TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Živanović, E.
AU  - Stanković, Srboljub
AU  - Anđelković, M.
AU  - Ristić, G.
AU  - Paskleva, A.
AU  - Spassov, D.
AU  - Danković, Danijel
AU  - Manić, I.
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12120
AB  - This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 33rd International Conference on Microelectronics : Proceedings book
T1  - Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation
SP  - 277
EP  - 280
DO  - 10.1109/MIEL58498.2023.10315932
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Živanović, E. and Stanković, Srboljub and Anđelković, M. and Ristić, G. and Paskleva, A. and Spassov, D. and Danković, Danijel and Manić, I.",
year = "2023",
abstract = "This paper investigates the impact of negative bias temperature stress on irradiated commercial p-channel power VDMOS transistors, particularly focusing on gate oxide charge and interface trap alterations and their contribution to threshold voltage shifts. The study addresses the critical issue of transistor reliability, as threshold voltage shifts can significantly affect device performance, especially in elevated temperature and negative gate oxide field conditions. Additionally, the research explores the effects of irradiation on VDMOS power transistors, emphasizing the importance of understanding the associated electrical parameter changes. The paper presents a comprehensive analysis of static and pulsed NBT stressing, with a specific focus on novel stress signals encountered in practical applications. The experimental procedure involves irradiation and NBT stress, and the results reveal insights into the contributions of gate oxide charge and interface traps to threshold voltage shifts. The findings shed light on the reliability of electronic equipment incorporating p-channel power VDMOS transistors under various stress conditions, offering valuable insights for device design and operation.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 33rd International Conference on Microelectronics : Proceedings book",
title = "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation",
pages = "277-280",
doi = "10.1109/MIEL58498.2023.10315932"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Živanović, E., Stanković, S., Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, D.,& Manić, I.. (2023). Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 277-280.
https://doi.org/10.1109/MIEL58498.2023.10315932

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Živanović E, Stanković S, Anđelković M, Ristić G, Paskleva A, Spassov D, Danković D, Manić I. Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation. in MIEL : 33rd International Conference on Microelectronics : Proceedings book. 2023;:277-280.
doi:10.1109/MIEL58498.2023.10315932 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Živanović, E., Stanković, Srboljub, Anđelković, M., Ristić, G., Paskleva, A., Spassov, D., Danković, Danijel, Manić, I., "Effects in Commercial p-Channel Power VDMOS Transistors Initiated by Negative Bias Temperature Stress and Irradiation" in MIEL : 33rd International Conference on Microelectronics : Proceedings book (2023):277-280,
https://doi.org/10.1109/MIEL58498.2023.10315932 . .

TY  - JOUR
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Davidović, Vojkan
AU  - Golubović, Snežana
AU  - Djorić-Veljković, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dencho
AU  - Stanković, Srboljub
AU  - Andjelković, Marko
AU  - Prijić, Zoran
AU  - Manić, Ivica
AU  - Prijić, Aneta
AU  - Ristić, Goran
AU  - Danković, Danijel
PY  - 2022
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12130
AB  - n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress
T2  - Journal of Circuits, Systems and Computers
T1  - Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress
VL  - 31
IS  - 18
SP  - 2240003
DO  - 10.1142/S0218126622400035
ER  - 

@article{
author = "Veljković, Sandra and Mitrović, Nikola and Davidović, Vojkan and Golubović, Snežana and Djorić-Veljković, Snežana and Paskaleva, Albena and Spassov, Dencho and Stanković, Srboljub and Andjelković, Marko and Prijić, Zoran and Manić, Ivica and Prijić, Aneta and Ristić, Goran and Danković, Danijel",
year = "2022",
abstract = "n this paper, the e®ects of successively applied static/pulsed negative bias temperature (NBT)stress and irradiation on commercial p-channel power vertical double-di®used metal-oxidesemiconductor (VDMOS) transistors are investigated. To further illustrate the impacts of thesestresses on the power devices, the relative contributions of gate oxide charge (Not) and interfacetraps (Nit) to threshold voltage shifts are shown and studied. It was shown that when irradi-ation without gate voltage is used, the duration of the pre-irradiation static NBT stress has aslightly larger e®ect on the radiation response of power VDMOS transistors. Regarding the factthat the investigated components are more likely to function in the dynamic mode than thestatic mode in practice, additional analysis was focused on the results obtained during thepulsed NBT stress after irradiation. For the components subjected to the pulsed NBT stressafter the irradiation, the e®ects ofNotneutralization andNitpassivation (usually related toannealing) are more enhanced than the components subjected to the static NBT stress, becauseonly a high temperature is applied during the pulse-o® state. It was observed that in devicespreviously irradiated with gate voltage applied, the decrease of threshold voltage shift is sig-ni ̄cantly greater during the pulsed NBT stress than during the static NBT stress",
journal = "Journal of Circuits, Systems and Computers",
title = "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress",
volume = "31",
number = "18",
pages = "2240003",
doi = "10.1142/S0218126622400035"
}

