Obradović, Marko O.

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  • Obradović, Marko O. (11)
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Author's Bibliography

Laser induced mixing in multilayered Ti/Ta thin film structures

Obradović, Marko O.; Kovač, Janez; Petrović, Suzana; Lazović, Vladimir M.; Salatić, Branislav; Ciganović, Jovan; Pjević, Dejan J.; Milosavljević, Momir; Peruško, Davor

(2018)

TY  - JOUR
AU  - Obradović, Marko O.
AU  - Kovač, Janez
AU  - Petrović, Suzana
AU  - Lazović, Vladimir M.
AU  - Salatić, Branislav
AU  - Ciganović, Jovan
AU  - Pjević, Dejan J.
AU  - Milosavljević, Momir
AU  - Peruško, Davor
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7721
AB  - The possibility of interlayer mixing in a Ti/Ta multilayer system, induced by laser irradiation, was the main purpose of these experiments. Ti/Ta multilayer system, consisting of ten alternating Ti and Ta thin films and covered by slightly thicker Ti layer, was deposited on Si (100) wafers to a total thickness of 205 nm. Laser irradiation was performed in air by picoseconds Nd:YAG laser pulses in defocused regime with fluences of 0.057 and 0.11 J cm−2. Laser beam was scanned over the 5 × 5 mm surface area with different steps along y-axes. Structural and compositional characterisation was done by auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. Laser processing at lower fluence caused only oxidation of the top Ti layer, despite of the number of applied laser pulses. Interlayer mixing was not observed. Application of laser pulses at fluence of 0.11 J cm−2caused partial and/or complete ablation of deposited layers. In partially ablated regions considerable mixing between Ti and Ta films was registered.
T2  - Optical and Quantum Electronics
T1  - Laser induced mixing in multilayered Ti/Ta thin film structures
VL  - 50
IS  - 6
SP  - 257
DO  - 10.1007/s11082-018-1525-x
ER  - 
@article{
author = "Obradović, Marko O. and Kovač, Janez and Petrović, Suzana and Lazović, Vladimir M. and Salatić, Branislav and Ciganović, Jovan and Pjević, Dejan J. and Milosavljević, Momir and Peruško, Davor",
year = "2018",
abstract = "The possibility of interlayer mixing in a Ti/Ta multilayer system, induced by laser irradiation, was the main purpose of these experiments. Ti/Ta multilayer system, consisting of ten alternating Ti and Ta thin films and covered by slightly thicker Ti layer, was deposited on Si (100) wafers to a total thickness of 205 nm. Laser irradiation was performed in air by picoseconds Nd:YAG laser pulses in defocused regime with fluences of 0.057 and 0.11 J cm−2. Laser beam was scanned over the 5 × 5 mm surface area with different steps along y-axes. Structural and compositional characterisation was done by auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy, and scanning electron microscopy. Laser processing at lower fluence caused only oxidation of the top Ti layer, despite of the number of applied laser pulses. Interlayer mixing was not observed. Application of laser pulses at fluence of 0.11 J cm−2caused partial and/or complete ablation of deposited layers. In partially ablated regions considerable mixing between Ti and Ta films was registered.",
journal = "Optical and Quantum Electronics",
title = "Laser induced mixing in multilayered Ti/Ta thin film structures",
volume = "50",
number = "6",
pages = "257",
doi = "10.1007/s11082-018-1525-x"
}
Obradović, M. O., Kovač, J., Petrović, S., Lazović, V. M., Salatić, B., Ciganović, J., Pjević, D. J., Milosavljević, M.,& Peruško, D.. (2018). Laser induced mixing in multilayered Ti/Ta thin film structures. in Optical and Quantum Electronics, 50(6), 257.
https://doi.org/10.1007/s11082-018-1525-x
Obradović MO, Kovač J, Petrović S, Lazović VM, Salatić B, Ciganović J, Pjević DJ, Milosavljević M, Peruško D. Laser induced mixing in multilayered Ti/Ta thin film structures. in Optical and Quantum Electronics. 2018;50(6):257.
doi:10.1007/s11082-018-1525-x .
Obradović, Marko O., Kovač, Janez, Petrović, Suzana, Lazović, Vladimir M., Salatić, Branislav, Ciganović, Jovan, Pjević, Dejan J., Milosavljević, Momir, Peruško, Davor, "Laser induced mixing in multilayered Ti/Ta thin film structures" in Optical and Quantum Electronics, 50, no. 6 (2018):257,
https://doi.org/10.1007/s11082-018-1525-x . .
1

Laser induced mixing in multilayered Ti/Ta thin film structures

Obradović, Marko O.; Kovač, Janez; Petrović, Suzana; Lazović, Vladimir M.; Salatić, Branislav; Ciganović, Jovan; Pjević, Dejan J.; Milosavljević, Momir; Peruško, Davor

(Belgrade : Institute of Physics Belgrade, 2017)

