TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Zhang, Kun
AU  - Čubrović, Vladimir
AU  - Bibić, Nataša M.
AU  - Rakočević, Zlatko Lj.
PY  - 2018
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7685
AB  - Evolution of the structure of cobalt-silicon films during Xe ions irradiation has been studied and the same is correlated with magnetic properties. The polycrystalline cobalt films were deposited by electron beam evaporation method to a thickness of 50 nm on crystalline silicon (c-Si) and silicon with pre-amorphized surface (a-Si). After deposition the layers were irradiated with 400 keV Xe ions to the fluences in the range of 2-30 x 10(15) ions/cm(2). Structural analysis was done by means of transmission electron microscopy, atomic force microscopy (AFM) and X-ray diffraction (XRD), while the magnetic properties were analyzed by using magneto-optical Kerr effect (MOKE) technique. For the both types of substrate the AFM and XRD results show that after Xe ions irradiation the layers become more rough and the grain size of the crystallites increases; the effects being more evidenced for all fluences for the layers deposited on pre-amorphized Si. The MOKE measurements provided the in-plane azimuthal angular dependence of the hysteresis loops and the change of magnetization with the structural parameters. Although the coercive field is influenced by the surface roughness, in the case of c-Si substrate we found it is much more determined by the size of the crystallites. Additionally, independently on the substrate used the magnetic anisotropy in the Co films disappeared as the Xe ion fluence increased, indicating that the changes of magnetization in both systems occur for similar reasons. (C) 2018 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Xenon-ion irradiation of Co/Si bilayers: Magnetic and structural properties
VL  - 447
SP  - 117
EP  - 124
DO  - 10.1016/j.apsusc.2018.03.215
ER  - 

@article{
author = "Novaković, Mirjana M. and Popović, Maja and Zhang, Kun and Čubrović, Vladimir and Bibić, Nataša M. and Rakočević, Zlatko Lj.",
year = "2018",
abstract = "Evolution of the structure of cobalt-silicon films during Xe ions irradiation has been studied and the same is correlated with magnetic properties. The polycrystalline cobalt films were deposited by electron beam evaporation method to a thickness of 50 nm on crystalline silicon (c-Si) and silicon with pre-amorphized surface (a-Si). After deposition the layers were irradiated with 400 keV Xe ions to the fluences in the range of 2-30 x 10(15) ions/cm(2). Structural analysis was done by means of transmission electron microscopy, atomic force microscopy (AFM) and X-ray diffraction (XRD), while the magnetic properties were analyzed by using magneto-optical Kerr effect (MOKE) technique. For the both types of substrate the AFM and XRD results show that after Xe ions irradiation the layers become more rough and the grain size of the crystallites increases; the effects being more evidenced for all fluences for the layers deposited on pre-amorphized Si. The MOKE measurements provided the in-plane azimuthal angular dependence of the hysteresis loops and the change of magnetization with the structural parameters. Although the coercive field is influenced by the surface roughness, in the case of c-Si substrate we found it is much more determined by the size of the crystallites. Additionally, independently on the substrate used the magnetic anisotropy in the Co films disappeared as the Xe ion fluence increased, indicating that the changes of magnetization in both systems occur for similar reasons. (C) 2018 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Xenon-ion irradiation of Co/Si bilayers: Magnetic and structural properties",
volume = "447",
pages = "117-124",
doi = "10.1016/j.apsusc.2018.03.215"
}

Novaković, M. M., Popović, M., Zhang, K., Čubrović, V., Bibić, N. M.,& Rakočević, Z. Lj.. (2018). Xenon-ion irradiation of Co/Si bilayers: Magnetic and structural properties. in Applied Surface Science, 447, 117-124.
https://doi.org/10.1016/j.apsusc.2018.03.215

Novaković MM, Popović M, Zhang K, Čubrović V, Bibić NM, Rakočević ZL. Xenon-ion irradiation of Co/Si bilayers: Magnetic and structural properties. in Applied Surface Science. 2018;447:117-124.
doi:10.1016/j.apsusc.2018.03.215 .

Novaković, Mirjana M., Popović, Maja, Zhang, Kun, Čubrović, Vladimir, Bibić, Nataša M., Rakočević, Zlatko Lj., "Xenon-ion irradiation of Co/Si bilayers: Magnetic and structural properties" in Applied Surface Science, 447 (2018):117-124,
https://doi.org/10.1016/j.apsusc.2018.03.215 . .

TY  - JOUR
AU  - Popović, Maja
AU  - Novaković, Mirjana M.
AU  - Zhang, Kun
AU  - Mitrić, Miodrag
AU  - Bibić, Nataša M.
AU  - Rakočević, Zlatko Lj.
PY  - 2018
UR  - http://www.doiserbia.nb.rs/Article.aspx?ID=1820-61311803199P
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7905
AB  - Polycrystalline CrN thin films were irradiated with Xe ions. The irradiation-induced modifications on structural and optical properties of the films were investigated. The CrN films were deposited on Si(100) wafers with the thickness of 280 nm, by using DC reactive sputtering. After deposition, the films were implanted at room temperature with 400 keV Xe ions with the fluences of 5-20×1015 ions/cm2. The films were then annealed at 700 °C in vacuum for 2 h. The combination of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) was used for structural analyses, while changes in optical properties were monitored by spectroscopic ellipsometry. We also measured the electrical resistivity of the samples using a four point probe method. RBS analysis reveals that the concentration of Xe in the layers increases with ion fluence reaching the value of around 1.5 at.% for the highest ion dose, at a depth of 73 nm. XRD patterns show that the irradiation results in the decrease of the lattice constant in the range of 0.4160-0.4124 nm. Irradiation also results in the splitting of 200 line indicating the tetragonal distortion of CrN lattice. TEM studies demonstrate that after irradiation the columnar microstructure is partially destroyed within ∼90 nm, introducing a large amount of damage in the CrN layers. Spectroscopic ellipsometry analysis shows that the optical band gap of CrN progressively reduces from 3.47 eV to 2.51 eV with the rise in ion fluence up to 20 1015 ions/cm2. Four point probe measurements of the films indicated that as the Xe ion fluence increases, the electrical resistivity rises from 770 to 1607μ cm. After post-implantation annealing crystalline grains become larger and lattice distortion disappears, which influences optical band gap values and electrical resistivity of CrN. © 2018 University of Novi Sad Faculty of Technology. All rights reserved.
T2  - Processing and Application of Ceramics
T1  - Correlation between damage evolution, structural and optical properties of Xe implanted CrN thin films
VL  - 12
IS  - 3
SP  - 199
EP  - 208
DO  - 10.2298/PAC1803199P
ER  - 

