Grotzschel, Rainer

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  • Grotzschel, Rainer (2)
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A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV

Kokkoris, Michael; Perdikakis, Georgios; Kossionides, S; Petrović, Srđan M.; Vlastou, R.; Grotzschel, Rainer

(2004)

TY  - JOUR
AU  - Kokkoris, Michael
AU  - Perdikakis, Georgios
AU  - Kossionides, S
AU  - Petrović, Srđan M.
AU  - Vlastou, R.
AU  - Grotzschel, Rainer
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6449
AB  - In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytype crystals (namely 4H and 6H) in the energy range E-P = 400-650 keV, in the backscattering geometry, were taken and analyzed. Computer simulations are in very good agreement with the measured spectra. The accurate reproduction of the experimental channeling spectra in the backscattering geometry is strongly based on the investigation of the correct dechanneling function and a, the ratio of the stopping powers in the aligned and random mode. In the present work, the applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined, and the results are compared to the ones obtained in the past, concerning the same polytype structures, based on the assumption that the dechanneling of protons follows an exponential law, for the energy range E-P = 1.7-2.4 MeV.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV
VL  - 219
SP  - 226
EP  - 231
DO  - 10.1016/j.nimb.2004.01.058
ER  - 
@article{
author = "Kokkoris, Michael and Perdikakis, Georgios and Kossionides, S and Petrović, Srđan M. and Vlastou, R. and Grotzschel, Rainer",
year = "2004",
abstract = "In the present work, the energy spectra of protons channeled along the (0 0 0 1) axis of SiC polytype crystals (namely 4H and 6H) in the energy range E-P = 400-650 keV, in the backscattering geometry, were taken and analyzed. Computer simulations are in very good agreement with the measured spectra. The accurate reproduction of the experimental channeling spectra in the backscattering geometry is strongly based on the investigation of the correct dechanneling function and a, the ratio of the stopping powers in the aligned and random mode. In the present work, the applicability of a Gompertz type sigmoidal dechanneling function, with two parameters, k and x(c), which represent characteristic dechanneling rate and range, respectively, is examined, and the results are compared to the ones obtained in the past, concerning the same polytype structures, based on the assumption that the dechanneling of protons follows an exponential law, for the energy range E-P = 1.7-2.4 MeV.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV",
volume = "219",
pages = "226-231",
doi = "10.1016/j.nimb.2004.01.058"
}
Kokkoris, M., Perdikakis, G., Kossionides, S., Petrović, S. M., Vlastou, R.,& Grotzschel, R.. (2004). A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 219, 226-231.
https://doi.org/10.1016/j.nimb.2004.01.058
Kokkoris M, Perdikakis G, Kossionides S, Petrović SM, Vlastou R, Grotzschel R. A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2004;219:226-231.
doi:10.1016/j.nimb.2004.01.058 .
Kokkoris, Michael, Perdikakis, Georgios, Kossionides, S, Petrović, Srđan M., Vlastou, R., Grotzschel, Rainer, "A study of the dechanneling of protons in SiC polytype crystals in the energy range Ep=400-650 keV" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 219 (2004):226-231,
https://doi.org/10.1016/j.nimb.2004.01.058 . .
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Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry

Kokkoris, Michael; Kossionides, S; Vlastou, R.; Aslanoglou, X.A.; Grotzschel, Rainer; Nsouli, Bilal; Kuznetsov, Andrej Yu; Petrović, Srđan M.; Paradellis, T.

(2001)

TY  - JOUR
AU  - Kokkoris, Michael
AU  - Kossionides, S
AU  - Vlastou, R.
AU  - Aslanoglou, X.A.
AU  - Grotzschel, Rainer
AU  - Nsouli, Bilal
AU  - Kuznetsov, Andrej Yu
AU  - Petrović, Srđan M.
AU  - Paradellis, T.
PY  - 2001
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2476
AB  - Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely 4H, 6H, 15R, 21R) in the energy region E-p = 1.7-2.5 MeV, in the backscattering geometry, were taken and analyzed. Computer simulations based on the assumption that the dechanneling of protons follows an exponential law are in very good agreement with the measured spectra. The obtained results for the two crucial channeling parameters, gimel, the mean channeling distance, and, alpha, the ratio of the stopping powers in the aligned and random mode are compared for the different structures and an attempt is made to explain the occurring similarities as well as the differences, in order to evaluate the use of SiC polytypes as substrates in implantations and thin film depositions. An attempt is also made to correlate the results from the present work to the ones obtained in the past for simpler crystallographic structures, namely Si(100) and Si(111), as well as more complex ones, such as SiO2 (c-axis).
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry
VL  - 184
IS  - 3
SP  - 319
EP  - 326
DO  - 10.1016/S0168-583X(01)00727-3
ER  - 
@article{
author = "Kokkoris, Michael and Kossionides, S and Vlastou, R. and Aslanoglou, X.A. and Grotzschel, Rainer and Nsouli, Bilal and Kuznetsov, Andrej Yu and Petrović, Srđan M. and Paradellis, T.",
year = "2001",
abstract = "Energy spectra of protons channeling along the (0001) axis of several SiC polytype crystals (namely 4H, 6H, 15R, 21R) in the energy region E-p = 1.7-2.5 MeV, in the backscattering geometry, were taken and analyzed. Computer simulations based on the assumption that the dechanneling of protons follows an exponential law are in very good agreement with the measured spectra. The obtained results for the two crucial channeling parameters, gimel, the mean channeling distance, and, alpha, the ratio of the stopping powers in the aligned and random mode are compared for the different structures and an attempt is made to explain the occurring similarities as well as the differences, in order to evaluate the use of SiC polytypes as substrates in implantations and thin film depositions. An attempt is also made to correlate the results from the present work to the ones obtained in the past for simpler crystallographic structures, namely Si(100) and Si(111), as well as more complex ones, such as SiO2 (c-axis).",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry",
volume = "184",
number = "3",
pages = "319-326",
doi = "10.1016/S0168-583X(01)00727-3"
}
Kokkoris, M., Kossionides, S., Vlastou, R., Aslanoglou, X.A., Grotzschel, R., Nsouli, B., Kuznetsov, A. Y., Petrović, S. M.,& Paradellis, T.. (2001). Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 184(3), 319-326.
https://doi.org/10.1016/S0168-583X(01)00727-3
Kokkoris M, Kossionides S, Vlastou R, Aslanoglou X, Grotzschel R, Nsouli B, Kuznetsov AY, Petrović SM, Paradellis T. Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2001;184(3):319-326.
doi:10.1016/S0168-583X(01)00727-3 .
Kokkoris, Michael, Kossionides, S, Vlastou, R., Aslanoglou, X.A., Grotzschel, Rainer, Nsouli, Bilal, Kuznetsov, Andrej Yu, Petrović, Srđan M., Paradellis, T., "Determination of parameters for channeling of protons in SiC polytype crystals in the backscattering geometry" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 184, no. 3 (2001):319-326,
https://doi.org/10.1016/S0168-583X(01)00727-3 . .
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