TY  - JOUR
AU  - Amati, Matteo
AU  - Gregoratti, Luca
AU  - Sezen, Hikmet
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Homewood, Kevin P.
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1578
AB  - This paper reports on compositional and structural modifications induced in coated AlN/TiN multilayers by argon ion irradiation. The initial structure consisting of totally 30 alternate AlN (8 nm thick) and TiN (9.3 nm thick) layers was deposited on Si (100) wafers, by reactive sputtering. Irradiation was done with 180 keV Ar+ to a high dose of 8 x 10(16) ions/cm(2), which introduces up to similar to 10 at.% of argon species, and generates a maximum displacement per atom of 92 for AlN and 127 for TiN, around the projected ion range (109 +/- 34 nm). Characterizations were performed by Rutherford backscattering spectrometry, spatially resolved x-ray photoelectron spectroscopy, and transmission electron microscopy. The obtained results reveal that this highly immiscible and thermally stable system suffered a severe modification upon the applied ion irradiation, although it was performed at room temperature. They illustrate a thorough inter-layer mixing, atomic redistribution, structural change and phase transformation within the affected depth. The original TiN layers appear to grow in thickness, consuming the adjacent AlN layers, while retaining the fcc crystalline structure. In the mostly affected region, the interaction proceeds until all of the original AlN layers are consumed. Compositional studies with photoemission spectroscopy show that due to the ion irradiation treatment the TiN and AlN layers are transformed into Ti0.75Al0.25N and Ti0.65Al0.35N ternary compounds characterized by a better homogenized chemical form compared to non-irradiated layers. The results can be interesting towards further development of radiation tolerant materials based on immiscible ceramic nanocomposites. (C) 2017 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Compositional and structural studies of ion-beam modified AlN/TiN multilayers
VL  - 411
SP  - 431
EP  - 436
DO  - 10.1016/j.apsusc.2017.03.160
ER  - 

@article{
author = "Amati, Matteo and Gregoratti, Luca and Sezen, Hikmet and Grce, Ana and Milosavljević, Momir and Homewood, Kevin P.",
year = "2017",
abstract = "This paper reports on compositional and structural modifications induced in coated AlN/TiN multilayers by argon ion irradiation. The initial structure consisting of totally 30 alternate AlN (8 nm thick) and TiN (9.3 nm thick) layers was deposited on Si (100) wafers, by reactive sputtering. Irradiation was done with 180 keV Ar+ to a high dose of 8 x 10(16) ions/cm(2), which introduces up to similar to 10 at.% of argon species, and generates a maximum displacement per atom of 92 for AlN and 127 for TiN, around the projected ion range (109 +/- 34 nm). Characterizations were performed by Rutherford backscattering spectrometry, spatially resolved x-ray photoelectron spectroscopy, and transmission electron microscopy. The obtained results reveal that this highly immiscible and thermally stable system suffered a severe modification upon the applied ion irradiation, although it was performed at room temperature. They illustrate a thorough inter-layer mixing, atomic redistribution, structural change and phase transformation within the affected depth. The original TiN layers appear to grow in thickness, consuming the adjacent AlN layers, while retaining the fcc crystalline structure. In the mostly affected region, the interaction proceeds until all of the original AlN layers are consumed. Compositional studies with photoemission spectroscopy show that due to the ion irradiation treatment the TiN and AlN layers are transformed into Ti0.75Al0.25N and Ti0.65Al0.35N ternary compounds characterized by a better homogenized chemical form compared to non-irradiated layers. The results can be interesting towards further development of radiation tolerant materials based on immiscible ceramic nanocomposites. (C) 2017 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Compositional and structural studies of ion-beam modified AlN/TiN multilayers",
volume = "411",
pages = "431-436",
doi = "10.1016/j.apsusc.2017.03.160"
}

Amati, M., Gregoratti, L., Sezen, H., Grce, A., Milosavljević, M.,& Homewood, K. P.. (2017). Compositional and structural studies of ion-beam modified AlN/TiN multilayers. in Applied Surface Science, 411, 431-436.
https://doi.org/10.1016/j.apsusc.2017.03.160

Amati M, Gregoratti L, Sezen H, Grce A, Milosavljević M, Homewood KP. Compositional and structural studies of ion-beam modified AlN/TiN multilayers. in Applied Surface Science. 2017;411:431-436.
doi:10.1016/j.apsusc.2017.03.160 .

Amati, Matteo, Gregoratti, Luca, Sezen, Hikmet, Grce, Ana, Milosavljević, Momir, Homewood, Kevin P., "Compositional and structural studies of ion-beam modified AlN/TiN multilayers" in Applied Surface Science, 411 (2017):431-436,
https://doi.org/10.1016/j.apsusc.2017.03.160 . .

TY  - JOUR
AU  - Obradović, Marko O.
AU  - Pjević, Dejan J.
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Homewood, Kevin P.
AU  - Siketic, Z.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7078
AB  - The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system
VL  - 591
SP  - 164
EP  - 168
DO  - 10.1016/j.tsf.2015.03.074
ER  - 

@article{
author = "Obradović, Marko O. and Pjević, Dejan J. and Peruško, Davor and Grce, Ana and Milosavljević, Momir and Homewood, Kevin P. and Siketic, Z.",
year = "2015",
abstract = "The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system",
volume = "591",
pages = "164-168",
doi = "10.1016/j.tsf.2015.03.074"
}

Obradović, M. O., Pjević, D. J., Peruško, D., Grce, A., Milosavljević, M., Homewood, K. P.,& Siketic, Z.. (2015). Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films, 591, 164-168.
https://doi.org/10.1016/j.tsf.2015.03.074

Obradović MO, Pjević DJ, Peruško D, Grce A, Milosavljević M, Homewood KP, Siketic Z. Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films. 2015;591:164-168.
doi:10.1016/j.tsf.2015.03.074 .

