Spassov, Dentcho

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  • Spassov, Dentcho (1)
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Author's Bibliography

Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks

Spassov, Dentcho; Paskaleva, Albena; Davidović, Vojkan S.; Đorić-Veljković, Snežana M.; Stanković, Srboljub J.; Stojadinović, Ninoslav D.; Ivanov, Tzvetan E.; Stanchev, T.

(IEEE, 2019)

TY  - CONF
AU  - Spassov, Dentcho
AU  - Paskaleva, Albena
AU  - Davidović, Vojkan S.
AU  - Đorić-Veljković, Snežana M.
AU  - Stanković, Srboljub J.
AU  - Stojadinović, Ninoslav D.
AU  - Ivanov, Tzvetan E.
AU  - Stanchev, T.
PY  - 2019
UR  - https://ieeexplore.ieee.org/document/8889600/
UR  - http://vinar.vin.bg.ac.rs/handle/123456789/8658
AB  - The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics (MIEL)
T1  - Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks
SP  - 59
EP  - 62
DO  - 10.1109/MIEL.2019.8889600
ER  - 
@conference{
author = "Spassov, Dentcho and Paskaleva, Albena and Davidović, Vojkan S. and Đorić-Veljković, Snežana M. and Stanković, Srboljub J. and Stojadinović, Ninoslav D. and Ivanov, Tzvetan E. and Stanchev, T.",
year = "2019",
abstract = "The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics (MIEL)",
title = "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks",
pages = "59-62",
doi = "10.1109/MIEL.2019.8889600"
}
Spassov, D., Paskaleva, A., Davidović, V. S., Đorić-Veljković, S. M., Stanković, S. J., Stojadinović, N. D., Ivanov, T. E.,& Stanchev, T.. (2019). Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. in 2019 IEEE 31st International Conference on Microelectronics (MIEL)
IEEE., 59-62.
https://doi.org/10.1109/MIEL.2019.8889600
Spassov D, Paskaleva A, Davidović VS, Đorić-Veljković SM, Stanković SJ, Stojadinović ND, Ivanov TE, Stanchev T. Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. in 2019 IEEE 31st International Conference on Microelectronics (MIEL). 2019;:59-62.
doi:10.1109/MIEL.2019.8889600 .
Spassov, Dentcho, Paskaleva, Albena, Davidović, Vojkan S., Đorić-Veljković, Snežana M., Stanković, Srboljub J., Stojadinović, Ninoslav D., Ivanov, Tzvetan E., Stanchev, T., "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks" in 2019 IEEE 31st International Conference on Microelectronics (MIEL) (2019):59-62,
https://doi.org/10.1109/MIEL.2019.8889600 . .
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