Milojko, Jaksic, Aleksandar B., "The sensitivity of 100 nm RADFETs with zero gate bias up to dose of 230 Gy(Si)" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 23 (2011):2703-2708,
https://doi.org/10.1016/j.nimb.2011.08.015 . .