@article{
author = "Popović, Maja and Novaković, Mirjana M. and Zhang, Kun and Mitrić, Miodrag and Bibić, Nataša M. and Rakočević, Zlatko Lj.",
year = "2018",
abstract = "Polycrystalline CrN thin films were irradiated with Xe ions. The irradiation-induced modifications on structural and optical properties of the films were investigated. The CrN films were deposited on Si(100) wafers with the thickness of 280 nm, by using DC reactive sputtering. After deposition, the films were implanted at room temperature with 400 keV Xe ions with the fluences of 5-20×1015 ions/cm2. The films were then annealed at 700 °C in vacuum for 2 h. The combination of Rutherford backscattering spectrometry (RBS), X-ray diffraction (XRD) and transmission electron microscopy (TEM) was used for structural analyses, while changes in optical properties were monitored by spectroscopic ellipsometry. We also measured the electrical resistivity of the samples using a four point probe method. RBS analysis reveals that the concentration of Xe in the layers increases with ion fluence reaching the value of around 1.5 at.% for the highest ion dose, at a depth of 73 nm. XRD patterns show that the irradiation results in the decrease of the lattice constant in the range of 0.4160-0.4124 nm. Irradiation also results in the splitting of 200 line indicating the tetragonal distortion of CrN lattice. TEM studies demonstrate that after irradiation the columnar microstructure is partially destroyed within ∼90 nm, introducing a large amount of damage in the CrN layers. Spectroscopic ellipsometry analysis shows that the optical band gap of CrN progressively reduces from 3.47 eV to 2.51 eV with the rise in ion fluence up to 20 1015 ions/cm2. Four point probe measurements of the films indicated that as the Xe ion fluence increases, the electrical resistivity rises from 770 to 1607μ cm. After post-implantation annealing crystalline grains become larger and lattice distortion disappears, which influences optical band gap values and electrical resistivity of CrN. © 2018 University of Novi Sad Faculty of Technology. All rights reserved.",
journal = "Processing and Application of Ceramics",
title = "Correlation between damage evolution, structural and optical properties of Xe implanted CrN thin films",
volume = "12",
number = "3",
pages = "199-208",
doi = "10.2298/PAC1803199P"
}

Popović, M., Novaković, M. M., Zhang, K., Mitrić, M., Bibić, N. M.,& Rakočević, Z. Lj.. (2018). Correlation between damage evolution, structural and optical properties of Xe implanted CrN thin films. in Processing and Application of Ceramics, 12(3), 199-208.
https://doi.org/10.2298/PAC1803199P

Popović M, Novaković MM, Zhang K, Mitrić M, Bibić NM, Rakočević ZL. Correlation between damage evolution, structural and optical properties of Xe implanted CrN thin films. in Processing and Application of Ceramics. 2018;12(3):199-208.
doi:10.2298/PAC1803199P .

Popović, Maja, Novaković, Mirjana M., Zhang, Kun, Mitrić, Miodrag, Bibić, Nataša M., Rakočević, Zlatko Lj., "Correlation between damage evolution, structural and optical properties of Xe implanted CrN thin films" in Processing and Application of Ceramics, 12, no. 3 (2018):199-208,
https://doi.org/10.2298/PAC1803199P . .

TY  - JOUR
AU  - Popović, Maja
AU  - Novaković, Mirjana M.
AU  - Mitrić, Miodrag
AU  - Zhang, Kun
AU  - Rakočević, Zlatko Lj.
AU  - Bibić, Nataša M.
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1577
AB  - The present study deals with irradiation effects induced by xenon ions (Xe+ on titanium nitride (TiN) thin films. TiN films thickness of 260 urn obtained by using dc reactive sputtering were irradiated with 400 keV Xe ions. The irradiation doses were 5 x 10(15), 10 x 10(15), 15 x 10(15) and 20 x 10(15) ions/cm(2). The properties of irradiated films varying with ion fluence are investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and spectroscopic ellipsometry. It was found that the Xe ions induce contraction and rhombohedral distortion of TiN lattice. The columnar structure was partially destroyed after irradiation, which introduce up to 1.5 at.% of Xe within the structure mostly concentrated around the projected ion range. The generation of defects due to the presence of heavy ions changes the optical constants of implanted films. It was found that the optical band gap of TiN films was reduced after xenon ion implantation. (C) 2017 Elsevier Ltd. All rights reserved.
T2  - Materials Research Bulletin
T1  - Xenon implantation effects on the structural and optical properties of reactively sputtered titanium nitride thin films
VL  - 91
SP  - 36
EP  - 41
DO  - 10.1016/j.materresbull.2017.03.031
ER  - 

