TY  - JOUR
AU  - Petrović, Suzana
AU  - Peruško, Davor
AU  - Gaković, Biljana M.
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Zalar, A.
AU  - Milinović, Velimir
AU  - Bogdanović-Radović, Ivančica
AU  - Milosavljević, Momir
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6861
AB  - In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved.
T2  - Surface and Coatings Technology
T1  - Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films
VL  - 204
IS  - 12-13
SP  - 2099
EP  - 2102
DO  - 10.1016/j.surfcoat.2009.09.048
ER  - 

@article{
author = "Petrović, Suzana and Peruško, Davor and Gaković, Biljana M. and Mitrić, Miodrag and Kovač, Janez and Zalar, A. and Milinović, Velimir and Bogdanović-Radović, Ivančica and Milosavljević, Momir",
year = "2010",
abstract = "In this work we have studied the influence of thermal annealing on the structural and electrical properties of W-Ti thin films, deposited on n-type (100) silicon wafers. The films were deposited by d.c. sputtering from a 90:10 wt.%W-Ti target, using Ar ions, to a thickness of similar to 170 nm. After deposition the samples were annealed at 400 to 700 degrees C for 60 min, in a nitrogen ambient. Structural characterizations were performed by X-ray photoelectron spectroscopy (XPS), Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM). A four-point probe was used for electrical characterization. It was found that the as-deposited films exhibit a polycrystalline structure in the form of columnar grains (2050 nm in diameter). Only b.c.c. W phase could be registered in the films, while any presence of crystalline Ti was hindered in XRD and electron diffraction patterns. Annealing at up to 600 degrees C resulted in an increase of the mean grain size in the films, and a decrease of their sheet resistance. For these annealing temperatures we did not register any interaction at the W-Ti/Si interface. However. upon annealing at 700 degrees C, a progressed interaction between the film and the substrate occurred. Structural analyses suggest the formation of both W and Ti silicides. The estimated thickness of the formed metal-silicide layer is approximately 125 nm. Sheet resistance increased rapidly after annealing at 700 degrees C, because a large portion of the original metallic film was consumed in the reaction with silicon. (C) 2009 Elsevier B.V. All rights reserved.",
journal = "Surface and Coatings Technology",
title = "Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films",
volume = "204",
number = "12-13",
pages = "2099-2102",
doi = "10.1016/j.surfcoat.2009.09.048"
}

Petrović, S., Peruško, D., Gaković, B. M., Mitrić, M., Kovač, J., Zalar, A., Milinović, V., Bogdanović-Radović, I.,& Milosavljević, M.. (2010). Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films. in Surface and Coatings Technology, 204(12-13), 2099-2102.
https://doi.org/10.1016/j.surfcoat.2009.09.048

Petrović S, Peruško D, Gaković BM, Mitrić M, Kovač J, Zalar A, Milinović V, Bogdanović-Radović I, Milosavljević M. Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films. in Surface and Coatings Technology. 2010;204(12-13):2099-2102.
doi:10.1016/j.surfcoat.2009.09.048 .

Petrović, Suzana, Peruško, Davor, Gaković, Biljana M., Mitrić, Miodrag, Kovač, Janez, Zalar, A., Milinović, Velimir, Bogdanović-Radović, Ivančica, Milosavljević, Momir, "Effects of thermal annealing on structural and electrical properties of sputtered W-Ti thin films" in Surface and Coatings Technology, 204, no. 12-13 (2010):2099-2102,
https://doi.org/10.1016/j.surfcoat.2009.09.048 . .

TY  - JOUR
AU  - Peruško, Davor
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Timotijević, B.
AU  - Zalar, A.
AU  - Kovač, Janez
AU  - Pracek, B.
AU  - Jeynes, C.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6768
AB  - We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - High fluence nitrogen implantation in Al/Ti multilayers
VL  - 266
IS  - 10
SP  - 2503
EP  - 2506
DO  - 10.1016/j.nimb.2008.03.034
ER  - 

@article{
author = "Peruško, Davor and Milosavljević, Momir and Milinović, Velimir and Timotijević, B. and Zalar, A. and Kovač, Janez and Pracek, B. and Jeynes, C.",
year = "2008",
abstract = "We have studied the effects of high fluence nitrogen ion implantation on the structural changes in Al/Ti multilayers, with the aim of achieving multilayered metal-nitrides. The starting structures consisted of 10 alternate sputter-deposited Al and Ti films, with a total thickness of 270 nm, on (100) Si substrates. They were implanted with 200 keV N-2(+), to 1 x 10(17) and 2 x 10(17) at/cm(2), the projected range being around half-depth of the multilayers. Structural characterization was performed by Rutherford backscattering, Auger electron spectroscopy and transmission electron microscopy. It was found that ion implantation to the higher fluence induces a full intermixing of Al/Ti layers, resulting in a multilayered structure with different content of Al, Ti and N. The applied method can be interesting for preparation of graded (AI,Ti)N multilayers, with a controlled content of nitrogen and a controlled level of Al-Ti intermixing within the structures. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "High fluence nitrogen implantation in Al/Ti multilayers",
volume = "266",
number = "10",
pages = "2503-2506",
doi = "10.1016/j.nimb.2008.03.034"
}

