TY  - JOUR
AU  - Galović, Slobodanka
AU  - Đorđević, Katarina Lj.
AU  - Nešić, Mioljub V.
AU  - Popović, Marica N.
AU  - Markushev, Dragan D.
AU  - Markushev, Dragana K.
AU  - Todorović, Dragan M.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11210
AB  - The model of a photoacoustic gas-microphone signal in the time domain recorded in a transmission configuration using a minimum volume cell is derived. This model takes into account the inertial thermal relaxations of both the sample and the gas filling the cell by means of the generalized hyperbolic theory of heat conduction. With the introduction of electro-thermal analogy for the thin sample and short microphone length cavity, characteristic quantities are defined, which can be used in solving the inverse problem in time-domain photoacoustic in both cases, when thermal relaxations are neglected as well as when they are considered. The derived model that includes thermal relaxation explains the experimentally observed occurrence of overshoots and undershoots as well as an oscillatory approach to the steady values of the recorded signal in high-resolution time-domain photoacoustic measurements of thin semiconductor membranes, which will be presented in detail in Paper II of the paper. © 2023 Author(s).
T2  - Journal of Applied Physics
T1  - Time-domain minimum-volume cell photoacoustic of thin semiconductor layer. I. Theory
VL  - 133
IS  - 24
SP  - 245701
DO  - 10.1063/5.0152519
ER  - 

@article{
author = "Galović, Slobodanka and Đorđević, Katarina Lj. and Nešić, Mioljub V. and Popović, Marica N. and Markushev, Dragan D. and Markushev, Dragana K. and Todorović, Dragan M.",
year = "2023",
abstract = "The model of a photoacoustic gas-microphone signal in the time domain recorded in a transmission configuration using a minimum volume cell is derived. This model takes into account the inertial thermal relaxations of both the sample and the gas filling the cell by means of the generalized hyperbolic theory of heat conduction. With the introduction of electro-thermal analogy for the thin sample and short microphone length cavity, characteristic quantities are defined, which can be used in solving the inverse problem in time-domain photoacoustic in both cases, when thermal relaxations are neglected as well as when they are considered. The derived model that includes thermal relaxation explains the experimentally observed occurrence of overshoots and undershoots as well as an oscillatory approach to the steady values of the recorded signal in high-resolution time-domain photoacoustic measurements of thin semiconductor membranes, which will be presented in detail in Paper II of the paper. © 2023 Author(s).",
journal = "Journal of Applied Physics",
title = "Time-domain minimum-volume cell photoacoustic of thin semiconductor layer. I. Theory",
volume = "133",
number = "24",
pages = "245701",
doi = "10.1063/5.0152519"
}

Galović, S., Đorđević, K. Lj., Nešić, M. V., Popović, M. N., Markushev, D. D., Markushev, D. K.,& Todorović, D. M.. (2023). Time-domain minimum-volume cell photoacoustic of thin semiconductor layer. I. Theory. in Journal of Applied Physics, 133(24), 245701.
https://doi.org/10.1063/5.0152519

Galović S, Đorđević KL, Nešić MV, Popović MN, Markushev DD, Markushev DK, Todorović DM. Time-domain minimum-volume cell photoacoustic of thin semiconductor layer. I. Theory. in Journal of Applied Physics. 2023;133(24):245701.
doi:10.1063/5.0152519 .

Galović, Slobodanka, Đorđević, Katarina Lj., Nešić, Mioljub V., Popović, Marica N., Markushev, Dragan D., Markushev, Dragana K., Todorović, Dragan M., "Time-domain minimum-volume cell photoacoustic of thin semiconductor layer. I. Theory" in Journal of Applied Physics, 133, no. 24 (2023):245701,
https://doi.org/10.1063/5.0152519 . .

TY  - JOUR
AU  - Markushev, Dragana K.
AU  - Markushev, Dragan D.
AU  - Aleksić, Sanja M.
AU  - Pantić, Dragan S.
AU  - Galović, Slobodanka
AU  - Todorović, Dragan M.
AU  - Ordonez-Miranda, Jose
PY  - 2020
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9663
AB  - Based on the experimental and theoretical signals of an open photoacoustic cell operating with modulation frequencies from 20 Hz to
20 kHz, a significant contribution of photogenerated excess carriers on the thermal and thermoelastic responses of an n-type silicon plate is
observed for the very first time. This is achieved by comparing the measured amplitude and phase of the photoacoustic signal with their
corresponding theoretical thermoelastic counterparts, for high enough modulation frequencies mainly. It is shown that the amplitude of the
thermoelastic component of plasma-thin samples varies about two orders of magnitude with respect to the corresponding one of
plasma-thick samples. Furthermore, we find a maximal temperature difference ΔT =− 35 nK between the illuminated and non-illuminated
sample surfaces, which shows that thin silicon plates with excess carriers could be used as heat sinks.
T2  - Journal of Applied Physics
T1  - Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon
VL  - 128
IS  - 9
SP  - 095103
DO  - 10.1063/5.0015657
ER  - 

