TY  - JOUR
AU  - Lončar, Boris B.
AU  - Osmokrović, Predrag V.
AU  - Stojanović, M.
AU  - Stanković, Srboljub
PY  - 2001
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2427
AB  - In this study, we examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components under the influence of gamma radiation. This problem has significance in military industry and space technology Total dose results are presented for the JL 27C512D EPROM and 28C64C EEPROM components. There is evidence that EPROM components have better radioactive reliability than EEPROM components. Also, the changes to the EPROM are reversible, and after erasing and reprogramming all EPROM components are functional. On the other hand, changes to the EEPROM are irreversible, and under the influence of gamma radiation, all EEPROM components became permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.
T2  - Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes and Review Papers
T1  - Radioactive reliability of programmable memories
VL  - 40
IS  - 2B
SP  - 1126
EP  - 1129
DO  - 10.1143/JJAP.40.1126
ER  - 

@article{
author = "Lončar, Boris B. and Osmokrović, Predrag V. and Stojanović, M. and Stanković, Srboljub",
year = "2001",
abstract = "In this study, we examine the reliability of erasable programmable read only memory (EPROM) and electrically erasable programmable read only memory (EEPROM) components under the influence of gamma radiation. This problem has significance in military industry and space technology Total dose results are presented for the JL 27C512D EPROM and 28C64C EEPROM components. There is evidence that EPROM components have better radioactive reliability than EEPROM components. Also, the changes to the EPROM are reversible, and after erasing and reprogramming all EPROM components are functional. On the other hand, changes to the EEPROM are irreversible, and under the influence of gamma radiation, all EEPROM components became permanently nonfunctional. The obtained results are analyzed and explained via the interaction of gamma radiation with oxide layers.",
journal = "Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes and Review Papers",
title = "Radioactive reliability of programmable memories",
volume = "40",
number = "2B",
pages = "1126-1129",
doi = "10.1143/JJAP.40.1126"
}

Lončar, B. B., Osmokrović, P. V., Stojanović, M.,& Stanković, S.. (2001). Radioactive reliability of programmable memories. in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes and Review Papers, 40(2B), 1126-1129.
https://doi.org/10.1143/JJAP.40.1126

Lončar BB, Osmokrović PV, Stojanović M, Stanković S. Radioactive reliability of programmable memories. in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes and Review Papers. 2001;40(2B):1126-1129.
doi:10.1143/JJAP.40.1126 .

Lončar, Boris B., Osmokrović, Predrag V., Stojanović, M., Stanković, Srboljub, "Radioactive reliability of programmable memories" in Japanese Journal of Applied Physics Part 1-Regular Papers Short Notes and Review Papers, 40, no. 2B (2001):1126-1129,
https://doi.org/10.1143/JJAP.40.1126 . .

TY  - JOUR
AU  - Vasić, Aleksandra
AU  - Stojanović, M.
AU  - Osmokrović, Predrag V.
AU  - Stojanovic, N
PY  - 2000
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6311
AB  - The most important output characteristics of solar cells, fill factor and efficiency strongly depend on fundamental physical properties of semiconductor materials, such as mobility. lifetime of charge carriers, diffusion length, as well as on the type of transport processes in the device. Ideality factor is considered the most direct indicator of the dependence of output characteristics of solar cells on the electrical transport properties of the cell, that is junction. The results obtained by investigating the influence of ideality factor values on the quality of solar cell as photovoltaic generator are presented in this paper. Since fill factor and efficiency are main indicators of solar cells quality, better understanding of the physical processes leading to their decrease with the increase of the ideality factor is crucial for optimization of the input parameters, and at the same time for obtaining high quality solar cells.
T2  - Materials Science Forum
T1  - The influence of ideality factor on fill factor and efficiency of solar cells
VL  - 352
SP  - 241
EP  - 245
DO  - 10.4028/www.scientific.net/MSF.352.241
ER  - 