TY  - CONF
AU  - Obradović, Marko O.
AU  - Kovač, Janez
AU  - Petrović, Suzana
AU  - Lazović, Vladimir M.
AU  - Salatić, Branislav
AU  - Ciganović, Jovan
AU  - Pjević, Dejan J.
AU  - Milosavljević, Momir
AU  - Peruško, Davor
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10948
AB  - Metallic biomaterials should exhibit excellent biocompatibility, high corrosion resistance and low elastic modulus which are close to that of human bones. It was shown that in this sence Ti-Ta alloys have considerably better mechanical properties compared to pure titanium or tantalum [1, 2]. The main purpose of these experiments was investigation of possibility to induce interlayer mixing in an Ti/Ta immiscible multilayer system by laser irradiation.The absence of interlayer mixing was previously shown on this system during the Ar+ ion irradiation up to relatively high fluence of 2x1016 ions cm-2 [3]. The system consisted of ten alternate Ti and Ta thin films (~18 nm each) and covered by slightly thicker Ti layer (~27 nm) on the top with the purpose of creating an appropriate porous structure very important for potential biocompatibility [4]. Structure was deposited on Si (100) wafers to a total thickness of 205 nm. Laser irradiation was performed in air by picoseconds Nd: YAG laser. Defocused laser pulses had a laser spot on the sample surface of 3 mm in diameter and fluences of 0.057 and 0.11 J cm-2 . Laser beam was scanned over the 5x5 mm2 surface area with different steps along y-axes to provide a variation in deposited energy density. For structural and compositional characterisation following methods were used: Auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy. The obtained results show that laser processing at a lower fluence causes only oxidation of the top Ti layer, invariable to the number of applied laser pulses and no interlayer mixing was observed. Appliance of laser pulses at fluence of 0.11 J cm-2 , on the other hand, caused significant increase of surface roughness and partial and/or complete ablation of deposited layers, but in partially ablated regions considerable mixing between Ti and Ta films was registered. These experiments indicate that the use of picoseconds laser pulses with fluences in interval (0.057 – 0.11) J cm-2 could be very useful for mixing of titanium and tantalum layers and fabrication of a new material for medical implants. Suitable choice of films thicknesses would lead to the desired composition of this alloy.
PB  - Belgrade : Institute of Physics Belgrade
C3  - PHOTONICA2017 : 6th International School and Conference on Photonics and COST actions: MP1406 and MP1402 : Program and the book of abstracts
T1  - Laser induced mixing in multilayered Ti/Ta thin film structures
SP  - 182
UR  - https://hdl.handle.net/21.15107/rcub_vinar_10948
ER  - 
@conference{
author = "Obradović, Marko O. and Kovač, Janez and Petrović, Suzana and Lazović, Vladimir M. and Salatić, Branislav and Ciganović, Jovan and Pjević, Dejan J. and Milosavljević, Momir and Peruško, Davor",
year = "2017",
abstract = "Metallic biomaterials should exhibit excellent biocompatibility, high corrosion resistance and low elastic modulus which are close to that of human bones. It was shown that in this sence Ti-Ta alloys have considerably better mechanical properties compared to pure titanium or tantalum [1, 2]. The main purpose of these experiments was investigation of possibility to induce interlayer mixing in an Ti/Ta immiscible multilayer system by laser irradiation.The absence of interlayer mixing was previously shown on this system during the Ar+ ion irradiation up to relatively high fluence of 2x1016 ions cm-2 [3]. The system consisted of ten alternate Ti and Ta thin films (~18 nm each) and covered by slightly thicker Ti layer (~27 nm) on the top with the purpose of creating an appropriate porous structure very important for potential biocompatibility [4]. Structure was deposited on Si (100) wafers to a total thickness of 205 nm. Laser irradiation was performed in air by picoseconds Nd: YAG laser. Defocused laser pulses had a laser spot on the sample surface of 3 mm in diameter and fluences of 0.057 and 0.11 J cm-2 . Laser beam was scanned over the 5x5 mm2 surface area with different steps along y-axes to provide a variation in deposited energy density. For structural and compositional characterisation following methods were used: Auger electron spectroscopy, X-ray photoelectron spectroscopy, atomic force microscopy and scanning electron microscopy. The obtained results show that laser processing at a lower fluence causes only oxidation of the top Ti layer, invariable to the number of applied laser pulses and no interlayer mixing was observed. Appliance of laser pulses at fluence of 0.11 J cm-2 , on the other hand, caused significant increase of surface roughness and partial and/or complete ablation of deposited layers, but in partially ablated regions considerable mixing between Ti and Ta films was registered. These experiments indicate that the use of picoseconds laser pulses with fluences in interval (0.057 – 0.11) J cm-2 could be very useful for mixing of titanium and tantalum layers and fabrication of a new material for medical implants. Suitable choice of films thicknesses would lead to the desired composition of this alloy.",
publisher = "Belgrade : Institute of Physics Belgrade",
journal = "PHOTONICA2017 : 6th International School and Conference on Photonics and COST actions: MP1406 and MP1402 : Program and the book of abstracts",
title = "Laser induced mixing in multilayered Ti/Ta thin film structures",
pages = "182",
url = "https://hdl.handle.net/21.15107/rcub_vinar_10948"
}
Obradović, M. O., Kovač, J., Petrović, S., Lazović, V. M., Salatić, B., Ciganović, J., Pjević, D. J., Milosavljević, M.,& Peruško, D.. (2017). Laser induced mixing in multilayered Ti/Ta thin film structures. in PHOTONICA2017 : 6th International School and Conference on Photonics and COST actions: MP1406 and MP1402 : Program and the book of abstracts
Belgrade : Institute of Physics Belgrade., 182.
https://hdl.handle.net/21.15107/rcub_vinar_10948
Obradović MO, Kovač J, Petrović S, Lazović VM, Salatić B, Ciganović J, Pjević DJ, Milosavljević M, Peruško D. Laser induced mixing in multilayered Ti/Ta thin film structures. in PHOTONICA2017 : 6th International School and Conference on Photonics and COST actions: MP1406 and MP1402 : Program and the book of abstracts. 2017;:182.
https://hdl.handle.net/21.15107/rcub_vinar_10948 .
Obradović, Marko O., Kovač, Janez, Petrović, Suzana, Lazović, Vladimir M., Salatić, Branislav, Ciganović, Jovan, Pjević, Dejan J., Milosavljević, Momir, Peruško, Davor, "Laser induced mixing in multilayered Ti/Ta thin film structures" in PHOTONICA2017 : 6th International School and Conference on Photonics and COST actions: MP1406 and MP1402 : Program and the book of abstracts (2017):182,
https://hdl.handle.net/21.15107/rcub_vinar_10948 .

