TY  - JOUR
AU  - Modrić-Šahbazović, Almedina
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Schmidt, Emanuel O.
AU  - Gazdić, Izet
AU  - Bibić, Nataša M.
AU  - Ronning, Carsten
AU  - Rakočević, Zlatko Lj.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8469
AB  - We investigated the structural and optical changes of Si (100) induced by single or multiple low energy silver ion irradiation with fluences up to 1016 ions/cm2. The irradiated samples were analyzed by the means of Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy and spectroscopic ellipsometry measurements. The results revealed that after 60, 75 and multiple (75 + 60) keV ion implantation Ag atoms are preferentially situated in the near-surface region of the Si with the maximum distribution at 20, 26 and 42 nm, respectively. Spherical-like particles with diameters below 5 nm are homogenously distributed along the ion track of implanted ions. In the case of single ions implantations the Ag nanoparticles are distributed in the shallower regions of silicon, while subsequent implantation of silver with multiple ion energies results in a distribution in a wider region and again a shift of the Ag nanoparticles to larger depths of silicon substrate. As the ion fluence increases a monotonic decrease in the absorption in the ultraviolet region of the spectrum was observed, due to amorphization of the silicon. On the other hand, for the fluences in the range of 1014–1015 ions/cm2 in the long-wave regions wide absorption band appears at wavelengths between 700 nm and 1000 nm, which is due to plasmon resonance of Ag nanoparticles synthesized during implantation. The position of the resonance peak reflects not only the change in the ion fluence, but also the difference in the incident Ag ion energy. After implantation to the higher ion fluences of 1016 ions/cm2 this absorption band was shifted over 1000 nm, which is much above the known values for plasmon resonances of Ag nanoparticles. © 2019 Elsevier B.V.
T2  - Surface and Coatings Technology
T1  - Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantation
VL  - 377
SP  - 124913
DO  - 10.1016/j.surfcoat.2019.124913
ER  - 

@article{
author = "Modrić-Šahbazović, Almedina and Novaković, Mirjana M. and Popović, Maja and Schmidt, Emanuel O. and Gazdić, Izet and Bibić, Nataša M. and Ronning, Carsten and Rakočević, Zlatko Lj.",
year = "2019",
abstract = "We investigated the structural and optical changes of Si (100) induced by single or multiple low energy silver ion irradiation with fluences up to 1016 ions/cm2. The irradiated samples were analyzed by the means of Rutherford backscattering spectrometry, X-ray photoelectron spectroscopy, transmission electron microscopy and spectroscopic ellipsometry measurements. The results revealed that after 60, 75 and multiple (75 + 60) keV ion implantation Ag atoms are preferentially situated in the near-surface region of the Si with the maximum distribution at 20, 26 and 42 nm, respectively. Spherical-like particles with diameters below 5 nm are homogenously distributed along the ion track of implanted ions. In the case of single ions implantations the Ag nanoparticles are distributed in the shallower regions of silicon, while subsequent implantation of silver with multiple ion energies results in a distribution in a wider region and again a shift of the Ag nanoparticles to larger depths of silicon substrate. As the ion fluence increases a monotonic decrease in the absorption in the ultraviolet region of the spectrum was observed, due to amorphization of the silicon. On the other hand, for the fluences in the range of 1014–1015 ions/cm2 in the long-wave regions wide absorption band appears at wavelengths between 700 nm and 1000 nm, which is due to plasmon resonance of Ag nanoparticles synthesized during implantation. The position of the resonance peak reflects not only the change in the ion fluence, but also the difference in the incident Ag ion energy. After implantation to the higher ion fluences of 1016 ions/cm2 this absorption band was shifted over 1000 nm, which is much above the known values for plasmon resonances of Ag nanoparticles. © 2019 Elsevier B.V.",
journal = "Surface and Coatings Technology",
title = "Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantation",
volume = "377",
pages = "124913",
doi = "10.1016/j.surfcoat.2019.124913"
}

