TY  - JOUR
AU  - Jovanović, Zoran M.
AU  - Trstenjak, Urška
AU  - Ho, Hsin-Chia
AU  - Butsyk, Olena
AU  - Chen, Binbin
AU  - Tchernychova, Elena
AU  - Borodavka, Fedir
AU  - Koster, Gertjan
AU  - Hlinka, Jiří
AU  - Spreitzer, Matjaž
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/10623
AB  - The application of two-dimensional (2D) materials
has alleviated a number of challenges of traditional epitaxy and
pushed forward the integration of dissimilar materials. Besides
acting as a seed layer for van der Waals epitaxy, the 2D materials�
being atom(s) thick�have also enabled wetting transparency in
which the potential field of the substrate, although partially
screened, is still capable of imposing epitaxial overgrowth. One of
the crucial steps in this technology is the preservation of the quality
of 2D materials during and after their transfer to a substrate of
interest. In the present study, we show that by honing the
achievements of traditional epitaxy and wet chemistry a hybrid
approach can be devised that offers a unique perspective for the
integration of functional oxides with a silicon platform. It is based
on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus
simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown
on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this
approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.
T2  - ACS Applied Materials and Interfaces
T1  - Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface
VL  - 15
SP  - 6058
EP  - 6068
DO  - 10.1021/acsami.2c17351
ER  - 

@article{
author = "Jovanović, Zoran M. and Trstenjak, Urška and Ho, Hsin-Chia and Butsyk, Olena and Chen, Binbin and Tchernychova, Elena and Borodavka, Fedir and Koster, Gertjan and Hlinka, Jiří and Spreitzer, Matjaž",
year = "2023",
abstract = "The application of two-dimensional (2D) materials
has alleviated a number of challenges of traditional epitaxy and
pushed forward the integration of dissimilar materials. Besides
acting as a seed layer for van der Waals epitaxy, the 2D materials�
being atom(s) thick�have also enabled wetting transparency in
which the potential field of the substrate, although partially
screened, is still capable of imposing epitaxial overgrowth. One of
the crucial steps in this technology is the preservation of the quality
of 2D materials during and after their transfer to a substrate of
interest. In the present study, we show that by honing the
achievements of traditional epitaxy and wet chemistry a hybrid
approach can be devised that offers a unique perspective for the
integration of functional oxides with a silicon platform. It is based
on SrO-assisted deoxidation and controllable coverage of silicon surface with a layer(s) of spin-coated graphene oxide, thus
simultaneously allowing both direct and van der Waals epitaxy of SrTiO3 (STO). We were able to grow a high-quality STO pseudosubstrate suitable for further overgrowth of functional oxides, such as PbZr1−xTixO3 (PZT). Given that the quality of the films grown
on a reduced graphene oxide-buffer layer was almost identical to that obtained on SiC-derived graphene, we believe that this
approach may provide new routes for direct and “remote” epitaxy or layer-transfer techniques of dissimilar material systems.",
journal = "ACS Applied Materials and Interfaces",
title = "Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface",
volume = "15",
pages = "6058-6068",
doi = "10.1021/acsami.2c17351"
}

Jovanović, Z. M., Trstenjak, U., Ho, H., Butsyk, O., Chen, B., Tchernychova, E., Borodavka, F., Koster, G., Hlinka, J.,& Spreitzer, M.. (2023). Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface. in ACS Applied Materials and Interfaces, 15, 6058-6068.
https://doi.org/10.1021/acsami.2c17351

Jovanović ZM, Trstenjak U, Ho H, Butsyk O, Chen B, Tchernychova E, Borodavka F, Koster G, Hlinka J, Spreitzer M. Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface. in ACS Applied Materials and Interfaces. 2023;15:6058-6068.
doi:10.1021/acsami.2c17351 .

Jovanović, Zoran M., Trstenjak, Urška, Ho, Hsin-Chia, Butsyk, Olena, Chen, Binbin, Tchernychova, Elena, Borodavka, Fedir, Koster, Gertjan, Hlinka, Jiří, Spreitzer, Matjaž, "Tiling the Silicon for Added Functionality: PLD Growth of Highly
Crystalline STO and PZT on Graphene Oxide-Buffered Silicon Surface" in ACS Applied Materials and Interfaces, 15 (2023):6058-6068,
https://doi.org/10.1021/acsami.2c17351 . .