@article{
author = "Popović, Maja and Novaković, Mirjana M. and Mitrić, Miodrag and Zhang, Kun and Rakočević, Zlatko Lj. and Bibić, Nataša M.",
year = "2017",
abstract = "The present study deals with irradiation effects induced by xenon ions (Xe+ on titanium nitride (TiN) thin films. TiN films thickness of 260 urn obtained by using dc reactive sputtering were irradiated with 400 keV Xe ions. The irradiation doses were 5 x 10(15), 10 x 10(15), 15 x 10(15) and 20 x 10(15) ions/cm(2). The properties of irradiated films varying with ion fluence are investigated by means of Rutherford backscattering spectrometry, X-ray diffraction, transmission electron microscopy and spectroscopic ellipsometry. It was found that the Xe ions induce contraction and rhombohedral distortion of TiN lattice. The columnar structure was partially destroyed after irradiation, which introduce up to 1.5 at.% of Xe within the structure mostly concentrated around the projected ion range. The generation of defects due to the presence of heavy ions changes the optical constants of implanted films. It was found that the optical band gap of TiN films was reduced after xenon ion implantation. (C) 2017 Elsevier Ltd. All rights reserved.",
journal = "Materials Research Bulletin",
title = "Xenon implantation effects on the structural and optical properties of reactively sputtered titanium nitride thin films",
volume = "91",
pages = "36-41",
doi = "10.1016/j.materresbull.2017.03.031"
}

Popović, M., Novaković, M. M., Mitrić, M., Zhang, K., Rakočević, Z. Lj.,& Bibić, N. M.. (2017). Xenon implantation effects on the structural and optical properties of reactively sputtered titanium nitride thin films. in Materials Research Bulletin, 91, 36-41.
https://doi.org/10.1016/j.materresbull.2017.03.031

Popović M, Novaković MM, Mitrić M, Zhang K, Rakočević ZL, Bibić NM. Xenon implantation effects on the structural and optical properties of reactively sputtered titanium nitride thin films. in Materials Research Bulletin. 2017;91:36-41.
doi:10.1016/j.materresbull.2017.03.031 .

Popović, Maja, Novaković, Mirjana M., Mitrić, Miodrag, Zhang, Kun, Rakočević, Zlatko Lj., Bibić, Nataša M., "Xenon implantation effects on the structural and optical properties of reactively sputtered titanium nitride thin films" in Materials Research Bulletin, 91 (2017):36-41,
https://doi.org/10.1016/j.materresbull.2017.03.031 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Zhang, Kun
AU  - Rakočević, Zlatko Lj.
AU  - Bibić, Nataša M.
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1350
AB  - Modification in structural and optical properties of chromium-nitride (CrN) films induced by argon ion irradiation and thermal annealings were investigated using various experimental techniques. CrN films deposited by d.c. reactive sputtering on Si substrate were implanted with 200 keV argon ions, at fluences of 5-20 x 10(15) ions/cm(2). As-implanted samples were then annealed in vacuum, for 2 h at 700 degrees C. Rutherford backscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy and spectroscopic ellipsometry (SE) measurements were carried out in order to study structural and optical properties of the layers. After irradiation with 200 keV Ar ions a damaged surface layer of nanocrystalline structure was generated, which extended beyond the implantation profile, but left an undamaged bottom zone. Partial loss of columnar structure observed in implanted samples was recovered after annealing at 700 degrees C and CrN started to decompose to Cr2N. This layer geometry determined from transmission electron microscopy was inferred in the analysis of SE data using the combined Drude and Tauc-Lorentz model, and the variation of the optical bandgap was deduced. The results are discussed on the basis of the changes induced in the microstructure. It was found that the optical properties of the layers are strongly dependent on the defects concentration of CrN. (C) 2016 Elsevier B.V. All rights reserved.
T2  - Optical Materials
T1  - Effects of 200 keV Ar-ions irradiation on the structural and optical properties of reactively sputtered CrN films
VL  - 62
SP  - 57
EP  - 63
DO  - 10.1016/j.optmat.2016.09.047
ER  - 

@article{
author = "Novaković, Mirjana M. and Popović, Maja and Zhang, Kun and Rakočević, Zlatko Lj. and Bibić, Nataša M.",
year = "2016",
abstract = "Modification in structural and optical properties of chromium-nitride (CrN) films induced by argon ion irradiation and thermal annealings were investigated using various experimental techniques. CrN films deposited by d.c. reactive sputtering on Si substrate were implanted with 200 keV argon ions, at fluences of 5-20 x 10(15) ions/cm(2). As-implanted samples were then annealed in vacuum, for 2 h at 700 degrees C. Rutherford backscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy and spectroscopic ellipsometry (SE) measurements were carried out in order to study structural and optical properties of the layers. After irradiation with 200 keV Ar ions a damaged surface layer of nanocrystalline structure was generated, which extended beyond the implantation profile, but left an undamaged bottom zone. Partial loss of columnar structure observed in implanted samples was recovered after annealing at 700 degrees C and CrN started to decompose to Cr2N. This layer geometry determined from transmission electron microscopy was inferred in the analysis of SE data using the combined Drude and Tauc-Lorentz model, and the variation of the optical bandgap was deduced. The results are discussed on the basis of the changes induced in the microstructure. It was found that the optical properties of the layers are strongly dependent on the defects concentration of CrN. (C) 2016 Elsevier B.V. All rights reserved.",
journal = "Optical Materials",
title = "Effects of 200 keV Ar-ions irradiation on the structural and optical properties of reactively sputtered CrN films",
volume = "62",
pages = "57-63",
doi = "10.1016/j.optmat.2016.09.047"
}

Novaković, M. M., Popović, M., Zhang, K., Rakočević, Z. Lj.,& Bibić, N. M.. (2016). Effects of 200 keV Ar-ions irradiation on the structural and optical properties of reactively sputtered CrN films. in Optical Materials, 62, 57-63.
https://doi.org/10.1016/j.optmat.2016.09.047

Novaković MM, Popović M, Zhang K, Rakočević ZL, Bibić NM. Effects of 200 keV Ar-ions irradiation on the structural and optical properties of reactively sputtered CrN films. in Optical Materials. 2016;62:57-63.
doi:10.1016/j.optmat.2016.09.047 .

