Grce, Ana

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orcid::0000-0003-4967-0278
  • Grce, Ana (9)
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Author's Bibliography

Compositional and structural studies of ion-beam modified AlN/TiN multilayers

Amati, M.; Gregoratti, L.; Sezen, H.; Grce, Ana; Milosavljević, Momir; Homewood, Kevin P.

(2017)

TY  - JOUR
AU  - Amati, M.
AU  - Gregoratti, L.
AU  - Sezen, H.
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Homewood, Kevin P.
PY  - 2017
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/1578
AB  - This paper reports on compositional and structural modifications induced in coated AlN/TiN multilayers by argon ion irradiation. The initial structure consisting of totally 30 alternate AlN (8 nm thick) and TiN (9.3 nm thick) layers was deposited on Si (100) wafers, by reactive sputtering. Irradiation was done with 180 keV Ar+ to a high dose of 8 x 10(16) ions/cm(2), which introduces up to similar to 10 at.% of argon species, and generates a maximum displacement per atom of 92 for AlN and 127 for TiN, around the projected ion range (109 +/- 34 nm). Characterizations were performed by Rutherford backscattering spectrometry, spatially resolved x-ray photoelectron spectroscopy, and transmission electron microscopy. The obtained results reveal that this highly immiscible and thermally stable system suffered a severe modification upon the applied ion irradiation, although it was performed at room temperature. They illustrate a thorough inter-layer mixing, atomic redistribution, structural change and phase transformation within the affected depth. The original TiN layers appear to grow in thickness, consuming the adjacent AlN layers, while retaining the fcc crystalline structure. In the mostly affected region, the interaction proceeds until all of the original AlN layers are consumed. Compositional studies with photoemission spectroscopy show that due to the ion irradiation treatment the TiN and AlN layers are transformed into Ti0.75Al0.25N and Ti0.65Al0.35N ternary compounds characterized by a better homogenized chemical form compared to non-irradiated layers. The results can be interesting towards further development of radiation tolerant materials based on immiscible ceramic nanocomposites. (C) 2017 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Compositional and structural studies of ion-beam modified AlN/TiN multilayers
VL  - 411
SP  - 431
EP  - 436
DO  - 10.1016/j.apsusc.2017.03.160
ER  - 
@article{
author = "Amati, M. and Gregoratti, L. and Sezen, H. and Grce, Ana and Milosavljević, Momir and Homewood, Kevin P.",
year = "2017",
abstract = "This paper reports on compositional and structural modifications induced in coated AlN/TiN multilayers by argon ion irradiation. The initial structure consisting of totally 30 alternate AlN (8 nm thick) and TiN (9.3 nm thick) layers was deposited on Si (100) wafers, by reactive sputtering. Irradiation was done with 180 keV Ar+ to a high dose of 8 x 10(16) ions/cm(2), which introduces up to similar to 10 at.% of argon species, and generates a maximum displacement per atom of 92 for AlN and 127 for TiN, around the projected ion range (109 +/- 34 nm). Characterizations were performed by Rutherford backscattering spectrometry, spatially resolved x-ray photoelectron spectroscopy, and transmission electron microscopy. The obtained results reveal that this highly immiscible and thermally stable system suffered a severe modification upon the applied ion irradiation, although it was performed at room temperature. They illustrate a thorough inter-layer mixing, atomic redistribution, structural change and phase transformation within the affected depth. The original TiN layers appear to grow in thickness, consuming the adjacent AlN layers, while retaining the fcc crystalline structure. In the mostly affected region, the interaction proceeds until all of the original AlN layers are consumed. Compositional studies with photoemission spectroscopy show that due to the ion irradiation treatment the TiN and AlN layers are transformed into Ti0.75Al0.25N and Ti0.65Al0.35N ternary compounds characterized by a better homogenized chemical form compared to non-irradiated layers. The results can be interesting towards further development of radiation tolerant materials based on immiscible ceramic nanocomposites. (C) 2017 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Compositional and structural studies of ion-beam modified AlN/TiN multilayers",
volume = "411",
pages = "431-436",
doi = "10.1016/j.apsusc.2017.03.160"
}
Amati, M., Gregoratti, L., Sezen, H., Grce, A., Milosavljević, M.,& Homewood, K. P.. (2017). Compositional and structural studies of ion-beam modified AlN/TiN multilayers. in Applied Surface Science, 411, 431-436.
https://doi.org/10.1016/j.apsusc.2017.03.160
Amati M, Gregoratti L, Sezen H, Grce A, Milosavljević M, Homewood KP. Compositional and structural studies of ion-beam modified AlN/TiN multilayers. in Applied Surface Science. 2017;411:431-436.
doi:10.1016/j.apsusc.2017.03.160 .
Amati, M., Gregoratti, L., Sezen, H., Grce, Ana, Milosavljević, Momir, Homewood, Kevin P., "Compositional and structural studies of ion-beam modified AlN/TiN multilayers" in Applied Surface Science, 411 (2017):431-436,
https://doi.org/10.1016/j.apsusc.2017.03.160 . .
9
9

Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix

Kasiuk, Julia; Fedotova, Julia; Przewoznik, Janusz; Kapusta, Czeslaw; Sikora, Marcin; Zukrowski, Jan; Grce, Ana; Milosavljević, Momir

(Elsevier, 2016)

TY  - JOUR
AU  - Kasiuk, Julia
AU  - Fedotova, Julia
AU  - Przewoznik, Janusz
AU  - Kapusta, Czeslaw
AU  - Sikora, Marcin
AU  - Zukrowski, Jan
AU  - Grce, Ana
AU  - Milosavljević, Momir
PY  - 2016
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/962
AB  - Results of the study of oxidised (FeCoZr)(x)(CaF2)(100) (- x) films in a wide composition range (30 LT = x LT = 74 at.%) sintered at oxygen pressures P-O = 43 and 9.8 mPa with X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray absorption spectroscopy (XAS), Fe-57 Mossbauer spectroscopy (MS), and vibrating sample magnetometry (VSM) are reported. A crystalline metallic core-amorphous oxide shell structure of nanoparticles (NPs) in films oxidised at lower P-O = 43 mPa is observed in TEM images. A combined use of XRD, MS and XAS techniques provides identification of NP phase composition evidencing alpha-FeCo(Zr) core of the variable content depending on x and a complex oxide shell including amorphous alpha-Fe23+O3 together with Co1 - y2+Fey2+O at low x (30-36 at%). Full oxidation of NPs at higher P-O = 9.8 mPa is indicated by TEM, XRD, MS and XAS patterns evidencing the formation of crystalline Co1 - y2+Fey2+O core-amorphous alpha-Fe23+O3 shell structure. Progressive oxidation of NPs with decreasing x at P-O = 4.3 mPa as well as with Po increase is followed by variation of average centre shifts LT delta GT obtained from deconvoluted Fe-57 Mossbauer spectra. Magnetometry measurements of films sintered at P-O = 43 mPa reveal an effect of exchange bias confirming ferromagnetic metallic core-antiferromagnetic oxide shell structure of NPs. The results show that phase composition of oxide shells is governed both by concentration of oxygen available during synthesis and on the x. Schemes of progressive NP oxidation with identified phase composition as a function of P-o and x values are proposed. (C) 2016 Elsevier Inc. All rights reserved.
PB  - Elsevier
T2  - Materials Characterization
T1  - Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix
VL  - 113
SP  - 71
EP  - 81
DO  - 10.1016/j.matchar.2016.01.010
ER  - 
@article{
author = "Kasiuk, Julia and Fedotova, Julia and Przewoznik, Janusz and Kapusta, Czeslaw and Sikora, Marcin and Zukrowski, Jan and Grce, Ana and Milosavljević, Momir",
year = "2016",
abstract = "Results of the study of oxidised (FeCoZr)(x)(CaF2)(100) (- x) films in a wide composition range (30 LT = x LT = 74 at.%) sintered at oxygen pressures P-O = 43 and 9.8 mPa with X-ray diffraction (XRD), transmission electron microscopy (TEM), X-ray absorption spectroscopy (XAS), Fe-57 Mossbauer spectroscopy (MS), and vibrating sample magnetometry (VSM) are reported. A crystalline metallic core-amorphous oxide shell structure of nanoparticles (NPs) in films oxidised at lower P-O = 43 mPa is observed in TEM images. A combined use of XRD, MS and XAS techniques provides identification of NP phase composition evidencing alpha-FeCo(Zr) core of the variable content depending on x and a complex oxide shell including amorphous alpha-Fe23+O3 together with Co1 - y2+Fey2+O at low x (30-36 at%). Full oxidation of NPs at higher P-O = 9.8 mPa is indicated by TEM, XRD, MS and XAS patterns evidencing the formation of crystalline Co1 - y2+Fey2+O core-amorphous alpha-Fe23+O3 shell structure. Progressive oxidation of NPs with decreasing x at P-O = 4.3 mPa as well as with Po increase is followed by variation of average centre shifts LT delta GT obtained from deconvoluted Fe-57 Mossbauer spectra. Magnetometry measurements of films sintered at P-O = 43 mPa reveal an effect of exchange bias confirming ferromagnetic metallic core-antiferromagnetic oxide shell structure of NPs. The results show that phase composition of oxide shells is governed both by concentration of oxygen available during synthesis and on the x. Schemes of progressive NP oxidation with identified phase composition as a function of P-o and x values are proposed. (C) 2016 Elsevier Inc. All rights reserved.",
publisher = "Elsevier",
journal = "Materials Characterization",
title = "Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix",
volume = "113",
pages = "71-81",
doi = "10.1016/j.matchar.2016.01.010"
}
Kasiuk, J., Fedotova, J., Przewoznik, J., Kapusta, C., Sikora, M., Zukrowski, J., Grce, A.,& Milosavljević, M.. (2016). Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix. in Materials Characterization
Elsevier., 113, 71-81.
https://doi.org/10.1016/j.matchar.2016.01.010
Kasiuk J, Fedotova J, Przewoznik J, Kapusta C, Sikora M, Zukrowski J, Grce A, Milosavljević M. Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix. in Materials Characterization. 2016;113:71-81.
doi:10.1016/j.matchar.2016.01.010 .
Kasiuk, Julia, Fedotova, Julia, Przewoznik, Janusz, Kapusta, Czeslaw, Sikora, Marcin, Zukrowski, Jan, Grce, Ana, Milosavljević, Momir, "Oxidation controlled phase composition of FeCo(Zr) nanoparticles in CaF2 matrix" in Materials Characterization, 113 (2016):71-81,
https://doi.org/10.1016/j.matchar.2016.01.010 . .
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Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters

Pjević, Dejan J.; Obradović, Marko O.; Marinković, Tijana; Grce, Ana; Milosavljević, Momir; Grieseler, Rolf; Kups, Thomas; Wilke, Marcus; Schaaf, Peter

(2015)

TY  - JOUR
AU  - Pjević, Dejan J.
AU  - Obradović, Marko O.
AU  - Marinković, Tijana
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Grieseler, Rolf
AU  - Kups, Thomas
AU  - Wilke, Marcus
AU  - Schaaf, Peter
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/436
AB  - The influence of sputtering parameters and annealing on the structure and optical properties of TiO2 thin films deposited by RF magnetron sputtering is reported. A pure TiO2 target was used to deposit the films on Si(100) and glass substrates, and Ar/O-2 gas mixture was used for sputtering. It was found that both the structure and the optical properties of the films depend on deposition parameters and annealing. In all cases the as deposited films were oxygen deficient, which could be compensated by post deposition annealing. Changes in the Ar/O-2 mass flow rate affected the films from an amorphous like structure for samples deposited without oxygen to a structure where nano crystalline Futile phase is detected in those deposited with O-2. Annealing of the samples yielded growth of both, ruffle and anatase phases, the ratio depending on the added oxygen content. Increasing mass flow rate of O-2 and annealing are responsible for lowering of the energy band gap values and the increase in refractive index of the films. The results can be interesting towards the development of TiO2 thin films with defined structure and properties. (C) 2015 Elsevier EN. All rights reserved.
T2  - Physica B: Condensed Matter
T1  - Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters
VL  - 463
SP  - 20
EP  - 25
DO  - 10.1016/j.physb.2015.01.037
ER  - 
@article{
author = "Pjević, Dejan J. and Obradović, Marko O. and Marinković, Tijana and Grce, Ana and Milosavljević, Momir and Grieseler, Rolf and Kups, Thomas and Wilke, Marcus and Schaaf, Peter",
year = "2015",
abstract = "The influence of sputtering parameters and annealing on the structure and optical properties of TiO2 thin films deposited by RF magnetron sputtering is reported. A pure TiO2 target was used to deposit the films on Si(100) and glass substrates, and Ar/O-2 gas mixture was used for sputtering. It was found that both the structure and the optical properties of the films depend on deposition parameters and annealing. In all cases the as deposited films were oxygen deficient, which could be compensated by post deposition annealing. Changes in the Ar/O-2 mass flow rate affected the films from an amorphous like structure for samples deposited without oxygen to a structure where nano crystalline Futile phase is detected in those deposited with O-2. Annealing of the samples yielded growth of both, ruffle and anatase phases, the ratio depending on the added oxygen content. Increasing mass flow rate of O-2 and annealing are responsible for lowering of the energy band gap values and the increase in refractive index of the films. The results can be interesting towards the development of TiO2 thin films with defined structure and properties. (C) 2015 Elsevier EN. All rights reserved.",
journal = "Physica B: Condensed Matter",
title = "Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters",
volume = "463",
pages = "20-25",
doi = "10.1016/j.physb.2015.01.037"
}
Pjević, D. J., Obradović, M. O., Marinković, T., Grce, A., Milosavljević, M., Grieseler, R., Kups, T., Wilke, M.,& Schaaf, P.. (2015). Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters. in Physica B: Condensed Matter, 463, 20-25.
https://doi.org/10.1016/j.physb.2015.01.037
Pjević DJ, Obradović MO, Marinković T, Grce A, Milosavljević M, Grieseler R, Kups T, Wilke M, Schaaf P. Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters. in Physica B: Condensed Matter. 2015;463:20-25.
doi:10.1016/j.physb.2015.01.037 .
Pjević, Dejan J., Obradović, Marko O., Marinković, Tijana, Grce, Ana, Milosavljević, Momir, Grieseler, Rolf, Kups, Thomas, Wilke, Marcus, Schaaf, Peter, "Properties of sputtered TiO2 thin films as a function of deposition and annealing parameters" in Physica B: Condensed Matter, 463 (2015):20-25,
https://doi.org/10.1016/j.physb.2015.01.037 . .
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28
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Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system

Obradović, Marko O.; Pjević, Dejan J.; Peruško, Davor; Grce, Ana; Milosavljević, Momir; Homewood, Kevin P.; Siketic, Z.