TY  - JOUR
AU  - Ho, Hsin-Chia
AU  - Smiljanić, Milutin
AU  - Jovanović, Zoran M.
AU  - Čekada, Miha
AU  - Kovač, Janez
AU  - Koster, Gertjan
AU  - Hlinka, Jiří
AU  - Hodnik, Nejc
AU  - Spreitzer, Matjaž
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11587
AB  - Development of a robust photocathode using lowcost and high-performing materials, e.g., p-Si, to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). Specifically, a very thin (3.9 nm ∼10 unit cells) STO layer epitaxially overgrown on rGO-buffered Si showed the highest onset potential (0.326 V vs RHE) in comparison to the counterparts with thicker and/or nonepitaxial STO. The photovoltage, flat-band potential, and electrochemical impedance spectroscopy measurements revealed that the epitaxial photocathode was more beneficial for charge separation, charge transfer, and targeted redox reaction than the nonepitaxial one. The STO/rGO/Si with a smooth and highly epitaxial STO layer outperforming the directly contacted STO/Si with a textured and polycrystalline STO layer showed the importance of having a well-defined passivation layer. In addition, the numerous pinholes formed in the directly contacted STO/Si led to the rapid degradation of the photocathode during the PEC measurements. The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.
T2  - ACS Applied Materials & Interfaces
T1  - Robust SrTiO3 Passivation of Silicon Photocathode by Reduced Graphene Oxide for Solar Water Splitting
VL  - 15
IS  - 37
SP  - 44482
EP  - 44492
DO  - 10.1021/acsami.3c07747
ER  - 

@article{
author = "Ho, Hsin-Chia and Smiljanić, Milutin and Jovanović, Zoran M. and Čekada, Miha and Kovač, Janez and Koster, Gertjan and Hlinka, Jiří and Hodnik, Nejc and Spreitzer, Matjaž",
year = "2023",
abstract = "Development of a robust photocathode using lowcost and high-performing materials, e.g., p-Si, to produce clean fuel hydrogen has remained challenging since the semiconductor substrate is easily susceptible to (photo)corrosion under photoelectrochemical (PEC) operational conditions. A protective layer over the substrate to simultaneously provide corrosion resistance and maintain efficient charge transfer across the device is therefore needed. To this end, in the present work, we utilized pulsed laser deposition (PLD) to prepare a high-quality SrTiO3 (STO) layer to passivate the p-Si substrate using a buffer layer of reduced graphene oxide (rGO). Specifically, a very thin (3.9 nm ∼10 unit cells) STO layer epitaxially overgrown on rGO-buffered Si showed the highest onset potential (0.326 V vs RHE) in comparison to the counterparts with thicker and/or nonepitaxial STO. The photovoltage, flat-band potential, and electrochemical impedance spectroscopy measurements revealed that the epitaxial photocathode was more beneficial for charge separation, charge transfer, and targeted redox reaction than the nonepitaxial one. The STO/rGO/Si with a smooth and highly epitaxial STO layer outperforming the directly contacted STO/Si with a textured and polycrystalline STO layer showed the importance of having a well-defined passivation layer. In addition, the numerous pinholes formed in the directly contacted STO/Si led to the rapid degradation of the photocathode during the PEC measurements. The stability tests demonstrated the soundness of the epitaxial STO layer in passivating Si against corrosion. This study provided a facile approach for preparing a robust protection layer over a photoelectrode substrate in realizing an efficient and, at the same time, durable PEC device.",
journal = "ACS Applied Materials & Interfaces",
title = "Robust SrTiO3 Passivation of Silicon Photocathode by Reduced Graphene Oxide for Solar Water Splitting",
volume = "15",
number = "37",
pages = "44482-44492",
doi = "10.1021/acsami.3c07747"
}

Ho, H., Smiljanić, M., Jovanović, Z. M., Čekada, M., Kovač, J., Koster, G., Hlinka, J., Hodnik, N.,& Spreitzer, M.. (2023). Robust SrTiO3 Passivation of Silicon Photocathode by Reduced Graphene Oxide for Solar Water Splitting. in ACS Applied Materials & Interfaces, 15(37), 44482-44492.
https://doi.org/10.1021/acsami.3c07747

Ho H, Smiljanić M, Jovanović ZM, Čekada M, Kovač J, Koster G, Hlinka J, Hodnik N, Spreitzer M. Robust SrTiO3 Passivation of Silicon Photocathode by Reduced Graphene Oxide for Solar Water Splitting. in ACS Applied Materials & Interfaces. 2023;15(37):44482-44492.
doi:10.1021/acsami.3c07747 .