Novaković, Mirjana M., Popović, Maja, Zhang, Kun, Rakočević, Zlatko Lj., Bibić, Nataša M., "Effects of 200 keV Ar-ions irradiation on the structural and optical properties of reactively sputtered CrN films" in Optical Materials, 62 (2016):57-63,
https://doi.org/10.1016/j.optmat.2016.09.047 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Zhang, Kun
AU  - Mitrić, Miodrag
AU  - Bibić, Nataša M.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/691
AB  - Reactively sputtered CrN layer, deposited on Si(100) wafer, was implanted at room temperature with 80-keV V+. ions to the fluence of 2 x 10(17) ions/cm(2). After implantation the sample was annealed in a vacuum, for 2 h at 700 degrees C. The microstructure and chemical composition of CrN films was investigated using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy (conventional and high-resolution), together with fast Fourier transformation analyses. It was found that vanadium atoms are distributed in the sub-surface region of CrN layer, with the maximum concentration at similar to 20 nm. After annealing the formation of VN nanoparticles was observed. The nanoparticles are spherical shaped with a size of 8-20 nm in diameter. (C) 2015 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Irradiation induced formation of VN in CrN thin films
VL  - 358
SP  - 206
EP  - 209
DO  - 10.1016/j.nimb.2015.06.036
ER  - 

@article{
author = "Novaković, Mirjana M. and Popović, Maja and Zhang, Kun and Mitrić, Miodrag and Bibić, Nataša M.",
year = "2015",
abstract = "Reactively sputtered CrN layer, deposited on Si(100) wafer, was implanted at room temperature with 80-keV V+. ions to the fluence of 2 x 10(17) ions/cm(2). After implantation the sample was annealed in a vacuum, for 2 h at 700 degrees C. The microstructure and chemical composition of CrN films was investigated using Rutherford backscattering spectroscopy, X-ray photoelectron spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy (conventional and high-resolution), together with fast Fourier transformation analyses. It was found that vanadium atoms are distributed in the sub-surface region of CrN layer, with the maximum concentration at similar to 20 nm. After annealing the formation of VN nanoparticles was observed. The nanoparticles are spherical shaped with a size of 8-20 nm in diameter. (C) 2015 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Irradiation induced formation of VN in CrN thin films",
volume = "358",
pages = "206-209",
doi = "10.1016/j.nimb.2015.06.036"
}

Novaković, M. M., Popović, M., Zhang, K., Mitrić, M.,& Bibić, N. M.. (2015). Irradiation induced formation of VN in CrN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 358, 206-209.
https://doi.org/10.1016/j.nimb.2015.06.036

Novaković MM, Popović M, Zhang K, Mitrić M, Bibić NM. Irradiation induced formation of VN in CrN thin films. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2015;358:206-209.
doi:10.1016/j.nimb.2015.06.036 .

Novaković, Mirjana M., Popović, Maja, Zhang, Kun, Mitrić, Miodrag, Bibić, Nataša M., "Irradiation induced formation of VN in CrN thin films" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 358 (2015):206-209,
https://doi.org/10.1016/j.nimb.2015.06.036 . .

TY  - JOUR
AU  - Popović, Maja
AU  - Novaković, Mirjana M.
AU  - Mitrić, Miodrag
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/344
AB  - Modification in structural, optical and electrical properties of titanium nitride (TiN) thin films induced by argon ion irradiation and thermal annealings was studied using various experimental techniques. TiN thin films deposited by dc reactive sputtering on Si substrate were implanted with argon ions at 200 key. As-implanted samples were annealed before or after ion irradiation at 600 degrees C and 700 degrees C, respectively. Rutherford bacicscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy, spectroscopic ellipsometry and electrical measurements were carried out in order to study structural, optical and electrical properties of TiN/Si samples. After irradiation with 200 keV Ar ions the columnar microstructure of TiN was changed and the presence of smaller crystalline grains was observed. Partial Loss of columnar structure observed in implanted samples was completely recovered after annealing at 700 degrees C. Observed changes in microstructure induced by ion irradiation and annealings were correlated with the variation in optical parameters obtained by spectroscopic ellipsometry. It was found that both refractive index and extinction coefficient are strongly dependent on the defects concentration and size of the crystalline grains in TiN layers. (C) 2014 Elsevier Ltd. All rights reserved.
T2  - International Journal of Refractory Metals and Hard Materials
T1  - Structural, optical and electrical properties of argon implanted TiN thin films
VL  - 48
SP  - 318
EP  - 323
DO  - 10.1016/j.ijrmhm.2014.09.026
ER  - 

