@conference{
author = "Popović, M. and Novaković, M. and Peruško, Davor and Radović, Ivan and Milinović, Velimir and Mitrić, M. and Bibić, Nataša and Milosavljević, M.",
year = "2006",
abstract = "study of the microstructural changes in TiN films induced by implantation of nitrogen or argon ions is presented. Titanium nitride thin films were deposited by reactive ion sputtering from a 99.9% Ti target, with an argon ion beam in a nitrogen ambient. The base pressure in the chamber was ~ 2x10-6 mbar, N2 partial pressure 3x10-4 mbar, and Ar partial pressure 1x10-3 mbar. The films were deposited on (100) Si substrates, to a thickness of 200 nm, at a rate of ~ 7 nm/min, at ambient temperature. After deposition the films were implanted with 80 keV nitrogen ions or 120 keV argon ions, to the fluences from 1-15x1015 ions/cm2. The ion beam was uniformly scanned over an area of 2x2 cm2 on the target, and the beam current was held at ~ 1 A/cm2 in order to avoid heating of the samples during ion irradiation. The implantation energy was chosen to give the projected ion range within the deposited layers, in order to minimize the influence of the substrate on the induced structural changes. Structural analysis of the samples was performed by cross-sectional transmission electron microscopy, xray diffraction, and Rutherford backscattering spectrometry. While ion implantation is mainly used to improve adhesion of these layers to the substrate, our primary interest was to study microstructural changes induced within the layers. We have correlated these changes with the ion implantation parameters, i.e. the ion mass, energy and fluence.",
publisher = "Belgrade : Institute of Technical Sciences of SASA",
journal = "YUCOMAT 2006 : 8th Annual Conference YUCOMAT 2006 : Programme and the book of abstracts",
title = "Microstructural changes in TiN thin films induced by ion implantation",
pages = "100-100",
url = "https://hdl.handle.net/21.15107/rcub_vinar_12671"
}