(2015)

TY  - JOUR
AU  - Obradović, Marko O.
AU  - Pjević, Dejan J.
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Milosavljević, Momir
AU  - Homewood, Kevin P.
AU  - Siketic, Z.
PY  - 2015
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7078
AB  - The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system
VL  - 591
SP  - 164
EP  - 168
DO  - 10.1016/j.tsf.2015.03.074
ER  - 
@article{
author = "Obradović, Marko O. and Pjević, Dejan J. and Peruško, Davor and Grce, Ana and Milosavljević, Momir and Homewood, Kevin P. and Siketic, Z.",
year = "2015",
abstract = "The effects of helium ion irradiation on immiscible AlN/TiN multilayered system were studied. The structure consisted of 30 alternate AlN (similar to 8 nm) and TiN (similar to 9.3 nm) layers of a total thickness around 260 nm, deposited on (100) Si substrates by reactive sputtering. The system was then implanted with 30 keV He+ to very high irradiation doses, 1-4 x 10(17) ions/cm(2). Evaluated projected ion range was 153.1 +/- 45.4 nm and maximum displacements per atom for the applied doses from 6 to 24. It was found that the multilayers remained well separated and stable after irradiation to 1 x 10(17) ions/cm(2), which introduces up to 10 at.% of He within the structure. The main effects were agglomeration of He bubbles around the projected ion range, mostly concentrated at the AlN edges of the interfaces, and a slight increase of the mean grain size within the affected zone. Increasing of the ion dose induced further agglomeration of bubbles, splitting of the layers at the interfaces, and final destruction of the structure. The evaluated He content was consistent with the implanted dose up to 2 x 10(17) ions/cm(2). For the highest dose the implanted gas is partially released from the structure. The results can be interesting towards the development of radiation tolerant materials. (C) 2015 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system",
volume = "591",
pages = "164-168",
doi = "10.1016/j.tsf.2015.03.074"
}
Obradović, M. O., Pjević, D. J., Peruško, D., Grce, A., Milosavljević, M., Homewood, K. P.,& Siketic, Z.. (2015). Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films, 591, 164-168.
https://doi.org/10.1016/j.tsf.2015.03.074
Obradović MO, Pjević DJ, Peruško D, Grce A, Milosavljević M, Homewood KP, Siketic Z. Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system. in Thin Solid Films. 2015;591:164-168.
doi:10.1016/j.tsf.2015.03.074 .
Obradović, Marko O., Pjević, Dejan J., Peruško, Davor, Grce, Ana, Milosavljević, Momir, Homewood, Kevin P., Siketic, Z., "Effects of helium ion irradiation on bubble formation in AlN/TiN multilayered system" in Thin Solid Films, 591 (2015):164-168,
https://doi.org/10.1016/j.tsf.2015.03.074 . .
15
14
16

Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization

Kasiuk, J. V.; Fedotova, J. A.; Przewoznik, J.; Zukrowski, J.; Sikora, M.; Kapusta, Cz; Grce, Ana; Milosavljević, Momir

(2014)