Modrić-Šahbazović, A., Novaković, M. M., Popović, M., Schmidt, E. O., Gazdić, I., Bibić, N. M., Ronning, C.,& Rakočević, Z. Lj.. (2019). Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantation. in Surface and Coatings Technology, 377, 124913.
https://doi.org/10.1016/j.surfcoat.2019.124913

Modrić-Šahbazović A, Novaković MM, Popović M, Schmidt EO, Gazdić I, Bibić NM, Ronning C, Rakočević ZL. Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantation. in Surface and Coatings Technology. 2019;377:124913.
doi:10.1016/j.surfcoat.2019.124913 .

Modrić-Šahbazović, Almedina, Novaković, Mirjana M., Popović, Maja, Schmidt, Emanuel O., Gazdić, Izet, Bibić, Nataša M., Ronning, Carsten, Rakočević, Zlatko Lj., "Formation of Ag nanoparticles in Si (100) wafers by single and multiple low energy Ag ions implantation" in Surface and Coatings Technology, 377 (2019):124913,
https://doi.org/10.1016/j.surfcoat.2019.124913 . .

TY  - JOUR
AU  - Modrić-Šahbazović, Almedina
AU  - Novaković, Mirjana M.
AU  - Schmidt, Emanuel O.
AU  - Gazdić, Izet
AU  - Đokić, Veljko R.
AU  - Peruško, Davor
AU  - Bibić, Nataša M.
AU  - Ronning, Carsten
AU  - Rakočević, Zlatko Lj.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8016
AB  - Nanosphere lithography is an effective technique for high throughput fabrication of well-ordered patterns on large areas. This study reports on nanostructuring of silicon samples by means of Ag ions implantation through self-organized polystyrene (PS) masks. The PS nanospheres with a diameter of ∼150 nm were self-assembled in a hexagonal array on top of Si(100) wafers, and then used as a mask for subsequent 60 keV silver ion implantation. Different fluences were applied up to 2 × 1016 ions/cm2 in order to create a distribution of different sizes and densities of buried metal nanoparticles. The surface morphology and the subsurface structures were studied by scanning electron microscopy and cross-sectional transmission electron microscopy, as a function of the mask deformation upon irradiation and the implantation parameters itself. We demonstrate that Ag is implanted into Si only through the mask openings, thus forming a regular array of amorphized regions over the wide area of silicon substrate. These fragments are of similar dimensions of the spheres with widths of about 190 nm and distributed over 60 nm in depth due to the given ion range. At the subsurface region of the implanted fragments, the synthesis of small sized and optically active Ag nanoparticles is clearly observed. The samples show a strong absorption peak in the long-wavelength region from 689 to 745 nm characteristic for surface plasmon resonance excitations, which could be fitted well using the Maxwell-Garnett`s theory. © 2018 Elsevier B.V.
T2  - Optical Materials
T1  - Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask
VL  - 88
SP  - 508
EP  - 515
DO  - 10.1016/j.optmat.2018.12.022
ER  - 

@article{
author = "Modrić-Šahbazović, Almedina and Novaković, Mirjana M. and Schmidt, Emanuel O. and Gazdić, Izet and Đokić, Veljko R. and Peruško, Davor and Bibić, Nataša M. and Ronning, Carsten and Rakočević, Zlatko Lj.",
year = "2019",
abstract = "Nanosphere lithography is an effective technique for high throughput fabrication of well-ordered patterns on large areas. This study reports on nanostructuring of silicon samples by means of Ag ions implantation through self-organized polystyrene (PS) masks. The PS nanospheres with a diameter of ∼150 nm were self-assembled in a hexagonal array on top of Si(100) wafers, and then used as a mask for subsequent 60 keV silver ion implantation. Different fluences were applied up to 2 × 1016 ions/cm2 in order to create a distribution of different sizes and densities of buried metal nanoparticles. The surface morphology and the subsurface structures were studied by scanning electron microscopy and cross-sectional transmission electron microscopy, as a function of the mask deformation upon irradiation and the implantation parameters itself. We demonstrate that Ag is implanted into Si only through the mask openings, thus forming a regular array of amorphized regions over the wide area of silicon substrate. These fragments are of similar dimensions of the spheres with widths of about 190 nm and distributed over 60 nm in depth due to the given ion range. At the subsurface region of the implanted fragments, the synthesis of small sized and optically active Ag nanoparticles is clearly observed. The samples show a strong absorption peak in the long-wavelength region from 689 to 745 nm characteristic for surface plasmon resonance excitations, which could be fitted well using the Maxwell-Garnett`s theory. © 2018 Elsevier B.V.",
journal = "Optical Materials",
title = "Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask",
volume = "88",
pages = "508-515",
doi = "10.1016/j.optmat.2018.12.022"
}