Obradović, Marko O., Pjević, Dejan J., Peruško, Davor, Grce, Ana, Milosavljević, Momir, Homewood, Kevin P., Siketic, Z., "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system" in Thin Solid Films, 591 (2015):164-168,
https://doi.org/10.1016/j.tsf.2015.03.074 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Toprek, Dragan
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Dražić, Goran
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5335
AB  - The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers
VL  - 268
SP  - 516
EP  - 523
DO  - 10.1016/j.apsusc.2012.12.158
ER  - 

@article{
author = "Milosavljević, Momir and Toprek, Dragan and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Dražić, Goran and Kovač, Janez and Homewood, Kevin P.",
year = "2013",
abstract = "The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers",
volume = "268",
pages = "516-523",
doi = "10.1016/j.apsusc.2012.12.158"
}

Milosavljević, M., Toprek, D., Obradović, M. O., Grce, A., Peruško, D., Dražić, G., Kovač, J.,& Homewood, K. P.. (2013). Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science, 268, 516-523.
https://doi.org/10.1016/j.apsusc.2012.12.158

Milosavljević M, Toprek D, Obradović MO, Grce A, Peruško D, Dražić G, Kovač J, Homewood KP. Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science. 2013;268:516-523.
doi:10.1016/j.apsusc.2012.12.158 .

Milosavljević, Momir, Toprek, Dragan, Obradović, Marko O., Grce, Ana, Peruško, Davor, Dražić, Goran, Kovač, Janez, Homewood, Kevin P., "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers" in Applied Surface Science, 268 (2013):516-523,
https://doi.org/10.1016/j.apsusc.2012.12.158 . .

TY  - JOUR
AU  - Petrović, Suzana
AU  - Peruško, Davor
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Gaković, Biljana M.
AU  - Homewood, Kevin P.
AU  - Milosavljević, Momir
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4839
AB  - Ion implantation and thermal annealing effects on composition and structure of Ni/Ti multilayer have been studied and reported in this paper. The thin films composed of five (Ni/Ti) bilayers were deposited by d.c. ion sputtering on (100) Si wafers to a total thickness of similar to 180 nm. Ion irradiations were performed by 180 keV Ar+ ions with fluence of 6 x 10(16) ions cm(-2). After deposition and implantation, the samples were annealed at 400 degrees C for 30 min in an inert ambient. Composition and structural characterizations were performed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Annealing of as-deposited samples at 400 degrees C induces a progressed interaction between Ni and Ti layers with the initial formation of NiTi alloy phase. Progressed alloying was achieved for the ion fluence of 6 x 10(16) ions cm(-2) and the formed structure is composed of NiTi compound, only at depth around the projected ion range. In the deeper layers, beyond the projected range of implanted ions, the diffusion of Ni atoms can lead to solid state amorphization. Subsequent annealing at 400 degrees C for 30 min enabled enhanced interaction between intermixed Ni and Ti layers, and in the layers close to the Si substrate the conditions for the formation of intermetallic compound are created. (c) 2012 Elsevier Ltd. All rights reserved.
T2  - Intermetallics
T1  - Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing
VL  - 25
SP  - 27
EP  - 33
DO  - 10.1016/j.intermet.2012.02.007
ER  - 

@article{
author = "Petrović, Suzana and Peruško, Davor and Mitrić, Miodrag and Kovač, Janez and Dražić, Goran and Gaković, Biljana M. and Homewood, Kevin P. and Milosavljević, Momir",
year = "2012",
abstract = "Ion implantation and thermal annealing effects on composition and structure of Ni/Ti multilayer have been studied and reported in this paper. The thin films composed of five (Ni/Ti) bilayers were deposited by d.c. ion sputtering on (100) Si wafers to a total thickness of similar to 180 nm. Ion irradiations were performed by 180 keV Ar+ ions with fluence of 6 x 10(16) ions cm(-2). After deposition and implantation, the samples were annealed at 400 degrees C for 30 min in an inert ambient. Composition and structural characterizations were performed by X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and transmission electron microscopy (TEM). Annealing of as-deposited samples at 400 degrees C induces a progressed interaction between Ni and Ti layers with the initial formation of NiTi alloy phase. Progressed alloying was achieved for the ion fluence of 6 x 10(16) ions cm(-2) and the formed structure is composed of NiTi compound, only at depth around the projected ion range. In the deeper layers, beyond the projected range of implanted ions, the diffusion of Ni atoms can lead to solid state amorphization. Subsequent annealing at 400 degrees C for 30 min enabled enhanced interaction between intermixed Ni and Ti layers, and in the layers close to the Si substrate the conditions for the formation of intermetallic compound are created. (c) 2012 Elsevier Ltd. All rights reserved.",
journal = "Intermetallics",
title = "Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing",
volume = "25",
pages = "27-33",
doi = "10.1016/j.intermet.2012.02.007"
}

Petrović, S., Peruško, D., Mitrić, M., Kovač, J., Dražić, G., Gaković, B. M., Homewood, K. P.,& Milosavljević, M.. (2012). Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing. in Intermetallics, 25, 27-33.
https://doi.org/10.1016/j.intermet.2012.02.007

Petrović S, Peruško D, Mitrić M, Kovač J, Dražić G, Gaković BM, Homewood KP, Milosavljević M. Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing. in Intermetallics. 2012;25:27-33.
doi:10.1016/j.intermet.2012.02.007 .

Petrović, Suzana, Peruško, Davor, Mitrić, Miodrag, Kovač, Janez, Dražić, Goran, Gaković, Biljana M., Homewood, Kevin P., Milosavljević, Momir, "Formation of intermetallic phase in Ni/Ti multilayer structure by ion implantation and thermal annealing" in Intermetallics, 25 (2012):27-33,
https://doi.org/10.1016/j.intermet.2012.02.007 . .