Veljković, S., Mitrović, N., Davidović, V., Golubović, S., Djorić-Veljković, S., Paskaleva, A., Spassov, D., Stanković, S., Andjelković, M., Prijić, Z., Manić, I., Prijić, A., Ristić, G.,& Danković, D.. (2022). Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers, 31(18), 2240003.
https://doi.org/10.1142/S0218126622400035

Veljković S, Mitrović N, Davidović V, Golubović S, Djorić-Veljković S, Paskaleva A, Spassov D, Stanković S, Andjelković M, Prijić Z, Manić I, Prijić A, Ristić G, Danković D. Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress. in Journal of Circuits, Systems and Computers. 2022;31(18):2240003.
doi:10.1142/S0218126622400035 .

Veljković, Sandra, Mitrović, Nikola, Davidović, Vojkan, Golubović, Snežana, Djorić-Veljković, Snežana, Paskaleva, Albena, Spassov, Dencho, Stanković, Srboljub, Andjelković, Marko, Prijić, Zoran, Manić, Ivica, Prijić, Aneta, Ristić, Goran, Danković, Danijel, "Response of Commercial P-Channel Power VDMOS Transistors to Ionizing Irradiation and Bias Temperature Stress" in Journal of Circuits, Systems and Computers, 31, no. 18 (2022):2240003,
https://doi.org/10.1142/S0218126622400035 . .

TY  - CONF
AU  - Veljković, Sandra
AU  - Mitrović, Nikola
AU  - Đorić-Veljković, Snežana
AU  - Davidović, Vojkan
AU  - Manić, Ivica
AU  - Golubović, Snežana
AU  - Paskaleva, Albena
AU  - Spassov, Dentcho
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stanković, Srboljub
AU  - Danković, Danijel
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12119
AB  - The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.
PB  - IEEE : Institute of Electrical and Electronics Engineers
C3  - MIEL : 32nd International Conference on Microelectronics : Proceedings book
T1  - Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors
SP  - 345
EP  - 350
DO  - 10.1109/MIEL52794.2021.9569154
ER  - 

@conference{
author = "Veljković, Sandra and Mitrović, Nikola and Đorić-Veljković, Snežana and Davidović, Vojkan and Manić, Ivica and Golubović, Snežana and Paskaleva, Albena and Spassov, Dentcho and Prijić, Zoran and Prijić, Aneta and Stanković, Srboljub and Danković, Danijel",
year = "2021",
abstract = "The effects of bias temperature stress and irradiation in commercial p-channel power VDMOS transistors were investigated. In order to additionally elucidate the effects that take place in these power devices during the irradiation after the NBT stress, the relative contributions of gate oxide charge (ΔVot/ΔVTH) and interface traps (ΔVit/ΔVTH) to the threshold voltage shifts are presented and analyzed. It was found that in the case of irradiation without gate voltage the duration of the preirradiation NBT stress had a more pronounced impact on the radiation response of power VDMOS transistors, and that the contribution of the oxide trapped charge plays a more pronounced role in components previously NBT stressed for 1 hour than in those stressed for 1 week.",
publisher = "IEEE : Institute of Electrical and Electronics Engineers",
journal = "MIEL : 32nd International Conference on Microelectronics : Proceedings book",
title = "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors",
pages = "345-350",
doi = "10.1109/MIEL52794.2021.9569154"
}

Veljković, S., Mitrović, N., Đorić-Veljković, S., Davidović, V., Manić, I., Golubović, S., Paskaleva, A., Spassov, D., Prijić, Z., Prijić, A., Stanković, S.,& Danković, D.. (2021). Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book
IEEE : Institute of Electrical and Electronics Engineers., 345-350.
https://doi.org/10.1109/MIEL52794.2021.9569154

Veljković S, Mitrović N, Đorić-Veljković S, Davidović V, Manić I, Golubović S, Paskaleva A, Spassov D, Prijić Z, Prijić A, Stanković S, Danković D. Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors. in MIEL : 32nd International Conference on Microelectronics : Proceedings book. 2021;:345-350.
doi:10.1109/MIEL52794.2021.9569154 .