Ho, Hsin-Chia, Smiljanić, Milutin, Jovanović, Zoran M., Čekada, Miha, Kovač, Janez, Koster, Gertjan, Hlinka, Jiří, Hodnik, Nejc, Spreitzer, Matjaž, "Robust SrTiO3 Passivation of Silicon Photocathode by Reduced Graphene Oxide for Solar Water Splitting" in ACS Applied Materials & Interfaces, 15, no. 37 (2023):44482-44492,
https://doi.org/10.1021/acsami.3c07747 . .

TY  - CONF
AU  - Spreitzer, Matjaž
AU  - Bučar, Lucija
AU  - Ho, Hsin-Chia
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran
AU  - Koster, Gertjan
PY  - 2023
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/11631
AB  - Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the wellestablished silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using. The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition. Detailed study of initial deposition parameters proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate different functional films were gown for applications in microelectromechanical systems and electrochemical devices.
PB  - Belgrade : Serbian Ceramic Society
C3  - Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade
T1  - Epitaxial oxides on semiconductors: growth perspectives and device applications
SP  - 32
UR  - https://hdl.handle.net/21.15107/rcub_vinar_11631
ER  - 

@conference{
author = "Spreitzer, Matjaž and Bučar, Lucija and Ho, Hsin-Chia and Trstenjak, Urška and Jovanović, Zoran and Koster, Gertjan",
year = "2023",
abstract = "Epitaxial integration of transition metal oxides with semiconductors offers various phenomena for novel device applications, specifically bringing ferroelectric, ferromagnetic, electro-optic, photocatalytic, multiferroic, piezoelectric and other properties to the wellestablished silicon platform. A convenient way of integrating functional oxides with Si(001) substrate is through a SrTiO3 (STO) intermediate layer, which can be fabricated on Si(001) in epitaxial form and with high crystallinity using. The epitaxial growth of functional oxides on silicon substrates requires atomically defined surfaces, which are most effectively prepared using SrO- or Sr-induced deoxidation and passivation. As-prepared surfaces enable overgrowth with various oxides for novel device applications. In our work pulsed laser deposition (PLD) was used to integrate oxides with silicon. We showed the ability to prepare highly-ordered sub-monolayer SrO- and Sr-based surface structures, including two-domain (2×3)+(3×2) pattern at 1/6 ML Sr coverage as determined by the reflection high-energy electron diffraction (RHEED) technique. On the passivated silicon surface epitaxial layers of STO was grown by the method of kinetically controlled sequential deposition. Detailed study of initial deposition parameters proved to be extremely important in achieving epitaxial relation of STO with the underlying substrate. On as-prepared pseudo-substrate different functional films were gown for applications in microelectromechanical systems and electrochemical devices.",
publisher = "Belgrade : Serbian Ceramic Society",
journal = "Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade",
title = "Epitaxial oxides on semiconductors: growth perspectives and device applications",
pages = "32",
url = "https://hdl.handle.net/21.15107/rcub_vinar_11631"
}

Spreitzer, M., Bučar, L., Ho, H., Trstenjak, U., Jovanović, Z.,& Koster, G.. (2023). Epitaxial oxides on semiconductors: growth perspectives and device applications. in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade
Belgrade : Serbian Ceramic Society., 32.
https://hdl.handle.net/21.15107/rcub_vinar_11631

Spreitzer M, Bučar L, Ho H, Trstenjak U, Jovanović Z, Koster G. Epitaxial oxides on semiconductors: growth perspectives and device applications. in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade. 2023;:32.
https://hdl.handle.net/21.15107/rcub_vinar_11631 .

Spreitzer, Matjaž, Bučar, Lucija, Ho, Hsin-Chia, Trstenjak, Urška, Jovanović, Zoran, Koster, Gertjan, "Epitaxial oxides on semiconductors: growth perspectives and device applications" in Advanced Ceramics and Application :11th Serbian Ceramic Society Conference : program and the book of abstracts; September 18-20, 2023; Belgrade (2023):32,
https://hdl.handle.net/21.15107/rcub_vinar_11631 .