TY  - JOUR
AU  - Kasiuk, J. V.
AU  - Fedotova, J. A.
AU  - Przewoznik, J.
AU  - Zukrowski, J.
AU  - Sikora, M.
AU  - Kapusta, Cz
AU  - Grce, Ana
AU  - Milosavljević, Momir
PY  - 2014
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/77
AB  - The relation between nanoscale structure, local atomic order and magnetic properties of (FeCoZr)(x)(CaF2)(100-x) (29 LT = x LT = 73 at. %) granular films is studied as a function of metal/insulator fraction ratio. The films of a thickness of 1-6 mu m were deposited on Al-foils and glass-ceramic substrates, by ion sputtering of targets of different metal/insulator contents. Structural characterization with X-ray and electron diffraction as well as transmission electron microscopy revealed that the films are composed of isolated nanocrystalline bcc alpha-FeCo(Zr) alloy and insulating fcc CaF2 matrix. They grow in a columnar structure, where elongated metallic nanograins are arranged on top of each other within the columns almost normal to the substrate surface. Mossbauer spectroscopy and magnetometry results indicate that their easy magnetization axes are oriented at an angle of 65 degrees-74 degrees to the surface in films with x between 46 and 74, above the electrical percolation threshold, which is attributed to the growth-induced shape anisotropy. Interatomic distances characteristic for metallic state of alpha-FeCo(Zr) nanograins were revealed by X-ray Absorption Spectroscopy. The results show a lack of surface oxidation of the alloy nanograins, so the growth-induced orientation of nanograins in the films cannot be attributed to this effect. The study is among the first to report a growth-induced non-planar magnetic anisotropy in metal/insulator granular films above the percolation threshold and to reveal the origin of it. (C) 2014 AIP Publishing LLC.
T2  - Journal of Applied Physics
T1  - Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization
VL  - 116
IS  - 4
DO  - 10.1063/1.4891016
ER  - 
@article{
author = "Kasiuk, J. V. and Fedotova, J. A. and Przewoznik, J. and Zukrowski, J. and Sikora, M. and Kapusta, Cz and Grce, Ana and Milosavljević, Momir",
year = "2014",
abstract = "The relation between nanoscale structure, local atomic order and magnetic properties of (FeCoZr)(x)(CaF2)(100-x) (29 LT = x LT = 73 at. %) granular films is studied as a function of metal/insulator fraction ratio. The films of a thickness of 1-6 mu m were deposited on Al-foils and glass-ceramic substrates, by ion sputtering of targets of different metal/insulator contents. Structural characterization with X-ray and electron diffraction as well as transmission electron microscopy revealed that the films are composed of isolated nanocrystalline bcc alpha-FeCo(Zr) alloy and insulating fcc CaF2 matrix. They grow in a columnar structure, where elongated metallic nanograins are arranged on top of each other within the columns almost normal to the substrate surface. Mossbauer spectroscopy and magnetometry results indicate that their easy magnetization axes are oriented at an angle of 65 degrees-74 degrees to the surface in films with x between 46 and 74, above the electrical percolation threshold, which is attributed to the growth-induced shape anisotropy. Interatomic distances characteristic for metallic state of alpha-FeCo(Zr) nanograins were revealed by X-ray Absorption Spectroscopy. The results show a lack of surface oxidation of the alloy nanograins, so the growth-induced orientation of nanograins in the films cannot be attributed to this effect. The study is among the first to report a growth-induced non-planar magnetic anisotropy in metal/insulator granular films above the percolation threshold and to reveal the origin of it. (C) 2014 AIP Publishing LLC.",
journal = "Journal of Applied Physics",
title = "Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization",
volume = "116",
number = "4",
doi = "10.1063/1.4891016"
}
Kasiuk, J. V., Fedotova, J. A., Przewoznik, J., Zukrowski, J., Sikora, M., Kapusta, C., Grce, A.,& Milosavljević, M.. (2014). Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization. in Journal of Applied Physics, 116(4).
https://doi.org/10.1063/1.4891016
Kasiuk JV, Fedotova JA, Przewoznik J, Zukrowski J, Sikora M, Kapusta C, Grce A, Milosavljević M. Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization. in Journal of Applied Physics. 2014;116(4).
doi:10.1063/1.4891016 .
Kasiuk, J. V., Fedotova, J. A., Przewoznik, J., Zukrowski, J., Sikora, M., Kapusta, Cz, Grce, Ana, Milosavljević, Momir, "Growth-induced non-planar magnetic anisotropy in FeCoZr-CaF2 nanogranular films: Structural and magnetic characterization" in Journal of Applied Physics, 116, no. 4 (2014),
https://doi.org/10.1063/1.4891016 . .
14
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15

High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers

Milosavljević, Momir; Obradović, Marko O.; Grce, Ana; Peruško, Davor; Pjević, Dejan J.; Kovač, Janez; Dražić, Goran; Jeynes, Chris

(2013)

