TY  - CONF
AU  - Erich, Marko
AU  - Gloginjić, Marko
AU  - Mravik, Željko
AU  - Vrban, Branislav
AU  - Čerba, Štefan
AU  - Lüley, Jakub
AU  - Nečas, Vladimír
AU  - Filová, Vendula
AU  - Katovský, Karel
AU  - Štastný, Ondrej
AU  - Petrović, Srđan M.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11068
AB  - 6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.
C3  - 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic
T1  - Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence
VL  - 2778
IS  - 1
SP  - 060002
DO  - 10.1063/5.0136670
ER  - 

@conference{
author = "Erich, Marko and Gloginjić, Marko and Mravik, Željko and Vrban, Branislav and Čerba, Štefan and Lüley, Jakub and Nečas, Vladimír and Filová, Vendula and Katovský, Karel and Štastný, Ondrej and Petrović, Srđan M.",
year = "2023",
abstract = "6H-SiC samples have been implanted by 4 MeV C and Si ions in the (0001) channeling direction to the sets of multiple implantation fluences. These samples were analyzed via Elastic Backscattering Spectroscopy in the channeling mode (EBS/C) using 1.725 MeV proton beam, from which SiC amorphization depth profiles and averaged integral 6H-SiC amorphization have been obtained. The averaged integral 6H-SiC crystal amorphization vs implanted fluence dependence has been determined for both types of implanted ions. From these dependences, the 6H-SiC integral crystal amorphization vs. implanted fluence/type of implanted atom assessment model have been proposed.",
journal = "27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic",
title = "Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence",
volume = "2778",
number = "1",
pages = "060002",
doi = "10.1063/5.0136670"
}

Erich, M., Gloginjić, M., Mravik, Ž., Vrban, B., Čerba, Š., Lüley, J., Nečas, V., Filová, V., Katovský, K., Štastný, O.,& Petrović, S. M.. (2023). Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778(1), 060002.
https://doi.org/10.1063/5.0136670

Erich M, Gloginjić M, Mravik Ž, Vrban B, Čerba Š, Lüley J, Nečas V, Filová V, Katovský K, Štastný O, Petrović SM. Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence. in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic. 2023;2778(1):060002.
doi:10.1063/5.0136670 .

Erich, Marko, Gloginjić, Marko, Mravik, Željko, Vrban, Branislav, Čerba, Štefan, Lüley, Jakub, Nečas, Vladimír, Filová, Vendula, Katovský, Karel, Štastný, Ondrej, Petrović, Srđan M., "Dependence of the 6H - SiC induced amorphization on the ion beam implanted fluence" in 27th International Conference on Applied Physics of Condensed Matter : APCOM 2022 : the book of abstracts; June 22 - 24; Strbske Pleso, Slovak Republic, 2778, no. 1 (2023):060002,
https://doi.org/10.1063/5.0136670 . .