TY  - JOUR
AU  - Milosavljević, Momir
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Pjević, Dejan J.
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Jeynes, Chris
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7006
AB  - The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers
VL  - 544
SP  - 562
EP  - 566
DO  - 10.1016/j.tsf.2012.12.068
ER  - 

@article{
author = "Milosavljević, Momir and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Pjević, Dejan J. and Kovač, Janez and Dražić, Goran and Jeynes, Chris",
year = "2013",
abstract = "The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers",
volume = "544",
pages = "562-566",
doi = "10.1016/j.tsf.2012.12.068"
}

Milosavljević, M., Obradović, M. O., Grce, A., Peruško, D., Pjević, D. J., Kovač, J., Dražić, G.,& Jeynes, C.. (2013). High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films, 544, 562-566.
https://doi.org/10.1016/j.tsf.2012.12.068

Milosavljević M, Obradović MO, Grce A, Peruško D, Pjević DJ, Kovač J, Dražić G, Jeynes C. High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films. 2013;544:562-566.
doi:10.1016/j.tsf.2012.12.068 .

Milosavljević, Momir, Obradović, Marko O., Grce, Ana, Peruško, Davor, Pjević, Dejan J., Kovač, Janez, Dražić, Goran, Jeynes, Chris, "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers" in Thin Solid Films, 544 (2013):562-566,
https://doi.org/10.1016/j.tsf.2012.12.068 . .