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Pjević, Dejan J.
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Jeynes, Chris
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/7006
AB  - The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Thin Solid Films
T1  - High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers
VL  - 544
SP  - 562
EP  - 566
DO  - 10.1016/j.tsf.2012.12.068
ER  - 
@article{
author = "Milosavljević, Momir and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Pjević, Dejan J. and Kovač, Janez and Dražić, Goran and Jeynes, Chris",
year = "2013",
abstract = "The effects of high dose Ar ion irradiation on immiscible AlN/TiN multilayered structures were studied. The structures with 30 alternate layers of a total thickness of similar to 260 nm were deposited by reactive sputtering on (100) Si wafers. Individual layer thickness was similar to 8 nm AlN and similar to 9.3 nm TiN. Irradiation was done with 180 keV Ar+ ions to 1x10(16)-8x10(16) ions/cm(2), with the projected range around mid-depth of the structures. It was found that the highest applied dose induced a considerable intermixing, where the growing TiN grains consume the adjacent AlN layers, transforming partly to (TiAl)N phase. Intermixing occurs due to a high contribution of collision cascades, which was not compensated in demixing by chemical driving forces. However, a multilayered structure with relatively flat surface and interfaces is still preserved, with measured nano-hardness value above the level for the as-deposited sample. The results are compared to other systems and discussed in the light of the existing ion beam mixing models. They can be interesting towards better understanding of the processes involved and to development of radiation tolerant coatings. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Thin Solid Films",
title = "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers",
volume = "544",
pages = "562-566",
doi = "10.1016/j.tsf.2012.12.068"
}
Milosavljević, M., Obradović, M. O., Grce, A., Peruško, D., Pjević, D. J., Kovač, J., Dražić, G.,& Jeynes, C.. (2013). High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films, 544, 562-566.
https://doi.org/10.1016/j.tsf.2012.12.068
Milosavljević M, Obradović MO, Grce A, Peruško D, Pjević DJ, Kovač J, Dražić G, Jeynes C. High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers. in Thin Solid Films. 2013;544:562-566.
doi:10.1016/j.tsf.2012.12.068 .
Milosavljević, Momir, Obradović, Marko O., Grce, Ana, Peruško, Davor, Pjević, Dejan J., Kovač, Janez, Dražić, Goran, Jeynes, Chris, "High dose ion irradiation effects on immiscible AlN/TiN nano-scaled multilayers" in Thin Solid Films, 544 (2013):562-566,
https://doi.org/10.1016/j.tsf.2012.12.068 . .
6
6
7

Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers

Milosavljević, Momir; Toprek, Dragan; Obradović, Marko O.; Grce, Ana; Peruško, Davor; Dražić, Goran; Kovač, Janez; Homewood, Kevin P.

(2013)

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Toprek, Dragan
AU  - Obradović, Marko O.
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Dražić, Goran
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2013
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/5335
AB  - The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.
T2  - Applied Surface Science
T1  - Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers
VL  - 268
SP  - 516
EP  - 523
DO  - 10.1016/j.apsusc.2012.12.158
ER  - 
@article{
author = "Milosavljević, Momir and Toprek, Dragan and Obradović, Marko O. and Grce, Ana and Peruško, Davor and Dražić, Goran and Kovač, Janez and Homewood, Kevin P.",
year = "2013",
abstract = "The effects of Ar ion irradiation on interfacial reactions induced in Ni/Ti multilayers were investigated. Structures consisting of 10 alternate Ni (similar to 26 nm) and Ti (similar to 20 nm) layers of a total thickness similar to 230 nm were deposited by ion sputtering on Si (1 0 0) wafers. Argon irradiations were done at 180 keV, to the doses of 1-6 x 10(16) ions/cm(2), the samples being held at room temperature. The projected implanted ion range is 86 +/- 36 nm, maximum energy loss is closer to the surface, and maximum displacements per atom (dpa) from 47 to 284 for Ni and 26 to 156 for Ti. Characterizations of samples were performed by transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). It is shown that ion irradiation induced a progressed intermixing in the mostly affected zone already for the lowest dose, the thickness of the mix increasing linearly with the irradiation dose. The mixed phase is fully amorphous, starting with a higher concentration of Ni (which is the diffusing species) from the initial stages, and saturating at Ni: Ti similar to 66:34. A thick amorphous layer (similar to 127 nm) formed towards the surface region of the structure for the irradiation dose of 4 x 10(16) ions/cm(2) remains stable with increasing the dose to 6 x 10(16) ions/cm(2), which introduces up to 6-7 at.% of Ar within the mix. The results are discussed in light of the existing models. They can be interesting for introducing a selective and controlled solid-state reaction and towards further studies of ion irradiation stability of amorphous Ni-Ti phase. (C) 2013 Elsevier B.V. All rights reserved.",
journal = "Applied Surface Science",
title = "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers",
volume = "268",
pages = "516-523",
doi = "10.1016/j.apsusc.2012.12.158"
}
Milosavljević, M., Toprek, D., Obradović, M. O., Grce, A., Peruško, D., Dražić, G., Kovač, J.,& Homewood, K. P.. (2013). Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science, 268, 516-523.
https://doi.org/10.1016/j.apsusc.2012.12.158
Milosavljević M, Toprek D, Obradović MO, Grce A, Peruško D, Dražić G, Kovač J, Homewood KP. Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers. in Applied Surface Science. 2013;268:516-523.
doi:10.1016/j.apsusc.2012.12.158 .
Milosavljević, Momir, Toprek, Dragan, Obradović, Marko O., Grce, Ana, Peruško, Davor, Dražić, Goran, Kovač, Janez, Homewood, Kevin P., "Ion irradiation induced solid-state amorphous reaction in Ni/Ti multilayers" in Applied Surface Science, 268 (2013):516-523,
https://doi.org/10.1016/j.apsusc.2012.12.158 . .
11
12
12

A comparison of Ar ion implantation and swift heavy Xe ion irradiation effects on immiscible AlN/TiN multilayered nanostructures

Milosavljević, Momir; Grce, Ana; Peruško, Davor; Stojanovic, Marko; Kovač, Janez; Dražić, Goran; Didyk, Alexander Yu.; Skuratov, Vladimir A.

