TY  - JOUR
AU  - Balog, Richard
AU  - Andersen, Mie
AU  - Jorgensen, Bjarke
AU  - Šljivančanin, Željko
AU  - Hammer, Bjork
AU  - Baraldi, Alessandro
AU  - Larciprete, Rosanna
AU  - Hofmann, Philip
AU  - Hornekaer, Liv
AU  - Lizzit, Silvano
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5531
AB  - Combined fast X-ray photoelectron spectroscopy and density functional theory calculations reveal the presence of two types of hydrogen adsorbate structures at the graphene/Ir(111) interface, namely, graphane-like islands and hydrogen dimer structures. While the former give rise to a periodic pattern, dimers tend to destroy the periodicity. Our data reveal distinctive growth rates and stability of both types of structures, thereby allowing one to obtain well-defined patterns of hydrogen clusters. The ability to control and manipulate the formation and size of hydrogen structures on graphene facilitates tailoring of its properties for a wide range of applications by means of covalent functionalization.
T2  - ACS Nano
T1  - Controlling Hydrogenation of Graphene on Ir(111)
VL  - 7
IS  - 5
SP  - 3823
EP  - 3832
DO  - 10.1021/nn400780x
ER  - 

@article{
author = "Balog, Richard and Andersen, Mie and Jorgensen, Bjarke and Šljivančanin, Željko and Hammer, Bjork and Baraldi, Alessandro and Larciprete, Rosanna and Hofmann, Philip and Hornekaer, Liv and Lizzit, Silvano",
year = "2013",
abstract = "Combined fast X-ray photoelectron spectroscopy and density functional theory calculations reveal the presence of two types of hydrogen adsorbate structures at the graphene/Ir(111) interface, namely, graphane-like islands and hydrogen dimer structures. While the former give rise to a periodic pattern, dimers tend to destroy the periodicity. Our data reveal distinctive growth rates and stability of both types of structures, thereby allowing one to obtain well-defined patterns of hydrogen clusters. The ability to control and manipulate the formation and size of hydrogen structures on graphene facilitates tailoring of its properties for a wide range of applications by means of covalent functionalization.",
journal = "ACS Nano",
title = "Controlling Hydrogenation of Graphene on Ir(111)",
volume = "7",
number = "5",
pages = "3823-3832",
doi = "10.1021/nn400780x"
}

Balog, R., Andersen, M., Jorgensen, B., Šljivančanin, Ž., Hammer, B., Baraldi, A., Larciprete, R., Hofmann, P., Hornekaer, L.,& Lizzit, S.. (2013). Controlling Hydrogenation of Graphene on Ir(111). in ACS Nano, 7(5), 3823-3832.
https://doi.org/10.1021/nn400780x

Balog R, Andersen M, Jorgensen B, Šljivančanin Ž, Hammer B, Baraldi A, Larciprete R, Hofmann P, Hornekaer L, Lizzit S. Controlling Hydrogenation of Graphene on Ir(111). in ACS Nano. 2013;7(5):3823-3832.
doi:10.1021/nn400780x .

Balog, Richard, Andersen, Mie, Jorgensen, Bjarke, Šljivančanin, Željko, Hammer, Bjork, Baraldi, Alessandro, Larciprete, Rosanna, Hofmann, Philip, Hornekaer, Liv, Lizzit, Silvano, "Controlling Hydrogenation of Graphene on Ir(111)" in ACS Nano, 7, no. 5 (2013):3823-3832,
https://doi.org/10.1021/nn400780x . .

TY  - JOUR
AU  - Balog, Richard
AU  - Jorgensen, Bjarke
AU  - Nilsson, Louis
AU  - Andersen, Mie
AU  - Rienks, Emile
AU  - Bianchi, Marco
AU  - Fanetti, Mattia
AU  - Laegsgaard, Erik
AU  - Baraldi, Alessandro
AU  - Lizzit, Silvano
AU  - Šljivančanin, Željko
AU  - Besenbacher, Flemming
AU  - Hammer, Bjork
AU  - Pedersen, Thomas G.
AU  - Hofmann, Philip
AU  - Hornekaer, Liv
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3937
AB  - Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices(1). The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication(2,3). However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice(4-6), but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene grown on an Ir(111) substrate.
T2  - Nature Materials
T1  - Bandgap opening in graphene induced by patterned hydrogen adsorption
VL  - 9
IS  - 4
SP  - 315
EP  - 319
DO  - 10.1038/NMAT2710
ER  - 

@article{
author = "Balog, Richard and Jorgensen, Bjarke and Nilsson, Louis and Andersen, Mie and Rienks, Emile and Bianchi, Marco and Fanetti, Mattia and Laegsgaard, Erik and Baraldi, Alessandro and Lizzit, Silvano and Šljivančanin, Željko and Besenbacher, Flemming and Hammer, Bjork and Pedersen, Thomas G. and Hofmann, Philip and Hornekaer, Liv",
year = "2010",
abstract = "Graphene, a single layer of graphite, has recently attracted considerable attention owing to its remarkable electronic and structural properties and its possible applications in many emerging areas such as graphene-based electronic devices(1). The charge carriers in graphene behave like massless Dirac fermions, and graphene shows ballistic charge transport, turning it into an ideal material for circuit fabrication(2,3). However, graphene lacks a bandgap around the Fermi level, which is the defining concept for semiconductor materials and essential for controlling the conductivity by electronic means. Theory predicts that a tunable bandgap may be engineered by periodic modulations of the graphene lattice(4-6), but experimental evidence for this is so far lacking. Here, we demonstrate the existence of a bandgap opening in graphene, induced by the patterned adsorption of atomic hydrogen onto the Moire superlattice positions of graphene grown on an Ir(111) substrate.",
journal = "Nature Materials",
title = "Bandgap opening in graphene induced by patterned hydrogen adsorption",
volume = "9",
number = "4",
pages = "315-319",
doi = "10.1038/NMAT2710"
}

Balog, R., Jorgensen, B., Nilsson, L., Andersen, M., Rienks, E., Bianchi, M., Fanetti, M., Laegsgaard, E., Baraldi, A., Lizzit, S., Šljivančanin, Ž., Besenbacher, F., Hammer, B., Pedersen, T. G., Hofmann, P.,& Hornekaer, L.. (2010). Bandgap opening in graphene induced by patterned hydrogen adsorption. in Nature Materials, 9(4), 315-319.
https://doi.org/10.1038/NMAT2710

Balog R, Jorgensen B, Nilsson L, Andersen M, Rienks E, Bianchi M, Fanetti M, Laegsgaard E, Baraldi A, Lizzit S, Šljivančanin Ž, Besenbacher F, Hammer B, Pedersen TG, Hofmann P, Hornekaer L. Bandgap opening in graphene induced by patterned hydrogen adsorption. in Nature Materials. 2010;9(4):315-319.
doi:10.1038/NMAT2710 .

Balog, Richard, Jorgensen, Bjarke, Nilsson, Louis, Andersen, Mie, Rienks, Emile, Bianchi, Marco, Fanetti, Mattia, Laegsgaard, Erik, Baraldi, Alessandro, Lizzit, Silvano, Šljivančanin, Željko, Besenbacher, Flemming, Hammer, Bjork, Pedersen, Thomas G., Hofmann, Philip, Hornekaer, Liv, "Bandgap opening in graphene induced by patterned hydrogen adsorption" in Nature Materials, 9, no. 4 (2010):315-319,
https://doi.org/10.1038/NMAT2710 . .