Selective Al-Ti reactivity in laser-processed Al/Ti multilayers

Peruško, Davor; Kovač, Janez; Petrović, Suzana; Obradović, Marko O.; Mitrić, Miodrag; Pavlović, Vladimir B.; Salatić, Branislav; Jaksa, G.; Ciganović, Jovan; Milosavljević, Momir

(2017)

TY  - JOUR
AU  - Peruško, Davor
AU  - Kovač, Janez
AU  - Petrović, Suzana
AU  - Obradović, Marko O.
AU  - Mitrić, Miodrag
AU  - Pavlović, Vladimir B.
AU  - Salatić, Branislav
AU  - Jaksa, G.
AU  - Ciganović, Jovan
AU  - Milosavljević, Momir
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1725
AB  - Multilayers consisting of five (Al/Ti) bilayers were deposited on (100) silicon wafers. On top was deposited the Ti layer, aimed at preventing Al from diffusing to the surface upon laser treatment. The total thickness of the thin-film structure was 200 nm. Laser irradiations with Nd:YAG picoseconds laser pulses in the defocused regime were performed in air. Laser beam energy was 4 mJ and laser spot diameter on the sample surface was 3 mm (fluence 0.057 J cm(-2)). The samples were treated with different numbers of laser pulses. Structural characterizations were performed by different analytical methods and nano-hardness was also measured. Laser processing induced layer intermixing, formation of titanium aluminides, oxidation of the surface titanium layer and enhanced surface roughness. Aluminum appears at the sample surface only for the highest density of laser irradiation. Laser processing induces increment of nano-hardness by approximately 20% and decrease of residual Youngs modulus for a few percentages from the starting value of the untreated samples. These results can be interesting toward achieving structures with a selective extent of Al-Ti reactivity in this multilayered system, within the development of biocompatible materials.
T2  - Materials and Manufacturing Processes
T1  - Selective Al-Ti reactivity in laser-processed Al/Ti multilayers
VL  - 32
IS  - 14
SP  - 1622
EP  - 1627
DO  - 10.1080/10426914.2017.1279299
ER  - 
@article{
author = "Peruško, Davor and Kovač, Janez and Petrović, Suzana and Obradović, Marko O. and Mitrić, Miodrag and Pavlović, Vladimir B. and Salatić, Branislav and Jaksa, G. and Ciganović, Jovan and Milosavljević, Momir",
year = "2017",
abstract = "Multilayers consisting of five (Al/Ti) bilayers were deposited on (100) silicon wafers. On top was deposited the Ti layer, aimed at preventing Al from diffusing to the surface upon laser treatment. The total thickness of the thin-film structure was 200 nm. Laser irradiations with Nd:YAG picoseconds laser pulses in the defocused regime were performed in air. Laser beam energy was 4 mJ and laser spot diameter on the sample surface was 3 mm (fluence 0.057 J cm(-2)). The samples were treated with different numbers of laser pulses. Structural characterizations were performed by different analytical methods and nano-hardness was also measured. Laser processing induced layer intermixing, formation of titanium aluminides, oxidation of the surface titanium layer and enhanced surface roughness. Aluminum appears at the sample surface only for the highest density of laser irradiation. Laser processing induces increment of nano-hardness by approximately 20% and decrease of residual Youngs modulus for a few percentages from the starting value of the untreated samples. These results can be interesting toward achieving structures with a selective extent of Al-Ti reactivity in this multilayered system, within the development of biocompatible materials.",
journal = "Materials and Manufacturing Processes",
title = "Selective Al-Ti reactivity in laser-processed Al/Ti multilayers",
volume = "32",
number = "14",
pages = "1622-1627",
doi = "10.1080/10426914.2017.1279299"
}
Peruško, D., Kovač, J., Petrović, S., Obradović, M. O., Mitrić, M., Pavlović, V. B., Salatić, B., Jaksa, G., Ciganović, J.,& Milosavljević, M.. (2017). Selective Al-Ti reactivity in laser-processed Al/Ti multilayers. in Materials and Manufacturing Processes, 32(14), 1622-1627.
https://doi.org/10.1080/10426914.2017.1279299
Peruško D, Kovač J, Petrović S, Obradović MO, Mitrić M, Pavlović VB, Salatić B, Jaksa G, Ciganović J, Milosavljević M. Selective Al-Ti reactivity in laser-processed Al/Ti multilayers. in Materials and Manufacturing Processes. 2017;32(14):1622-1627.
doi:10.1080/10426914.2017.1279299 .
Peruško, Davor, Kovač, Janez, Petrović, Suzana, Obradović, Marko O., Mitrić, Miodrag, Pavlović, Vladimir B., Salatić, Branislav, Jaksa, G., Ciganović, Jovan, Milosavljević, Momir, "Selective Al-Ti reactivity in laser-processed Al/Ti multilayers" in Materials and Manufacturing Processes, 32, no. 14 (2017):1622-1627,
https://doi.org/10.1080/10426914.2017.1279299 . .
2
2
2