TY  - JOUR
AU  - Berhanuddin, D. D.
AU  - Lourenco, M. A.
AU  - Jeynes, C.
AU  - Milosavljević, Momir
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5185
AB  - We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]
T2  - Journal of Applied Physics
T1  - Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre
VL  - 112
IS  - 10
DO  - 10.1063/1.4766390
ER  - 

@article{
author = "Berhanuddin, D. D. and Lourenco, M. A. and Jeynes, C. and Milosavljević, Momir and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2012",
abstract = "We investigate a new approach for efficient generation of the lasing G-centre (carbon substitutional-silicon self-interstitial complex) which crucially is fully compatible with standard silicon ultra-large-scale integration technology. Silicon wafers were implanted with carbon and irradiated with high energy protons to produce self-interstitials that are crucial in the formation of the G-centre. Rutherford backscattering spectrometry (RBS) and transmission electron microscopy were used to study the structure of the post-implanted silicon samples and to investigate the behaviour of the self-interstitials and damage introduced by the carbon and proton implantation. The effect of substrate pre-amorphisation on the G-centre luminescence intensity and formation properties was also investigated by implanting Ge prior to the carbon and proton irradiation. Photoluminescence measurements and RBS results show a significantly higher G-centre peak intensity and silicon yield, respectively, in samples without pre-amorphisation. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4766390]",
journal = "Journal of Applied Physics",
title = "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre",
volume = "112",
number = "10",
doi = "10.1063/1.4766390"
}

Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, M., Gwilliam, R. M.,& Homewood, K. P.. (2012). Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics, 112(10).
https://doi.org/10.1063/1.4766390

Berhanuddin DD, Lourenco MA, Jeynes C, Milosavljević M, Gwilliam RM, Homewood KP. Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre. in Journal of Applied Physics. 2012;112(10).
doi:10.1063/1.4766390 .

Berhanuddin, D. D., Lourenco, M. A., Jeynes, C., Milosavljević, Momir, Gwilliam, R. M., Homewood, Kevin P., "Structural analysis of silicon co-implanted with carbon and high energy proton for the formation of the lasing G-centre" in Journal of Applied Physics, 112, no. 10 (2012),
https://doi.org/10.1063/1.4766390 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Stojanović, Mirjana
AU  - Pjević, Dejan J.
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4487
AB  - The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation
VL  - 269
IS  - 19
SP  - 2090
EP  - 2097
DO  - 10.1016/j.nimb.2011.06.017
ER  - 

@article{
author = "Milosavljević, Momir and Milinović, Velimir and Peruško, Davor and Grce, Ana and Stojanović, Mirjana and Pjević, Dejan J. and Mitrić, Miodrag and Kovač, Janez and Homewood, Kevin P.",
year = "2011",
abstract = "The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation",
volume = "269",
number = "19",
pages = "2090-2097",
doi = "10.1016/j.nimb.2011.06.017"
}

Milosavljević, M., Milinović, V., Peruško, D., Grce, A., Stojanović, M., Pjević, D. J., Mitrić, M., Kovač, J.,& Homewood, K. P.. (2011). Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(19), 2090-2097.
https://doi.org/10.1016/j.nimb.2011.06.017

Milosavljević M, Milinović V, Peruško D, Grce A, Stojanović M, Pjević DJ, Mitrić M, Kovač J, Homewood KP. Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(19):2090-2097.
doi:10.1016/j.nimb.2011.06.017 .

Milosavljević, Momir, Milinović, Velimir, Peruško, Davor, Grce, Ana, Stojanović, Mirjana, Pjević, Dejan J., Mitrić, Miodrag, Kovač, Janez, Homewood, Kevin P., "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 19 (2011):2090-2097,
https://doi.org/10.1016/j.nimb.2011.06.017 . .

TY  - JOUR
AU  - Fedotova, J. A.
AU  - Przewoznik, J.
AU  - Kapusta, Cz
AU  - Milosavljević, Momir
AU  - Kasiuk, J. V.
AU  - Zukrowski, J.
AU  - Sikora, M.
AU  - Maximenko, A. A.
AU  - Szepietowska, D.
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4609
AB  - Temperature and magnetic field dependences of electrical conductivity are systematically studied in granular films (Fe45Co45Zr10)(x)(Al2O3)(100-x) (28 LT = x LT = 64) containing crystalline metallic alpha-FeCo-based nanoalloy cores encapsulated in an amorphous oxide shell embedded in an amorphous Al2O3 matrix. Formation of metallic core-oxide shell nanogranules is confirmed by transmission electron microscopy (TEM) and HRTEM. The structure of core and shell is governed with the difference in the oxidation states of Fe and Co ions investigated with EXAFS, XANES and Mossbauer spectroscopy. A considerable negative magnetoresistance (MR) effect of spin-dependent nature is observed in the whole range of x values. Its increase with decreasing temperature is correlated with the magnetic saturation of superparamagnetic metallic nanogranules. The enhanced MR effect in core-shell granular films is related to the percolation of oxide shells and their influence through spin filtering processes. A considerable high field MR at low temperatures and the resulting deviation of MR and squared magnetization are attributed to a magnetic randomness and/or strong magnetic anisotropy of the magnetic oxide shell.
T2  - Journal of Physics. D: Applied Physics
T1  - Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules
VL  - 44
IS  - 49
DO  - 10.1088/0022-3727/44/49/495001
ER  - 

@article{
author = "Fedotova, J. A. and Przewoznik, J. and Kapusta, Cz and Milosavljević, Momir and Kasiuk, J. V. and Zukrowski, J. and Sikora, M. and Maximenko, A. A. and Szepietowska, D. and Homewood, Kevin P.",
year = "2011",
abstract = "Temperature and magnetic field dependences of electrical conductivity are systematically studied in granular films (Fe45Co45Zr10)(x)(Al2O3)(100-x) (28 LT = x LT = 64) containing crystalline metallic alpha-FeCo-based nanoalloy cores encapsulated in an amorphous oxide shell embedded in an amorphous Al2O3 matrix. Formation of metallic core-oxide shell nanogranules is confirmed by transmission electron microscopy (TEM) and HRTEM. The structure of core and shell is governed with the difference in the oxidation states of Fe and Co ions investigated with EXAFS, XANES and Mossbauer spectroscopy. A considerable negative magnetoresistance (MR) effect of spin-dependent nature is observed in the whole range of x values. Its increase with decreasing temperature is correlated with the magnetic saturation of superparamagnetic metallic nanogranules. The enhanced MR effect in core-shell granular films is related to the percolation of oxide shells and their influence through spin filtering processes. A considerable high field MR at low temperatures and the resulting deviation of MR and squared magnetization are attributed to a magnetic randomness and/or strong magnetic anisotropy of the magnetic oxide shell.",
journal = "Journal of Physics. D: Applied Physics",
title = "Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules",
volume = "44",
number = "49",
doi = "10.1088/0022-3727/44/49/495001"
}

Fedotova, J. A., Przewoznik, J., Kapusta, C., Milosavljević, M., Kasiuk, J. V., Zukrowski, J., Sikora, M., Maximenko, A. A., Szepietowska, D.,& Homewood, K. P.. (2011). Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules. in Journal of Physics. D: Applied Physics, 44(49).
https://doi.org/10.1088/0022-3727/44/49/495001

Fedotova JA, Przewoznik J, Kapusta C, Milosavljević M, Kasiuk JV, Zukrowski J, Sikora M, Maximenko AA, Szepietowska D, Homewood KP. Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules. in Journal of Physics. D: Applied Physics. 2011;44(49).
doi:10.1088/0022-3727/44/49/495001 .