@article{
author = "Vasić, Aleksandra and Stojanović, M. and Osmokrović, Predrag V. and Stojanovic, N",
year = "2000",
abstract = "The most important output characteristics of solar cells, fill factor and efficiency strongly depend on fundamental physical properties of semiconductor materials, such as mobility. lifetime of charge carriers, diffusion length, as well as on the type of transport processes in the device. Ideality factor is considered the most direct indicator of the dependence of output characteristics of solar cells on the electrical transport properties of the cell, that is junction. The results obtained by investigating the influence of ideality factor values on the quality of solar cell as photovoltaic generator are presented in this paper. Since fill factor and efficiency are main indicators of solar cells quality, better understanding of the physical processes leading to their decrease with the increase of the ideality factor is crucial for optimization of the input parameters, and at the same time for obtaining high quality solar cells.",
journal = "Materials Science Forum",
title = "The influence of ideality factor on fill factor and efficiency of solar cells",
volume = "352",
pages = "241-245",
doi = "10.4028/www.scientific.net/MSF.352.241"
}

Vasić, A., Stojanović, M., Osmokrović, P. V.,& Stojanovic, N.. (2000). The influence of ideality factor on fill factor and efficiency of solar cells. in Materials Science Forum, 352, 241-245.
https://doi.org/10.4028/www.scientific.net/MSF.352.241

Vasić A, Stojanović M, Osmokrović PV, Stojanovic N. The influence of ideality factor on fill factor and efficiency of solar cells. in Materials Science Forum. 2000;352:241-245.
doi:10.4028/www.scientific.net/MSF.352.241 .

Vasić, Aleksandra, Stojanović, M., Osmokrović, Predrag V., Stojanovic, N, "The influence of ideality factor on fill factor and efficiency of solar cells" in Materials Science Forum, 352 (2000):241-245,
https://doi.org/10.4028/www.scientific.net/MSF.352.241 . .

TY  - JOUR
AU  - Stojanović, M.
AU  - Stanković, Srboljub
AU  - Vukic, D
AU  - Osmokrović, Predrag V.
AU  - Vasić, P
AU  - Vasić, Aleksandra
PY  - 1998
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6248
AB  - Photovoltaic conversion (PV) of solar energy based on the solar cells, is becoming acceptable for various applications. One of the most up-to-date semiconductor technologies, it enables development of the systems for lighting, supplying electrical energy to radio and TV stations, electromotors (kW power) for wide application in industry, agriculture and individual homes, for refrigerators for different purposes etc. The bases of this technology are semiconductor materials. In this paper we analyze the influence of the basic semiconductor materials on further increase of applications of PV systems.
T2  - Materials Science Forum
T1  - PV solar systems and development of semiconductor materials
VL  - 282-2
SP  - 157
EP  - 164
DO  - 10.4028/www.scientific.net/MSF.282-283.157
ER  - 

@article{
author = "Stojanović, M. and Stanković, Srboljub and Vukic, D and Osmokrović, Predrag V. and Vasić, P and Vasić, Aleksandra",
year = "1998",
abstract = "Photovoltaic conversion (PV) of solar energy based on the solar cells, is becoming acceptable for various applications. One of the most up-to-date semiconductor technologies, it enables development of the systems for lighting, supplying electrical energy to radio and TV stations, electromotors (kW power) for wide application in industry, agriculture and individual homes, for refrigerators for different purposes etc. The bases of this technology are semiconductor materials. In this paper we analyze the influence of the basic semiconductor materials on further increase of applications of PV systems.",
journal = "Materials Science Forum",
title = "PV solar systems and development of semiconductor materials",
volume = "282-2",
pages = "157-164",
doi = "10.4028/www.scientific.net/MSF.282-283.157"
}

Stojanović, M., Stanković, S., Vukic, D., Osmokrović, P. V., Vasić, P.,& Vasić, A.. (1998). PV solar systems and development of semiconductor materials. in Materials Science Forum, 282-2, 157-164.
https://doi.org/10.4028/www.scientific.net/MSF.282-283.157

Stojanović M, Stanković S, Vukic D, Osmokrović PV, Vasić P, Vasić A. PV solar systems and development of semiconductor materials. in Materials Science Forum. 1998;282-2:157-164.
doi:10.4028/www.scientific.net/MSF.282-283.157 .

