TY  - JOUR
AU  - Spreitzer, Matjaž
AU  - Klement, Dejan
AU  - Parkelj Potočnik, Tjaša
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran M.
AU  - Nguyen, Minh Duc
AU  - Yuan, Huiyu
AU  - Ten Elshof, Johan Evert
AU  - Houwman, Evert
AU  - Koster, Gertjan
AU  - Rijnders, Guus
AU  - Fompeyrine, Jean
AU  - Kornblum, Lior
AU  - Fenning, David P.
AU  - Liang, Yunting
AU  - Tong, Wen-Yi
AU  - Ghosez, Philippe
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9627
AB  - Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).
T2  - APL Materials
T1  - Epitaxial ferroelectric oxides on silicon with perspectives for future device applications
VL  - 9
IS  - 4
SP  - 040701
DO  - 10.1063/5.0039161
ER  - 

@article{
author = "Spreitzer, Matjaž and Klement, Dejan and Parkelj Potočnik, Tjaša and Trstenjak, Urška and Jovanović, Zoran M. and Nguyen, Minh Duc and Yuan, Huiyu and Ten Elshof, Johan Evert and Houwman, Evert and Koster, Gertjan and Rijnders, Guus and Fompeyrine, Jean and Kornblum, Lior and Fenning, David P. and Liang, Yunting and Tong, Wen-Yi and Ghosez, Philippe",
year = "2021",
abstract = "Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).",
journal = "APL Materials",
title = "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications",
volume = "9",
number = "4",
pages = "040701",
doi = "10.1063/5.0039161"
}

Spreitzer, M., Klement, D., Parkelj Potočnik, T., Trstenjak, U., Jovanović, Z. M., Nguyen, M. D., Yuan, H., Ten Elshof, J. E., Houwman, E., Koster, G., Rijnders, G., Fompeyrine, J., Kornblum, L., Fenning, D. P., Liang, Y., Tong, W.,& Ghosez, P.. (2021). Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials, 9(4), 040701.
https://doi.org/10.1063/5.0039161

Spreitzer M, Klement D, Parkelj Potočnik T, Trstenjak U, Jovanović ZM, Nguyen MD, Yuan H, Ten Elshof JE, Houwman E, Koster G, Rijnders G, Fompeyrine J, Kornblum L, Fenning DP, Liang Y, Tong W, Ghosez P. Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials. 2021;9(4):040701.
doi:10.1063/5.0039161 .

Spreitzer, Matjaž, Klement, Dejan, Parkelj Potočnik, Tjaša, Trstenjak, Urška, Jovanović, Zoran M., Nguyen, Minh Duc, Yuan, Huiyu, Ten Elshof, Johan Evert, Houwman, Evert, Koster, Gertjan, Rijnders, Guus, Fompeyrine, Jean, Kornblum, Lior, Fenning, David P., Liang, Yunting, Tong, Wen-Yi, Ghosez, Philippe, "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications" in APL Materials, 9, no. 4 (2021):040701,
https://doi.org/10.1063/5.0039161 . .

TY  - JOUR
AU  - Jovanović, Zoran M.
AU  - Spreitzer, Matjaž
AU  - Kovač, Janez
AU  - Klement, Dejan
AU  - Suvorov, Danilo
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/230
AB  - The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using Sr-induced deoxidation. The manipulation of metallic Sr is nevertheless very delicate and requires alternative buffer materials. In the present study the applicability of the chemically much more stable SrO in the process of native-oxide removal and silicon-surface stabilization was investigated using the pulsed-laser deposition technique (PLD), while the as-derived surfaces were analyzed in situ using reflection high-energy electron diffraction and ex situ using X-ray photoelectron spectroscopy, X-ray reflectivity, and atomic force microscopy. After the deposition of the SrO over Si/SiO2, in a vacuum, different annealing conditions, with the temperature ranging up to 850 degrees C, were applied. Because the deposition took place in a vacuum, a multilayer composed of SrO, Sr-silicate, modified Si, and Si as a substrate was initially formed. During the subsequent annealing the topmost layer epitaxially orders in the form of islands, while a further increase in the annealing temperature induced rapid desorption and surface deoxidation, leading to a 2 x 1 Sr-reconstructed silicon surface. However, the process is accompanied by distinctive surface roughening, and therefore the experimental conditions must be carefully optimized to minimize the effect. The results of the study revealed, for the first time, an effective pathway for the preparation of a SrO-induced buffer layer on a silicon substrate using PLD, which can be subsequently utilized for the epitaxial growth of functional oxides.
T2  - ACS Applied Materials and Interfaces
T1  - Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique
VL  - 6
IS  - 20
SP  - 18205
EP  - 18214
DO  - 10.1021/am505202p
ER  - 

@article{
author = "Jovanović, Zoran M. and Spreitzer, Matjaž and Kovač, Janez and Klement, Dejan and Suvorov, Danilo",
year = "2014",
abstract = "The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using Sr-induced deoxidation. The manipulation of metallic Sr is nevertheless very delicate and requires alternative buffer materials. In the present study the applicability of the chemically much more stable SrO in the process of native-oxide removal and silicon-surface stabilization was investigated using the pulsed-laser deposition technique (PLD), while the as-derived surfaces were analyzed in situ using reflection high-energy electron diffraction and ex situ using X-ray photoelectron spectroscopy, X-ray reflectivity, and atomic force microscopy. After the deposition of the SrO over Si/SiO2, in a vacuum, different annealing conditions, with the temperature ranging up to 850 degrees C, were applied. Because the deposition took place in a vacuum, a multilayer composed of SrO, Sr-silicate, modified Si, and Si as a substrate was initially formed. During the subsequent annealing the topmost layer epitaxially orders in the form of islands, while a further increase in the annealing temperature induced rapid desorption and surface deoxidation, leading to a 2 x 1 Sr-reconstructed silicon surface. However, the process is accompanied by distinctive surface roughening, and therefore the experimental conditions must be carefully optimized to minimize the effect. The results of the study revealed, for the first time, an effective pathway for the preparation of a SrO-induced buffer layer on a silicon substrate using PLD, which can be subsequently utilized for the epitaxial growth of functional oxides.",
journal = "ACS Applied Materials and Interfaces",
title = "Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique",
volume = "6",
number = "20",
pages = "18205-18214",
doi = "10.1021/am505202p"
}

Jovanović, Z. M., Spreitzer, M., Kovač, J., Klement, D.,& Suvorov, D.. (2014). Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique. in ACS Applied Materials and Interfaces, 6(20), 18205-18214.
https://doi.org/10.1021/am505202p

Jovanović ZM, Spreitzer M, Kovač J, Klement D, Suvorov D. Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique. in ACS Applied Materials and Interfaces. 2014;6(20):18205-18214.
doi:10.1021/am505202p .

Jovanović, Zoran M., Spreitzer, Matjaž, Kovač, Janez, Klement, Dejan, Suvorov, Danilo, "Silicon Surface Deoxidation Using Strontium Oxide Deposited with the Pulsed Laser Deposition Technique" in ACS Applied Materials and Interfaces, 6, no. 20 (2014):18205-18214,
https://doi.org/10.1021/am505202p . .