Fedotova, J. A., Przewoznik, J., Kapusta, Cz, Milosavljević, Momir, Kasiuk, J. V., Zukrowski, J., Sikora, M., Maximenko, A. A., Szepietowska, D., Homewood, Kevin P., "Magnetoresistance in FeCoZr-Al2O3 nanocomposite films containing metal core-oxide shell nanogranules" in Journal of Physics. D: Applied Physics, 44, no. 49 (2011),
https://doi.org/10.1088/0022-3727/44/49/495001 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4454
AB  - Microstructural and electroluminescence measurements are carried out on boron implanted dislocation engineered silicon light emitting diodes (LEDs) co-implanted with the rare earth thulium to provide wavelength tuning in the infra-red. Silicon LEDs operating in the range from 1.1-1.35 mu m are fabricated by co-implantation of boron and thulium into n-type Si (100) wafers and subsequently rapid thermally annealed to activate the implants and to engineer the dislocation loop array that is crucial in allowing light emission. Ohmic contacts are applied to the p and n regions to form conventional p-n junction LEDs. Electroluminescence is obtained under normal forward biasing of the devices. The influence of implantation sequence (B or Tm first), ion dose, and the post-implantation annealing on the microstructure and electroluminescence from the devices is studied. A clear role of the heavy-ion Tm co-implant in significantly modifying the boron induced dislocation loop array distribution is demonstrated. We also identify the development of dislocation loops under thermal spikes upon heavy ion (Tm) implantation into Si. The results contribute to a better understanding of the basic processes involved in fabrication and functioning of co-implanted devices, toward achieving higher light emission efficiency. VC 2011 American Institute of Physics. [doi:10.1063/1.3614036]
T2  - Journal of Applied Physics
T1  - Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes
VL  - 110
IS  - 3
DO  - 10.1063/1.3614036
ER  - 

@article{
author = "Milosavljević, Momir and Lourenco, M. A. and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2011",
abstract = "Microstructural and electroluminescence measurements are carried out on boron implanted dislocation engineered silicon light emitting diodes (LEDs) co-implanted with the rare earth thulium to provide wavelength tuning in the infra-red. Silicon LEDs operating in the range from 1.1-1.35 mu m are fabricated by co-implantation of boron and thulium into n-type Si (100) wafers and subsequently rapid thermally annealed to activate the implants and to engineer the dislocation loop array that is crucial in allowing light emission. Ohmic contacts are applied to the p and n regions to form conventional p-n junction LEDs. Electroluminescence is obtained under normal forward biasing of the devices. The influence of implantation sequence (B or Tm first), ion dose, and the post-implantation annealing on the microstructure and electroluminescence from the devices is studied. A clear role of the heavy-ion Tm co-implant in significantly modifying the boron induced dislocation loop array distribution is demonstrated. We also identify the development of dislocation loops under thermal spikes upon heavy ion (Tm) implantation into Si. The results contribute to a better understanding of the basic processes involved in fabrication and functioning of co-implanted devices, toward achieving higher light emission efficiency. VC 2011 American Institute of Physics. [doi:10.1063/1.3614036]",
journal = "Journal of Applied Physics",
title = "Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes",
volume = "110",
number = "3",
doi = "10.1063/1.3614036"
}

Milosavljević, M., Lourenco, M. A., Gwilliam, R. M.,& Homewood, K. P.. (2011). Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes. in Journal of Applied Physics, 110(3).
https://doi.org/10.1063/1.3614036

Milosavljević M, Lourenco MA, Gwilliam RM, Homewood KP. Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes. in Journal of Applied Physics. 2011;110(3).
doi:10.1063/1.3614036 .

Milosavljević, Momir, Lourenco, M. A., Gwilliam, R. M., Homewood, Kevin P., "Role of heavy ion co-implantation and thermal spikes on the development of dislocation loops in nanoengineered silicon light emitting diodes" in Journal of Applied Physics, 110, no. 3 (2011),
https://doi.org/10.1063/1.3614036 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Wong, Lewis
AU  - Lourenco, Manon
AU  - Valizadeh, Reza
AU  - Colligon, John
AU  - Shao, Guosheng
AU  - Homewood, Kevin P.
PY  - 2010
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4097
AB  - Iron-disilicide films were sputter deposited on Si(100) wafers to 300-400 nm, at substrate temperatures ranging from room temperature to 700 degrees C As-deposited films were amorphous at deposition temperatures up to 200 degrees C, and crystalline beta-FeSi2 at 300-700 degrees C Amorphous films were heat-treated after deposition at 300-700 degrees C They remained amorphous up to 400 degrees C, and transformed to crystalline beta-FeSi2 at 500-700 degrees C Optical absorption measurements showed that the band gap of all films is direct in nature, ranging from 0 88 to 0 93 eV The deposition temperature was seen to affect the crystallinity of the as-deposited films and to vary their optical properties significantly The photoabsorption coefficient, measured at 1 eV, increased from 5 6 x 10(4) cm(-1) for amorphous films to 1.2 x 10(5) cm(-1) for the samples deposited at 700 degrees C The films crystallized by heat-treatment had a markedly different and irregular structure, resulting in their lower optical absorption (C) 2010 The Japan Society of Applied Physics
T2  - Japanese Journal of Applied Physics
T1  - Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films
VL  - 49
IS  - 8
DO  - 10.1143/JJAP.49.081401
ER  - 