Stojanović, M., Stanković, Srboljub, Vukic, D, Osmokrović, Predrag V., Vasić, P, Vasić, Aleksandra, "PV solar systems and development of semiconductor materials" in Materials Science Forum, 282-2 (1998):157-164,
https://doi.org/10.4028/www.scientific.net/MSF.282-283.157 . .

TY  - JOUR
AU  - Osmokrović, Predrag V.
AU  - Stojanović, M.
AU  - Lončar, Boris B.
AU  - Kartalović, Nenad M.
AU  - Krivokapić, I.
PY  - 1998
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/2150
AB  - Aim of this work is to examine the over-voltage protection under the ionizing radiation influence. The use of modern electronic devices (nuclear, military and space technology) in the conditions of ionizing radiation brings up the question of radioactive resistance of electronic components and over-voltage protection components. The question of reliability of these components under the influence of ionizing radiation is also a relevant one, The entire effects of radiation, which cause the irreversible changes of the material characteristics, are defined as the dosage or integral effects, The resistance of the over-voltage material (the Transient Suppresser Diodes (TSD), Metaloxide Varistors, Gas Filled Surge Arresters (GFSA) and Polycarbon Capacitors) subjected to influence of n perpendicular to gamma radiation caused by californium source was examined in order to determine the radiation effects. It was determined that TSD are highly sensitive to the radiation, The radiation effects on Metaloxide Varistors are similar to the effects on the TSD, GFSA showed the temporary characteristics improvement. It was determined that the Polycarbon Capacitor capacity decreases under the influence of radiation. The obtained results are explained theoretically. (C) 1998 Elsevier Science B.V.
T2  - Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
T1  - Radioactive resistance of elements for over-voltage protection of low-voltage systems
VL  - 140
IS  - 1-2
SP  - 143
EP  - 151
DO  - 10.1016/S0168-583X(97)00921-X
ER  - 

@article{
author = "Osmokrović, Predrag V. and Stojanović, M. and Lončar, Boris B. and Kartalović, Nenad M. and Krivokapić, I.",
year = "1998",
abstract = "Aim of this work is to examine the over-voltage protection under the ionizing radiation influence. The use of modern electronic devices (nuclear, military and space technology) in the conditions of ionizing radiation brings up the question of radioactive resistance of electronic components and over-voltage protection components. The question of reliability of these components under the influence of ionizing radiation is also a relevant one, The entire effects of radiation, which cause the irreversible changes of the material characteristics, are defined as the dosage or integral effects, The resistance of the over-voltage material (the Transient Suppresser Diodes (TSD), Metaloxide Varistors, Gas Filled Surge Arresters (GFSA) and Polycarbon Capacitors) subjected to influence of n perpendicular to gamma radiation caused by californium source was examined in order to determine the radiation effects. It was determined that TSD are highly sensitive to the radiation, The radiation effects on Metaloxide Varistors are similar to the effects on the TSD, GFSA showed the temporary characteristics improvement. It was determined that the Polycarbon Capacitor capacity decreases under the influence of radiation. The obtained results are explained theoretically. (C) 1998 Elsevier Science B.V.",
journal = "Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",
title = "Radioactive resistance of elements for over-voltage protection of low-voltage systems",
volume = "140",
number = "1-2",
pages = "143-151",
doi = "10.1016/S0168-583X(97)00921-X"
}

Osmokrović, P. V., Stojanović, M., Lončar, B. B., Kartalović, N. M.,& Krivokapić, I.. (1998). Radioactive resistance of elements for over-voltage protection of low-voltage systems. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 140(1-2), 143-151.
https://doi.org/10.1016/S0168-583X(97)00921-X

Osmokrović PV, Stojanović M, Lončar BB, Kartalović NM, Krivokapić I. Radioactive resistance of elements for over-voltage protection of low-voltage systems. in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms. 1998;140(1-2):143-151.
doi:10.1016/S0168-583X(97)00921-X .