Influence of substrate temperature and annealing on structural and optical properties of TiO2 films deposited by reactive e-beam evaporation

Pjević, Dejan J.; Marinković, Tijana; Savić, Jasmina; Bundaleski, Nenad; Obradović, Marko O.; Milosavljević, Momir; Kulik, M.

(2015)

TY  - JOUR
AU  - Pjević, Dejan J.
AU  - Marinković, Tijana
AU  - Savić, Jasmina
AU  - Bundaleski, Nenad
AU  - Obradović, Marko O.
AU  - Milosavljević, Momir
AU  - Kulik, M.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7079
AB  - The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO2 thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200-400 degrees C heated substrates. Post-deposition annealing was done for 3 h at 500 degrees C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet-visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O similar to 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase-rutile mixed films were obtained, and in some cases TiO and Ti2O3 phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO2 thin films with defined structure and optical properties. (C) 2015 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Influence of substrate temperature and annealing on structural and optical properties of TiO2 films deposited by reactive e-beam evaporation
VL  - 591
SP  - 224
EP  - 229
DO  - 10.1016/j.tsf.2015.03.012
ER  - 
@article{
author = "Pjević, Dejan J. and Marinković, Tijana and Savić, Jasmina and Bundaleski, Nenad and Obradović, Marko O. and Milosavljević, Momir and Kulik, M.",
year = "2015",
abstract = "The influence of deposition and post-deposition annealing parameters on the structure and optical properties of TiO2 thin films synthesized by reactive e-beam evaporation is reported. Pure Ti (99.9%) was evaporated in oxygen atmosphere to form thin films on Si (100) and glass substrates. Depositions were conducted on substrates held at room temperature and at 200-400 degrees C heated substrates. Post-deposition annealing was done for 3 h at 500 degrees C in air. Compositional and structural studies were performed by Rutherford backscattering spectrometry, X-ray diffraction, and X-ray photoelectron spectroscopy, and optical properties were studied by ultraviolet-visible spectroscopy and analytically by pointwise unconstrained minimization approach method. It was found that both the structure and optical properties of the films are strongly influenced by the deposition and processing parameters. All deposited samples showed good stoichiometry of Ti:O similar to 1:2. Depending on the substrate temperature and oxygen pressure in the chamber during the deposition, anatase-rutile mixed films were obtained, and in some cases TiO and Ti2O3 phases were observed. Substrate deposition temperature appears to play the major role on the final structure of the films, while post-deposition annealing adds up for the lack of oxygen in some cases and invokes crystal grain growth of already initiated phases. The results can be interesting towards the development of TiO2 thin films with defined structure and optical properties. (C) 2015 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Influence of substrate temperature and annealing on structural and optical properties of TiO2 films deposited by reactive e-beam evaporation",
volume = "591",
pages = "224-229",
doi = "10.1016/j.tsf.2015.03.012"
}
Pjević, D. J., Marinković, T., Savić, J., Bundaleski, N., Obradović, M. O., Milosavljević, M.,& Kulik, M.. (2015). Influence of substrate temperature and annealing on structural and optical properties of TiO2 films deposited by reactive e-beam evaporation. in Thin Solid Films, 591, 224-229.
https://doi.org/10.1016/j.tsf.2015.03.012
Pjević DJ, Marinković T, Savić J, Bundaleski N, Obradović MO, Milosavljević M, Kulik M. Influence of substrate temperature and annealing on structural and optical properties of TiO2 films deposited by reactive e-beam evaporation. in Thin Solid Films. 2015;591:224-229.
doi:10.1016/j.tsf.2015.03.012 .
Pjević, Dejan J., Marinković, Tijana, Savić, Jasmina, Bundaleski, Nenad, Obradović, Marko O., Milosavljević, Momir, Kulik, M., "Influence of substrate temperature and annealing on structural and optical properties of TiO2 films deposited by reactive e-beam evaporation" in Thin Solid Films, 591 (2015):224-229,
https://doi.org/10.1016/j.tsf.2015.03.012 . .
14
15
16

Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters

Pjević, Dejan J.; Obradović, Marko O.; Marinković, Tijana; Grce, Ana; Milosavljević, Momir; Grieseler, Rolf; Kups, Thomas; Wilke, Marcus; Schaaf, Peter