@article{
author = "Markushev, Dragana K. and Markushev, Dragan D. and Aleksić, Sanja M. and Pantić, Dragan S. and Galović, Slobodanka and Todorović, Dragan M. and Ordonez-Miranda, Jose",
year = "2020",
abstract = "Based on the experimental and theoretical signals of an open photoacoustic cell operating with modulation frequencies from 20 Hz to
20 kHz, a significant contribution of photogenerated excess carriers on the thermal and thermoelastic responses of an n-type silicon plate is
observed for the very first time. This is achieved by comparing the measured amplitude and phase of the photoacoustic signal with their
corresponding theoretical thermoelastic counterparts, for high enough modulation frequencies mainly. It is shown that the amplitude of the
thermoelastic component of plasma-thin samples varies about two orders of magnitude with respect to the corresponding one of
plasma-thick samples. Furthermore, we find a maximal temperature difference ΔT =− 35 nK between the illuminated and non-illuminated
sample surfaces, which shows that thin silicon plates with excess carriers could be used as heat sinks.",
journal = "Journal of Applied Physics",
title = "Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon",
volume = "128",
number = "9",
pages = "095103",
doi = "10.1063/5.0015657"
}

Markushev, D. K., Markushev, D. D., Aleksić, S. M., Pantić, D. S., Galović, S., Todorović, D. M.,& Ordonez-Miranda, J.. (2020). Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon. in Journal of Applied Physics, 128(9), 095103.
https://doi.org/10.1063/5.0015657

Markushev DK, Markushev DD, Aleksić SM, Pantić DS, Galović S, Todorović DM, Ordonez-Miranda J. Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon. in Journal of Applied Physics. 2020;128(9):095103.
doi:10.1063/5.0015657 .

Markushev, Dragana K., Markushev, Dragan D., Aleksić, Sanja M., Pantić, Dragan S., Galović, Slobodanka, Todorović, Dragan M., Ordonez-Miranda, Jose, "Experimental photoacoustic observation of the photogenerated excess carrier influence on the thermoelastic response of n-type silicon" in Journal of Applied Physics, 128, no. 9 (2020):095103,
https://doi.org/10.1063/5.0015657 . .

TY  - JOUR
AU  - Dramićanin, Miroslav
AU  - Ristovski, Zoran
AU  - Nikolić, Pantelija
AU  - Vasiljević, Dana
AU  - Todorović, Dragan M.
PY  - 1995
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7480
AB  - Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.
T2  - Physical Review B
T1  - Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal
SP  - 14226
EP  - 14232
DO  - 10.1103/PhysRevB.51.14226
ER  - 

@article{
author = "Dramićanin, Miroslav and Ristovski, Zoran and Nikolić, Pantelija and Vasiljević, Dana and Todorović, Dragan M.",
year = "1995",
abstract = "Photoacoustic (PA) heat-transmission measurements were used to study transport in a nearly intrinsic Ge single crystal. A theoretical model was developed which quantitatively describes excess carrier and thermal-wave space distributions, within the semiconductor under monochromatic cw modulated excitation. The PA heat-transmission, reflection, and photothermal-beam-deflection signals can be calculated using this model. It is shown that the frequency characteristic of the measurement system can be eliminated using measurements on different thicknesses of the same sample. It is also shown that both the normalized phase and amplitude spectra, as a function of the modulation frequency, can be used to determine the values of the thermal diffusivity, the excess-carrier lifetime, and the surface recombination velocity.",
journal = "Physical Review B",
title = "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal",
pages = "14226-14232",
doi = "10.1103/PhysRevB.51.14226"
}

Dramićanin, M., Ristovski, Z., Nikolić, P., Vasiljević, D.,& Todorović, D. M.. (1995). Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B, 14226-14232.
https://doi.org/10.1103/PhysRevB.51.14226

Dramićanin M, Ristovski Z, Nikolić P, Vasiljević D, Todorović DM. Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal. in Physical Review B. 1995;:14226-14232.
doi:10.1103/PhysRevB.51.14226 .

Dramićanin, Miroslav, Ristovski, Zoran, Nikolić, Pantelija, Vasiljević, Dana, Todorović, Dragan M., "Photoacoustic investigation of transport in semiconductors: Theoretical and experimental study of a Ge single crystal" in Physical Review B (1995):14226-14232,
https://doi.org/10.1103/PhysRevB.51.14226 . .