TY  - JOUR
AU  - Pejović, Svetlana M.
AU  - Pejović, Milić M.
AU  - Stojanov, Dragan
AU  - Ciraj-Bjelac, Olivera
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/917
AB  - In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed.
T2  - Radiation Protection Dosimetry
T1  - Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy
VL  - 168
IS  - 1
SP  - 33
EP  - 39
DO  - 10.1093/rpd/ncv006
ER  - 

@article{
author = "Pejović, Svetlana M. and Pejović, Milić M. and Stojanov, Dragan and Ciraj-Bjelac, Olivera",
year = "2016",
abstract = "In this paper, the results of pMOS dosemeters sensitivity to X-ray radiation and 28-d fading at room temperature are presented. Two types of dosemeters were used, which differ in gate oxide layer thickness. The sensitivity of pMOS dosemeters with gate oxide layer thickness of 1 A mu m was followed in the dose intervals of 1 to 10 cGy and 10 to 100 cGy, whereas that of 400 nm was in the interval of 10 to 100 cGy. The sensitivity was characterised by the threshold voltage shift, which was determined as a function of absorbed radiation dose and time after irradiation. Linear dependence between threshold voltage shift and absorbed radiation dose was established, as well as that considerable fading occurs during the first few days after irradiation. The mechanisms responsible for threshold voltage shift during irradiation and latter annealing have been also discussed.",
journal = "Radiation Protection Dosimetry",
title = "Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy",
volume = "168",
number = "1",
pages = "33-39",
doi = "10.1093/rpd/ncv006"
}

Pejović, S. M., Pejović, M. M., Stojanov, D.,& Ciraj-Bjelac, O.. (2016). Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy. in Radiation Protection Dosimetry, 168(1), 33-39.
https://doi.org/10.1093/rpd/ncv006

Pejović SM, Pejović MM, Stojanov D, Ciraj-Bjelac O. Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy. in Radiation Protection Dosimetry. 2016;168(1):33-39.
doi:10.1093/rpd/ncv006 .

Pejović, Svetlana M., Pejović, Milić M., Stojanov, Dragan, Ciraj-Bjelac, Olivera, "Sensitivity and fading of pMOS dosemeters irradiated with X-ray radiation doses from 1 to 100 cGy" in Radiation Protection Dosimetry, 168, no. 1 (2016):33-39,
https://doi.org/10.1093/rpd/ncv006 . .

TY  - JOUR
AU  - Pejović, Milić M.
AU  - Pejović, Svetlana M.
AU  - Stojanov, Dragan
AU  - Ciraj-Bjelac, Olivera
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/252
AB  - In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.
T2  - Nuclear technology and radiation protection
T1  - Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine
VL  - 29
IS  - 3
SP  - 179
EP  - 185
DO  - 10.2298/NTRP1403179P
ER  - 

@article{
author = "Pejović, Milić M. and Pejović, Svetlana M. and Stojanov, Dragan and Ciraj-Bjelac, Olivera",
year = "2014",
abstract = "In this paper, the results of radiation sensitive field effect transistors (Al-gate p-channel metal-oxide-semiconductor field effect transistors) sensitivity to gamma and X-ray irradiation are presented. Radiation fields were created using Co-60 source for three dose ranges (0-1 Gy, 0-5 Gy, and 0-50 Gy), as well as X-ray unit of 280 kVp spectrum for a single dose range from 0 to 5 Gy. The sensitivity was characterized by the threshold voltage shift, determined from reader circuit measurements, as a function of absorbed radiation dose. It was shown that for the three dose ranges of gamma radiation, as well as for the X-ray range from 0 Gy to 5 Gy there is approximately a linear dependence between threshold voltage shift Delta V-T and radiation dose D. The application of positive bias of +5 Vat the RADFET gate during irradiation, for these ranges of gamma radiation, also for X-ray dose range, leads to the increase in Delta V-T and also, approximately a linear dependence between Delta V-T and D, is established. Moreover, it was shown that the sensitivity of RADFET is much higher in the case of X-ray irradiation then in the case of gamma-ray irradiation for the same dose range.",
journal = "Nuclear technology and radiation protection",
title = "Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine",
volume = "29",
number = "3",
pages = "179-185",
doi = "10.2298/NTRP1403179P"
}

Pejović, M. M., Pejović, S. M., Stojanov, D.,& Ciraj-Bjelac, O.. (2014). Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine. in Nuclear technology and radiation protection, 29(3), 179-185.
https://doi.org/10.2298/NTRP1403179P

Pejović MM, Pejović SM, Stojanov D, Ciraj-Bjelac O. Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine. in Nuclear technology and radiation protection. 2014;29(3):179-185.
doi:10.2298/NTRP1403179P .

Pejović, Milić M., Pejović, Svetlana M., Stojanov, Dragan, Ciraj-Bjelac, Olivera, "Sensitivity of Radfet for Gamma and X-Ray Doses Used in Medicine" in Nuclear technology and radiation protection, 29, no. 3 (2014):179-185,
https://doi.org/10.2298/NTRP1403179P . .

TY  - JOUR
AU  - Pejovic, Momcilo M.
AU  - Pejović, Svetlana M.
AU  - Dolićanin, Edin C.
AU  - Lazarević, Đorđe R.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4634
AB  - Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.
T2  - Nuclear technology and radiation protection
T1  - Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides
VL  - 26
IS  - 3
SP  - 261
EP  - 265
DO  - 10.2298/NTRP1103261P
ER  - 

@article{
author = "Pejovic, Momcilo M. and Pejović, Svetlana M. and Dolićanin, Edin C. and Lazarević, Đorđe R.",
year = "2011",
abstract = "Gamma-ray irradiation and post-irradiation response at room and elevated temperature have been studied for radiation sensitive pMOS transistors with gate oxide thickness of 100 and 400 nm, respectively. Their response was followed based on the changes in the threshold voltage shift which was estimated on the basis of transfer characteristics in saturation. The presence of radiation-induced fixed oxide traps and switching traps - which lead to a change in the threshold voltage - was estimated from the sub-threshold I-V curves, using the midgap technique. It was shown that fixed oxide traps have a dominant influence on the change in the threshold voltage shift during gamma-ray irradiation and annealing.",
journal = "Nuclear technology and radiation protection",
title = "Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides",
volume = "26",
number = "3",
pages = "261-265",
doi = "10.2298/NTRP1103261P"
}

Pejovic, M. M., Pejović, S. M., Dolićanin, E. C.,& Lazarević, Đ. R.. (2011). Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides. in Nuclear technology and radiation protection, 26(3), 261-265.
https://doi.org/10.2298/NTRP1103261P

Pejovic MM, Pejović SM, Dolićanin EC, Lazarević ĐR. Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides. in Nuclear technology and radiation protection. 2011;26(3):261-265.
doi:10.2298/NTRP1103261P .

Pejovic, Momcilo M., Pejović, Svetlana M., Dolićanin, Edin C., Lazarević, Đorđe R., "Gamma-Ray Irradiation and Post-Irradiation At Room and Elevated Temperature Response of Pmos Dosimeters with Thick Gate Oxides" in Nuclear technology and radiation protection, 26, no. 3 (2011):261-265,
https://doi.org/10.2298/NTRP1103261P . .