Osmokrović, Predrag V., Stojanović, M., Lončar, Boris B., Kartalović, Nenad M., Krivokapić, I., "Radioactive resistance of elements for over-voltage protection of low-voltage systems" in Nuclear Instruments and Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms, 140, no. 1-2 (1998):143-151,
https://doi.org/10.1016/S0168-583X(97)00921-X . .

TY  - JOUR
AU  - Stojanović, M.
AU  - Milosavljević, Momir
AU  - Jeynes, C
PY  - 1998
UR  - https://vinar.vin.bg.ac.rs/handle/123456789/6247
AB  - Silicides belong to a very promising group of materials which are of great interest both in the physics of thin films and in microelectronics. Their low resistivity and expected good temperature stability make them desirable for fabrication of reliable and reproducible electrical contacts. Investigations of this type of contacts include both their experimental development and the development of methods for their characterization such as noise level measurement and RES analysis. The noise level measurements enable the control of the noise, which is important characteristic of metal-semiconductor (M/S) electrical contacts (especially 1/f noise). In our work we compare the RES spectra and low frequency noise spectra of As+ implanted layers of TiN-Ti-Si structures, obtained in different conditions. Low frequency noise spectra are also obtained at different sample temperatures. Results of our measurements and analysis are of interest for solving the problems related to the application of ion implantation of As+ ions for the formation of silicides on p-Si, that are discussed by many authors in their investigations recently.
T2  - Materials Science Forum
T1  - Characterization of as implanted silicides by frequency noise level measurements
VL  - 282-2
SP  - 153
EP  - 156
DO  - 10.4028/www.scientific.net/MSF.282-283.153
ER  - 

@article{
author = "Stojanović, M. and Milosavljević, Momir and Jeynes, C",
year = "1998",
abstract = "Silicides belong to a very promising group of materials which are of great interest both in the physics of thin films and in microelectronics. Their low resistivity and expected good temperature stability make them desirable for fabrication of reliable and reproducible electrical contacts. Investigations of this type of contacts include both their experimental development and the development of methods for their characterization such as noise level measurement and RES analysis. The noise level measurements enable the control of the noise, which is important characteristic of metal-semiconductor (M/S) electrical contacts (especially 1/f noise). In our work we compare the RES spectra and low frequency noise spectra of As+ implanted layers of TiN-Ti-Si structures, obtained in different conditions. Low frequency noise spectra are also obtained at different sample temperatures. Results of our measurements and analysis are of interest for solving the problems related to the application of ion implantation of As+ ions for the formation of silicides on p-Si, that are discussed by many authors in their investigations recently.",
journal = "Materials Science Forum",
title = "Characterization of as implanted silicides by frequency noise level measurements",
volume = "282-2",
pages = "153-156",
doi = "10.4028/www.scientific.net/MSF.282-283.153"
}

Stojanović, M., Milosavljević, M.,& Jeynes, C.. (1998). Characterization of as implanted silicides by frequency noise level measurements. in Materials Science Forum, 282-2, 153-156.
https://doi.org/10.4028/www.scientific.net/MSF.282-283.153

Stojanović M, Milosavljević M, Jeynes C. Characterization of as implanted silicides by frequency noise level measurements. in Materials Science Forum. 1998;282-2:153-156.
doi:10.4028/www.scientific.net/MSF.282-283.153 .

Stojanović, M., Milosavljević, Momir, Jeynes, C, "Characterization of as implanted silicides by frequency noise level measurements" in Materials Science Forum, 282-2 (1998):153-156,
https://doi.org/10.4028/www.scientific.net/MSF.282-283.153 . .