@article{
author = "Popović, Maja and Novaković, Mirjana M. and Mitrić, Miodrag and Zhang, Kun and Bibić, Nataša M.",
year = "2015",
abstract = "Modification in structural, optical and electrical properties of titanium nitride (TiN) thin films induced by argon ion irradiation and thermal annealings was studied using various experimental techniques. TiN thin films deposited by dc reactive sputtering on Si substrate were implanted with argon ions at 200 key. As-implanted samples were annealed before or after ion irradiation at 600 degrees C and 700 degrees C, respectively. Rutherford bacicscattering spectrometry, X-ray diffraction, cross-sectional (high-resolution) transmission electron microscopy, spectroscopic ellipsometry and electrical measurements were carried out in order to study structural, optical and electrical properties of TiN/Si samples. After irradiation with 200 keV Ar ions the columnar microstructure of TiN was changed and the presence of smaller crystalline grains was observed. Partial Loss of columnar structure observed in implanted samples was completely recovered after annealing at 700 degrees C. Observed changes in microstructure induced by ion irradiation and annealings were correlated with the variation in optical parameters obtained by spectroscopic ellipsometry. It was found that both refractive index and extinction coefficient are strongly dependent on the defects concentration and size of the crystalline grains in TiN layers. (C) 2014 Elsevier Ltd. All rights reserved.",
journal = "International Journal of Refractory Metals and Hard Materials",
title = "Structural, optical and electrical properties of argon implanted TiN thin films",
volume = "48",
pages = "318-323",
doi = "10.1016/j.ijrmhm.2014.09.026"
}

Popović, M., Novaković, M. M., Mitrić, M., Zhang, K.,& Bibić, N. M.. (2015). Structural, optical and electrical properties of argon implanted TiN thin films. in International Journal of Refractory Metals and Hard Materials, 48, 318-323.
https://doi.org/10.1016/j.ijrmhm.2014.09.026

Popović M, Novaković MM, Mitrić M, Zhang K, Bibić NM. Structural, optical and electrical properties of argon implanted TiN thin films. in International Journal of Refractory Metals and Hard Materials. 2015;48:318-323.
doi:10.1016/j.ijrmhm.2014.09.026 .

Popović, Maja, Novaković, Mirjana M., Mitrić, Miodrag, Zhang, Kun, Bibić, Nataša M., "Structural, optical and electrical properties of argon implanted TiN thin films" in International Journal of Refractory Metals and Hard Materials, 48 (2015):318-323,
https://doi.org/10.1016/j.ijrmhm.2014.09.026 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Popović, Maja
AU  - Zhang, Kun
AU  - Lieb, K. P.
AU  - Bibić, Nataša M.
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5890
AB  - The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved.
T2  - Applied Surface Science
T1  - Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing
VL  - 295
SP  - 158
EP  - 163
DO  - 10.1016/j.apsusc.2014.01.020
ER  - 

@article{
author = "Novaković, Mirjana M. and Popović, Maja and Zhang, Kun and Lieb, K. P. and Bibić, Nataša M.",
year = "2014",
abstract = "The effect of the interface in cobalt-silicon bilayers on the silicide phase formation and microstructure has been investigated. Thin cobalt films were deposited by electron beam evaporation to a thickness of 50 nm on crystalline silicon (c-Si) or silicon with pre-amorphized surface (a-Si). After deposition one set of samples was annealed for 2 h at 200, 300, 400, 500, 600 and 700 degrees C. Another set of samples was irradiated with 400 keV Xe+ ions and then annealed at the same temperatures. Phase transitions were investigated with Rutherford backscattering spectroscopy, X-ray diffraction and cross-sectional transmission electron microscopy. No silicide formation was observed up to 400 degrees C, for both non-irradiated and ion-irradiated samples. When increasing the annealing temperature, the non-irradiated and irradiated Co/c-Si samples showed a similar behaviour: at 500 degrees C, CoSi appeared as the dominant silicide, followed by the formation of CoSi2 at 600 and 700 degrees C. In the case of non-irradiated Co/a-Si samples, no silicide formation occurred up to 700 degrees C, while irradiated samples with pre-amorphized substrate (Co/a-Si) showed a phase sequence similar to that in the Co/c-Si system. The observed phase transitions are found to be consistent with predictions of the effective heat of formation model. (C) 2014 Elsevier B. V. All rights reserved.",
journal = "Applied Surface Science",
title = "Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing",
volume = "295",
pages = "158-163",
doi = "10.1016/j.apsusc.2014.01.020"
}

Novaković, M. M., Popović, M., Zhang, K., Lieb, K. P.,& Bibić, N. M.. (2014). Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing. in Applied Surface Science, 295, 158-163.
https://doi.org/10.1016/j.apsusc.2014.01.020

Novaković MM, Popović M, Zhang K, Lieb KP, Bibić NM. Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing. in Applied Surface Science. 2014;295:158-163.
doi:10.1016/j.apsusc.2014.01.020 .

Novaković, Mirjana M., Popović, Maja, Zhang, Kun, Lieb, K. P., Bibić, Nataša M., "Silicide phases formation in Co/c-Si and Co/a-Si systems during thermal annealing" in Applied Surface Science, 295 (2014):158-163,
https://doi.org/10.1016/j.apsusc.2014.01.020 . .

