TY  - CONF
AU  - Kokkoris, Michael
AU  - Androulakaki, Effrossyni G.
AU  - Czyzycki, Mateusz
AU  - Erich, Marko
AU  - Karydas, Andreas G.
AU  - Leani, Juan J.
AU  - Migliori, Alessandro
AU  - Ntemou, Eleni
AU  - Paneta, Valentina
AU  - Petrović, Srđan M.
PY  - 2019
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/8396
AB  - Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.
C3  - Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
T1  - Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy
VL  - 450
SP  - 144
EP  - 148
DO  - 10.1016/j.nimb.2018.08.048
ER  - 

@conference{
author = "Kokkoris, Michael and Androulakaki, Effrossyni G. and Czyzycki, Mateusz and Erich, Marko and Karydas, Andreas G. and Leani, Juan J. and Migliori, Alessandro and Ntemou, Eleni and Paneta, Valentina and Petrović, Srđan M.",
year = "2019",
abstract = "Synchrotron-radiation based techniques have recently emerged as serious competitors to traditional nuclear analytical ones, not only in the characterization of various materials, but also when the depth profiling of ultra-thin surface layers is concerned. The main goal of the present work was to investigate the applicability of Grazing Incidence X-Ray Fluorescence (GIXRF) and Rutherford/Elastic Backscattering Spectrometry (RBS/EBS) techniques with respect to the accurate quantitative determination of the retained doses of Ar ions deep implanted in random direction of Si [1 1 1] polished crystalline wafers. RBS/EBS measurements with protons and deuterons were taken along with GIXRF ones, the results were compared and an attempt was made to explain the occurring similarities and differences, along with the advantages and weaknesses of each applied analytical technique.",
journal = "Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms",
title = "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy",
volume = "450",
pages = "144-148",
doi = "10.1016/j.nimb.2018.08.048"
}

Kokkoris, M., Androulakaki, E. G., Czyzycki, M., Erich, M., Karydas, A. G., Leani, J. J., Migliori, A., Ntemou, E., Paneta, V.,& Petrović, S. M.. (2019). Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450, 144-148.
https://doi.org/10.1016/j.nimb.2018.08.048

Kokkoris M, Androulakaki EG, Czyzycki M, Erich M, Karydas AG, Leani JJ, Migliori A, Ntemou E, Paneta V, Petrović SM. Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy. in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 2019;450:144-148.
doi:10.1016/j.nimb.2018.08.048 .

Kokkoris, Michael, Androulakaki, Effrossyni G., Czyzycki, Mateusz, Erich, Marko, Karydas, Andreas G., Leani, Juan J., Migliori, Alessandro, Ntemou, Eleni, Paneta, Valentina, Petrović, Srđan M., "Argon ions deeply implanted in silicon studied by Rutherford/Elastic Backscattering and Grazing Incidence X-ray Fluorescence spectroscopy" in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 450 (2019):144-148,
https://doi.org/10.1016/j.nimb.2018.08.048 . .