(2015)

TY  - JOUR
AU  - Pjević, Dejan J.
AU  - Obradović, Marko O.
AU  - Marinković, Tijana
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Grieseler, Rolf
AU  - Kups, Thomas
AU  - Wilke, Marcus
AU  - Schaaf, Peter
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/436
AB  - The influence of sputtering parameters and annealing on the structure and optical properties of TiO2 thin films deposited by RF magnetron sputtering is reported. A pure TiO2 target was used to deposit the films on Si(100) and glass substrates, and Ar/O-2 gas mixture was used for sputtering. It was found that both the structure and the optical properties of the films depend on deposition parameters and annealing. In all cases the as deposited films were oxygen deficient, which could be compensated by post deposition annealing. Changes in the Ar/O-2 mass flow rate affected the films from an amorphous like structure for samples deposited without oxygen to a structure where nano crystalline Futile phase is detected in those deposited with O-2. Annealing of the samples yielded growth of both, ruffle and anatase phases, the ratio depending on the added oxygen content. Increasing mass flow rate of O-2 and annealing are responsible for lowering of the energy band gap values and the increase in refractive index of the films. The results can be interesting towards the development of TiO2 thin films with defined structure and properties. (C) 2015 Elsevier EN. All rights reserved.
T2  - Physica B: Condensed Matter
T1  - Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters
VL  - 463
SP  - 20
EP  - 25
DO  - 10.1016/j.physb.2015.01.037
ER  - 
@article{
author = "Pjević, Dejan J. and Obradović, Marko O. and Marinković, Tijana and Grce, Ana and Milosavljević, Momir and Grieseler, Rolf and Kups, Thomas and Wilke, Marcus and Schaaf, Peter",
year = "2015",
abstract = "The influence of sputtering parameters and annealing on the structure and optical properties of TiO2 thin films deposited by RF magnetron sputtering is reported. A pure TiO2 target was used to deposit the films on Si(100) and glass substrates, and Ar/O-2 gas mixture was used for sputtering. It was found that both the structure and the optical properties of the films depend on deposition parameters and annealing. In all cases the as deposited films were oxygen deficient, which could be compensated by post deposition annealing. Changes in the Ar/O-2 mass flow rate affected the films from an amorphous like structure for samples deposited without oxygen to a structure where nano crystalline Futile phase is detected in those deposited with O-2. Annealing of the samples yielded growth of both, ruffle and anatase phases, the ratio depending on the added oxygen content. Increasing mass flow rate of O-2 and annealing are responsible for lowering of the energy band gap values and the increase in refractive index of the films. The results can be interesting towards the development of TiO2 thin films with defined structure and properties. (C) 2015 Elsevier EN. All rights reserved.",
journal = "Physica B: Condensed Matter",
title = "Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters",
volume = "463",
pages = "20-25",
doi = "10.1016/j.physb.2015.01.037"
}
Pjević, D. J., Obradović, M. O., Marinković, T., Grce, A., Milosavljević, M., Grieseler, R., Kups, T., Wilke, M.,& Schaaf, P.. (2015). Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters. in Physica B: Condensed Matter, 463, 20-25.
https://doi.org/10.1016/j.physb.2015.01.037
Pjević DJ, Obradović MO, Marinković T, Grce A, Milosavljević M, Grieseler R, Kups T, Wilke M, Schaaf P. Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters. in Physica B: Condensed Matter. 2015;463:20-25.
doi:10.1016/j.physb.2015.01.037 .
Pjević, Dejan J., Obradović, Marko O., Marinković, Tijana, Grce, Ana, Milosavljević, Momir, Grieseler, Rolf, Kups, Thomas, Wilke, Marcus, Schaaf, Peter, "Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters" in Physica B: Condensed Matter, 463 (2015):20-25,
https://doi.org/10.1016/j.physb.2015.01.037 . .
33
29
33

Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system

Obradović, Marko O.; Pjević, Dejan J.; Peruško, Davor; Grce, Ana; Milosavljević, Momir; Homewood, Kevin P.; Siketic, Z.

(2015)

TY  - JOUR
AU  - Obradović, Marko O.
AU  - Pjević, Dejan J.
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Homewood, Kevin P.
AU  - Siketic, Z.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7078
AB  - The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system
VL  - 591
SP  - 164
EP  - 168
DO  - 10.1016/j.tsf.2015.03.074
ER  - 
@article{
author = "Obradović, Marko O. and Pjević, Dejan J. and Peruško, Davor and Grce, Ana and Milosavljević, Momir and Homewood, Kevin P. and Siketic, Z.",
year = "2015",
abstract = "The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system",
volume = "591",
pages = "164-168",
doi = "10.1016/j.tsf.2015.03.074"
}
Obradović, M. O., Pjević, D. J., Peruško, D., Grce, A., Milosavljević, M., Homewood, K. P.,& Siketic, Z.. (2015). Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films, 591, 164-168.
https://doi.org/10.1016/j.tsf.2015.03.074
Obradović MO, Pjević DJ, Peruško D, Grce A, Milosavljević M, Homewood KP, Siketic Z. Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films. 2015;591:164-168.
doi:10.1016/j.tsf.2015.03.074 .
Obradović, Marko O., Pjević, Dejan J., Peruško, Davor, Grce, Ana, Milosavljević, Momir, Homewood, Kevin P., Siketic, Z., "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system" in Thin Solid Films, 591 (2015):164-168,
https://doi.org/10.1016/j.tsf.2015.03.074 . .
16
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17

Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses

Cizmovic, M.; Kovač, Janez; Milosavljević, Momir; Petrović, Suzana; Dražić, Goran; Mitrić, Miodrag; Obradović, Marko O.; Schaaf, P.; Peruško, Davor

(2013)

TY  - JOUR
AU  - Cizmovic, M.
AU  - Kovač, Janez
AU  - Milosavljević, Momir
AU  - Petrović, Suzana
AU  - Dražić, Goran
AU  - Mitrić, Miodrag
AU  - Obradović, Marko O.
AU  - Schaaf, P.
AU  - Peruško, Davor
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7016
AB  - Structural and compositional modifications of multilayered Al/Ti nano-structures induced by nanosecond laser pulses were investigated. Five and ten (Al/Ti) bilayers, with total thicknesses of 130 and 260 nm, respectively, were deposited by dc ion sputtering onto (100) Si wafers. The structures were irradiated in air with nanosecond Nd:YAG unfocused laser pulses. Characterizations of the samples were performed by x-ray diffraction analysis, Auger electron spectroscopy, atomic force microscopy and transmission electron microscopy. It was found that laser treatment of both structures induced complete intermixing of all deposited metallic films, their mixing with silicon substrate and formation of Al-Ti intermetallic and silicide compounds. This effect was achieved even for one applied laser pulse. Comparing these results with that for picosecond laser treatment of similar multilayered structures, it was concluded that materials involved within the heat diffusion length participated in the formation of new phases.
T2  - Physica Scripta
T1  - Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses
VL  - T157
DO  - 10.1088/0031-8949/2013/T157/014008
ER  - 
@article{
author = "Cizmovic, M. and Kovač, Janez and Milosavljević, Momir and Petrović, Suzana and Dražić, Goran and Mitrić, Miodrag and Obradović, Marko O. and Schaaf, P. and Peruško, Davor",
year = "2013",
abstract = "Structural and compositional modifications of multilayered Al/Ti nano-structures induced by nanosecond laser pulses were investigated. Five and ten (Al/Ti) bilayers, with total thicknesses of 130 and 260 nm, respectively, were deposited by dc ion sputtering onto (100) Si wafers. The structures were irradiated in air with nanosecond Nd:YAG unfocused laser pulses. Characterizations of the samples were performed by x-ray diffraction analysis, Auger electron spectroscopy, atomic force microscopy and transmission electron microscopy. It was found that laser treatment of both structures induced complete intermixing of all deposited metallic films, their mixing with silicon substrate and formation of Al-Ti intermetallic and silicide compounds. This effect was achieved even for one applied laser pulse. Comparing these results with that for picosecond laser treatment of similar multilayered structures, it was concluded that materials involved within the heat diffusion length participated in the formation of new phases.",
journal = "Physica Scripta",
title = "Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses",
volume = "T157",
doi = "10.1088/0031-8949/2013/T157/014008"
}
Cizmovic, M., Kovač, J., Milosavljević, M., Petrović, S., Dražić, G., Mitrić, M., Obradović, M. O., Schaaf, P.,& Peruško, D.. (2013). Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses. in Physica Scripta, T157.
https://doi.org/10.1088/0031-8949/2013/T157/014008
Cizmovic M, Kovač J, Milosavljević M, Petrović S, Dražić G, Mitrić M, Obradović MO, Schaaf P, Peruško D. Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses. in Physica Scripta. 2013;T157.
doi:10.1088/0031-8949/2013/T157/014008 .
Cizmovic, M., Kovač, Janez, Milosavljević, Momir, Petrović, Suzana, Dražić, Goran, Mitrić, Miodrag, Obradović, Marko O., Schaaf, P., Peruško, Davor, "Intermixing in Al/Ti multilayer structures induced by nanosecond laser pulses" in Physica Scripta, T157 (2013),
https://doi.org/10.1088/0031-8949/2013/T157/014008 . .
1
1
1

High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers

Milosavljević, Momir; Obradović, Marko O.; Grce, Ana; Peruško, Davor; Pjević, Dejan J.; Kovač, Janez; Dražić, Goran; Jeynes, Chris

(2013)

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Pjević, Dejan J.
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Jeynes, Chris
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7006
AB  - The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers
VL  - 544
SP  - 562
EP  - 566
DO  - 10.1016/j.tsf.2012.12.068
ER  - 
@article{
author = "Milosavljević, Momir and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Pjević, Dejan J. and Kovač, Janez and Dražić, Goran and Jeynes, Chris",
year = "2013",
abstract = "The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers",
volume = "544",
pages = "562-566",
doi = "10.1016/j.tsf.2012.12.068"
}
Milosavljević, M., Obradović, M. O., Grce, A., Peruško, D., Pjević, D. J., Kovač, J., Dražić, G.,& Jeynes, C.. (2013). High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films, 544, 562-566.
https://doi.org/10.1016/j.tsf.2012.12.068
Milosavljević M, Obradović MO, Grce A, Peruško D, Pjević DJ, Kovač J, Dražić G, Jeynes C. High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films. 2013;544:562-566.
doi:10.1016/j.tsf.2012.12.068 .
Milosavljević, Momir, Obradović, Marko O., Grce, Ana, Peruško, Davor, Pjević, Dejan J., Kovač, Janez, Dražić, Goran, Jeynes, Chris, "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers" in Thin Solid Films, 544 (2013):562-566,
https://doi.org/10.1016/j.tsf.2012.12.068 . .
6
6
8

Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers

Milosavljević, Momir; Toprek, Dragan; Obradović, Marko O.; Grce, Ana; Peruško, Davor; Dražić, Goran; Kovač, Janez; Homewood, Kevin P.