TY  - JOUR
AU  - Popović, Maja
AU  - Novaković, Mirjana M.
AU  - Traverse, A.
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
AU  - Hofsaess, H.
AU  - Lieb, K. P.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5385
AB  - Polycrystalline titaniumnitride (TiN) layers of 240 nmthickness and columnar microstructure were deposited at 150 degrees C by d. c. reactive sputtering on Si(100) wafers and then irradiated at roomtemperature with either 80 keV V+ ions (at fluences of up to 2x10(17) ions/cm(2)) or 200 keV Ar+ ions (at fluences of 5x10(15)-2x10(16) ions/cm(2)). Rutherford backscattering spectroscopy, cross-sectional (high-resolution) transmission electron microscopy and X-ray diffraction were used to characterize ion-induced changes in the structural properties of the films. Their optical and electric properties were analyzed by infrared reflectance (IR) and electric resistivity measurements. After deposition, the stoichiometric TiN films had a (111) texture. Ion implantation generated a damaged surface layer of nanocrystalline structure, which extended beyond the implantation profile, but left an undamaged bottom zone of (111) orientation. This layer geometry determined from transmission electron microscopy was inferred in the analysis of IR reflectance data using the Drude model, and the variation of the electric and optical resistivity with the irradiation was deduced. The results were compared to those recently gained for ion-implanted reactively sputtered chromium nitride films. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties
VL  - 531
SP  - 189
EP  - 196
DO  - 10.1016/j.tsf.2013.01.045
ER  - 

@article{
author = "Popović, Maja and Novaković, Mirjana M. and Traverse, A. and Zhang, Kun and Bibić, Nataša M. and Hofsaess, H. and Lieb, K. P.",
year = "2013",
abstract = "Polycrystalline titaniumnitride (TiN) layers of 240 nmthickness and columnar microstructure were deposited at 150 degrees C by d. c. reactive sputtering on Si(100) wafers and then irradiated at roomtemperature with either 80 keV V+ ions (at fluences of up to 2x10(17) ions/cm(2)) or 200 keV Ar+ ions (at fluences of 5x10(15)-2x10(16) ions/cm(2)). Rutherford backscattering spectroscopy, cross-sectional (high-resolution) transmission electron microscopy and X-ray diffraction were used to characterize ion-induced changes in the structural properties of the films. Their optical and electric properties were analyzed by infrared reflectance (IR) and electric resistivity measurements. After deposition, the stoichiometric TiN films had a (111) texture. Ion implantation generated a damaged surface layer of nanocrystalline structure, which extended beyond the implantation profile, but left an undamaged bottom zone of (111) orientation. This layer geometry determined from transmission electron microscopy was inferred in the analysis of IR reflectance data using the Drude model, and the variation of the electric and optical resistivity with the irradiation was deduced. The results were compared to those recently gained for ion-implanted reactively sputtered chromium nitride films. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties",
volume = "531",
pages = "189-196",
doi = "10.1016/j.tsf.2013.01.045"
}

Popović, M., Novaković, M. M., Traverse, A., Zhang, K., Bibić, N. M., Hofsaess, H.,& Lieb, K. P.. (2013). Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties. in Thin Solid Films, 531, 189-196.
https://doi.org/10.1016/j.tsf.2013.01.045

Popović M, Novaković MM, Traverse A, Zhang K, Bibić NM, Hofsaess H, Lieb KP. Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties. in Thin Solid Films. 2013;531:189-196.
doi:10.1016/j.tsf.2013.01.045 .

Popović, Maja, Novaković, Mirjana M., Traverse, A., Zhang, Kun, Bibić, Nataša M., Hofsaess, H., Lieb, K. P., "Modifications of reactively sputtered titanium nitride films by argon and vanadium ion implantation: Microstructural and opto-electric properties" in Thin Solid Films, 531 (2013):189-196,
https://doi.org/10.1016/j.tsf.2013.01.045 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Traverse, A.
AU  - Popović, Maja
AU  - Lieb, K. P.
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6964
AB  - We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150 degrees C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1 x 10(17) and 2 x 10(17) ions/cm(2). Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-xVxN.
T2  - Radiation Effects and Defects in Solids
T1  - Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions
VL  - 167
IS  - 7
SP  - 496
EP  - 505
DO  - 10.1080/10420150.2012.656639
ER  - 

@article{
author = "Novaković, Mirjana M. and Traverse, A. and Popović, Maja and Lieb, K. P. and Zhang, Kun and Bibić, Nataša M.",
year = "2012",
abstract = "We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150 degrees C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1 x 10(17) and 2 x 10(17) ions/cm(2). Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-xVxN.",
journal = "Radiation Effects and Defects in Solids",
title = "Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions",
volume = "167",
number = "7",
pages = "496-505",
doi = "10.1080/10420150.2012.656639"
}

Novaković, M. M., Traverse, A., Popović, M., Lieb, K. P., Zhang, K.,& Bibić, N. M.. (2012). Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions. in Radiation Effects and Defects in Solids, 167(7), 496-505.
https://doi.org/10.1080/10420150.2012.656639

Novaković MM, Traverse A, Popović M, Lieb KP, Zhang K, Bibić NM. Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions. in Radiation Effects and Defects in Solids. 2012;167(7):496-505.
doi:10.1080/10420150.2012.656639 .

Novaković, Mirjana M., Traverse, A., Popović, Maja, Lieb, K. P., Zhang, Kun, Bibić, Nataša M., "Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions" in Radiation Effects and Defects in Solids, 167, no. 7 (2012):496-505,
https://doi.org/10.1080/10420150.2012.656639 . .