Veljković, Sandra, Mitrović, Nikola, Đorić-Veljković, Snežana, Davidović, Vojkan, Manić, Ivica, Golubović, Snežana, Paskaleva, Albena, Spassov, Dentcho, Prijić, Zoran, Prijić, Aneta, Stanković, Srboljub, Danković, Danijel, "Effects of Bias Temperature Stress and Irradiation in Commercial p-Channel Power VDMOS Transistors" in MIEL : 32nd International Conference on Microelectronics : Proceedings book (2021):345-350,
https://doi.org/10.1109/MIEL52794.2021.9569154 . .

TY  - JOUR
AU  - Spassov, Dencho
AU  - Paskaleva, Albena
AU  - Guziewicz, Elżbieta
AU  - Davidović, Vojkan
AU  - Stanković, Srboljub
AU  - Đorić-Veljković, Snežana
AU  - Ivanov, Tzvetan
AU  - Stanchev, Todor
AU  - Stojadinović, Ninoslav
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9089
AB  - High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.
T2  - Materials
T1  - Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics
VL  - 14
IS  - 4
SP  - 849
DO  - 10.3390/ma14040849
ER  - 

@article{
author = "Spassov, Dencho and Paskaleva, Albena and Guziewicz, Elżbieta and Davidović, Vojkan and Stanković, Srboljub and Đorić-Veljković, Snežana and Ivanov, Tzvetan and Stanchev, Todor and Stojadinović, Ninoslav",
year = "2021",
abstract = "High-k dielectric stacks are regarded as a promising information storage media in the Charge Trapping Non-Volatile Memories, which are the most viable alternative to the standard floating gate memory technology. The implementation of high-k materials in real devices requires (among the other investigations) estimation of their radiation hardness. Here we report the effect of gamma radiation (60Co source, doses of 10 and 10 kGy) on dielectric properties, memory windows, leakage currents and retention characteristics of nanolaminated HfO2/Al2O3 stacks obtained by atomic layer deposition and its relationship with post-deposition annealing in oxygen and nitrogen ambient. The results reveal that depending on the dose, either increase or reduction of all kinds of electrically active defects (i.e., initial oxide charge, fast and slow interface states) can be observed. Radiation generates oxide charges with a different sign in O2 and N2 annealed stacks. The results clearly demonstrate a substantial increase in memory windows of the as-grown and oxygen treated stacks resulting from enhancement of the electron trapping. The leakage currents and the retention times of O2 annealed stacks are not deteriorated by irradiation, hence these stacks have high radiation tolerance.",
journal = "Materials",
title = "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics",
volume = "14",
number = "4",
pages = "849",
doi = "10.3390/ma14040849"
}

Spassov, D., Paskaleva, A., Guziewicz, E., Davidović, V., Stanković, S., Đorić-Veljković, S., Ivanov, T., Stanchev, T.,& Stojadinović, N.. (2021). Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials, 14(4), 849.
https://doi.org/10.3390/ma14040849

Spassov D, Paskaleva A, Guziewicz E, Davidović V, Stanković S, Đorić-Veljković S, Ivanov T, Stanchev T, Stojadinović N. Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics. in Materials. 2021;14(4):849.
doi:10.3390/ma14040849 .

Spassov, Dencho, Paskaleva, Albena, Guziewicz, Elżbieta, Davidović, Vojkan, Stanković, Srboljub, Đorić-Veljković, Snežana, Ivanov, Tzvetan, Stanchev, Todor, Stojadinović, Ninoslav, "Radiation Tolerance and Charge Trapping Enhancement of ALD HfO2/Al2O3 Nanolaminated Dielectrics" in Materials, 14, no. 4 (2021):849,
https://doi.org/10.3390/ma14040849 . .

TY  - CONF
AU  - Stanković, Srboljub
AU  - Nikolić, Dragana
AU  - Kržanović, Nikola
AU  - Nađđerđ, Laslo
AU  - Davidović, Vojkan S.
PY  - 2019
UR  - https://ieeexplore.ieee.org/document/8889613/
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8659
AB  - The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.
PB  - IEEE
C3  - IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings
T1  - Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation
SP  - 181
EP  - 184
DO  - 10.1109/MIEL.2019.8889613
ER  - 