@article{
author = "Milosavljević, Momir and Wong, Lewis and Lourenco, Manon and Valizadeh, Reza and Colligon, John and Shao, Guosheng and Homewood, Kevin P.",
year = "2010",
abstract = "Iron-disilicide films were sputter deposited on Si(100) wafers to 300-400 nm, at substrate temperatures ranging from room temperature to 700 degrees C As-deposited films were amorphous at deposition temperatures up to 200 degrees C, and crystalline beta-FeSi2 at 300-700 degrees C Amorphous films were heat-treated after deposition at 300-700 degrees C They remained amorphous up to 400 degrees C, and transformed to crystalline beta-FeSi2 at 500-700 degrees C Optical absorption measurements showed that the band gap of all films is direct in nature, ranging from 0 88 to 0 93 eV The deposition temperature was seen to affect the crystallinity of the as-deposited films and to vary their optical properties significantly The photoabsorption coefficient, measured at 1 eV, increased from 5 6 x 10(4) cm(-1) for amorphous films to 1.2 x 10(5) cm(-1) for the samples deposited at 700 degrees C The films crystallized by heat-treatment had a markedly different and irregular structure, resulting in their lower optical absorption (C) 2010 The Japan Society of Applied Physics",
journal = "Japanese Journal of Applied Physics",
title = "Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films",
volume = "49",
number = "8",
doi = "10.1143/JJAP.49.081401"
}

Milosavljević, M., Wong, L., Lourenco, M., Valizadeh, R., Colligon, J., Shao, G.,& Homewood, K. P.. (2010). Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films. in Japanese Journal of Applied Physics, 49(8).
https://doi.org/10.1143/JJAP.49.081401

Milosavljević M, Wong L, Lourenco M, Valizadeh R, Colligon J, Shao G, Homewood KP. Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films. in Japanese Journal of Applied Physics. 2010;49(8).
doi:10.1143/JJAP.49.081401 .

Milosavljević, Momir, Wong, Lewis, Lourenco, Manon, Valizadeh, Reza, Colligon, John, Shao, Guosheng, Homewood, Kevin P., "Correlation of Structural and Optical Properties of Sputtered FeSi2 Thin Films" in Japanese Journal of Applied Physics, 49, no. 8 (2010),
https://doi.org/10.1143/JJAP.49.081401 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Shao, G.
AU  - Gwilliam, R. M.
AU  - Homewood, Kevin P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6766
AB  - We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and post-implantation annealing on the formation of shallow dislocation loops in silicon, for fabrication of silicon light emitting diodes. The substrates used were (100) Si, implanted with 20-80 keV boron at room temperature and 75-175 keV silicon at 100 and 200 degrees C. The implanted fluences were from 5 x 10(14) to 1 x 10(15) ions/cm(2). After irradiation the samples were processed for 15 s to 20 min at 950 degrees C by rapid thermal annealing. Structural analysis of the samples was done by transmission electron microscopy and Rutherford backscattering spectrometry. In all irradiations the silicon substrates were not amorphized, and that resulted in the formation of extrinsic perfect and faulted dislocation loops with Burgers vectors a/2 LT 110 GT and a/3 LT 111 GT , respectively, sitting in {111} habit planes. It was demonstrated that by varying the ion implantation parameters and post-irradiation annealing, it is possible to form various shapes, concentration and distribution of dislocation loops in silicon. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes
VL  - 266
IS  - 10
SP  - 2470
EP  - 2474
DO  - 10.1016/j.nimb.2008.03.021
ER  - 

@article{
author = "Milosavljević, Momir and Lourenco, M. A. and Shao, G. and Gwilliam, R. M. and Homewood, Kevin P.",
year = "2008",
abstract = "We have studied the influence of the ion species, ion energy, fluence, irradiation temperature and post-implantation annealing on the formation of shallow dislocation loops in silicon, for fabrication of silicon light emitting diodes. The substrates used were (100) Si, implanted with 20-80 keV boron at room temperature and 75-175 keV silicon at 100 and 200 degrees C. The implanted fluences were from 5 x 10(14) to 1 x 10(15) ions/cm(2). After irradiation the samples were processed for 15 s to 20 min at 950 degrees C by rapid thermal annealing. Structural analysis of the samples was done by transmission electron microscopy and Rutherford backscattering spectrometry. In all irradiations the silicon substrates were not amorphized, and that resulted in the formation of extrinsic perfect and faulted dislocation loops with Burgers vectors a/2 LT 110 GT and a/3 LT 111 GT , respectively, sitting in {111} habit planes. It was demonstrated that by varying the ion implantation parameters and post-irradiation annealing, it is possible to form various shapes, concentration and distribution of dislocation loops in silicon. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes",
volume = "266",
number = "10",
pages = "2470-2474",
doi = "10.1016/j.nimb.2008.03.021"
}

Milosavljević, M., Lourenco, M. A., Shao, G., Gwilliam, R. M.,& Homewood, K. P.. (2008). Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2470-2474.
https://doi.org/10.1016/j.nimb.2008.03.021

Milosavljević M, Lourenco MA, Shao G, Gwilliam RM, Homewood KP. Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2470-2474.
doi:10.1016/j.nimb.2008.03.021 .

Milosavljević, Momir, Lourenco, M. A., Shao, G., Gwilliam, R. M., Homewood, Kevin P., "Formation of dislocation loops in silicon by ion irradiation for silicon light emitting diodes" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2470-2474,
https://doi.org/10.1016/j.nimb.2008.03.021 . .

TY  - JOUR
AU  - Wong, L.
AU  - Milosavljević, Momir
AU  - Lourenco, M. A.
AU  - Shao, G.
AU  - Valizadeh, R.
AU  - Colligon, J. S.
AU  - Homewood, Kevin P.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3392
AB  - We report here on the synthesis, optical and structural analysis of amorphous and polycrystalline FeSi(2) fabricated by co-sputter deposition. For comparisons, a range of deposition temperatures from room temperature up to 700 degrees C and post-anneals between 300 and 700 degrees C were performed. Optical absorption measurements were taken on all samples and results reveal that the bandgap remains direct in nature ranging from 0.897 to 0.949 eV. It was found that for amorphous thin films, annealing at low temperatures below 500 degrees C had little effect on the optical properties. The bandgap value and absorption coefficient only significantly increased upon annealing above 500 degrees C. This was found to be in good agreement with the transformation of the silicide from its amorphous phase to its crystalline beta-phase. In comparison, the deposition temperature was seen to affect the crystallinity of the as-deposited thin films and to vary both the optical and structural properties of the layers significantly. An increase in the deposition temperature not only decreased the bandgap energies but also significantly increased the photo-absorption by an order of magnitude.
T2  - Semiconductor Science and Technology
T1  - Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition
VL  - 23
IS  - 3
DO  - 10.1088/0268-1242/23/3/035007
ER  - 