Modrić-Šahbazović, A., Novaković, M. M., Schmidt, E. O., Gazdić, I., Đokić, V. R., Peruško, D., Bibić, N. M., Ronning, C.,& Rakočević, Z. Lj.. (2019). Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask. in Optical Materials, 88, 508-515.
https://doi.org/10.1016/j.optmat.2018.12.022

Modrić-Šahbazović A, Novaković MM, Schmidt EO, Gazdić I, Đokić VR, Peruško D, Bibić NM, Ronning C, Rakočević ZL. Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask. in Optical Materials. 2019;88:508-515.
doi:10.1016/j.optmat.2018.12.022 .

Modrić-Šahbazović, Almedina, Novaković, Mirjana M., Schmidt, Emanuel O., Gazdić, Izet, Đokić, Veljko R., Peruško, Davor, Bibić, Nataša M., Ronning, Carsten, Rakočević, Zlatko Lj., "Silicon nanostructuring by Ag ions implantation through nanosphere lithography mask" in Optical Materials, 88 (2019):508-515,
https://doi.org/10.1016/j.optmat.2018.12.022 . .

TY  - JOUR
AU  - Modrić-Šahbazović, Almedina
AU  - Novaković, Mirjana M.
AU  - Bibić, Nataša M.
AU  - Gazdić, Izet
AU  - Rakočević, Zlatko
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11566
AB  - U ovom radu je ispitivan uticaj implantacije nisko-energetskih jona srebra na optička svojstva monokristalnog silicijuma. Si (100) podloge su implantirane Ag jonima, energije 60 keV, sa dozama implantacije u opsegu od 1×1013-1×1016 jona/cm2. Sastav implantiranih Si podloga je određen korišćenjem Rutherford-ovog povratnog rasijanja, a optički spektri su dobijeni metodom spektroskopske elipsometrije. Pokazano je da se joni srebra nalaze u pod-površinskoj oblasti silicijuma, na dubini od ~33 nm. Sa porastom doze implantacije raste i koncentracija Ag jona u Si podlogama i, za najveću dozu od 1×1016 jona/cm2, dostiže vrijednost od ~6 at.%. Pri dozi implantacije od 1×1014 jona/cm2 uočena je pojava izražene apsorpcije u optičkim spektrima uzoraka, koja je rezultat rezonance površinskog plazmona (SPR) nanočestica srebra. Sa daljim porastom doze do 1×1016 jona/cm2 SPR pik se pomjera ka većim talasnim dužinama. Dobijeni rezultati ukazuju da pri većim dozama implantacije interakcija između Ag nanočestica postaje značajan faktor koji dominira efektom rezonance površinskog plazmona srebra u Si podlogama.
AB  - The present paper investigates the effects of low-energy silver ions implantation on the optical properties of monocrystalline silicon. Si(100) wafers were implanted with 60 keV Ag ions, to the fluences in the range of 1×1013-1×1016 ions/cm2. Composition of the implanted Si samples was analysed by means of Rurherford backscattering spectrometry and the optical spectra were obtained by spectroscopic ellipsometry measurements. The results revealed that the Ag ions are situated in the near-surface region of silicon, at depths of ~ 36 nm. When ion fluence of Ag ions was increased the concentration of Ag was also increased and for the highest ion fluence of 1×1016 ions/cm2 reach the value of ~ 6 at.%. At the fluence of 1×1014 ions/cm2 a strong apsorption in the optical spectra has been observed, which is associated with the excitation of surface plasmon resonance (SPR) of Ag nanoparticles. The position of the SPR peak shifted in the range of 326-1300 nm when the Ag ion fluence was varied up to 1×1016 ions/cm2. The results suggest that for higher implantation fluences the interaction between the Ag nanoparticles become important parameter which dominate the surface plasmon resonance effect of silver in Si.
T2  - Tehnika
T1  - Optička svojstva monokristalnog silicijuma implantiranog nisko-energetskim jonima srebra
T1  - Optical properties of low-energy Ag ion implanted monocrystalline silicon
VL  - 73
IS  - 3
SP  - 325
EP  - 329
DO  - 10.5937/tehnika1803325M
ER  - 