Peruško, D., Milosavljević, M., Milinović, V., Timotijević, B., Zalar, A., Kovač, J., Pracek, B.,& Jeynes, C.. (2008). High fluence nitrogen implantation in Al/Ti multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2503-2506.
https://doi.org/10.1016/j.nimb.2008.03.034

Peruško D, Milosavljević M, Milinović V, Timotijević B, Zalar A, Kovač J, Pracek B, Jeynes C. High fluence nitrogen implantation in Al/Ti multilayers. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2503-2506.
doi:10.1016/j.nimb.2008.03.034 .

Peruško, Davor, Milosavljević, Momir, Milinović, Velimir, Timotijević, B., Zalar, A., Kovač, Janez, Pracek, B., Jeynes, C., "High fluence nitrogen implantation in Al/Ti multilayers" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2503-2506,
https://doi.org/10.1016/j.nimb.2008.03.034 . .

TY  - JOUR
AU  - Bundaleski, Nenad
AU  - Petrović, Suzana
AU  - Peruško, Davor
AU  - Kovač, Janez
AU  - Zalar, A.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3498
AB  - Tungsten-titanium (W-Ti) thin film was deposited by dc Ar(+) sputtering of W(70 at.%)-Ti(30 at.%) target. The thin film composition, determined by X-ray photoelectron spectroscopy (XPS) depth pro. ling, is W((0.77 +/- 0.07)) Ti((0.08 +/- 0.03))O((0.15 +/- 0.03)). The presence of oxygen in the deposit is due to the rather poor vacuum conditions during the deposition, while significant deficiency of Ti, as compared to the sputtering target composition cannot be explained straightforwardly. Monte Carlo simulations of both, transport of sputtered particles from target to the substrate through the background gas (SRIM 2003 program) and thin film sputtering during the XPS depth pro. ling ( program TRIDYN_FZR) are presented. The simulations show that the particle transport through the background gas is mainly responsible for the Ti depletion: the estimated composition of the thin film is W(0.61)Ti(0.16)O(0.23). Additional apparent Ti depletion occurs due to the preferential sputtering during the thin film composition analysis. The simulation of the sputtering process show that the surface concentration measured by XPS should be about W(0.74)Ti(0.11)O(0.15). The discrepancy between the estimated surface composition and the actual experimental result is in the range of the experimental error. (c) 2008 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Composition of the sputter deposited W-Ti thin films
VL  - 254
IS  - 20
SP  - 6390
EP  - 6394
DO  - 10.1016/j.apsusc.2008.03.179
ER  - 

@article{
author = "Bundaleski, Nenad and Petrović, Suzana and Peruško, Davor and Kovač, Janez and Zalar, A.",
year = "2008",
abstract = "Tungsten-titanium (W-Ti) thin film was deposited by dc Ar(+) sputtering of W(70 at.%)-Ti(30 at.%) target. The thin film composition, determined by X-ray photoelectron spectroscopy (XPS) depth pro. ling, is W((0.77 +/- 0.07)) Ti((0.08 +/- 0.03))O((0.15 +/- 0.03)). The presence of oxygen in the deposit is due to the rather poor vacuum conditions during the deposition, while significant deficiency of Ti, as compared to the sputtering target composition cannot be explained straightforwardly. Monte Carlo simulations of both, transport of sputtered particles from target to the substrate through the background gas (SRIM 2003 program) and thin film sputtering during the XPS depth pro. ling ( program TRIDYN_FZR) are presented. The simulations show that the particle transport through the background gas is mainly responsible for the Ti depletion: the estimated composition of the thin film is W(0.61)Ti(0.16)O(0.23). Additional apparent Ti depletion occurs due to the preferential sputtering during the thin film composition analysis. The simulation of the sputtering process show that the surface concentration measured by XPS should be about W(0.74)Ti(0.11)O(0.15). The discrepancy between the estimated surface composition and the actual experimental result is in the range of the experimental error. (c) 2008 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Composition of the sputter deposited W-Ti thin films",
volume = "254",
number = "20",
pages = "6390-6394",
doi = "10.1016/j.apsusc.2008.03.179"
}

Bundaleski, N., Petrović, S., Peruško, D., Kovač, J.,& Zalar, A.. (2008). Composition of the sputter deposited W-Ti thin films. in Applied Surface Science, 254(20), 6390-6394.
https://doi.org/10.1016/j.apsusc.2008.03.179

Bundaleski N, Petrović S, Peruško D, Kovač J, Zalar A. Composition of the sputter deposited W-Ti thin films. in Applied Surface Science. 2008;254(20):6390-6394.
doi:10.1016/j.apsusc.2008.03.179 .