@article{
author = "Wong, L. and Milosavljević, Momir and Lourenco, M. A. and Shao, G. and Valizadeh, R. and Colligon, J. S. and Homewood, Kevin P.",
year = "2008",
abstract = "We report here on the synthesis, optical and structural analysis of amorphous and polycrystalline FeSi(2) fabricated by co-sputter deposition. For comparisons, a range of deposition temperatures from room temperature up to 700 degrees C and post-anneals between 300 and 700 degrees C were performed. Optical absorption measurements were taken on all samples and results reveal that the bandgap remains direct in nature ranging from 0.897 to 0.949 eV. It was found that for amorphous thin films, annealing at low temperatures below 500 degrees C had little effect on the optical properties. The bandgap value and absorption coefficient only significantly increased upon annealing above 500 degrees C. This was found to be in good agreement with the transformation of the silicide from its amorphous phase to its crystalline beta-phase. In comparison, the deposition temperature was seen to affect the crystallinity of the as-deposited thin films and to vary both the optical and structural properties of the layers significantly. An increase in the deposition temperature not only decreased the bandgap energies but also significantly increased the photo-absorption by an order of magnitude.",
journal = "Semiconductor Science and Technology",
title = "Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition",
volume = "23",
number = "3",
doi = "10.1088/0268-1242/23/3/035007"
}

Wong, L., Milosavljević, M., Lourenco, M. A., Shao, G., Valizadeh, R., Colligon, J. S.,& Homewood, K. P.. (2008). Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition. in Semiconductor Science and Technology, 23(3).
https://doi.org/10.1088/0268-1242/23/3/035007

Wong L, Milosavljević M, Lourenco MA, Shao G, Valizadeh R, Colligon JS, Homewood KP. Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition. in Semiconductor Science and Technology. 2008;23(3).
doi:10.1088/0268-1242/23/3/035007 .

Wong, L., Milosavljević, Momir, Lourenco, M. A., Shao, G., Valizadeh, R., Colligon, J. S., Homewood, Kevin P., "Annealing and deposition temperature dependence of the bandgap of amorphous FeSi(2) fabricated by co-sputter deposition" in Semiconductor Science and Technology, 23, no. 3 (2008),
https://doi.org/10.1088/0268-1242/23/3/035007 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Shao, G
AU  - Lourenco, MA
AU  - Gwilliam, RM
AU  - Homewood, Kevin P.
AU  - Edwards, SP
AU  - Valizadeh, R
AU  - Colligon, JS
PY  - 2005
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2963
AB  - A study of the stability of amorphous FeSi2 films and their transition to a crystalline phase as a function of deposition or annealing temperature is presented. Stoichiometric FeSi2 films, 300-400 nm thick, were deposited on (100) Si substrates by co-sputtering of Fe and Si. It was found that the films grow in an amorphous form for the substrate temperature ranging from room temperature to 200 degrees C, while from 300-700 degrees C, they grow in form of a crystalline beta-FeSi2 phase. In a postdeposition 30 min heat treatments, the layers retain the amorphous structure up to 400 degrees C, transforming to the crystalline beta phase at 500-700 degrees C. The results are discussed in the frame of the existing models, and compared to those found in the literature. It is shown that in as-deposited films, the growth is controlled by surface diffusion, the crystalline layers growing in a columnar structure strongly correlated to the Si substrate. Postdeposition treatments induce a random crystallization controlled by bulk diffusion, the resulting structure not being influenced by the substrate. The results of this work contribute to a better understanding of the processes involved in a transition of amorphous FeSi2 films to a crystalline phase, and provide a basis to determine the processing parameters in potential applications of this promising semiconducting material. (c) 2005 American Institute of Physics.
T2  - Journal of Applied Physics
T1  - Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature
VL  - 98
IS  - 12
DO  - 10.1063/1.2148629
ER  - 

@article{
author = "Milosavljević, Momir and Shao, G and Lourenco, MA and Gwilliam, RM and Homewood, Kevin P. and Edwards, SP and Valizadeh, R and Colligon, JS",
year = "2005",
abstract = "A study of the stability of amorphous FeSi2 films and their transition to a crystalline phase as a function of deposition or annealing temperature is presented. Stoichiometric FeSi2 films, 300-400 nm thick, were deposited on (100) Si substrates by co-sputtering of Fe and Si. It was found that the films grow in an amorphous form for the substrate temperature ranging from room temperature to 200 degrees C, while from 300-700 degrees C, they grow in form of a crystalline beta-FeSi2 phase. In a postdeposition 30 min heat treatments, the layers retain the amorphous structure up to 400 degrees C, transforming to the crystalline beta phase at 500-700 degrees C. The results are discussed in the frame of the existing models, and compared to those found in the literature. It is shown that in as-deposited films, the growth is controlled by surface diffusion, the crystalline layers growing in a columnar structure strongly correlated to the Si substrate. Postdeposition treatments induce a random crystallization controlled by bulk diffusion, the resulting structure not being influenced by the substrate. The results of this work contribute to a better understanding of the processes involved in a transition of amorphous FeSi2 films to a crystalline phase, and provide a basis to determine the processing parameters in potential applications of this promising semiconducting material. (c) 2005 American Institute of Physics.",
journal = "Journal of Applied Physics",
title = "Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature",
volume = "98",
number = "12",
doi = "10.1063/1.2148629"
}

Milosavljević, M., Shao, G., Lourenco, M., Gwilliam, R., Homewood, K. P., Edwards, S., Valizadeh, R.,& Colligon, J.. (2005). Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature. in Journal of Applied Physics, 98(12).
https://doi.org/10.1063/1.2148629

Milosavljević M, Shao G, Lourenco M, Gwilliam R, Homewood KP, Edwards S, Valizadeh R, Colligon J. Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature. in Journal of Applied Physics. 2005;98(12).
doi:10.1063/1.2148629 .

