TY  - JOUR
AU  - Lončar, Boris B.
AU  - Osmokrović, Predrag V.
AU  - Stanković, Srboljub
AU  - Šašić, Rajko
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3010
AB  - The aim of this paper is to find the possibility for improvement of gas-filled surge arresters (GFSA) characteristics in y and X radiation field by appropriate choice of electrode materials. For that purpose electrodes made of different materials were incorporated in the originally developed GFSA model. The obtained results show that both in y and X radiation fields, copper electrodes are an optimal solution, since they have the highest resistance to radiation effects. It is also shown GFSA are highly resistant to y radiation, but that X radiation leads to significant degradation of their characteristics.
T2  - Journal of Optoelectronics and Advanced Materials
T1  - Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field
VL  - 8
IS  - 2
SP  - 863
EP  - 866
UR  - https://hdl.handle.net/21.15107/rcub_vinar_3010
ER  - 

@article{
author = "Lončar, Boris B. and Osmokrović, Predrag V. and Stanković, Srboljub and Šašić, Rajko",
year = "2006",
abstract = "The aim of this paper is to find the possibility for improvement of gas-filled surge arresters (GFSA) characteristics in y and X radiation field by appropriate choice of electrode materials. For that purpose electrodes made of different materials were incorporated in the originally developed GFSA model. The obtained results show that both in y and X radiation fields, copper electrodes are an optimal solution, since they have the highest resistance to radiation effects. It is also shown GFSA are highly resistant to y radiation, but that X radiation leads to significant degradation of their characteristics.",
journal = "Journal of Optoelectronics and Advanced Materials",
title = "Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field",
volume = "8",
number = "2",
pages = "863-866",
url = "https://hdl.handle.net/21.15107/rcub_vinar_3010"
}

Lončar, B. B., Osmokrović, P. V., Stanković, S.,& Šašić, R.. (2006). Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field. in Journal of Optoelectronics and Advanced Materials, 8(2), 863-866.
https://hdl.handle.net/21.15107/rcub_vinar_3010

Lončar BB, Osmokrović PV, Stanković S, Šašić R. Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field. in Journal of Optoelectronics and Advanced Materials. 2006;8(2):863-866.
https://hdl.handle.net/21.15107/rcub_vinar_3010 .

Lončar, Boris B., Osmokrović, Predrag V., Stanković, Srboljub, Šašić, Rajko, "Influence of electrode material on gas-filled surge arresters characteristics in gamma and X radiation field" in Journal of Optoelectronics and Advanced Materials, 8, no. 2 (2006):863-866,
https://hdl.handle.net/21.15107/rcub_vinar_3010 .

TY  - CONF
AU  - Šašić, Rajko
AU  - Čevizović, Dalibor
AU  - Galović, Slobodanka
AU  - Ramovic, R
PY  - 2004
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6453
AB  - In this paper, new analytical expressions have been derived setting the relation among channel carrier capacitance C(2D), sheet density carriers n(s), gate bias v(G), intrinsic parameters of semiconductor layers, and devices geometry. The dependence of both, n(s) and c(2D) on inverse gate polarisation has been compared with literature values. The influence of donor doping concentration N(D) to characteristics n(s) (v(G)) and c(2D)(v(G)) has been investigated by the suggested analytical model. Also, the current-gain cutoff frequency f(t) has been calculated for a short channel MODFET. The discrepancy between the calculated f(t) and literature value has been discussed.
T1  - Evaluating of MODFET gate capacitance and current gain cutoff frequency
SP  - 311
EP  - 314
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6453
ER  - 

@conference{
author = "Šašić, Rajko and Čevizović, Dalibor and Galović, Slobodanka and Ramovic, R",
year = "2004",
abstract = "In this paper, new analytical expressions have been derived setting the relation among channel carrier capacitance C(2D), sheet density carriers n(s), gate bias v(G), intrinsic parameters of semiconductor layers, and devices geometry. The dependence of both, n(s) and c(2D) on inverse gate polarisation has been compared with literature values. The influence of donor doping concentration N(D) to characteristics n(s) (v(G)) and c(2D)(v(G)) has been investigated by the suggested analytical model. Also, the current-gain cutoff frequency f(t) has been calculated for a short channel MODFET. The discrepancy between the calculated f(t) and literature value has been discussed.",
title = "Evaluating of MODFET gate capacitance and current gain cutoff frequency",
pages = "311-314",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6453"
}

Šašić, R., Čevizović, D., Galović, S.,& Ramovic, R.. (2004). Evaluating of MODFET gate capacitance and current gain cutoff frequency. , 311-314.
https://hdl.handle.net/21.15107/rcub_vinar_6453

Šašić R, Čevizović D, Galović S, Ramovic R. Evaluating of MODFET gate capacitance and current gain cutoff frequency. 2004;:311-314.
https://hdl.handle.net/21.15107/rcub_vinar_6453 .

Šašić, Rajko, Čevizović, Dalibor, Galović, Slobodanka, Ramovic, R, "Evaluating of MODFET gate capacitance and current gain cutoff frequency" (2004):311-314,
https://hdl.handle.net/21.15107/rcub_vinar_6453 .