Bundaleski, Nenad, Petrović, Suzana, Peruško, Davor, Kovač, Janez, Zalar, A., "Composition of the sputter deposited W-Ti thin films" in Applied Surface Science, 254, no. 20 (2008):6390-6394,
https://doi.org/10.1016/j.apsusc.2008.03.179 . .

TY  - JOUR
AU  - Petrović, Suzana
AU  - Bundaleski, Nenad
AU  - Radović, Marko B.
AU  - Ristić, Zoran
AU  - Gligorić, Goran
AU  - Peruško, Davor
AU  - Mitrić, Miodrag
AU  - Pracek, B.
AU  - Zalar, A.
AU  - Rakočević, Zlatko Lj.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6652
AB  - Nichrome coatings have been deposited using the d.c. sputtering of the target (80% Ni-20% Cr wt.) by Ar+ ions at a working pressure of 10(-1) Pa and at room temperature. After the air exposure of samples at room temperature, their phase composition and structure was studied by X-ray diffraction, while the surface elemental composition was determined by low energy ion scattering (LEIS) and Auger electron spectroscopy (AES). AES has been also used for the bulk composition analysis. There is a significant difference between the compositions of the surface and of the bulk. Surface segregation of chromium was observed using both LEIS and AES, and it was found that the chromium concentration increases with that of oxygen adsorbed at the surface during the air exposure. The nichrome surface composition is qualitatively the same as in the case of its exposure to O-2 at room temperature, but significantly different from that of the thermally annealed nichrome to 400 degrees C in air. (c) 2006 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Surface composition and structure of Ni-Cr sputtered coatings exposed in air at room temperature
VL  - 256
IS  - 1
SP  - 368
EP  - 372
DO  - 10.1016/j.nimb.2006.12.030
ER  - 

@article{
author = "Petrović, Suzana and Bundaleski, Nenad and Radović, Marko B. and Ristić, Zoran and Gligorić, Goran and Peruško, Davor and Mitrić, Miodrag and Pracek, B. and Zalar, A. and Rakočević, Zlatko Lj.",
year = "2007",
abstract = "Nichrome coatings have been deposited using the d.c. sputtering of the target (80% Ni-20% Cr wt.) by Ar+ ions at a working pressure of 10(-1) Pa and at room temperature. After the air exposure of samples at room temperature, their phase composition and structure was studied by X-ray diffraction, while the surface elemental composition was determined by low energy ion scattering (LEIS) and Auger electron spectroscopy (AES). AES has been also used for the bulk composition analysis. There is a significant difference between the compositions of the surface and of the bulk. Surface segregation of chromium was observed using both LEIS and AES, and it was found that the chromium concentration increases with that of oxygen adsorbed at the surface during the air exposure. The nichrome surface composition is qualitatively the same as in the case of its exposure to O-2 at room temperature, but significantly different from that of the thermally annealed nichrome to 400 degrees C in air. (c) 2006 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Surface composition and structure of Ni-Cr sputtered coatings exposed in air at room temperature",
volume = "256",
number = "1",
pages = "368-372",
doi = "10.1016/j.nimb.2006.12.030"
}

Petrović, S., Bundaleski, N., Radović, M. B., Ristić, Z., Gligorić, G., Peruško, D., Mitrić, M., Pracek, B., Zalar, A.,& Rakočević, Z. Lj.. (2007). Surface composition and structure of Ni-Cr sputtered coatings exposed in air at room temperature. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 256(1), 368-372.
https://doi.org/10.1016/j.nimb.2006.12.030

Petrović S, Bundaleski N, Radović MB, Ristić Z, Gligorić G, Peruško D, Mitrić M, Pracek B, Zalar A, Rakočević ZL. Surface composition and structure of Ni-Cr sputtered coatings exposed in air at room temperature. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2007;256(1):368-372.
doi:10.1016/j.nimb.2006.12.030 .

Petrović, Suzana, Bundaleski, Nenad, Radović, Marko B., Ristić, Zoran, Gligorić, Goran, Peruško, Davor, Mitrić, Miodrag, Pracek, B., Zalar, A., Rakočević, Zlatko Lj., "Surface composition and structure of Ni-Cr sputtered coatings exposed in air at room temperature" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 256, no. 1 (2007):368-372,
https://doi.org/10.1016/j.nimb.2006.12.030 . .