(2013)

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Toprek, Dragan
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Dražić, Goran
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5335
AB  - The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers
VL  - 268
SP  - 516
EP  - 523
DO  - 10.1016/j.apsusc.2012.12.158
ER  - 
@article{
author = "Milosavljević, Momir and Toprek, Dragan and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Dražić, Goran and Kovač, Janez and Homewood, Kevin P.",
year = "2013",
abstract = "The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers",
volume = "268",
pages = "516-523",
doi = "10.1016/j.apsusc.2012.12.158"
}
Milosavljević, M., Toprek, D., Obradović, M. O., Grce, A., Peruško, D., Dražić, G., Kovač, J.,& Homewood, K. P.. (2013). Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science, 268, 516-523.
https://doi.org/10.1016/j.apsusc.2012.12.158
Milosavljević M, Toprek D, Obradović MO, Grce A, Peruško D, Dražić G, Kovač J, Homewood KP. Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science. 2013;268:516-523.
doi:10.1016/j.apsusc.2012.12.158 .
Milosavljević, Momir, Toprek, Dragan, Obradović, Marko O., Grce, Ana, Peruško, Davor, Dražić, Goran, Kovač, Janez, Homewood, Kevin P., "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers" in Applied Surface Science, 268 (2013):516-523,
https://doi.org/10.1016/j.apsusc.2012.12.158 . .
15
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15

Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures

Peruško, Davor; Petrović, Suzana; Kovač, Janez; Stojanović, Zoran A.; Panjan, Matjaž; Obradović, Marko O.; Milosavljević, Momir

(2012)

TY  - JOUR
AU  - Peruško, Davor
AU  - Petrović, Suzana
AU  - Kovač, Janez
AU  - Stojanović, Zoran A.
AU  - Panjan, Matjaž
AU  - Obradović, Marko O.
AU  - Milosavljević, Momir
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4769
AB  - In this study, multilayered structures consisting of eight (Al/Ti) bilayers deposited by d.c. ion sputtering onto Si (100) wafers, to a total thickness of similar to 300 nm were treated in air with a picosecond-pulsed Nd:YAG laser in a defocused regime. Irradiation was done with 200 successive pulses, at 1,064-nm wavelength, energy per pulse 15 mJ, the incidence angle of similar to 45 degrees, covering an area of 2-mm in diameter. The samples were analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. It was found that laser irradiation-induced melting and a progressed Al-Ti nanoalloying within the top four bilayers (up to a depth of similar to 150 nm), while the underlying part of the multilayered structure remained intact. Another interesting result is that of a regularly rippled surface topography (similar to 1.4-mu m period and 100-nm amplitude) developed throughout the zone of the melted and reacted material.
T2  - Journal of Materials Science
T1  - Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures
VL  - 47
IS  - 10
SP  - 4488
EP  - 4495
DO  - 10.1007/s10853-012-6311-8
ER  - 
@article{
author = "Peruško, Davor and Petrović, Suzana and Kovač, Janez and Stojanović, Zoran A. and Panjan, Matjaž and Obradović, Marko O. and Milosavljević, Momir",
year = "2012",
abstract = "In this study, multilayered structures consisting of eight (Al/Ti) bilayers deposited by d.c. ion sputtering onto Si (100) wafers, to a total thickness of similar to 300 nm were treated in air with a picosecond-pulsed Nd:YAG laser in a defocused regime. Irradiation was done with 200 successive pulses, at 1,064-nm wavelength, energy per pulse 15 mJ, the incidence angle of similar to 45 degrees, covering an area of 2-mm in diameter. The samples were analyzed by scanning electron microscopy, atomic force microscopy, X-ray photoelectron spectroscopy, and transmission electron microscopy. It was found that laser irradiation-induced melting and a progressed Al-Ti nanoalloying within the top four bilayers (up to a depth of similar to 150 nm), while the underlying part of the multilayered structure remained intact. Another interesting result is that of a regularly rippled surface topography (similar to 1.4-mu m period and 100-nm amplitude) developed throughout the zone of the melted and reacted material.",
journal = "Journal of Materials Science",
title = "Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures",
volume = "47",
number = "10",
pages = "4488-4495",
doi = "10.1007/s10853-012-6311-8"
}
Peruško, D., Petrović, S., Kovač, J., Stojanović, Z. A., Panjan, M., Obradović, M. O.,& Milosavljević, M.. (2012). Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures. in Journal of Materials Science, 47(10), 4488-4495.
https://doi.org/10.1007/s10853-012-6311-8
Peruško D, Petrović S, Kovač J, Stojanović ZA, Panjan M, Obradović MO, Milosavljević M. Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures. in Journal of Materials Science. 2012;47(10):4488-4495.
doi:10.1007/s10853-012-6311-8 .
Peruško, Davor, Petrović, Suzana, Kovač, Janez, Stojanović, Zoran A., Panjan, Matjaž, Obradović, Marko O., Milosavljević, Momir, "Laser-induced formation of intermetallics in multilayered Al/Ti nano-structures" in Journal of Materials Science, 47, no. 10 (2012):4488-4495,
https://doi.org/10.1007/s10853-012-6311-8 . .
13
15
15