Milosavljević, Momir, Shao, G, Lourenco, MA, Gwilliam, RM, Homewood, Kevin P., Edwards, SP, Valizadeh, R, Colligon, JS, "Transition from amorphous to crystalline beta phase in co-sputtered FeSi2 films as a function of temperature" in Journal of Applied Physics, 98, no. 12 (2005),
https://doi.org/10.1063/1.2148629 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Shao, G
AU  - Bibić, Nataša M.
AU  - McKinty, CN
AU  - Jeynes, C
AU  - Homewood, Kevin P.
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6329
AB  - The existence of amorphous semiconducting FeSi2, having a direct band gap of 0.88 eV. is demonstrated. It was synthesized by ion beam mixing of 50 nm Fe on Si(1 0 0) with 120 keV Ar-8 ions, at 300 degreesC. Rapid diffusion of Si to the surface is assigned to be the dominating process that results in the formation of amorphous FeSi2 phase, Other Synthesis techniques should be possible for fabrication of this material. and it Could be applied in large area electronics, (C) 2002 Published by Elsevier Science B.V.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Synthesis of amorphous FeSi2 by ion beam mixing
VL  - 188
SP  - 166
EP  - 169
DO  - 10.1016/S0168-583X(01)01068-0
ER  - 

@article{
author = "Milosavljević, Momir and Shao, G and Bibić, Nataša M. and McKinty, CN and Jeynes, C and Homewood, Kevin P.",
year = "2002",
abstract = "The existence of amorphous semiconducting FeSi2, having a direct band gap of 0.88 eV. is demonstrated. It was synthesized by ion beam mixing of 50 nm Fe on Si(1 0 0) with 120 keV Ar-8 ions, at 300 degreesC. Rapid diffusion of Si to the surface is assigned to be the dominating process that results in the formation of amorphous FeSi2 phase, Other Synthesis techniques should be possible for fabrication of this material. and it Could be applied in large area electronics, (C) 2002 Published by Elsevier Science B.V.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Synthesis of amorphous FeSi2 by ion beam mixing",
volume = "188",
pages = "166-169",
doi = "10.1016/S0168-583X(01)01068-0"
}

Milosavljević, M., Shao, G., Bibić, N. M., McKinty, C., Jeynes, C.,& Homewood, K. P.. (2002). Synthesis of amorphous FeSi2 by ion beam mixing. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 188, 166-169.
https://doi.org/10.1016/S0168-583X(01)01068-0

Milosavljević M, Shao G, Bibić NM, McKinty C, Jeynes C, Homewood KP. Synthesis of amorphous FeSi2 by ion beam mixing. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2002;188:166-169.
doi:10.1016/S0168-583X(01)01068-0 .

Milosavljević, Momir, Shao, G, Bibić, Nataša M., McKinty, CN, Jeynes, C, Homewood, Kevin P., "Synthesis of amorphous FeSi2 by ion beam mixing" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 188 (2002):166-169,
https://doi.org/10.1016/S0168-583X(01)01068-0 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Dhar, S
AU  - Lieb, KP
AU  - Milosavljević, Momir
AU  - Schaaf, P
AU  - Huang, YL
AU  - Seibt, M
AU  - Homewood, Kevin P.
AU  - McKinty, C
PY  - 2002
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6340
AB  - This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions. By irradiation of 35 nm Fe on Si, at 600 degreesC with 205 keV Xe to 2 X 10(16) ions/cm(2), the formation of similar to 105 nm single-phase beta-FeSi(2) layers was achieved. Their structures were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectroscopy, high resolution transmission electron microscopy, and photo-absorption. The structural analyses revealed that the beta-FeSi(2) layers grow in the form of irregularly shaped crystal grains, with a pronounced surface morphology, but with a rather sharp silicide/silicon interface. The grains that originate from the interface are epitaxially oriented relative to the Si(100) substrate. Optical absorption, as compared with that in beta-FeSi(2) layers produced by ion beam synthesis or co-sputter deposition, indicates a direct band gap of 0.92 eV A pronounced surface roughness of the ion beam mixed layers yielded photo-absorption approximately three times higher as compared with the other two sets of samples. The band gap stays nearly constant over the temperature range from 80 to 295 K. This is tentatively assigned to a high degree of structural disorder and stress induced in the ion beam mixed beta-FeSi(2) layers. (C) 2002 Elsevier Science B.V. All rights reserved.
T2  - Surface and Coatings Technology
T1  - Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing
VL  - 158
SP  - 198
EP  - 202
DO  - 10.1016/S0257-8972(02)00205-0
ER  - 

@article{
author = "Bibić, Nataša M. and Dhar, S and Lieb, KP and Milosavljević, Momir and Schaaf, P and Huang, YL and Seibt, M and Homewood, Kevin P. and McKinty, C",
year = "2002",
abstract = "This study deals with structural and optical properties of beta-FeSi(2) layers produced by direct ion beam mixing of Fe/Si bilayers with Xe ions. By irradiation of 35 nm Fe on Si, at 600 degreesC with 205 keV Xe to 2 X 10(16) ions/cm(2), the formation of similar to 105 nm single-phase beta-FeSi(2) layers was achieved. Their structures were analyzed by Rutherford backscattering spectroscopy, X-ray diffraction, conversion electron Mossbauer spectroscopy, high resolution transmission electron microscopy, and photo-absorption. The structural analyses revealed that the beta-FeSi(2) layers grow in the form of irregularly shaped crystal grains, with a pronounced surface morphology, but with a rather sharp silicide/silicon interface. The grains that originate from the interface are epitaxially oriented relative to the Si(100) substrate. Optical absorption, as compared with that in beta-FeSi(2) layers produced by ion beam synthesis or co-sputter deposition, indicates a direct band gap of 0.92 eV A pronounced surface roughness of the ion beam mixed layers yielded photo-absorption approximately three times higher as compared with the other two sets of samples. The band gap stays nearly constant over the temperature range from 80 to 295 K. This is tentatively assigned to a high degree of structural disorder and stress induced in the ion beam mixed beta-FeSi(2) layers. (C) 2002 Elsevier Science B.V. All rights reserved.",
journal = "Surface and Coatings Technology",
title = "Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing",
volume = "158",
pages = "198-202",
doi = "10.1016/S0257-8972(02)00205-0"
}

Bibić, N. M., Dhar, S., Lieb, K., Milosavljević, M., Schaaf, P., Huang, Y., Seibt, M., Homewood, K. P.,& McKinty, C.. (2002). Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing. in Surface and Coatings Technology, 158, 198-202.
https://doi.org/10.1016/S0257-8972(02)00205-0

Bibić NM, Dhar S, Lieb K, Milosavljević M, Schaaf P, Huang Y, Seibt M, Homewood KP, McKinty C. Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing. in Surface and Coatings Technology. 2002;158:198-202.
doi:10.1016/S0257-8972(02)00205-0 .

