TY  - JOUR
AU  - Gloginjić, Marko
AU  - Erich, Marko
AU  - Kokkoris, Michael
AU  - Liarokapis, Efthymios
AU  - Fazinić, Stjepko
AU  - Karlušić, Marko
AU  - Tomić Luketić, Kristina
AU  - Petrović, Srđan M.
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9858
AB  - The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.
T2  - Journal of Nuclear Materials
T1  - The quantitative 6H-SiC crystal damage depth profiling
VL  - 555
SP  - 153143
DO  - 10.1016/j.jnucmat.2021.153143
ER  - 

@article{
author = "Gloginjić, Marko and Erich, Marko and Kokkoris, Michael and Liarokapis, Efthymios and Fazinić, Stjepko and Karlušić, Marko and Tomić Luketić, Kristina and Petrović, Srđan M.",
year = "2021",
abstract = "The hexagonal silicon carbide (6H-SiC) is one of materials used in nuclear applications, and as such is exposed to crystal damage inducing by variety of energetic particles like neutrons. In this article the 6H-SiC crystal lattice damage was introduced by the 4 MeV C3+ and 4 MeV Si3+ channelling ion implantation at the room temperature. The implantation of C and Si ions (so called self-ions) to the set of different fluences, achieves a 6H-SiC crystal lattice damage more similar to what the exposure to neutrons would produce. The 6H-SiC crystal damage has been investigated by the Elastic Backscattering spectra taken in the channeling orientation (EBS/C). EBS/C spectra of the implanted 6H-SiC samples were taken with 1.725 MeV and 1.860 MeV protons. By fitting the EBS/C spectra, the quantitative 6H-SiC crystal damage depth profiles were obtained. Further, the cross section of crystal's implanted region has been scanned with the micro-Raman (μR) technique for a comparison. In this way, the qualitative analysis of a non-crystalline phase as a function of the crystal depth was independently determined. Additionally, a scanning electron microscopy (SEM) image was taken of the implanted crystal cross sections. The comparison of the crystal damage profiles obtained by fitting EBS/C spectra with the corresponding ones obtained with the μR and SEM techniques shows very good consistency between them.",
journal = "Journal of Nuclear Materials",
title = "The quantitative 6H-SiC crystal damage depth profiling",
volume = "555",
pages = "153143",
doi = "10.1016/j.jnucmat.2021.153143"
}

Gloginjić, M., Erich, M., Kokkoris, M., Liarokapis, E., Fazinić, S., Karlušić, M., Tomić Luketić, K.,& Petrović, S. M.. (2021). The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials, 555, 153143.
https://doi.org/10.1016/j.jnucmat.2021.153143

Gloginjić M, Erich M, Kokkoris M, Liarokapis E, Fazinić S, Karlušić M, Tomić Luketić K, Petrović SM. The quantitative 6H-SiC crystal damage depth profiling. in Journal of Nuclear Materials. 2021;555:153143.
doi:10.1016/j.jnucmat.2021.153143 .

Gloginjić, Marko, Erich, Marko, Kokkoris, Michael, Liarokapis, Efthymios, Fazinić, Stjepko, Karlušić, Marko, Tomić Luketić, Kristina, Petrović, Srđan M., "The quantitative 6H-SiC crystal damage depth profiling" in Journal of Nuclear Materials, 555 (2021):153143,
https://doi.org/10.1016/j.jnucmat.2021.153143 . .