TY  - JOUR
AU  - Novaković, Mirjana M.
AU  - Zhang, Kun
AU  - Popović, Maja
AU  - Bibić, Nataša M.
AU  - Hofsaess, H.
AU  - Lieb, K. P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4301
AB  - Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-key Xe(+) ions at fluences of up to 3 x 10(16) cm(-2). We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 degrees C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Delta sigma(2)/Phi = 3.0(4) nm(4), is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 degrees C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co(2)Si - GT CoSi - GT CoSi(2). (C) 2010 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay
VL  - 269
IS  - 9
SP  - 881
EP  - 885
DO  - 10.1016/j.nimb.2010.12.077
ER  - 

@article{
author = "Novaković, Mirjana M. and Zhang, Kun and Popović, Maja and Bibić, Nataša M. and Hofsaess, H. and Lieb, K. P.",
year = "2011",
abstract = "Studies on ion-irradiated transition-metal/silicon bilayers demonstrate that interface mixing and silicide phase formation depend sensitively on the ion and film parameters, including the structure of the metal/Si interface. Thin Co layers e-gun evaporated to a thickness of 50 nm on Si(1 0 0) wafers were bombarded at room temperature with 400-key Xe(+) ions at fluences of up to 3 x 10(16) cm(-2). We used either crystalline or pre-amorphized Si wafers the latter ones prepared by 1.0-keV Ar-ion implantation. The as-deposited or Xe-ion-irradiated samples were then isochronally annealed at temperatures up to 700 degrees C. Changes of the bilayer structures induced by ion irradiation and/or annealing were investigated with RBS, XRD and HRTEM. The mixing rate for the Co/c-Si couples, Delta sigma(2)/Phi = 3.0(4) nm(4), is higher than the value expected for ballistic mixing and about half the value typical for spike mixing. Mixing of pre-amorphized Si is much weaker relative to crystalline Si wafers, contrary to previous results obtained for Fe/Si bilayers. Annealing of irradiated samples produces very similar interdiffusion and phase formation patterns above 400 degrees C as in the non-irradiated Co/Si bilayers: the phase evolution follows the sequence Co(2)Si - GT CoSi - GT CoSi(2). (C) 2010 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay",
volume = "269",
number = "9",
pages = "881-885",
doi = "10.1016/j.nimb.2010.12.077"
}

Novaković, M. M., Zhang, K., Popović, M., Bibić, N. M., Hofsaess, H.,& Lieb, K. P.. (2011). Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(9), 881-885.
https://doi.org/10.1016/j.nimb.2010.12.077

Novaković MM, Zhang K, Popović M, Bibić NM, Hofsaess H, Lieb KP. Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(9):881-885.
doi:10.1016/j.nimb.2010.12.077 .

Novaković, Mirjana M., Zhang, Kun, Popović, Maja, Bibić, Nataša M., Hofsaess, H., Lieb, K. P., "Xenon-ion-induced and thermal mixing of Co/Si bilayers and their interplay" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 9 (2011):881-885,
https://doi.org/10.1016/j.nimb.2010.12.077 . .

TY  - JOUR
AU  - Bibić, Nataša M.
AU  - Lieb, K. P.
AU  - Milinović, Velimir
AU  - Mitrić, Miodrag
AU  - Šiljegović, Milorad
AU  - Zhang, Kun
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6767
AB  - Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy
VL  - 266
IS  - 10
SP  - 2498
EP  - 2502
DO  - 10.1016/j.nimb.2008.03.033
ER  - 

@article{
author = "Bibić, Nataša M. and Lieb, K. P. and Milinović, Velimir and Mitrić, Miodrag and Šiljegović, Milorad and Zhang, Kun",
year = "2008",
abstract = "Heavy-ion irradiation of ferromagnetic thin layers changes their micromagnetic and microstructural properties, due to the production of defects, relaxation or build-up of stress, or changes of grain size. When the ion range exceeds the layer thickness, ion mixing processes take place, leading to the formation of silicide phases. The present study deals with CO(30 or 55 nm)/Si bilayers irradiated at room temperature with 100- or 200 keV Xe ions to fluences of up to 15 x 10(15)/cm(2). The Si(100) wafers were either crystalline or pre-amorphized by 1 keV Ar+ implantation. Rutherford backscattering spectroscopy, in-plane magneto-optical Kerr effect, and X-ray diffraction served to analyse the samples before and after irradiation. The results will be compared with those obtained for other heavy-ions for Co/Si bilayers and in similar studies on Fe/Si bilayers. (C) 2008 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy",
volume = "266",
number = "10",
pages = "2498-2502",
doi = "10.1016/j.nimb.2008.03.033"
}

Bibić, N. M., Lieb, K. P., Milinović, V., Mitrić, M., Šiljegović, M.,& Zhang, K.. (2008). Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266(10), 2498-2502.
https://doi.org/10.1016/j.nimb.2008.03.033

Bibić NM, Lieb KP, Milinović V, Mitrić M, Šiljegović M, Zhang K. Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2008;266(10):2498-2502.
doi:10.1016/j.nimb.2008.03.033 .

Bibić, Nataša M., Lieb, K. P., Milinović, Velimir, Mitrić, Miodrag, Šiljegović, Milorad, Zhang, Kun, "Xenon-ion irradiation of Co/Si bilayers: Effects of interface structure and ion energy" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 266, no. 10 (2008):2498-2502,
https://doi.org/10.1016/j.nimb.2008.03.033 . .

TY  - JOUR
AU  - Zhang, Kun
AU  - Lieb, K. P.
AU  - Bibić, Nataša M.
AU  - Pilet, N.
AU  - Ashworth, T. V.
AU  - Marioni, M. A.
AU  - Hug, H. J.
PY  - 2008
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/3406
AB  - Polycrystalline nickel layers, deposited on Si( 1 1 0) wafers via electron beam evaporation to a thickness of 29 or 68 - 70 nm, were thermally annealed in vacuo at 493 or 530 K. The elemental interdiffusion across the Ni/Si interface was measured by means of Rutherford backscattering spectroscopy, and the relaxation of stress and grain growth by means of x-ray diffraction. At 530 K, a slight logarithmic increase in the interface variance with the annealing time, but no crystalline silicide formation was observed. The in-plane magneto-optical Kerr effect and magnetic force microscopy were used to investigate the changes in the magnetic properties. With increasing annealing time, the decrease in coercivity and gain in magnetic remanence were correlated with the relaxation of stress. Similarities with ion-irradiated Ni/Si couples will be discussed.
T2  - Journal of Physics. D: Applied Physics
T1  - Microstructural and magnetic properties of thermally mixed Ni/Si bilayers
VL  - 41
IS  - 9
DO  - 10.1088/0022-3727/41/9/095003
ER  - 