@article{
author = "Modrić-Šahbazović, Almedina and Novaković, Mirjana M. and Bibić, Nataša M. and Gazdić, Izet and Rakočević, Zlatko",
year = "2018",
abstract = "U ovom radu je ispitivan uticaj implantacije nisko-energetskih jona srebra na optička svojstva monokristalnog silicijuma. Si (100) podloge su implantirane Ag jonima, energije 60 keV, sa dozama implantacije u opsegu od 1×1013-1×1016 jona/cm2. Sastav implantiranih Si podloga je određen korišćenjem Rutherford-ovog povratnog rasijanja, a optički spektri su dobijeni metodom spektroskopske elipsometrije. Pokazano je da se joni srebra nalaze u pod-površinskoj oblasti silicijuma, na dubini od ~33 nm. Sa porastom doze implantacije raste i koncentracija Ag jona u Si podlogama i, za najveću dozu od 1×1016 jona/cm2, dostiže vrijednost od ~6 at.%. Pri dozi implantacije od 1×1014 jona/cm2 uočena je pojava izražene apsorpcije u optičkim spektrima uzoraka, koja je rezultat rezonance površinskog plazmona (SPR) nanočestica srebra. Sa daljim porastom doze do 1×1016 jona/cm2 SPR pik se pomjera ka većim talasnim dužinama. Dobijeni rezultati ukazuju da pri većim dozama implantacije interakcija između Ag nanočestica postaje značajan faktor koji dominira efektom rezonance površinskog plazmona srebra u Si podlogama., The present paper investigates the effects of low-energy silver ions implantation on the optical properties of monocrystalline silicon. Si(100) wafers were implanted with 60 keV Ag ions, to the fluences in the range of 1×1013-1×1016 ions/cm2. Composition of the implanted Si samples was analysed by means of Rurherford backscattering spectrometry and the optical spectra were obtained by spectroscopic ellipsometry measurements. The results revealed that the Ag ions are situated in the near-surface region of silicon, at depths of ~ 36 nm. When ion fluence of Ag ions was increased the concentration of Ag was also increased and for the highest ion fluence of 1×1016 ions/cm2 reach the value of ~ 6 at.%. At the fluence of 1×1014 ions/cm2 a strong apsorption in the optical spectra has been observed, which is associated with the excitation of surface plasmon resonance (SPR) of Ag nanoparticles. The position of the SPR peak shifted in the range of 326-1300 nm when the Ag ion fluence was varied up to 1×1016 ions/cm2. The results suggest that for higher implantation fluences the interaction between the Ag nanoparticles become important parameter which dominate the surface plasmon resonance effect of silver in Si.",
journal = "Tehnika",
title = "Optička svojstva monokristalnog silicijuma implantiranog nisko-energetskim jonima srebra, Optical properties of low-energy Ag ion implanted monocrystalline silicon",
volume = "73",
number = "3",
pages = "325-329",
doi = "10.5937/tehnika1803325M"
}

