Simic, Biljana

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  • Simic, Biljana (1)
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Author's Bibliography

Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors

Simic, Biljana; Nikolic, Dejan; Stanković, Koviljka; Timotijevic, Ljubinko; Stanković, Srboljub

(2013)

TY  - JOUR
AU  - Simic, Biljana
AU  - Nikolic, Dejan
AU  - Stanković, Koviljka
AU  - Timotijevic, Ljubinko
AU  - Stanković, Srboljub
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5542
AB  - This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7 x 10(6) n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.
T2  - International Journal of Photoenergy
T1  - Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors
DO  - 10.1155/2013/582819
ER  - 
@article{
author = "Simic, Biljana and Nikolic, Dejan and Stanković, Koviljka and Timotijevic, Ljubinko and Stanković, Srboljub",
year = "2013",
abstract = "This study investigates the effects of neutron radiation on I-V characteristics (current dependance on voltage) of commercial optoelectronic devices (silicon photodiodes, phototransistors, and solar panels). Current-voltage characteristics of the samples were measured at room temperature before and after irradiation. The diodes were irradiated using Am-Be neutron source with neutron emission of 2.7 x 10(6) n/s. The results showed a decrease in photocurrent for all samples which could be due to the existence of neutron-induced displacement defects introduced into the semiconductor lattice. The process of annealing has also been observed. A comparative analysis of measurement results has been performed in order to determine the reliability of optoelectronic devices in radiation environments.",
journal = "International Journal of Photoenergy",
title = "Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors",
doi = "10.1155/2013/582819"
}
Simic, B., Nikolic, D., Stanković, K., Timotijevic, L.,& Stanković, S.. (2013). Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors. in International Journal of Photoenergy.
https://doi.org/10.1155/2013/582819
Simic B, Nikolic D, Stanković K, Timotijevic L, Stanković S. Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors. in International Journal of Photoenergy. 2013;.
doi:10.1155/2013/582819 .
Simic, Biljana, Nikolic, Dejan, Stanković, Koviljka, Timotijevic, Ljubinko, Stanković, Srboljub, "Damage Induced by Neutron Radiation on Output Characteristics of Solar Cells, Photodiodes, and Phototransistors" in International Journal of Photoenergy (2013),
https://doi.org/10.1155/2013/582819 . .
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