@article{
author = "Zhang, Kun and Lieb, K. P. and Bibić, Nataša M. and Pilet, N. and Ashworth, T. V. and Marioni, M. A. and Hug, H. J.",
year = "2008",
abstract = "Polycrystalline nickel layers, deposited on Si( 1 1 0) wafers via electron beam evaporation to a thickness of 29 or 68 - 70 nm, were thermally annealed in vacuo at 493 or 530 K. The elemental interdiffusion across the Ni/Si interface was measured by means of Rutherford backscattering spectroscopy, and the relaxation of stress and grain growth by means of x-ray diffraction. At 530 K, a slight logarithmic increase in the interface variance with the annealing time, but no crystalline silicide formation was observed. The in-plane magneto-optical Kerr effect and magnetic force microscopy were used to investigate the changes in the magnetic properties. With increasing annealing time, the decrease in coercivity and gain in magnetic remanence were correlated with the relaxation of stress. Similarities with ion-irradiated Ni/Si couples will be discussed.",
journal = "Journal of Physics. D: Applied Physics",
title = "Microstructural and magnetic properties of thermally mixed Ni/Si bilayers",
volume = "41",
number = "9",
doi = "10.1088/0022-3727/41/9/095003"
}

Zhang, K., Lieb, K. P., Bibić, N. M., Pilet, N., Ashworth, T. V., Marioni, M. A.,& Hug, H. J.. (2008). Microstructural and magnetic properties of thermally mixed Ni/Si bilayers. in Journal of Physics. D: Applied Physics, 41(9).
https://doi.org/10.1088/0022-3727/41/9/095003

Zhang K, Lieb KP, Bibić NM, Pilet N, Ashworth TV, Marioni MA, Hug HJ. Microstructural and magnetic properties of thermally mixed Ni/Si bilayers. in Journal of Physics. D: Applied Physics. 2008;41(9).
doi:10.1088/0022-3727/41/9/095003 .

Zhang, Kun, Lieb, K. P., Bibić, Nataša M., Pilet, N., Ashworth, T. V., Marioni, M. A., Hug, H. J., "Microstructural and magnetic properties of thermally mixed Ni/Si bilayers" in Journal of Physics. D: Applied Physics, 41, no. 9 (2008),
https://doi.org/10.1088/0022-3727/41/9/095003 . .

TY  - CONF
AU  - Milinović, Velimir
AU  - Zhang, Kun
AU  - Bibić, Nataša M.
AU  - Leib, K. P.
AU  - Milosavljević, Momir
AU  - Sahoo, P. K.
PY  - 2006
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6644
AB  - Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a-Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75 +/- 0.15 was observed relative to Fe/c-Si. For electronic stopping, the enhancement is 3.21 +/- 0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a-Si relative to c-Si, which prolongates the relaxation phase of the ion-induced thermal spikes.
C3  - AIP Conference Proceedings
T1  - Ion beam mixing at crystalline and amorphous Fe/Si interfaces
VL  - 876
SP  - 209
EP  - +
UR  - https://hdl.handle.net/21.15107/rcub_vinar_6644
ER  - 

@conference{
author = "Milinović, Velimir and Zhang, Kun and Bibić, Nataša M. and Leib, K. P. and Milosavljević, Momir and Sahoo, P. K.",
year = "2006",
abstract = "Ion beam irradiation of a-Si/Fe/c-Si trilayers with 350-MeV Au ions and of Fe/a-Si bilayers with 250-keV Xe ions were carried out in order to measure the interface mixing rates and microstructure, phase formation, and magnetic polarization in the regimes of electronic and nuclear stopping. For Fe/a-Si and nuclear stopping, an enhancement of the interface mixing rate of 1.75 +/- 0.15 was observed relative to Fe/c-Si. For electronic stopping, the enhancement is 3.21 +/- 0.34. A plausible explanation of this enhancement lies in the much smaller thermal conductivity in a-Si relative to c-Si, which prolongates the relaxation phase of the ion-induced thermal spikes.",
journal = "AIP Conference Proceedings",
title = "Ion beam mixing at crystalline and amorphous Fe/Si interfaces",
volume = "876",
pages = "209-+",
url = "https://hdl.handle.net/21.15107/rcub_vinar_6644"
}

Milinović, V., Zhang, K., Bibić, N. M., Leib, K. P., Milosavljević, M.,& Sahoo, P. K.. (2006). Ion beam mixing at crystalline and amorphous Fe/Si interfaces. in AIP Conference Proceedings, 876, 209-+.
https://hdl.handle.net/21.15107/rcub_vinar_6644

Milinović V, Zhang K, Bibić NM, Leib KP, Milosavljević M, Sahoo PK. Ion beam mixing at crystalline and amorphous Fe/Si interfaces. in AIP Conference Proceedings. 2006;876:209-+.
https://hdl.handle.net/21.15107/rcub_vinar_6644 .

Milinović, Velimir, Zhang, Kun, Bibić, Nataša M., Leib, K. P., Milosavljević, Momir, Sahoo, P. K., "Ion beam mixing at crystalline and amorphous Fe/Si interfaces" in AIP Conference Proceedings, 876 (2006):209-+,
https://hdl.handle.net/21.15107/rcub_vinar_6644 .