Bibić, Nataša M., Dhar, S, Lieb, KP, Milosavljević, Momir, Schaaf, P, Huang, YL, Seibt, M, Homewood, Kevin P., McKinty, C, "Structural and optical properties of beta-FeSi(2) layers grown by ion beam mixing" in Surface and Coatings Technology, 158 (2002):198-202,
https://doi.org/10.1016/S0257-8972(02)00205-0 . .

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Shao, G
AU  - Bibić, Nataša M.
AU  - McKinty, CN
AU  - Jeynes, C
AU  - Homewood, Kevin P.
PY  - 2001
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2453
AB  - We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics.
T2  - Applied Physics Letters
T1  - Amorphous-iron disilicide: A promising semiconductor
VL  - 79
IS  - 10
SP  - 1438
EP  - 1440
DO  - 10.1063/1.1400760
ER  - 

@article{
author = "Milosavljević, Momir and Shao, G and Bibić, Nataša M. and McKinty, CN and Jeynes, C and Homewood, Kevin P.",
year = "2001",
abstract = "We report here the synthesis and the measurements of the microstructural and optical properties of a promising semiconductor, amorphous-iron disilicide. The material was obtained by ion-beam mixing of Fe layers on Si, with Ar8+ ions, at 300 degreesC. Optical absorption measurements indicate a semiconductor with a direct band gap of 0.88 eV. The significance of this discovery is that it demonstrates the existence of such a material. It should be possible to synthesize by other techniques and could be applied in large-area electronics. (C) 2001 American Institute of Physics.",
journal = "Applied Physics Letters",
title = "Amorphous-iron disilicide: A promising semiconductor",
volume = "79",
number = "10",
pages = "1438-1440",
doi = "10.1063/1.1400760"
}

Milosavljević, M., Shao, G., Bibić, N. M., McKinty, C., Jeynes, C.,& Homewood, K. P.. (2001). Amorphous-iron disilicide: A promising semiconductor. in Applied Physics Letters, 79(10), 1438-1440.
https://doi.org/10.1063/1.1400760

Milosavljević M, Shao G, Bibić NM, McKinty C, Jeynes C, Homewood KP. Amorphous-iron disilicide: A promising semiconductor. in Applied Physics Letters. 2001;79(10):1438-1440.
doi:10.1063/1.1400760 .

Milosavljević, Momir, Shao, G, Bibić, Nataša M., McKinty, CN, Jeynes, C, Homewood, Kevin P., "Amorphous-iron disilicide: A promising semiconductor" in Applied Physics Letters, 79, no. 10 (2001):1438-1440,
https://doi.org/10.1063/1.1400760 . .

TY  - JOUR
AU  - Barradas, NP
AU  - Jeynes, C
AU  - Homewood, Kevin P.
AU  - Sealy, BJ
AU  - Milosavljević, Momir
PY  - 1998
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6237
AB  - Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 x 10(15) and 2.5 x 10(16) cm(-2), or 300 keV Xe to doses between 5 x 1015 and 1 x 10(16) cm(-2). Some of the samples were subsequently annealed at 900 degrees C for 2.5 h. The mixing between the Si and Fe was studied with Rutherford backscattering (RBS). The analysis of the RES data was done with the combinatorial optimisation simulated annealing (SA) algorithm. Although a homogeneous silicide layer is not formed, the superposition of the Si and Fe profiles after annealing leads to the formation of regions of beta-FeSi2, as is demonstrated by temperature dependent photoabsorption experiments which show the existence of a band gap of 0.87 eV at room temperature. (C) 1998 Elsevier Science B.V.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - RBS/simulated annealing analysis of silicide formation in Fe/Si systems
VL  - 139
IS  - 1-4
SP  - 235
EP  - 238
DO  - 10.1016/S0168-583X(97)00964-6
ER  - 

@article{
author = "Barradas, NP and Jeynes, C and Homewood, Kevin P. and Sealy, BJ and Milosavljević, Momir",
year = "1998",
abstract = "Thin Fe films were deposited by de sputtering onto Si to thicknesses between 50 and 120 nm. This was followed by implantation of 350 keV As to doses between 5 x 10(15) and 2.5 x 10(16) cm(-2), or 300 keV Xe to doses between 5 x 1015 and 1 x 10(16) cm(-2). Some of the samples were subsequently annealed at 900 degrees C for 2.5 h. The mixing between the Si and Fe was studied with Rutherford backscattering (RBS). The analysis of the RES data was done with the combinatorial optimisation simulated annealing (SA) algorithm. Although a homogeneous silicide layer is not formed, the superposition of the Si and Fe profiles after annealing leads to the formation of regions of beta-FeSi2, as is demonstrated by temperature dependent photoabsorption experiments which show the existence of a band gap of 0.87 eV at room temperature. (C) 1998 Elsevier Science B.V.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "RBS/simulated annealing analysis of silicide formation in Fe/Si systems",
volume = "139",
number = "1-4",
pages = "235-238",
doi = "10.1016/S0168-583X(97)00964-6"
}

Barradas, N., Jeynes, C., Homewood, K. P., Sealy, B.,& Milosavljević, M.. (1998). RBS/simulated annealing analysis of silicide formation in Fe/Si systems. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 139(1-4), 235-238.
https://doi.org/10.1016/S0168-583X(97)00964-6

Barradas N, Jeynes C, Homewood KP, Sealy B, Milosavljević M. RBS/simulated annealing analysis of silicide formation in Fe/Si systems. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 1998;139(1-4):235-238.
doi:10.1016/S0168-583X(97)00964-6 .

Barradas, NP, Jeynes, C, Homewood, Kevin P., Sealy, BJ, Milosavljević, Momir, "RBS/simulated annealing analysis of silicide formation in Fe/Si systems" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 139, no. 1-4 (1998):235-238,
https://doi.org/10.1016/S0168-583X(97)00964-6 . .