(2012)

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Grce, Ana
AU  - Peruško, Davor
AU  - Stojanovic, Marko
AU  - Kovač, Janez
AU  - Dražić, Goran
AU  - Didyk, Alexander Yu.
AU  - Skuratov, Vladimir A.
PY  - 2012
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4816
AB  - We have compared the effects of 200 keV Ar-40(1+) ion implantation and 166 MeV Xe-132(27+) ion irradiation on immiscible (AlN/TiN) x 5 multilayers grown on Si(1 0 0) wafers. The layers were deposited by reactive sputtering, individual layer thickness was similar to 22 nm (AlN) and similar to 32 nm (TiN), the stoichiometry Al:N similar to 45:55 and Ti:N similar to 50:50 at%. Argon was implanted to 4 x 10(16) ions cm(-2), and xenon to 5 x 10(14) ions cm(-2). The projected Ar range is around mid depth of the multilayered structure, while swift Xe ions are buried deep into the Si substrate. Upon irradiation the structures remain essentially stable and unmixed; although in both cases we observed detectable effects. The use of wide range of irradiation parameters (S-e/S-n = 1.2-1.4, dpa = 42-63 for Ar; and S-e/S-n = 249-258, dpa = 0.03-0.05 for Xe) enabled to distinguish between the contribution of nuclear and electronic stopping. In case of Ar implantation both atomic collisions and electronic excitations contribute to the induced structural modifications, and in case of Xe only electronic excitations. It was deduced that electronic excitations generate local heating which influences lateral grain growth within individual layers, but no elemental redistribution. On the other hand, atomic collisions facilitate a low level of Ti migration into the under-stoichiometric AlN layers, in the vicinity of the implanted Ar ion range. Energy transfer and temperature distribution were evaluated and compared to the effects produced in the structures. The presented results can be interesting towards developing radiation tolerant materials. (C) 2012 Elsevier B.V. All rights reserved.
T2  - Materials Chemistry and Physics
T1  - A comparison of Ar ion implantation and swift heavy Xe ion irradiation effects on immiscible AlN/TiN multilayered nanostructures
VL  - 133
IS  - 2-3
SP  - 884
EP  - 892
DO  - 10.1016/j.matchemphys.2012.01.112
ER  - 
@article{
author = "Milosavljević, Momir and Grce, Ana and Peruško, Davor and Stojanovic, Marko and Kovač, Janez and Dražić, Goran and Didyk, Alexander Yu. and Skuratov, Vladimir A.",
year = "2012",
abstract = "We have compared the effects of 200 keV Ar-40(1+) ion implantation and 166 MeV Xe-132(27+) ion irradiation on immiscible (AlN/TiN) x 5 multilayers grown on Si(1 0 0) wafers. The layers were deposited by reactive sputtering, individual layer thickness was similar to 22 nm (AlN) and similar to 32 nm (TiN), the stoichiometry Al:N similar to 45:55 and Ti:N similar to 50:50 at%. Argon was implanted to 4 x 10(16) ions cm(-2), and xenon to 5 x 10(14) ions cm(-2). The projected Ar range is around mid depth of the multilayered structure, while swift Xe ions are buried deep into the Si substrate. Upon irradiation the structures remain essentially stable and unmixed; although in both cases we observed detectable effects. The use of wide range of irradiation parameters (S-e/S-n = 1.2-1.4, dpa = 42-63 for Ar; and S-e/S-n = 249-258, dpa = 0.03-0.05 for Xe) enabled to distinguish between the contribution of nuclear and electronic stopping. In case of Ar implantation both atomic collisions and electronic excitations contribute to the induced structural modifications, and in case of Xe only electronic excitations. It was deduced that electronic excitations generate local heating which influences lateral grain growth within individual layers, but no elemental redistribution. On the other hand, atomic collisions facilitate a low level of Ti migration into the under-stoichiometric AlN layers, in the vicinity of the implanted Ar ion range. Energy transfer and temperature distribution were evaluated and compared to the effects produced in the structures. The presented results can be interesting towards developing radiation tolerant materials. (C) 2012 Elsevier B.V. All rights reserved.",
journal = "Materials Chemistry and Physics",
title = "A comparison of Ar ion implantation and swift heavy Xe ion irradiation effects on immiscible AlN/TiN multilayered nanostructures",
volume = "133",
number = "2-3",
pages = "884-892",
doi = "10.1016/j.matchemphys.2012.01.112"
}
Milosavljević, M., Grce, A., Peruško, D., Stojanovic, M., Kovač, J., Dražić, G., Didyk, A. Yu.,& Skuratov, V. A.. (2012). A comparison of Ar ion implantation and swift heavy Xe ion irradiation effects on immiscible AlN/TiN multilayered nanostructures. in Materials Chemistry and Physics, 133(2-3), 884-892.
https://doi.org/10.1016/j.matchemphys.2012.01.112
Milosavljević M, Grce A, Peruško D, Stojanovic M, Kovač J, Dražić G, Didyk AY, Skuratov VA. A comparison of Ar ion implantation and swift heavy Xe ion irradiation effects on immiscible AlN/TiN multilayered nanostructures. in Materials Chemistry and Physics. 2012;133(2-3):884-892.
doi:10.1016/j.matchemphys.2012.01.112 .
Milosavljević, Momir, Grce, Ana, Peruško, Davor, Stojanovic, Marko, Kovač, Janez, Dražić, Goran, Didyk, Alexander Yu., Skuratov, Vladimir A., "A comparison of Ar ion implantation and swift heavy Xe ion irradiation effects on immiscible AlN/TiN multilayered nanostructures" in Materials Chemistry and Physics, 133, no. 2-3 (2012):884-892,
https://doi.org/10.1016/j.matchemphys.2012.01.112 . .
18
18
20

Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation

Milosavljević, Momir; Milinović, Velimir; Peruško, Davor; Grce, Ana; Stojanovic, M.; Pjević, Dejan J.; Mitrić, Miodrag; Kovač, Janez; Homewood, Kevin P.

(2011)

TY  - JOUR
AU  - Milosavljević, Momir
AU  - Milinović, Velimir
AU  - Peruško, Davor
AU  - Grce, Ana
AU  - Stojanovic, M.
AU  - Pjević, Dejan J.
AU  - Mitrić, Miodrag
AU  - Kovač, Janez
AU  - Homewood, Kevin P.
PY  - 2011
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/4487
AB  - The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation
VL  - 269
IS  - 19
SP  - 2090
EP  - 2097
DO  - 10.1016/j.nimb.2011.06.017
ER  - 
@article{
author = "Milosavljević, Momir and Milinović, Velimir and Peruško, Davor and Grce, Ana and Stojanovic, M. and Pjević, Dejan J. and Mitrić, Miodrag and Kovač, Janez and Homewood, Kevin P.",
year = "2011",
abstract = "The effects of argon ion irradiation on structural changes in Ta/Ti multilayers deposited on Si wafers were investigated. The starting structures consisted of sputter deposited 10 alternate Ta (similar to 23 nm) and Ti (similar to 17 nm) layers of a total thickness similar to 200 nm. They were irradiated at room temperature with 200 key Ar(+), to the fluences from 5 x 10(15) to 2 x 10(16) ions/cm(2). The projected ion range was around mid-depth of the multilayered structure, and maximum displacements per atom similar to 130. It was found that, despite of the relatively heavy ion irradiation, individual nanocrystalline Ta and Ti layers remain unmixed, keeping the same level of interface planarity. The changes observed in the mostly affected region are increase in lateral dimensions of crystal grains in individual layers, and incorporation of bubbles and defects that cause some stretching of the crystal lattice. Absence of interlayer mixing is assigned to Ta-Ti immiscibility (reaction enthalpy Delta H(f) = +2 kJ/mol). It is estimated that up to similar to 5 at.% interface mixing induced directly by collision cascades could be compensated by dynamic demixing due to chemical driving forces in the temperature relaxation regime. The results can be interesting towards developing radiation tolerant materials based on multilayered structures. (C) 2011 Elsevier B.V. All rights reserved.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation",
volume = "269",
number = "19",
pages = "2090-2097",
doi = "10.1016/j.nimb.2011.06.017"
}
Milosavljević, M., Milinović, V., Peruško, D., Grce, A., Stojanovic, M., Pjević, D. J., Mitrić, M., Kovač, J.,& Homewood, K. P.. (2011). Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269(19), 2090-2097.
https://doi.org/10.1016/j.nimb.2011.06.017
Milosavljević M, Milinović V, Peruško D, Grce A, Stojanovic M, Pjević DJ, Mitrić M, Kovač J, Homewood KP. Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 2011;269(19):2090-2097.
doi:10.1016/j.nimb.2011.06.017 .
Milosavljević, Momir, Milinović, Velimir, Peruško, Davor, Grce, Ana, Stojanovic, M., Pjević, Dejan J., Mitrić, Miodrag, Kovač, Janez, Homewood, Kevin P., "Stability of nano-scaled Ta/Ti multilayers upon argon ion irradiation" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 269, no. 19 (2011):2090-2097,
https://doi.org/10.1016/j.nimb.2011.06.017 . .
14
14