Natural and Anthropogenic Radioactivity of Feedstuffs, Mosses and Soil in the Belgrade Environment, Serbia

Grdovic, Svetlana; Vitorovic, Gordana; Mitrovic, Branislava; Andrić, Velibor; Petrujkic, B.; Obradović, Marko O.

(2010)

TY  - JOUR
AU  - Grdovic, Svetlana
AU  - Vitorovic, Gordana
AU  - Mitrovic, Branislava
AU  - Andrić, Velibor
AU  - Petrujkic, B.
AU  - Obradović, Marko O.
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4049
AB  - By gamma spectroscopic measurement a content of natural radio-nuclides ((40)K, (238)U, (226)Ra, (232)Th) and (137)Cs was determined in samples of soil, alfalfa, maize and moss on six sites in the surroundings of Belgrade. Natural radio-nuclides in the soil were at the level characteristic for Serbia, whereas a relatively high level of activity of (137)Cs (around 30 Bq kg(-1)) was determined. On the other hand, in plant samples mostly used as feed (such as alfalfa and maize) the concentration of natural radio-nuclide activity and (137)Cs was relatively low, i.e. below the range of detection. The content of natural radio-nuclides in moss was within the standard range of values specific for Serbia. However, the activity level of (137)Cs in moss gathered from the wider area around Belgrade, was high, the highest measured level being in the Avala-Zuce area (158-221 Bq kg(-1)). Our results show that this radio-nuclide is still present in the living environment of Belgrade even 20 years after the Chernobyl disaster, and that moss is a good indicator of living environment (137)Cs contamination.
T2  - Archives of Biological Sciences
T1  - Natural and Anthropogenic Radioactivity of Feedstuffs, Mosses and Soil in the Belgrade Environment, Serbia
VL  - 62
IS  - 2
SP  - 301
EP  - 307
DO  - 10.2298/ABS1002301G
ER  - 
@article{
author = "Grdovic, Svetlana and Vitorovic, Gordana and Mitrovic, Branislava and Andrić, Velibor and Petrujkic, B. and Obradović, Marko O.",
year = "2010",
abstract = "By gamma spectroscopic measurement a content of natural radio-nuclides ((40)K, (238)U, (226)Ra, (232)Th) and (137)Cs was determined in samples of soil, alfalfa, maize and moss on six sites in the surroundings of Belgrade. Natural radio-nuclides in the soil were at the level characteristic for Serbia, whereas a relatively high level of activity of (137)Cs (around 30 Bq kg(-1)) was determined. On the other hand, in plant samples mostly used as feed (such as alfalfa and maize) the concentration of natural radio-nuclide activity and (137)Cs was relatively low, i.e. below the range of detection. The content of natural radio-nuclides in moss was within the standard range of values specific for Serbia. However, the activity level of (137)Cs in moss gathered from the wider area around Belgrade, was high, the highest measured level being in the Avala-Zuce area (158-221 Bq kg(-1)). Our results show that this radio-nuclide is still present in the living environment of Belgrade even 20 years after the Chernobyl disaster, and that moss is a good indicator of living environment (137)Cs contamination.",
journal = "Archives of Biological Sciences",
title = "Natural and Anthropogenic Radioactivity of Feedstuffs, Mosses and Soil in the Belgrade Environment, Serbia",
volume = "62",
number = "2",
pages = "301-307",
doi = "10.2298/ABS1002301G"
}
Grdovic, S., Vitorovic, G., Mitrovic, B., Andrić, V., Petrujkic, B.,& Obradović, M. O.. (2010). Natural and Anthropogenic Radioactivity of Feedstuffs, Mosses and Soil in the Belgrade Environment, Serbia. in Archives of Biological Sciences, 62(2), 301-307.
https://doi.org/10.2298/ABS1002301G
Grdovic S, Vitorovic G, Mitrovic B, Andrić V, Petrujkic B, Obradović MO. Natural and Anthropogenic Radioactivity of Feedstuffs, Mosses and Soil in the Belgrade Environment, Serbia. in Archives of Biological Sciences. 2010;62(2):301-307.
doi:10.2298/ABS1002301G .
Grdovic, Svetlana, Vitorovic, Gordana, Mitrovic, Branislava, Andrić, Velibor, Petrujkic, B., Obradović, Marko O., "Natural and Anthropogenic Radioactivity of Feedstuffs, Mosses and Soil in the Belgrade Environment, Serbia" in Archives of Biological Sciences, 62, no. 2 (2010):301-307,
https://doi.org/10.2298/ABS1002301G . .
15
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21