TY  - JOUR
AU  - Štrbac, Svetlana
AU  - Petrović, Suzana
AU  - Vasilic, R.
AU  - Kovač, Janez
AU  - Zalar, A.
AU  - Rakočević, Zlatko Lj.
PY  - 2007
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3325
AB  - Platinum is deposited spontaneously on Au(1 1 1) surface from 1 mM H-2 PtCl6 + 1 M HClO4 solution using multiple deposition procedure. X-ray photoelectron spectroscopy (XPS) analysis has shown that after immersion into the Pt containing solution and rinsing with water, Pt(OH)(2) resides on the Au(1 1 1) substrate. Consecutive depositions as well as in situ scanning tunneling microscopy (STM) and electrochemical measurements are performed on previously electrochemically reduced Pt/Au(1 1 1) surfaces. Only homogeneous distribution of thus deposited Pt islands is observed by in situ STM. With subsequent depositions, the width of deposited Pt islands increases, but stays lower than 10 nm, while a significant increase of Pt islands height is observed, leading to moderate increase of the coverage. Cyclic voltammetry (CV) profiles of obtained Pt/Au(1 1 1) surfaces, and CO stripping curves are recorded in 0.5 M H2SO4 solution. CO oxidation takes place only at higher potentials shifting negatively with increasing coverage. This is discussed with respect to Pt islands width and height distributions and to the influence of the Au(I 11) substrate surface. (C) 2007 Elsevier Ltd. All rights reserved.
T2  - Electrochimica Acta
T1  - Carbon monoxide oxidation on Au(111) surface decorated by spontaneously deposited Pt
VL  - 53
IS  - 2
SP  - 998
EP  - 1005
DO  - 10.1016/j.electacta.2007.08.019
ER  - 

@article{
author = "Štrbac, Svetlana and Petrović, Suzana and Vasilic, R. and Kovač, Janez and Zalar, A. and Rakočević, Zlatko Lj.",
year = "2007",
abstract = "Platinum is deposited spontaneously on Au(1 1 1) surface from 1 mM H-2 PtCl6 + 1 M HClO4 solution using multiple deposition procedure. X-ray photoelectron spectroscopy (XPS) analysis has shown that after immersion into the Pt containing solution and rinsing with water, Pt(OH)(2) resides on the Au(1 1 1) substrate. Consecutive depositions as well as in situ scanning tunneling microscopy (STM) and electrochemical measurements are performed on previously electrochemically reduced Pt/Au(1 1 1) surfaces. Only homogeneous distribution of thus deposited Pt islands is observed by in situ STM. With subsequent depositions, the width of deposited Pt islands increases, but stays lower than 10 nm, while a significant increase of Pt islands height is observed, leading to moderate increase of the coverage. Cyclic voltammetry (CV) profiles of obtained Pt/Au(1 1 1) surfaces, and CO stripping curves are recorded in 0.5 M H2SO4 solution. CO oxidation takes place only at higher potentials shifting negatively with increasing coverage. This is discussed with respect to Pt islands width and height distributions and to the influence of the Au(I 11) substrate surface. (C) 2007 Elsevier Ltd. All rights reserved.",
journal = "Electrochimica Acta",
title = "Carbon monoxide oxidation on Au(111) surface decorated by spontaneously deposited Pt",
volume = "53",
number = "2",
pages = "998-1005",
doi = "10.1016/j.electacta.2007.08.019"
}

Štrbac, S., Petrović, S., Vasilic, R., Kovač, J., Zalar, A.,& Rakočević, Z. Lj.. (2007). Carbon monoxide oxidation on Au(111) surface decorated by spontaneously deposited Pt. in Electrochimica Acta, 53(2), 998-1005.
https://doi.org/10.1016/j.electacta.2007.08.019

Štrbac S, Petrović S, Vasilic R, Kovač J, Zalar A, Rakočević ZL. Carbon monoxide oxidation on Au(111) surface decorated by spontaneously deposited Pt. in Electrochimica Acta. 2007;53(2):998-1005.
doi:10.1016/j.electacta.2007.08.019 .

Štrbac, Svetlana, Petrović, Suzana, Vasilic, R., Kovač, Janez, Zalar, A., Rakočević, Zlatko Lj., "Carbon monoxide oxidation on Au(111) surface decorated by spontaneously deposited Pt" in Electrochimica Acta, 53, no. 2 (2007):998-1005,
https://doi.org/10.1016/j.electacta.2007.08.019 . .