Modrić-Šahbazović, A., Novaković, M. M., Bibić, N. M., Gazdić, I.,& Rakočević, Z.. (2018). Optička svojstva monokristalnog silicijuma implantiranog nisko-energetskim jonima srebra. in Tehnika, 73(3), 325-329.
https://doi.org/10.5937/tehnika1803325M

Modrić-Šahbazović A, Novaković MM, Bibić NM, Gazdić I, Rakočević Z. Optička svojstva monokristalnog silicijuma implantiranog nisko-energetskim jonima srebra. in Tehnika. 2018;73(3):325-329.
doi:10.5937/tehnika1803325M .

Modrić-Šahbazović, Almedina, Novaković, Mirjana M., Bibić, Nataša M., Gazdić, Izet, Rakočević, Zlatko, "Optička svojstva monokristalnog silicijuma implantiranog nisko-energetskim jonima srebra" in Tehnika, 73, no. 3 (2018):325-329,
https://doi.org/10.5937/tehnika1803325M . .

TY  - CONF
AU  - Modrić-Šahbazović, Almedina
AU  - Novaković, Mirjana M.
AU  - Gazdić, Izet
AU  - Bibić, Nataša M.
AU  - Rakočević, Zlatko Lj.
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8731
PB  - Belgrade : Serbian Academy of Sciences and Arts
C3  - Program and Book of Abstracts / First International Conference on Electron Microscopy of Nanostructures ELMINA 2018, August 27-29, 2018, Belgrade, Serbia
T1  - Silicon Nanostructuring by Ag Ions Implantation Through Polystyrene Nanomask
SP  - 81
EP  - 83
UR  - https://hdl.handle.net/21.15107/rcub_vinar_8731
ER  - 

@conference{
author = "Modrić-Šahbazović, Almedina and Novaković, Mirjana M. and Gazdić, Izet and Bibić, Nataša M. and Rakočević, Zlatko Lj.",
year = "2018",
publisher = "Belgrade : Serbian Academy of Sciences and Arts",
journal = "Program and Book of Abstracts / First International Conference on Electron Microscopy of Nanostructures ELMINA 2018, August 27-29, 2018, Belgrade, Serbia",
title = "Silicon Nanostructuring by Ag Ions Implantation Through Polystyrene Nanomask",
pages = "81-83",
url = "https://hdl.handle.net/21.15107/rcub_vinar_8731"
}

Modrić-Šahbazović, A., Novaković, M. M., Gazdić, I., Bibić, N. M.,& Rakočević, Z. Lj.. (2018). Silicon Nanostructuring by Ag Ions Implantation Through Polystyrene Nanomask. in Program and Book of Abstracts / First International Conference on Electron Microscopy of Nanostructures ELMINA 2018, August 27-29, 2018, Belgrade, Serbia
Belgrade : Serbian Academy of Sciences and Arts., 81-83.
https://hdl.handle.net/21.15107/rcub_vinar_8731

Modrić-Šahbazović A, Novaković MM, Gazdić I, Bibić NM, Rakočević ZL. Silicon Nanostructuring by Ag Ions Implantation Through Polystyrene Nanomask. in Program and Book of Abstracts / First International Conference on Electron Microscopy of Nanostructures ELMINA 2018, August 27-29, 2018, Belgrade, Serbia. 2018;:81-83.
https://hdl.handle.net/21.15107/rcub_vinar_8731 .

Modrić-Šahbazović, Almedina, Novaković, Mirjana M., Gazdić, Izet, Bibić, Nataša M., Rakočević, Zlatko Lj., "Silicon Nanostructuring by Ag Ions Implantation Through Polystyrene Nanomask" in Program and Book of Abstracts / First International Conference on Electron Microscopy of Nanostructures ELMINA 2018, August 27-29, 2018, Belgrade, Serbia (2018):81-83,
https://hdl.handle.net/21.15107/rcub_vinar_8731 .