TY  - JOUR
AU  - Spreitzer, Matjaž
AU  - Klement, Dejan
AU  - Parkelj Potočnik, Tjaša
AU  - Trstenjak, Urška
AU  - Jovanović, Zoran M.
AU  - Nguyen, Minh Duc
AU  - Yuan, Huiyu
AU  - Ten Elshof, Johan Evert
AU  - Houwman, Evert
AU  - Koster, Gertjan
AU  - Rijnders, Guus
AU  - Fompeyrine, Jean
AU  - Kornblum, Lior
AU  - Fenning, David P.
AU  - Liang, Yunting
AU  - Tong, Wen-Yi
AU  - Ghosez, Philippe
PY  - 2021
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9627
AB  - Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).
T2  - APL Materials
T1  - Epitaxial ferroelectric oxides on silicon with perspectives for future device applications
VL  - 9
IS  - 4
SP  - 040701
DO  - 10.1063/5.0039161
ER  - 

@article{
author = "Spreitzer, Matjaž and Klement, Dejan and Parkelj Potočnik, Tjaša and Trstenjak, Urška and Jovanović, Zoran M. and Nguyen, Minh Duc and Yuan, Huiyu and Ten Elshof, Johan Evert and Houwman, Evert and Koster, Gertjan and Rijnders, Guus and Fompeyrine, Jean and Kornblum, Lior and Fenning, David P. and Liang, Yunting and Tong, Wen-Yi and Ghosez, Philippe",
year = "2021",
abstract = "Functional oxides on silicon have been the subject of in-depth research for more than 20 years. Much of this research has been focused on the quality of the integration of materials due to their intrinsic thermodynamic incompatibility, which has hindered the flourishing of the field of research. Nevertheless, growth of epitaxial transition metal oxides on silicon with a sharp interface has been achieved by elaborated kinetically controlled sequential deposition while the crystalline quality of different functional oxides has been considerably improved. In this Research Update, we focus on three applications in which epitaxial ferroelectric oxides on silicon are at the forefront, and in each of these applications, other aspects of the integration of materials play an important role. These are the fields of piezoelectric microelectromechanical system devices, electro-optical components, and catalysis. The overview is supported by a brief analysis of the synthesis processes that enable epitaxial growth of oxides on silicon. This Research Update concludes with a theoretical description of the interfaces and the possibility of manipulating their electronic structure to achieve the desired coupling between (ferroelectric) oxides and semiconductors, which opens up a remarkable perspective for many advanced applications. © 2021 Author(s).",
journal = "APL Materials",
title = "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications",
volume = "9",
number = "4",
pages = "040701",
doi = "10.1063/5.0039161"
}

Spreitzer, M., Klement, D., Parkelj Potočnik, T., Trstenjak, U., Jovanović, Z. M., Nguyen, M. D., Yuan, H., Ten Elshof, J. E., Houwman, E., Koster, G., Rijnders, G., Fompeyrine, J., Kornblum, L., Fenning, D. P., Liang, Y., Tong, W.,& Ghosez, P.. (2021). Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials, 9(4), 040701.
https://doi.org/10.1063/5.0039161

Spreitzer M, Klement D, Parkelj Potočnik T, Trstenjak U, Jovanović ZM, Nguyen MD, Yuan H, Ten Elshof JE, Houwman E, Koster G, Rijnders G, Fompeyrine J, Kornblum L, Fenning DP, Liang Y, Tong W, Ghosez P. Epitaxial ferroelectric oxides on silicon with perspectives for future device applications. in APL Materials. 2021;9(4):040701.
doi:10.1063/5.0039161 .

Spreitzer, Matjaž, Klement, Dejan, Parkelj Potočnik, Tjaša, Trstenjak, Urška, Jovanović, Zoran M., Nguyen, Minh Duc, Yuan, Huiyu, Ten Elshof, Johan Evert, Houwman, Evert, Koster, Gertjan, Rijnders, Guus, Fompeyrine, Jean, Kornblum, Lior, Fenning, David P., Liang, Yunting, Tong, Wen-Yi, Ghosez, Philippe, "Epitaxial ferroelectric oxides on silicon with perspectives for future device applications" in APL Materials, 9, no. 4 (2021):040701,
https://doi.org/10.1063/5.0039161 . .