@conference{
author = "Stanković, Srboljub and Nikolić, Dragana and Kržanović, Nikola and Nađđerđ, Laslo and Davidović, Vojkan S.",
year = "2019",
abstract = "The paper presents the application of a numerical method for the determination of the absorbed dose rate of gamma and X radiation in the dielectric thin layer of hafnium dioxide (RfO2) or SiO2, which is located in the structure of the MOS capacitor. Considering the radiation characteristics of the selected dielectrics, it can be concluded that there are advantages of RfO2 over SiO2 in the radiation field with high-energy X-rays. Similar radiation effects should be expected for the interaction of dielectric material with gamma ray photons originating from a Co-60 source, both in the dielectric layer with SiO2 and in that with RfO2. It can be concluded that for the same radiation absorbed dose into the MOS capacitor with RfO2, there are a greater number of generated electron-hole pairs, in which case the value of effective trapping efficiency is smaller than if SiO2 was used. © 2019 IEEE.",
publisher = "IEEE",
journal = "IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings",
title = "Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation",
pages = "181-184",
doi = "10.1109/MIEL.2019.8889613"
}

Stanković, S., Nikolić, D., Kržanović, N., Nađđerđ, L.,& Davidović, V. S.. (2019). Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation. in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings
IEEE., 181-184.
https://doi.org/10.1109/MIEL.2019.8889613

Stanković S, Nikolić D, Kržanović N, Nađđerđ L, Davidović VS. Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation. in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings. 2019;:181-184.
doi:10.1109/MIEL.2019.8889613 .

Stanković, Srboljub, Nikolić, Dragana, Kržanović, Nikola, Nađđerđ, Laslo, Davidović, Vojkan S., "Comparison of Radiation Characteristics of HfO2 and SiO2 Incorporated in MOS Capacitor in Field of Gamma and X Radiation" in IEEE : 31st International Conference on Microelectronics (MIEL) : Book of proceedings (2019):181-184,
https://doi.org/10.1109/MIEL.2019.8889613 . .

TY  - CONF
AU  - Ilić, S.
AU  - Jevtić, A.
AU  - Stanković, Srboljub
AU  - Davidović, Vojkan S.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8657
AB  - In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
T1  - Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry
SP  - 67
EP  - 70
DO  - 10.1109/MIEL.2019.8889570
ER  - 

@conference{
author = "Ilić, S. and Jevtić, A. and Stanković, Srboljub and Davidović, Vojkan S.",
year = "2019",
abstract = "In this paper we investigated the feasibility of using a commercial programmable floating-gate MOS transistor (EPAD) as a radiation dosimeter. The results show that EPAD with zero bias have the sensitivity of 9.2 mV/Gy and low fading. EPADs with a higher initial threshold voltage show very good linearity with the radiation dose. After its annealing at 70 °C there is a visible recovery of transfer characteristics due to a parasitic parallel resistive path that occurs during irradiation. Apart from that, the threshold voltage is slightly recovered. The programming time of an EPAD increases with the absorbed dose and depends on gate biasing during irradiation. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings",
title = "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry",
pages = "67-70",
doi = "10.1109/MIEL.2019.8889570"
}

Ilić, S., Jevtić, A., Stanković, S.,& Davidović, V. S.. (2019). Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings
IEEE., 67-70.
https://doi.org/10.1109/MIEL.2019.8889570

Ilić S, Jevtić A, Stanković S, Davidović VS. Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry. in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings. 2019;:67-70.
doi:10.1109/MIEL.2019.8889570 .

Ilić, S., Jevtić, A., Stanković, Srboljub, Davidović, Vojkan S., "Feasibility of applying an electrically programmable floating-gate MOS transistor in radiation dosimetry" in 2019 IEEE 31st International Conference on Microelectronics, MIEL 2019 - Proceedings (2019):67-70,
https://doi.org/10.1109/MIEL.2019.8889570 . .

TY  - CONF
AU  - Spassov, Dentcho
AU  - Paskaleva, Albena
AU  - Davidović, Vojkan S.
AU  - Đorić-Veljković, Snežana M.
AU  - Stanković, Srboljub
AU  - Stojadinović, Ninoslav D.
AU  - Ivanov, Tzvetan E.
AU  - Stanchev, T.
PY  - 2019
UR  - https://ieeexplore.ieee.org/document/8889600/
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8658
AB  - The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.
PB  - IEEE
C3  - 2019 IEEE 31st International Conference on Microelectronics (MIEL)
T1  - Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks
SP  - 59
EP  - 62
DO  - 10.1109/MIEL.2019.8889600
ER  - 

@conference{
author = "Spassov, Dentcho and Paskaleva, Albena and Davidović, Vojkan S. and Đorić-Veljković, Snežana M. and Stanković, Srboljub and Stojadinović, Ninoslav D. and Ivanov, Tzvetan E. and Stanchev, T.",
year = "2019",
abstract = "The effect of γ radiation on the charge trapping and oxide properties of MIS capacitors with nanolaminated RfO2/Ah03 dielectrics are presented. The irradiation with dose of 1 and 10 Mrad generates electron traps thereby substantially enhancing the memory windows of stacks. γ radiation increases the positive oxide charge of the structures, but the effect depends also on the thermal treatment of the stacks. The used doses do not deteriorate the density of interface states, leakage currents and retention characteristics. © 2019 IEEE.",
publisher = "IEEE",
journal = "2019 IEEE 31st International Conference on Microelectronics (MIEL)",
title = "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks",
pages = "59-62",
doi = "10.1109/MIEL.2019.8889600"
}