TY  - JOUR
AU  - Chen, Binbin
AU  - Gauquelin, Nicolas
AU  - Jannis, Daen
AU  - Cunha, Daniel M.
AU  - Halisdemir, Ufuk
AU  - Piamonteze, Cinthia
AU  - Lee, Jin Hong
AU  - Belhadi, Jamal
AU  - Eltes, Felix
AU  - Abel, Stefan
AU  - Jovanović, Zoran
AU  - Spreitzer, Matjaž
AU  - Fompeyrine, Jean
AU  - Verbeeck, Johan
AU  - Bibes, Manuel
AU  - Huijben, Mark
AU  - Rijnders, Guus
AU  - Koster, Gertjan
PY  - 2020
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/9759
AB  - Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH
T2  - Advanced Materials
T1  - Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon
DO  - 10.1002/adma.202004995
ER  - 

@article{
author = "Chen, Binbin and Gauquelin, Nicolas and Jannis, Daen and Cunha, Daniel M. and Halisdemir, Ufuk and Piamonteze, Cinthia and Lee, Jin Hong and Belhadi, Jamal and Eltes, Felix and Abel, Stefan and Jovanović, Zoran and Spreitzer, Matjaž and Fompeyrine, Jean and Verbeeck, Johan and Bibes, Manuel and Huijben, Mark and Rijnders, Guus and Koster, Gertjan",
year = "2020",
abstract = "Epitaxial growth of SrTiO3 (STO) on silicon greatly accelerates the monolithic integration of multifunctional oxides into the mainstream semiconductor electronics. However, oxide superlattices (SLs), the birthplace of many exciting discoveries, remain largely unexplored on silicon. In this work, LaNiO3/LaFeO3 SLs are synthesized on STO-buffered silicon (Si/STO) and STO single-crystal substrates, and their electronic properties are compared using dc transport and X-ray absorption spectroscopy. Both sets of SLs show a similar thickness-driven metal-to-insulator transition, albeit with resistivity and transition temperature modified by the different amounts of strain. In particular, the large tensile strain promotes a pronounced Ni (Formula presented.) orbital polarization for the SL grown on Si/STO, comparable to that reported for LaNiO3 SL epitaxially strained to DyScO3 substrate. Those results illustrate the ability to integrate oxide SLs on silicon with structure and property approaching their counterparts grown on STO single crystal, and also open up new prospects of strain engineering in functional oxides based on the Si platform. © 2020 The Authors. Advanced Materials published by Wiley-VCH GmbH",
journal = "Advanced Materials",
title = "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon",
doi = "10.1002/adma.202004995"
}

Chen, B., Gauquelin, N., Jannis, D., Cunha, D. M., Halisdemir, U., Piamonteze, C., Lee, J. H., Belhadi, J., Eltes, F., Abel, S., Jovanović, Z., Spreitzer, M., Fompeyrine, J., Verbeeck, J., Bibes, M., Huijben, M., Rijnders, G.,& Koster, G.. (2020). Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials.
https://doi.org/10.1002/adma.202004995

Chen B, Gauquelin N, Jannis D, Cunha DM, Halisdemir U, Piamonteze C, Lee JH, Belhadi J, Eltes F, Abel S, Jovanović Z, Spreitzer M, Fompeyrine J, Verbeeck J, Bibes M, Huijben M, Rijnders G, Koster G. Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon. in Advanced Materials. 2020;.
doi:10.1002/adma.202004995 .

Chen, Binbin, Gauquelin, Nicolas, Jannis, Daen, Cunha, Daniel M., Halisdemir, Ufuk, Piamonteze, Cinthia, Lee, Jin Hong, Belhadi, Jamal, Eltes, Felix, Abel, Stefan, Jovanović, Zoran, Spreitzer, Matjaž, Fompeyrine, Jean, Verbeeck, Johan, Bibes, Manuel, Huijben, Mark, Rijnders, Guus, Koster, Gertjan, "Strain-Engineered Metal-to-Insulator Transition and Orbital Polarization in Nickelate Superlattices Integrated on Silicon" in Advanced Materials (2020),
https://doi.org/10.1002/adma.202004995 . .