Spassov, D., Paskaleva, A., Davidović, V. S., Đorić-Veljković, S. M., Stanković, S., Stojadinović, N. D., Ivanov, T. E.,& Stanchev, T.. (2019). Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. in 2019 IEEE 31st International Conference on Microelectronics (MIEL)
IEEE., 59-62.
https://doi.org/10.1109/MIEL.2019.8889600

Spassov D, Paskaleva A, Davidović VS, Đorić-Veljković SM, Stanković S, Stojadinović ND, Ivanov TE, Stanchev T. Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks. in 2019 IEEE 31st International Conference on Microelectronics (MIEL). 2019;:59-62.
doi:10.1109/MIEL.2019.8889600 .

Spassov, Dentcho, Paskaleva, Albena, Davidović, Vojkan S., Đorić-Veljković, Snežana M., Stanković, Srboljub, Stojadinović, Ninoslav D., Ivanov, Tzvetan E., Stanchev, T., "Impact of γ Radiation on Charge Trapping Properties of Nanolaminated HfO2/Al2O3 ALD Stacks" in 2019 IEEE 31st International Conference on Microelectronics (MIEL) (2019):59-62,
https://doi.org/10.1109/MIEL.2019.8889600 . .

TY  - JOUR
AU  - Davidović, Vojkan
AU  - Danković, Danijel
AU  - Golubović, Snežana
AU  - Đorić-Veljković, Snežana
AU  - Manić, Ivica
AU  - Prijić, Zoran
AU  - Prijić, Aneta
AU  - Stojadinović, Ninoslav
AU  - Stanković, Srboljub
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/12131
AB  - In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.
T2  - Facta universitatis - series: Electronics and Energetics
T1  - NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs
VL  - 31
IS  - 3
SP  - 367
EP  - 388
DO  - 10.2298/FUEE1803367D
ER  - 

@article{
author = "Davidović, Vojkan and Danković, Danijel and Golubović, Snežana and Đorić-Veljković, Snežana and Manić, Ivica and Prijić, Zoran and Prijić, Aneta and Stojadinović, Ninoslav and Stanković, Srboljub",
year = "2018",
abstract = "In this paper we provide an overview of instabilities observed in commercial power VDMOSFETs subjected to irradiation, NBT stress, and to consecutive exposure to them. The results have indicated that irradiation of previously NBT stressed devices leads to additional threshold voltage shift, while NBT stress effects in previously irradiated devices depend on the gate bias applied during irradiation and on the total dose received. This points to the importance of the order of applied stresses, indicating that for proper insight into the prediction of device behaviour not only harsh conditions, but also the order of exposure have to be considered. It has also been shown that changes in the densities of oxide trapped charge and interface traps during spontaneous recovery after each of applied stresses can be significant, thus leading to additional instability, even though the threshold voltage seems to remain stable, pointing to the need for clarifying the responsible mechanisms.",
journal = "Facta universitatis - series: Electronics and Energetics",
title = "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs",
volume = "31",
number = "3",
pages = "367-388",
doi = "10.2298/FUEE1803367D"
}

Davidović, V., Danković, D., Golubović, S., Đorić-Veljković, S., Manić, I., Prijić, Z., Prijić, A., Stojadinović, N.,& Stanković, S.. (2018). NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics, 31(3), 367-388.
https://doi.org/10.2298/FUEE1803367D

Davidović V, Danković D, Golubović S, Đorić-Veljković S, Manić I, Prijić Z, Prijić A, Stojadinović N, Stanković S. NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs. in Facta universitatis - series: Electronics and Energetics. 2018;31(3):367-388.
doi:10.2298/FUEE1803367D .

Davidović, Vojkan, Danković, Danijel, Golubović, Snežana, Đorić-Veljković, Snežana, Manić, Ivica, Prijić, Zoran, Prijić, Aneta, Stojadinović, Ninoslav, Stanković, Srboljub, "NBT stress and radiation related degradation and underlying mechanisms in power VDMOSFETs" in Facta universitatis - series: Electronics and Energetics, 31, no. 3 (2018):367-388,
https://doi.org/10.2298/FUEE1803367D . .